• Applied Chemistry for Engineering
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• v.21 no.5
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• pp.537-541
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• 2010

Pt-Sn with various ratios was supported on carbon black after pretreatment in an acidic solution by a reduction method. The Pt/Sn ratio was controlled by varying the concentration of each component in the solution, and the influence of the composition on the electrocatalytic activities was investigated. The crystallinity of the synthesized materials was investigated by XRD (X-ray Diffraction), and the oxidation states of both the platinum and tin were determined by XPS (X-ray Photoelectron Spectroscopy). SEM (Scanning Electron Microscopy)-EDS (Energy Dispersive Spectroscopy) was utilized to examine the morphology and composition of the synthesized electrode, and the particle size of the Pt-Sn was analyzed by TEM (Transmission Electron Microscopy). The electrocatalytic activity for oxygen reduction was evaluated in a 0.5 M $H_2SO_4$ solution using a rotating disk electrode system. The activity and stability were found to be strongly dependent on the electrode composition (Pt/Sn ratio). The catalytic activity and stability for methanol oxidation were also measured using cyclic voltammetry (CV) in a mixture of 0.5 M $H_2SO_4$ and 0.5 M $CH_3OH$ aqueous solution. The addition of proper amount of Sn was found to significantly improve both catalytic activity and stability for methanol oxidation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.4
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• pp.154-158
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• 2021

The optical transmittance of Mn-doped SnO₂ monolayer film increased gradually from 80.9 to 85.4 % at 550 nm wavelengths upon increasing the O₂/Ar+O₂ concentration rate from 0 to 7.9 % and the band gap energy changed from 3.0 to 3.6 eV. The resistivity tended to decrease from 3.21 Ω·cm to 0.03 Ω·cm, reaching a minimum at 2.7 %, and then gradually increased from 0.03 to 52.0 Ω·cm at higher O₂/Ar+O₂ gas concentration ratio. Based on XPS spectra analysis, the Sn 3d_5/2 peak of Mn-doped SnO₂ single layer shifted slightly from 486.40 to 486.58 and O_1s peak also shifted from 530.20 to 530.33 eV with increase the O₂/Ar+O₂ concentration ratio. Therefore, the XPS spectra results indicate that a multiphase with SnO and SnO₂ coexisted in the sputtered Mn-doped SnO₂ monolayer film.

• Journal of the Korean Ceramic Society
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• v.23 no.1
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• pp.7-12
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• 1986

Dielectric properties of $Ba_{0.9}Ca_{0.1}(Ti_{1-x}Sn_x)O_3$ were investigated from x=0 to 0.20, and temperature range -4$0^{\circ}C$~13$0^{\circ}C$ Density and grain size decreased with increasing Sn content due to grain growth inhibitor. Dielectric constant below the Curie temperature increased with increasing Sn content and dissipation factor dec reased. These results are due to grain size effect and internal stress. Curie temperature was shifted to lower temperature with increasing ratio of total polarizability to volume resulting from substitution of $Ba^{2+}$ ion with $Ca^{2+}$ ion $Ti^{4+}$ ion with $Sn^{4+}$ ion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.589-593
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• 2011

[ $SnO_2$ ]nano powders were prepared by solution reduction method using tin chloride($SnCl_2{\cdot}2H_2O$), hydrazine($N_2H_4$) and NaOH. The $SnO_2$ thick films for gas sensors were fabricated by screen printing method on alumina substrates and annealed at $300^{\circ}C$ in air, respectively. XRD patterns of the $SnO_2$ nano powders showed the tetragonal structure with (110) dominant orientation. The particle size of $SnO_2$ nano powders at the ratio of $SnCl_2:N_2H_4$+NaOH= 1:6 was about 60 nm. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a test box. Sensitivity of $SnO_2$ gas sensor to 5 ppm $CH_4$gas and 5 ppm $CH_3CH_2CH_3$ gas was investigated for various $SnCl_2:N_2H_4$+NaOH proportion. The highest sensitivity to $CH_4$ gas and $CH_3CH_2CH_3$ gas of $SnO_2$ sensors was observed at the $SnCl_2:N_2H_4$+NaOH= 1:8 and $SnCl_2:N_2H_4$+NaOH= 1:6, respectively. Response and recovery times of $SnO_2$ gas sensors prepared by $SnCl_2:N_2H_4$+NaOH= 1:6 was about 40 s and 30 s, respectively.

