• 제목/요약/키워드: SIC (Silicon Carbide)

검색결과 21건 처리시간 0.022초

탄화규소-점토-Kaolin Chamotte 계의 소결에 미치는 첨가제 $Al_2O_3$의 영향 (Effect of $Al_2O_3$ as Additives on the Sintering of Sic-Clay-Kaolin Chomotte System)

  • 백용혁;박종훈
    • 한국세라믹학회지
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    • 제18권1호
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    • pp.41-47
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    • 1981
  • The sintering characteristics of the SiC-Clay-Kaolin chamotte system were studied by addition of $Al_2O_3$ for the manufacture of silicate-bonded silicon carbide refractories at $1350^{\circ}C$. The sinterbilit of SiC-Binder mixture was measured by apparent porosity and compressive strength. And its mineral compositions were identified with X-ray diffractometer. The following results were obtained; 1) Optimum amount of mixed clay ($\textrm{Al}_2\textrm{O}_3$ 40 wt% mixed) as a binder was about 25wt% 2) Appropriate mixing ratio of mixed Kaolin chamotte ($\textrm{Al}_2\textrm{O}_3$ 40wt% mixed) was about 30wt% in the clay Kaolin chamotte binder. 3) Variation of apparent porosity and compressive strength of sintered SiC-binder mixture fired at $1350^{\circ}C$ were due to the sinterbility of clay.

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단일전구체(1,3-DSB)에 의한 저온 SiC박막 성장에 관한 연구 (A Study on the Low Temperature Growth of SiC Film with a 1,3-DSB Precursor)

  • 양재웅;노대호;윤진국;김재수
    • 한국표면공학회지
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    • 제36권2호
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    • pp.141-147
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    • 2003
  • Silicon carbide thin film was deposited in APCVD and LPCVD system with 1,3-DSB precursor 1,3-DSB is the single precursor to deposit SiC on Si at low temperature. SiC film was deposited at $850^{\circ}C$ lower than ordinary temperature ($1000~1200^{\circ}C$) in CVD process. SiC thin film glowed to high oriented (111) plane in APCVD system. In LPCVD system, SiC film groved to preferred (220) plane at same temperature. This discrepancy between preferred planes can be described by the difference of deposition mechanism. Amorphous phase and crystal defect were observed in APCVD system with the main growth mechanism of mass transport limited region. But in LPCVD system, we got the SIC film of uniform, faceted structure and high quality.

Scf 파라메타에 의한 세라믹 마멸 평가 (The Assessment of Ceramic Wear by the Parameter Scf)

  • 김상우;김석삼
    • Tribology and Lubricants
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    • 제12권1호
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    • pp.56-65
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    • 1996
  • The result of wear test for ceramic materials was assessed by Scf parameter to verify the usefulness of the proposed Scf parameter. Friction and wear tests were carried out with ball on disk type. The materials used in this study were HIPed Alumina $(Al_2O_3)$, Silicon carbide (sic), Silicon nitride $(Si_3N_4)$ and Zirconia $(ZrO_2)$. The tests were carried out at room temperature with self mated couples of ceramic materials under lubricated condition. Turbine oil was used as a lubricant. In this test, increasing the load, specific wear rates and wear coefficients of four kinds of ceramic materials had a tendency to increase. The wear coefficients of ceramic materials were in order of $Al_2O_3, SiC, Si_3N_4, ZrO_2$. Worn surfaces investigated by SEM had residual surface cracks and wear particles caused by brittle fracture. As the fracture toughness of ceramic materials was higher, wear resistance more increased. The roughness of worn surface had correlation with wear rate. The wear rate(W$_{s}$) and Scf parameter showed linear relationship in log-log coordinates and the wear equation was given as $W_s = 5.52 $\times$ Scf^{5.01}$.

SiC 박막을 이용한 액정의 수직배향효과 (Homeotropic Alignment Effect of Liquid Crystal on the SiC Thin Film Layer)

  • 박창준;황정연;강형구;김영환;서대식;안한진;김경찬;김종복;백홍구;임성훈;박규창;장진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.502-505
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    • 2004
  • We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a SiC (Silicon Carbide) thin film. SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability make SiC an attractive candidate for electronic applications. A homeotropic alignment of nematic liquid crystal by ion beam (IB) exposure on the SiC thin film surface was achieved. The about $87^{\circ}$ of stable pretilt angle was achieved at the range from $30^{\circ}$ to $45^{\circ}$ of incident angle. The good LC alignment is maintained by the ion beam alignment method on the SiC thin film surface until annealing temperature of $300^{\circ}C$. Consequently, homeotropic alignment effect of liquid crystal and the good thermal stability by the ion beam alignment method on the SiC thin film layer can be achieved.

