• Title/Summary/Keyword: SLS (Solid-Liquid-Solid)

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Growth of SiC Nanotube by SLS (Solid-Liquid-Solid) Growth Mechanism (SLS(Solid-Liquid-Solid) 성장기구에 의한 탄화규소 나노튜브의 성장)

  • Rho Dae-Ho;Kim Jae-Soo;Byun Dong-Jin;Yang Jae-Woong;Kim Na-Ri
    • Korean Journal of Materials Research
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    • v.14 no.2
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    • pp.83-89
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    • 2004
  • SiC nanotubes were synthesized by SLS growth mechanism using various metal catalysts. Synthesized nanotubes had mean diameters of 20~50 nm and several $\mu\textrm{m}$ length. The kind of catalysts affected microstructures of SiC nanotubes by different diffusion routes. These differences are attributed to catalysts' physical properties and relative activities to the graphite substrate. Fe acted as a good catalyst of SLS growth mechanism. But in case of Ni, SiC nanotubes grew slowly. Optical property was measured by photoluminescence measurement. Relatively broad peak was obtained and mean peak positioned at about 430 nm. This result was the same as other nanocrystalline SiC materials, but was different from the results of bulk SiC probably due to quantum confinement effect and defect in the grown SiC nanotube.

Growth of SiC nanowires by SLS growth mechanism (SLS 성장방법에 의한 SiC 나노와이어의 성장)

  • 노대호;김재수;변동진;진정근;김나리;양재웅
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.116-116
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    • 2003
  • Most of all nano-structures, SiC had a high electrical conductivity and mechanical strengths ay high temperatures. So It was considered a useful materials for nanosized device materials and added materials for strength hardening. Much methods were developed for SiC nanowire and nanorods like CVD, carbothermal reduction, Laser ablation and CNT-confined reduction. These methods used the VLS (Vapor-Liquid-Solid) growth mechanism. In these experiments, SiC nanowire was grown by SLS (Sold-Liquid-Solid) growth mechanism used Graphite substrate, And we characterized its microstructure to compare with VLS growth mechanism.

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Effect of Tributylphosphine for the Solution-Liquid-Solid Synthesis of CdSe Nanowires

  • Jang, Hee Su;Lee, Jin Seok
    • Bulletin of the Korean Chemical Society
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    • v.34 no.2
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    • pp.590-594
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    • 2013
  • Semiconductor CdSe nanowires (NWs) can serve as model systems for investigating the physical properties of one-dimensional (1D) nanostructures and have great potential for applications in electronics and photonic nanodevices. With numerous attractions arisen from their physical properties, CdSe NWs have been synthesized by vapor-liquid-solid (VLS) methods, but they have some limitations of high reaction temperature and low production. Here, we synthesized CdSe NWs via the solution-liquid-solid (SLS) mechanisms using bismuth (Bi) covered substrates as a low-melting point catalyst and compared the products after injecting identical amount of Se and different amount of tributylphosphine (TBP). CdSe NWs have similar diameters but longer lengths with decreasing TBP, so we proposed the role of TBP as a solvent and capping agent of Se.

Synthesis of Au Nanowires Using S-L-S Mechanism (S-L-S 성장기구를 이용한 양질의 골드 나노선 합성)

  • No, Im-Jun;Kim, Sung-Hyun;Shin, Paik-Kyun;Cho, Jin-Woo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.11
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    • pp.922-925
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    • 2012
  • Single crystalline Au nanowires were successfully synthesized in a tube-type furnace. The Au nanowires were grown by vapor phase synthesis technique using solid-liquid-solid (SLS) mechanism on substrates of corning glass and Si wafer. Prior to Au nanowire synthesis, Au thin film served as both catalyst and source for Au nanowire was prepared by sputtering process. Average length of the grown Au nanowires was approximately 1 ${\mu}m$ on both the corning glass and Si wafer substrates, while the diameter and the density of which were dependent on the thickness of the Au thin film. To induce a super-saturated states for the Au particle catalyst and Au molecules during the Au nanowire synthesis, thickness of the Au catalyst thin film was fixed to 10 nm or 20 nm. Additionally, synthesis of the Au nanowires was carried out without introducing carrier gas in the tube furnace, and synthesis temperature was varied to investigate the temperature effect on the resulting Au nanowire characteristics.