• Journal of the Korean Ceramic Society
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• v.46 no.3
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• pp.271-274
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• 2009

Redox investigation of Sn and S ion was attempted in alkaline earth borosilicate glass melts with only 1 mol% $Na_2O$ by means of Square Wave Voltammetry (SWV). According to voltammograms, there was only one peak due to $Sn^{4+}/Sn^{2+}$ in melt doped with $SnO_2$. The calculated standard enthalpy and entropy of the reduction of $Sn^{4+}$ to $Sn^{2+}$ were 116kJ/mole and 62 J/mol K, respectively. The determined redox ratio, [$Sn^{2+}$] / [$Sn^{4+}$] in the temperature range of $1300{\sim}1600^{\circ}C$ was in $0.4{\sim}2.1$. On the contrary, in the voltammogram of melt doped with $BaSO_4$ there was no peak due to $S^{4+}/S^o$ but shoulder that might be attributed to the adsorption of sulfur at the electrode. The absence of the peak related with $S^{4+}/S^o$ was discussed from the view-point of the thermal decomposition behavior of $BaSO_4$ in the glass batch.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.304-308
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• 2012

Transparent thin film transistors (TTFT) were fabricated using the rf magnetron sputtered ZnO-$SnO_2$ films as active layers. A ceramic target whose Zn atomic ratio to Sn is 2:1 was employed for the deposition of ZnO-$SnO_2$ films. To study the post-annealing effects on the properties of TTFT, ZnO-$SnO_2$ films were annealed at $200^{\circ}C$ or $400^{\circ}C$ for 5 min before In deposition for source and drain electrodes. Oxygen was added into chamber during sputtering to raise the resistivity of ZnO-$SnO_2$ films. The effects of oxygen addition on the properties of TTFT were also investigated. 100 nm $Si_3N_4$ film grown on 100 nm $SiO_2$ film was used as gate dielectrics. The mobility, $I_{on}/I_{off}$, interface state density etc. were obtained from the transfer characteristics of ZnO-$SnO_2$ TTFTs.

• Journal of Korean Society for Quality Management
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• v.27 no.3
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• pp.67-78
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• 1999

In parameter design introduced by Taguchi, we analyze a performance measure, so called SN ratio. The SN ratio is a function of the expected loss due to the variation of quality characteristic. In this paper, an easy way for developing performance measures is presented, which can be used to control several quality characteristics simultaneously in parameter design. To develop such multivariate performance measures, the transformation method of the expected loss and combining techniques are employed. And the analysis of real empirical data for an application of the proposed method is also presented.

• Current Photovoltaic Research
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• v.3 no.2
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• pp.54-60
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• 2015

ZnSnO thin films were deposited by atomic layer deposition (ALD) process using diethyl zinc ($Zn(C_2H_5)_2$) and tetrakis (dimethylamino) tin ($Sn(C_2H_6N)_4$) as metal precursors and water vapor as a reactant. ALD process has several advantages over other deposition methods such as precise thickness control, good conformality, and good uniformity for large area. The composition of ZnSnO thin films was controlled by varying the ratio of ZnO and $SnO_2$ ALD cycles. The ALD ZnSnO film was an amorphous state. The band gap of ZnSnO thin films increased as the Sn content increased. The CIGS solar cell using ZnSnO buffer layer showed about 18% energy conversion efficiency. With such a high efficiency with the ALD ZnSnO buffer and no light soaking effect, AlD ZnSnO buffer mighty be a good candidate to replace Zn(S,O) buffer in CIGSsolar cells.

• Journal of Integrative Natural Science
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• v.13 no.3
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• pp.92-96
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• 2020

Taguchi's robust parameter design is an approach to reduce the performance variation of quality characteristics in products and processes. In robust design, the signal-to-noise ratio (SN ratio) was used to find the optimum condition to minimize the variation of quality characteristics as much as possible and bring the average of quality characteristics closer to the target value. In this paper, we propose a simultaneous optimization method based on a linear model of the SN ratio as a method to find the optimal condition of the control factor in case of multi-characteristics. In addition, the proposed method and the existing method were compared and studied by taking actual cases.

• Journal of Korea Foundry Society
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• v.12 no.4
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• pp.317-325
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• 1992

Diamond is the hardest material known to humans, also possesses the highest thermal conductivity and a very low thermal expansion coefficient. Therefore, these properties of diamond make them logical choices for many difficult grinding application. Bonding material is a very important factor to performance of a grinding wheel. Grinding glass constitutes one of the major application areas of diamond grinding wheels, and Cu-Sn tin bronze matrix is widely used as a metal bond of diamond wheel in grinding glass but these studies are rarely reported. The bronze test pieces excluding diamond are sintered by the method of hot sizing respectively at $600^{\circ}C$, $650^{\circ}C$, $700^{\circ}C$, with a composition(Cu-10wt%Sn) on ${\alpha}$ phase and two compositions(Cu-20wt%Sn and Cu-23wt%Sn) on ${\alpha}+{\beta}$ phase. The rupture strength of Cu-10wt%Sn is highest. The bronze bonded diamond wheels are manufactured by same conditions as the bronze test pieces. The results of grinding ratio of wheels are highest in case of Cu-10wt%Sn bonded wheel sintered at $650^{\circ}C$ and grinding power is highest in same composition sintered at $700^{\circ}C$.