• Title/Summary/Keyword: SIW Structure

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High-Q Resonator with Substrate Integrated Waveguide(SIW) Structure (높은 Q 값을 갖는 기판 집적형 도파관(SIW) 공진기)

  • Yun Tae-Soon;Nam Hee;Lee Jong-Chul
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.4 s.107
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    • pp.324-329
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    • 2006
  • In this paper, a resonator with the substrate integrated waveguide(SIW) structure at the satellite communication band is presented. The SIW structure is realized by via-holes on the dielectric substrate and has an advantage of integration with other circuits. For the measurement, a designed back-to-back transition has the insertion loss of 0.4 dB at 18 GHz. Also, the quality factor of the resonator with the SIW structure including back-to-back transition is obtained to be 222. The high-Q resonator with the SIW structure can be used in filter, oscillator, and voltage controlled oscillator.

X-Band Oscillator Using SIW Cavity Resonator Based on Planar Circuit Technique (평면회로 기법에 의한 SIW Cavity 공진기를 이용한 X-밴드 발진기)

  • Lee, Hyun-Wook;Lee, Il-Woo;Nam, Hee;Lee, Jong-Chul
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.7 no.1
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    • pp.68-74
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    • 2008
  • The substrate integrated waveguide (SIW) structure can be approximated as the rectangular waveguide using common dielectric substrate with via-holes. To realize reflection-type resonator, $50-{\omega}$ microstrip line can be used for coupling with the center plane of the cavity. The oscillator is designed to operate at 9.45 GHz using the reflection-type SIW cavity resonator. The phase noise of oscillator shows -98.1dBc/Hz at 100 KHz offset. In experiment, the reflection type SIW cavity resonator improves the loaded quality factor making the low phase noise oscillator possible. Due to the entirely planar structure of this resonator, this technique can also be adequate in oscillator applications for a low cost and low phase noise performance.

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Fabrication of Substrate Integrated Waveguide (SIW)-based Shielded Stripline using Silicon Anisotropic Wet-Etch and BCB-based Polymer Bonding (실리콘 이방성 습식 식각과 BCB 폴리머 접합을 이용한 기판 집적형 도파관(SIW) 기반의 차폐된 스트립선로의 제작)

  • Bang, Yong-Seung;Kim, Nam-Gon;Kim, Jung-Mu;Cheon, Chan-Gyul;Kwon, Young-Woo;Kim, Yong-Kweon
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1513_1514
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    • 2009
  • This paper reports on a fabrication of novel substrate integrated waveguide (SIW)-based shielded stripline applicable to the broadband transverse electromagnetic (TEM) single-mode propagation. We suggested a structure for half-SIW and half-shielded stripline, which combined through the benzocyclobutene (BCB) bonding layer. The electrical interconnection between the sidewall of anisotropic wet-etched silicon and patterned BCB layers is measured subsequent to the metalization on the side wall. The proposed SIW-based shielded stripline has great potential in terms of simple fabrication, integration with planar circuits and monolithic system fabricated on a SIW structure.

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Design of Frequency-Tunable Microstrip Filter Using Triple-Mode Substrate Integrated Waveguide (SIW) Structure (3중모드 기판집적 도파관(SIW) 구조를 이용한 주파수 가변 마이크로스트립 필터 설계)

  • Kyeong-Min Na;Dong-Woo Kim;Soon-soo Oh
    • Journal of IKEEE
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    • v.28 no.1
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    • pp.72-77
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    • 2024
  • In this paper, a triple-mode frequency-tunable filter is proposed to meet the recent demands of various frequency bands of mobile communication services. This filter has a tunable structure that can adjust the resonance frequency using a variable capacitor. To improve the quality factor, a SIW(Substrate Integrated Waveguide) structure was introduced and a structure that induces three resonance modes was implemented through a circular hole located in the center. The change in electric field distribution and resonance frequency by the variable capacitor was simulated using HFSS, and the change in electric field distribution and resonance frequency of Triple Mode mode was confirmed.

A Wideband Ridge SIW-to-SIW Transition for Microwave Applications (초고주파 응용을 위한 광대역 Ridge SIW와 SIW 전이 구조)

  • Jeon, Jiwon;Byun, Jindo;Lee, Hai-Young
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.3
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    • pp.270-277
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    • 2013
  • In this paper, we propose a wideband ridge SIW(Ridge Substrate Integrated Waveguide)-to-SIW(Substrate Integrated Waveguide) transition. The proposed transition structure is designed to acquire a wide bandwidth by inserting through via holes at the regular interval for an impedance matching and an E-field mode matching method. The measurement results show a fractional bandwidth is 29.1 % at 20 dB return loss from the center frequency(11 GHz). The maximum insertion loss is 0.49 dB from 9.21 GHz to 12.41 GHz.