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단시간과 장시간의 소결방법에 따른 지르코니아의 굴곡 강도와 미세구조의 변화 (The effect of short and long duration sintering method on microstructure and flexural strength of zirconia)

  • 이하빈;이태희;김지환
    • 대한치과기공학회지
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    • 제42권2호
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    • pp.73-79
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    • 2020
  • Purpose: The aim of this study was to investigate the influence of short and long duration sintering on microstructure and flexural strength of zirconia. Methods: To conduct three-point bending test, Zirconia specimens are milled according to ISO 6872 guidelines(N=18, n=9 per group). Two specimens group(n=8) is sintered for 10 hours(Standard schedule) and 3 hours(Speed schedule) at the peak temperature of 1550℃ with silicon carbide sintering furnace. Flexural strength of specimens are measured by instron. After coating each specimen(n=1), microstructure of specimens is observed using Scanning Electron Microscope(SEM). T-test was utilized to statistically assess the data. Results: The mean and standard deviation value of the flexural strength for standard schedule group are 578.15±57.48Mpa, that of speed schedule are 465.9±62.34Mpa. T-test showed significant differences in flexural strength between two zirconia specimen group which applied standard schedule and speed schedule respectively(p<0.05). Conclusion: The result of this study showed that the increase in sintering time led to increased grain size, and also to a positive effect on the flexural strength.

DEPOSITION OF A-SIC:H FILMS ON AN UNHEATED SI SUBSTRATE BY LOW FREQUENCY (50Hz) PLASMA Cvd

  • Shimozuma, M.;Ibaragi, K.;Yoshion, M.;Date, H.;Yoshida, K.;Tagashira, H.
    • 한국표면공학회지
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    • 제29권6호
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    • pp.797-802
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    • 1996
  • Hydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited on unheated substrates by low frequency (50Hz) plasma using $SiH_4+CH_4+H_2$ gas mixtures. Deposition rate, refractive index, optical band gap, Vickers hardness and IR spectrum of the deposited a -SiC:H films have been measured for various rations of gas flow rates k(=$CH_4/SiH_4$, 0.5k4) with a constant $H_2$ flow rate (100sccm). As k increases, the deposition rate of the a-SiC:H films increases up to the maximum value of about 220nm/h at k=2.5, and then it decreases. The refractive index of the films was 2.6 for k=2.5, while the optical band gap of the films was 3.3eV for k=2.2. The maximum value of Vickers hardness of the films was 1500Hv at k=1. The infrared transmission measurement shows that the films contain both Si-C and Si-$CH_3$ bonds.

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반응소결 탄화규소 다공체의 기계적 특성 (Mechanical Properties of Porous Reaction Bonded Silicon Carbide)

  • 황성식;박상환;한재호;한경섭;김찬목
    • 한국세라믹학회지
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    • 제39권10호
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    • pp.948-954
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    • 2002
  • 차세대 발전 시스템에서 사용되는 고온 가스 필터용 지지층 소재를 제조하기 위하여 용융 Si 침윤 방법으로 기공율이 32∼36%, 주기공 크기가 37∼90 ${\mu}m$ 범위를 갖는 고강도 다공질 반응소결 탄화규소(RBSC)를 개발하였다. 반응소결 탄화규소 다공체의, 최대 파괴강도는 120MPa이었으며, 용융 Si 침윤 방법으로 제조된 반응소결 탄화규소 다공체에서는 SiC 입자 사이에 SiC/Si로 이루어진 기지상이 형성되어 있기 때문에 파괴 강도 및 열충격 특성이 점토 결합 탄화규소 다공체 보다 우수하였다. 반응소결 탄화규소 다공체의 기공율 및 기공 크기는 잔류 Si의 양 및 성형체에 사용한 SiC 입자 크기에 따라 다르게 나타났다.

전력소자 응용을 위한 4H-SiC MESFET 대신호 모텔링 (4H-SiC MESFET Large Signal modeling for Power device application)

  • 이수웅;송남진;범진욱;안철
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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    • pp.229-232
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    • 2001
  • Modified Materka-Kacprzak 대신호 MESFET(Metal Semiconductor Field Effect Transistor) model을 사용하여 4H-SiC MESFET의 대신호 모델링을 수행하였다. Silvaco사의 소자 시뮬레이터인 ATLAS를 사용하여 4H-SiC MESFET 소자 시뮬레이션을 수행하고, 이 절과를 modified Materka 대신호 모델을 사용하여 모델링 하였다. 시뮬레이션 및 모델링 결과는 -8V의 pinch off 전압과 V/sub GS=0V, V/sub DS=25V에서 I/sub DSS=270㎃/㎜, G/sub m=45㎳/㎜를 얻을 수 있었고, 진력 특성 시뮬레이션을 통해 2㎓, V/sub GS=-4V, V/sub DS=25V에서 1()dB의 Gain과 34dBm(1dB compression point)의 출력전력, 7.6W/㎜의 전력밀도, 37%의 PAE(power added efficiency)를 얻을 수 있었다.