Fabrication of Composite Filler Metal by Melt Infiltration (용탕 침투법을 이용한 복합 삽입 금속의 제조)

  • Park, Heung-Il;Kim, Ji-Tae;Kim, Woo-Yeol
    • Journal of Korea Foundry Society
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    • v.23 no.5
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    • pp.244-250
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    • 2003
  • The aim of this study is fabricating of composite filler metal (CFM) by a combination of selective laser sintering (SLS) of stainless steel powders (RapidSteel $2.0^{TM}$ and liquid phase infiltration of Ag-28 wt.%Cu alloy. Porous stainless steel body with inter-connected pore channels was fabricated by SLS, binder decomposing and densification processes. By the direct contact infiltration, the narrow inter-particle channels of the porous body were completely filled with the Ag-28 wt.%Cu alloy infiltrant. During infiltration, the dissolved elements of Fe, Ni and Cr from the porous body were solved into copper solid solution phases, which consist of eutectic structure of composite metal matrix. The S10C/CFM/S10C joints, which have narrow clearance gaps between them up to 10 micrometers, were joined successfully by self-feeding of filler metal from the matrix of CFM. The CFM kept its original thickness and microstructure after brazing. The tensile strength of brazed specimen was higher than 30 kgf/$mm^2$ and showed a typical ductile fracture mode in the CFM.

Synthesis of $CuInGaSe_2$ Nanoparticles for Absorber Layer of Solar Cell (태양전지 광흡수층용 $CuInGaSe_2$ 나노입자 합성)

  • 김기현;전영갑;윤경훈;박병옥
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.231-231
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    • 2003
  • I-III-Ⅵ족 CuInGaSe$_2$(CIGS)계 화합물 태양전지는 1 eV 이상의 직접 천이형 에너지 밴드갭을 가지며, 전기 광학적으로 매우 안정하여 태양전지의 광흡수층으로 매우 이상적이다. CIGS 광흡수층제조를 위하여 용매열법 (solvothermal method)으로 CIGS나노입자를 합성하였다. 용매열법은 진공장비를 사용하던 기존의 방법에 비해 저온, 저압에서 저가로 합성할 수 있다는 장점을 가지고 있다. Copper, indium selenium 및 gallium 분말과 유기용매 ethylenediarnine을 autoclave안에서 반응시켜 CIGS 나노입자를 제조하였다. 280 에서 14시간동안 반응시켜 직경이 30-80 nm인 구형에 가까운 CIGS 나노입자를 얻었다. 이것은 용매열법에 의한 4성분계의 CIGS 나노입자의 최초 합성이다. diehyleneamine을 용매로 사용한 경우에 한하여 구형의 CIS 입자를 합성할 수 있다고 보고되었으나, Cu와 이중 N-chelation이 형성되는 ethylenediamine 용매임에도 불구하고 구형의 CIGS 나노분말이 형성된 것은 solution-liquid-solid (SLS) 기구로 설명할 수 있었다. HRSEM, TEM, XRD. EDS으로 나노분말의 형상 크기 및 조성을 조사하여 chalcopyrite 구조의 CuInGaSe$_2$ 임을 확인하였다.

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Synthesis of CuInSe2 Nanoparticles by Solvothermal Method (용매열법을 이용한 CuInSe2 나노 입자 합성)

  • Kim Ki-Hyun;Chun Young-Gab;Park Byung-Ok;Yoon Kyung-Hoon
    • Korean Journal of Materials Research
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    • v.14 no.10
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    • pp.737-742
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    • 2004
  • $CuInSe_2$ (CIS) nanoparticles of chalcopyrite structure were directly synthesized by a solvothemal method in an autoclave with diethylamine as a solvent. A morphology change of the nanoparticles was observed as a function of reaction temperatures and times. Dense rod-type CIS nanoparticles with width of $5\sim10mm$ and length in the range of 30-80 nm were obtained at $180^{\circ}C$ for 36 hrs whereas spherical particles with diameter in the range of 5-10 nm were observed at $250^{\circ}C$ for 36 hrs. The formation of the rod-like nanoparticles in diethylamine, without double N-chelation, was explained by the Solution-Liquid-Solid (SLS) mechanism.