Design and Analysis of 45°-Inclined Linearly Polarized Substrate Integrated Waveguide(SIW) Slot Sub-Array Antenna for 35 GHz (45도 선형 편파 발생용 SIW 슬롯 Sub-Array 안테나 설계 및 해석)

  • Kim, Dong-Yeon;Nam, Sangwook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.4
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    • pp.357-365
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    • 2013
  • The 4 by 4 series slot sub-array antenna is proposed using substrate integrated waveguide(SIW) technology for 35 GHz of Ka band application. The proposed antenna is realized with multi-layered structure for compact size and easy integration features. 4 by 4 radiating slots are arrayed on top PCB with equal spacing and the feeding SIWs are arranged on middle and bottom PCBs for uniform power distribution. The multi-layered antenna is realized using RT/Duroid 5880 that has dielectric constant of 2.2 and the total antenna size is $750.76mm^2$. The individual parts such as radiators and feeding networks are simulated using full-wave simulator CST MWS. Furthermore, the total sub-array antenna also fabricated and measured the electrical performances such as impedance bandwidth under the criteria of -10 dB(490 MHz), maximum gain(18.02 dBi), sidelobe level(SLL)(-11.0 dB), and cross polarization discrimination (XPD)(-20.16 dB).

Ku-Band Transitions between Microstrip and Substrate Integrated Waveguide and Microstrip and Hollow Substrate Integrated Waveguide (Ku-대역 마이크로스트립-SIW 및 마이크로스트립-HSIW 천이 구조)

  • Hong, Sung-June;Kim, Seil;Lee, Min-Pyo;Lim, Jun-Su;Kim, Dong-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.30 no.2
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    • pp.95-103
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    • 2019
  • In this paper, we present a microstrip-to-substrate integrated waveguide(SIW) transition and microstrip-to-hollow SIW(HSIW) transition for Ku-band satellite communication systems. For the complete utilization of the HSIW, a structure filled with air instead of a dielectric material, a microstrip-to-HSIW transition is designed, fabricated, and compared with a microstrip-to-SIW transition. A back-to-back microstrip-to-SIW transition is measured in the range 12~18 GHz; it exhibits a return loss ${\geq}20dB$ and an insertion loss of $1.5{\pm}0.2dB$. In contrast, a back-to-back microstrip-to-HSIW transition exhibits a return loss of at least 15 dB and an insertion loss of $0.55{\pm}0.2dB$ in the same frequency range.

Spurious Suppressed Substrate Integrated Waveguide Bandpass Filter Using Stepped-Impedance Resonator

  • Lee, Il-Woo;Nam, Hee;Yun, Tae-Soon;Lee, Jong-Chul
    • Journal of electromagnetic engineering and science
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    • v.10 no.1
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    • pp.1-5
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    • 2010
  • A spurious suppressed bandpass filter is proposed and discussed using the stepped impedance resonator(SIR) on a substrate-integrated waveguide(SIW) structure with a double-layer substrate. The second resonance of the fundamental $TE_{10}$ mode can be controlled by adjusting the electrical length and impedance ratio of each SIR. The spurious suppressed SIW bandpass filter shows the measurement results of the insertion loss of 3.98 dB and return loss of less than 11.58 dB at the center frequency of 12 GHz. Also, the second spurious frequency is improved to about $1.5f_0$ compared with $1.33f_0$.

An Eight-Way Radial Switch Based on SIW Power Divider

  • Lee, Dong-Mook;An, Yong-Jun;Yook, Jong-Gwan
    • Journal of electromagnetic engineering and science
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    • v.12 no.3
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    • pp.216-222
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    • 2012
  • This paper presents a single-pole eight-throw switch, based on an eight-way power divider, using substrate integrate waveguide(SIW) technology. Eight sectorial-lines are formed by inserting radial slot-lines on the top plate of SIW power divider. Each sectorial-line can be controlled independently with high level of isolation. The switching is accomplished by altering the capacitance of the varactor on the line, which causes different input impedances to be seen at a central probe to each sectorial line. The proposed structure works as a switching circuit and an eight-way power divider depending on the bias condition. The change in resonant frequency and input impedance are estimated by adapting a tapered transmission line model. The detailed design, fabrication, and measurement are discussed.