• 제목/요약/키워드: SIS junction

검색결과 12건 처리시간 0.018초

밀리미터파 믹서용 초전도 턴넬 접합 설계와 제작에 관한 연구 (A Study on the Fabrication and Design of Superconducting Tunnel junction for Millimeter Wave Mixers)

  • 한석태;이창훈;서정빈;박동철
    • 전자공학회논문지A
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    • 제30A권10호
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    • pp.12-19
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    • 1993
  • Because of their high sensitivity and moderate bandwidth, superconducting receivers with SIS (Superconductor Insulator Superconductor) tunnel junction mixer are now widely used for millimeter wave radio astronomy. In this paper we have introduced how to determine the parameters of SIS tunnel junction which have to be optimized to achieve a good mixer performance. From these results of optimized junction parameters determined by this methods, SIS junctions which consist of a series array of four Nb/Al-AlOx/Nb junctions with each area 3.4${\mu}m^{2}$ have been fabricated by SNEP (Selective Niobium Etching Process) and RIE (Reactive Ion Eching). Also we have tested their DC current-voltage characteristics. These SIS junctions will be used as a mixer for 100GHz band cosmic waves receiver.

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THE DEVELOPMENT OF A LOW NOISE 230 GHZ SIS RECEIVER IN NAGOYA UNIVERSITY

  • XIAO K. C.;OGAWA H.;FUKUI Y.;SUZUKI H.
    • 천문학회지
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    • 제29권spc1호
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    • pp.413-414
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    • 1996
  • A 230 GHz SIS tunnel junction receiver has been being developed for radio astronomy in Nagoya University. In this heterodyne receiver, we use a $\~$1/3 reduced hight rectangular waveguide SIS mixer with two tuning elements as front end. The mixer block with SIS junction was cooled to 4K with a closed cycle He-gas refrigerator. So far, a double sideband receiver noise temperature lower than l00K in 222-237 GHz is obtained. The receiver exhibits a best DSB noise temperature of 69K at 236 GHz as well as 228 GHz.

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120∼180 GHz 대역 SIS (Superconductor-Insulator-Superconductor) 접합 믹서의 개발 (Development of an SIS(Superconductor-Insulator-Superconductor) Junction Mixer over 120∼180 GHz Band)

  • Chung, Moon-Hee;Lee, Changhoon;Kim, Kwang-Dong;Kim, Hyo-Ryoung
    • 한국전자파학회논문지
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    • 제15권8호
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    • pp.737-743
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    • 2004
  • 120∼180 GHz 대역의 고정 튜닝방식을 사용한 SIS(Superconductor-Insulator-Superconductor) 접합 믹서를 개발 하였다. 이 믹서는 노베야마 전파천문대에서 제작된 6개 직렬 연결 Nb/Al-A1$_2$O$_3$/Nb SIS 접합 소자를 사용하였으며 석영유리 기판에 제작된 이 SIS 칩은 전 주파수 대역에서 입력신호 결합을 향상시키기 위해 half-height 도파관의 중심에 놓여 있다. 본 논문에서 개발된 SIS 믹서는 기계적인 튜닝 장치를 사용하지 않으며 RF 신호와 LO 전력은 냉각된 십자형 방향성 결합기를 통해서 믹서에 공급된다. 또한 IF 신호 손실을 줄이기 위해 SIS 믹서의 IF 출력 임피던스를 IF 증폭단의 50 $\Omega$ 입력 임피던스에 정합 시켰다. SIS 수신기의 측정된 DSB 잡음온도는 120∼180 GHz 대역에서 32∼131 K이며 본 논문에서 개발된 SIS 믹서는 대덕전파천문대의 14 m 전파망원경에 설치되어 전파천문 관측에 사용되고 있다.

85GHz-115Ghz 대 우주전파 관측용 초전도체 믹서 설계 (The design of 85GHz-115Ghz band SIS mixer for the observing cosmic radio waves)

  • 한석태;김효령;이창훈;박종애;정현수;김광동;김태성;박동철
    • 전자공학회논문지A
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    • 제33A권6호
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    • pp.90-98
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    • 1996
  • We have evaluated the theoretical conversion loss and noise temperature of mixer using the quantum mixer theory and the method to determine the embedding impedance of waveguide-type mixer mount. At fixed backshort position of the mixer, the calculated SSB mixer conversion loss and mixer noise temperature are 5 dB and 10K within frequency range form 85 GHz to 115 GHz, respectively. The SIS mixer has been developed by using through on the calculated rsutls to observe cosmic radio waves. SIS junction of mixer is Nb/Al-AlOx/Nb and it consists of four series array. Area of each of junction is about 2.5${\mu}m^{2}$. The average receiver noise temperature of manufactured receiver with this mixer is about 30 K(DSB). The receiver noise temperature is much lower than that of receiver with a mixer using mechanical tuning backshort.

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RSFQ 회로 제작용 SINIS 조셉슨 접합기술 (SINIS Technology for RSFQ Circuit Fabrication)

  • 김규태;김문석;;박종혁;한택상
    • 한국초전도저온공학회:학술대회논문집
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    • 한국초전도저온공학회 2003년도 추계학술대회 논문집
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    • pp.103-105
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    • 2003
  • The high speed of RSFQ circuits is based on the self-resetting in the overdamped Josephson junctions. The SIS technology using Nb/A1$_2$O$_3$/Nb trilayer has been successfully adopted as a standard technology. However the newly suggested SINIS technology attracts interest because the junction itself is overdamped without any external shunt, and provides possibility of simplification of RSFQ circuit design and fabrication. In this paper we demonstrate RSFQ circuit fabrication process using SINIS technology.

