• 한국전기전자재료학회논문지
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• 제17권11호
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• pp.1156-1166
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• 2004

Antimony profiles by MeV implantation are measured by secondary ion mass spectrometry (SIMS) and spreading resistance (SR). The moments of SIMS and simulated profiles are calculated and compared for the exact range in MeV energy. SRIM, DUPEX, ICECREM, and TSUPREM4 simulation programs are used for the calculation of range 1D, 2D. SRIM is a Monte Carlo simulation program and different inter-atomic potentials can be used for the calculation of nuclear stopping power cross-section (Sn) and range moments. Nevertheless, the range parameters were not influenced from nuclear stopping power in MeV. Through the modification of electronic stopping power cross-section (Se), the results of simulation are remarkably improved and matched very well with SIMS data. The values of electronic stopping power are optimized for Sb high energy implantation. For the electrical activation, Sb implanted samples are annealed under $N_2$ and $O_2$ ambient. Finally, Oxidation retard diffusion(ORD) effect of Sb implanted sample are demonstrated by SR measurements and ICECREM simulation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.26-29
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• 2001

SrBi$_2$Ta$_2$$O_{9}$ thin films were etched at high-density C1$_2$/CF$_{4}$/Ar in inductively coupled plasma system. The etching of SBT thin films in C1$_2$/CF$_{4}$/Ar were chemically assisted reactive ion etching. The maximum etch rate was 1300 $\AA$/min at 900W in Cl$_2$(20)/CF$_4$(20)/Ar(80). As f power increase, radicals (F, Cl) and ion(Ar) increase. The influence of plasma induced damage during etching process was investigated in terms of the surface morphology and th phase of X-ray diffraction. The chemical residue was investigated with secondary ion mass spectrometry.y.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.51.2-51.2
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• 2015

Understanding interfacial phenomena has been one of the main research issues not only in semiconductors but only in life sciences. I have been trying to meet the atomic scale surface and interface analysis challenges from semiconductor industries and furthermore to extend the application scope to biomedical areas. Optical imaing has been most widely and successfully used for biomedical imaging but complementary ion beam imaging techniques based on mass spectrometry and ion scattering can provide more detailed molecular specific and nanoscale information In this presentation, I will review the 27 years history of medium energy ion scattering (MEIS) development at KRISS and DGIST for nanoanalysis. A electrostatic MEIS system constructed at KRISS after the FOM, Netherland design had been successfully applied for the gate oxide analysis and quantitative surface analysis. Recenlty, we developed time-of-flight (TOF) MEIS system, for the first time in the world. With TOF-MEIS, we reported quantitative compositional profiling with single atomic layer resolution for 0.5~3 nm CdSe/ZnS conjugated QDs and ultra shallow junctions and FINFET's of As implanted Si. With this new TOF-MEIS nano analysis technique, details of nano-structured materials could be measured quantitatively. Progresses in TOF-MEIS analysis in various nano & bio technology will be discussed. For last 10 years, I have been trying to develop multimodal nanobio imaging techniques for cardiovascular and brain tissues. Firstly, in atherosclerotic plaque imaging, using, coherent anti-stokes raman scattering (CARS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS) multimodal analysis showed that increased cholesterol palmitate may contribute to the formation of a necrotic core by increasing cell death. Secondly, surface plasmon resonance imaging ellipsometry (SPRIE) was developed for cell biointerface imaging of cell adhesion, migration, and infiltration dynamics for HUVEC, CASMC, and T cells. Thirdly, we developed an ambient mass spectrometric imaging system for live cells and tissues. Preliminary results on mouse brain hippocampus and hypotahlamus will be presented. In conclusions, multimodal optical and mass spectrometric imaging privides overall structural and morphological information with complementary molecular specific information, which can be a useful methodology for biomedical studies. Future challenges in optical and mass spectrometric imaging for new biomedical applications will be discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.192-192
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• 1999