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Study on Co- and Ni-base $Si_2$ for SiC ohmic contact

  • 김창교;양성준;노일호;장석원;조남인;정경화
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.167-171
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    • 2003
  • We report the material and electrical properties of $CoSi_2$ and $NiSi_2$contacts to n-type 4H-SiC depending on the post-annealing and the metal covering conditions. The Ni and Co silicides are deposited by RF sputtering with Ni/Si/Ni and Co/Si/Co films separately deposited on 4H-SiC substrates. The deposited films are annealed at $800\;^{\circ}C$ in $Ar:H_2$ (9:1) gas ambient. Results of the specific surface resistivity measurements show that the resistivity of the Co-based metal contact was the one order lower than that of the Ni-based contact. The specific contact resistance was measured by a transmission line technique, and the specific contact resistivity of $1.5{\times}10^{-6}\;{\Omega}\;cm^2$ is obtained for Co/Si/Co metal structures after a two-step annealing; at $550\;^{\circ}C$ for 10 min and $800\;^{\circ}C$ for 3min. The physical properties of the contacts were examined by using XRD and AES, and the results indicate that the Co-based metal contacts have better structural stability of silicide phases formed after the high temperature annealing.

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레진시멘트의 접착 내구성에 관한 연구 (THE BONDING DURABILITY OF RESIN CEMENTS)

  • 조민우;박상혁;김종률;최경규
    • Restorative Dentistry and Endodontics
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    • 제32권4호
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    • pp.343-355
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    • 2007
  • 4종의 레진시멘트를 통한 상아질과 간접 레진 수복물 간의 인장결합강도를 열순환 시효처리 여부에 따라 측정하여 비교하고, 주사전자현미경 관찰을 통하여 각 레진시멘트의 접착 내구성을 평가하고자 시행하였다. 48개의 건전한 제3대구치의 상아질 표면을 평탄하게 노출시키고 #320 grit Sic Paper로 연마하였다. 복합레진 블록을 제작하여 #600 grit Sic Paper로 연마한 후에 접착면을 Sandblast로 처리하였다. 각각의 레진시멘트로 제조사 지침에 따라 적용하여 복합레진 블록을 상아질 표면에 접착하였다. 이후 제작된 시편을 열순환시키지 않거나, 1,000회, 5,000회 열순환 시킨 후 ($5^{\circ}C\;-\;55^{\circ}C$) 미세인장결합강도를 측정하였다. 열순환 전 시편의 접착계면 (수직절단면)과 파절된 시편의 상아질 파단면을 전자현미경 관찰하여 다음과 같은 결론을 얻었다. 1. Variolink II의 결합강도는 다른 실험군보다 높은 결합강도를 보여주었으며, 1,000회 열순환 후 유의성 있게 결합강도가 감소되었다 (p < 0.05). 3. Multilink의 결합강도는 열순환에 가장 많은 영향을 받았으며 1,000회 열순환 이후 유의성 있게 감소되었다 (p < 0.05). 3. Panavia F 2.0과 Rely X Unicem의 결합강도는 열순환에 의하여 감소되지 않았다 (p > 0.05). 4. 접착형 레진시멘트는 복합레진형 레진시멘트에 비해서 열처리 전후 모두 낮은 결합강도를 보여주었다. 5. 결합강도가 높은 Vaviolink II와 Multilink에서는 혼합형 파괴양상을 보였고, 결합강도가 낮은 Panavia F 2.0에서는 접착성 파괴 양상을 나타내었다. 이상의 연구 결과를 토대로 적절한 전처리와 접착제를 도포한다면 복합레진형 레진시멘트는 접착형 레진시멘트보다 결합강도와 그 내구성이 우수하다고 할 수 있을 것이다. 접착성 간접 수복물의 초기 결합강도와 내구성은 레진시멘트의 접착과정과 종류, 형태에 의해 영향을 받기 때문에 이들의 적절한 선택과 올바른 사용이 성공적인 수복을 위해 중요하다.