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고온초전도체 in-situ ramp-edge 형태의 조셉슨 접합 제작 및 특성 (Fabrication and Characterization of High Temperature in-situ Ramp-edge Type Josephson Junction)

  • 허윤성;김진태;황윤석;이순걸;박광서;김인선;박용기;박종철
    • 한국재료학회지
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    • 제8권3호
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    • pp.263-267
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    • 1998
  • 본 연구에서는 금속 칼날 마스크와 펄스형 레이저 증착장치를 이용하여 $YBa_2Cu_3O_{7-\delta}$/$SrTiO_{3}$/$YBa_2Cu_3O_{7-\delta}$ 다층박막 형태의 In-situ SIS ramp dege 형태의 접합을 제작하였으며, 이의 특성을 조사하였다. 접합은 RSJ 형태의 전류-전압 특성ㅇ르 나타내고 있으며, 온도 변화에 따른 접합의 normal resistance는 약 $18 \omega$으로 온도에 무관하게 일정한 값을 나타내었다. 접합형태를 이용하여 감도(transfer function, dV/$d\Phi$)가 약 $22\mu$V/$\Phi_{0}$인 dc-SQUID센서를 제작하였으며, in-situ SIS ramp edge 형태의 접합이 센서로의 응용가능성을 충분히 가지고 있음을 보여 주었다.

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100 GHz 대역 도파관형 SIS 믹서의 임피던스 정합 효율에 관한 해석 (A study on an analysis of the impedance matching efficiency of 100 GHz band waveguide - type SIS mixer)

  • 한석태;김효령;이창훈;박종애;정현수;김광동;김태성;박동철
    • 전자공학회논문지A
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    • 제33A권6호
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    • pp.81-89
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    • 1996
  • Quantum RF impedance of SIS (superconductor insulator superconductor) junction has been analyzed by using through on tucker's quantum mixer theory in the frequency range form 80 GHz to 120 GHz. The embedding impedance of waveguide-type mixer mount and its equivalent circuit have been evaluated. From these evaluated results, the impedance matching efficiency between mixer mount embedding impedance and mixer port impedance of upper-side band and IF which were determined by augmented admittance matrix with given backshort position has been discussed in detail. It is found that the mixer with fixed backshort mount ahs a impedance matching efficiency about 80% at each port of mixer within 85GHz to 115GHz, which implys a conversion los of mixer would be good enough to be operated such a wide band frequency range. Therefore, the theoretical evaluated results show that our method can be used ot design the mixer mount without any mechanical tuning elements such a backshort or an E-plane tunners for wide band operation.

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전압 측정표준용 조셉슨 접합 어레이: 직렬 어레이에서 상호 결합된 자체발진의 마이크로파 증진 (Josephson Junction Array for Voltage Metrology: Microwave Enhancement by Coupled Self-Generations in Series Array)

  • 김규태;김문석;정연옥
    • Progress in Superconductivity
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    • 제7권1호
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    • pp.11-16
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    • 2005
  • Coupling of non-linear oscillators have long been an interesting problem for physicists. The coupling phenomena have been frequently observed in Josephson junction series array, which have been used for Josephson voltage standard. Interestingly pronounced self-generation effect has been found during recent development of Josephson arrays for programmable Josephson voltage standard. But the coupling effect between the self-generations is not fully understood yet. We present harmonically approximated analytical solutions for coupled self-generations in the Josephson arrays, i.e., Superconductor-Insulator-Normal metal-Insulator-Superconductor (SINIS) array, externally shunted Superconductor-Insulator-Supercondctor (es-SIS) array, Superconductor-Normal metal-Superconductor (SNS) array. We find that the coupling between the self-generated Josephson oscillations through microwave transmission line plays critical role in microwave property of the Josephson array.

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SrTiO$_3$/(MgO/)Al$_2O_3$(1120) 위에 쌍에피택셜하게 성장한 Y$_1Ba_2Cu_3O_{7-x}$와 La$_{0.2}Sr_{0.8}MnO_3$ 박막의 조셉슨 및 자기저항 특성연구 (Josephson Property and Magnetoresistance in Y$_1Ba_2Cu_3O_{7-x}$ and La$_{0.2}Sr_{0.8}MnO_3$ Films on Biepitaxial SrTiO$_3$/(MgO/)Al$_2O_3$(1120))

  • 이상석;황도근
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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    • pp.185-188
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    • 1999
  • Biepitaxial Y$_1Ba_2Cu_3O_{7-x}$ (YBCO) and La$_{0.2}Sr_{0.8}MnO_3$ (LSMO) thin films have been prepared on SrTiO$_3$ buffer layer and MgO seed layer grown on Al$_2O_3$(11${\bar{2}}$0)substrates by dc-sputtering with hollow cylindrical targets, respectively. We charaterized Josephson properties and significantly large magnetoresistance in YBCO and LSMO films with 45$^{\circ}$ grain boundary junction, respectively. The observed working voltage (I$_cR_n$) at 77 K in grain boundary junction was below 10${\mu}$V, which is typical I$_cR_n$ value of single biepitaxial Josephson junction. The field magnetoresistance ratio (MR) of LSMO grain boundary juncoon at 77K was enhanced to 13%, which it was significant MR value with high magnetic field sensitivity at a low field of 250 Oe. These results indicate that inserting the insulating layer instead of the grain boundary layer with metallic phase can be possible to apply a new SIS Josephson junction and a novel magnetic device using spin-polarized tunneling junction.

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