SIMS(Secondary Ion Mass Spectrometry)는 다른 표면 분석장비와 비교하여^g , pp m,^g , pp b 단위의 미량분석이 가능한 장비로서, 특히 depth Profiling을 위한 dynamic SIMS는 Mass Spectrometer의 종류에 따라 Quadrupole SIMS (Q-SIMS)와, Magnetic Sector SIMS (M-SIMS)로 분류된다. 한편, Q-SIMS와 달리 M-SIMS의 경우, Transmission을 높여 주기 위해 Sample Holder에 수 keV의 bias를 걸어 주는데, 이로 인하여 분석 원소에 대한 Sensitivity가 향상되어 지는 반면, RSF의 변화와 같은 분석상의 Artifact가 발생하게 된다. 일반적으로 Q-SIMS의 경우에는 RSF의 RSD(Relative Standard Deviation)가 1%이내에서 보고되고 있지만 M-SIMS에 있어서는 이러한 Deviation이 M-SIMS보다 크게 나타난다. 이 차이는 주로 Sample Holder와 Immersion Lens 사이에 형성되는 Magnetic Field의 왜곡과 Spectrometer의 문제로부터 발생한다. 본 논문에서는 Sample Holder의 종류 및 holder so window 위치에 따라 RSF의 차이를 측정하고 그 data를 RS/1 통계 Package를 이용하여 계량적으로 검증하였으며, 그 차이의 원인과 대책을 제시하고자 한다. 실험에 사용된 Sample은 Si(100) p-type Wafer에 Boron을 이온 주입하여 제작하였다. 이온 주입 장비는 Varian E-500HP이며, 5.0E13 ions/cm2의 dose양을 80keV의 Energy로 각각 7도와 22도의 Tilt와 Twist Angle로 이온 주입을 하였다. SIMS분석에 사용된 Sample Holder는 각각 3 Hole, 9 Hole Type HOlder이며, 분석은 Cameca IMS-6f를 사용하여 B에 대한 Matrix Peak으로 28Si++를 얻었다. 실험 결과 3 Hole Type Sample Holder의 경우 RSF의 RSD는 5.84%, 9Hle Type Sample Holder의 경우는 14.3%로 나타났으나 분석 Window의 위치에 따르는 Grouping을 실시한 결과, 3 Hole Type Sample Holder의 경우 1.2%, 9Hole Type Sample Holder의 경우 9.8%로 RSF의 변화가 감소하였다. 이러한 Deviation은 Sample Holder를 Mount시킬 때 세 개의 Screw를 이용하여 Immersion Lens와의 평형을 잡아주기 때문에 발생하며, 이 Munting을 정확히 해줌으로써 RSF의 변화를 줄일 수 있으나, 실제로 완벽한 Mounting이 불가능하기 때문에 RSF를 일정하게 하기 위해서는 Sample Holder so Window의 취치를 일정하게 설정한 후 분석을 실시해야 한다고 판단된다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.127.2-127.2
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• 2011

본 연구에서는 RF Magnetron Sputtering System을 이용하여 ZnO계 투명전도막 증착시 Vaporization된 MeOH를 유입함으로써 박막증착과 동시에 표면의 Roughness를 제어하여 이에따른 전기적 특성 및 광학적 특성의 개선에 대하여 연구하였다. 실험방법으로 기존의 RF Magnetron Sputtering System에 Vaporization이 가능한 Ultrasonic을 이용하여 MeOH를 Vaporized시켜 MFC Controll을 통해 챔버에 유입하여 ZnO계 투명전도막의 박막증착과 동시에 표면 Texturing을 하였다. ZnO계 투명전도막의 박막증착시 Vaporized MeOH의 유입에 따른 광학적 특성변화를 UV-visible-nIR spectrometry로 조사하였으며, 전기적 특성 변화를 4-Point-Probe로 조사하였으며, 표면적 특성 변화를 Atomic Force Microscope(AFM), Scanning Electron Microscopy(SEM)를 조사하였으며, 박막의 결정성장특성 변화를 X-ray Diffraction(XRD)으로 조사하였으며, Vaporized MeOH 유입에 따른 박막의 성분분석을 Secondary Ion Mass Spectrometry (SIMS)로 조사함으로써 최적의 조건 및 공정을 확립하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.12-16
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• 2001

We investigated the etching characteristics of $YMnO_3$ thin films in high-density plasma etching system. In this study. $YMnO_3$ thin films were etched with $CF_{4}/Ar$ gas chemistries in inductively coupled plasma (ICP). Etch rates of $YMnO_3$ were measured according to gas mixing ratios. The maximum etch rate of $YMnO_3$ is 18 nm/min at $CF_{4}/(CF_{4}+Ar)$ of 20%. In optical emission spectroscopy (OES) analysis, F radical and Ar* ions in plasma at various gas chemistries decreased with increasing $CF_4$ content. Chemical states of $YMnO_3$ films exposed in plasma were investigated with x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). There is a chemical reaction between metal (Y, Mn) and F and metal-fluorides were removed effectively by Ar ion sputtering. $YF_x$, $MnF_x$ such as YF, $YF_2$, $YF_3$ and $MnF_3$ Were detected using SIMS analysis. The etch slope is about $65^{\circ}C$ and free of residues.

• 한국전기전자재료학회논문지
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• 제15권11호
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• pp.933-938
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• 2002

(Ba,Sr)TiO$_{4}$ (BST) thin films on Pt/Ti/SiO$_{2}$/Si substrates were deposited by a sol-gel method and the etch characteristics of BST thin films have been investigated as a function of gas mixing ratio. The maximum etch rate of the BST films was 440 $AA$/min under such conditions as: CF$_{4}$(CF$_{4}$＋Ar) of 0.2, RF-power of 700 W, DC-bias voltage of -200 V, pressure of 15 mTorr and substrate temperature of 30 $^{circ}C$. The selectivities of BST to Pt, SiO$_{2}$ and PR were 0.38, 0.25 and 0.09, respectively. In the XPS (X-ray photoelectron spectroscopy) analysis, Barium (Ba) and Strontium (Sr) component in BST thin films formed low volatile compounds such as BaFx, SrFx, which are forms by the chemical reaction with F atoms and is removed by Ar ion bombardment. Titanium (Ti) is removed by chemical reaction such as TiF with ease. The result of secondary ion mass spectrometry (SIMS) analysis confirmed the existence of the BaFx, SrFK, TiFx.

• 한국진공학회지
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• 제6권4호
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• pp.321-325
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• 1997

LCD용 칼라 필터를 제작하는 방법으로 감광성 고분자(photosensitive polymer)에 광 리소그라피(photolithography)기술이 많이 이용되어지고 있다. 이로 인해 감광성 고분자 표 면의 물리적, 화학적 성질이 변하게 되는데, 이는 후속 공정인 플라즈마 식각이나 ITO 전극 의 증착 등에도 많은 영향을 주므로, 각 공정에 따른 이들 고분자의 표면 연구는 매우 중요 하다. 본 논문에서는 blue 칼라 필터의 고분자 표면에 대한 연구를 SIMS와 XPS를 이용하 여 수행하였으며, 표면의 거칠기 변화를 AFM을 통해 관찰하였다. SIMS와 XPS결과로부터 초기 공정인 blue 칼라 필터를 스핀 코팅하고 pre bake한 상태에서는 주로 칼라 필터의 주 성분인 단량체와 결합제의 고분자 물질이 표면에 드러나 있다가, 노광 과정을 거치고 post bake한 시료에서는 색깔을 내는 안료 성분이 표면에 드러남을 확인하였고, AFM을 통해서 는 post bake후에 표면에 더 거칠어 짐을 관찰하였다.

• 한국표면공학회지
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• 제49권5호
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• pp.467-471
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• 2016

In order to investigate the Na gettering, PSG/$SiO_2$/Al-1%Si multilevel thin films were fabricated. DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and PSG/$SiO_2$ passivations, respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling and XPS (X-ray Photoelectron Spectroscopy) analysis were used to determine the distribution and binding energies of Na, Al, Si, O, P and other elements throughout the PSG/$SiO_2$/Al-1%Si multilevel thin films. Na peaks were mainly observed at the the PSG/$SiO_2$ interface and at the $SiO_2$/Al-1%Si interfaces. Na impurity gettering in PSG/$SiO_2$/Al-1%Si multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and O elements in PSG passivation appears to be $SiO_2$.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권5호
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• pp.211-215
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• 2001

SBT thin films were etched at different content of $Cl_2$ in $Cl_2$/Ar or $Cl_2/N_2$(80%). As $Cl_2$ gas increased in $Cl_2$/Ar or $Cl_2/N_2$ gas plasma. the etch rate decreased. The result indicates that physical puttering of charged particles is dominant to chemical reaction in etching SBT thin films. To evaluate the etching mechanism of SBT thin films, x-ray photoelectron to chemical reaction in etching SBT thin films. To evaluate the etching mechanism of SBT thin films, x-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS) and atomic force microscopy (AFM) were carried out. From the result of AFM, the rms values of etched samples in Ar only or $Cl_2$ only plasma were higher than that of as-deposited, $Cl_2$/Ar and $Cl_2/N_2$ plasma. This can be illustrated by a decrease of Bi content of nonvolatile etching products (Sr-Cl and Ta-Cl), which are revealed by XPS and SIMS.