• 제목/요약/키워드: SIC (Silicon Carbide)

검색결과 21건 처리시간 0.019초

C/SiC 복합재료 제조시 Pulse-CVI에서 증착변수의 영향 연구 (Studies on Effects of Deposition Parameters in Manufacturing of C/Sic composites by Pulse-CVI)

  • 김용탁;김영준;정귀영
    • 한국복합재료학회:학술대회논문집
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    • 한국복합재료학회 2001년도 추계학술발표대회 논문집
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    • pp.141-143
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    • 2001
  • Ceramic fiber-reinforced composites have good mechanical properties in hardness and durability. In this study, we studied the formation of SiC/C composites from methyltrichlorosilane and hydrogen by the Pulse-chemical vapor infiltration(PCVI) to deposit silicon carbide around the changes of the amount of deposit. SiC/C composites formed at $950^{\circ}C$, 20torr, Pulse-times (5s/60s). SEM of the cross sectional area of semple showed deposited silicon carbide around fibers.

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Silicon Carbide Coating on Graphite and Isotropic C/C Composite by Chemical Vapour Reaction

  • Manocha, L.M.;Patel, Bharat;Manocha, S.
    • Carbon letters
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    • 제8권2호
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    • pp.91-94
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    • 2007
  • The application of Carbon and graphite based materials in unprotected environment is limited to a temperature of $450^{\circ}C$ or so because of their susceptibility to oxidation at this temperature and higher. To over come these obstacles a low cost chemical vapour reaction process (CVR) was developed to give crystalline and high purity SiC coating on graphite and isotropic C/C composite. CVR is most effective carbothermal reduction method for conversation of a few micron of carbon layer to SiC. In the CVR method, a sic conversation layer is formed by reaction between carbon and gaseous reagent silicon monoxide at high temperature. Characterization of SiC coating was carried out using SEM. The other properties studied were hardness density and conversion efficiency.

탄화규소의 R-curve, 침식 및 마모 특성 (R-curve, erosion and wear of silicon carbide ceramics)

  • 채준혁;조성재;김석삼
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 1998년도 제27회 춘계학술대회
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    • pp.139-145
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    • 1998
  • This paper addresses the R-curve properties, wear resistance, and erosion resistance of the two silicon carbide ceramics with different microstructures, i.e. , fine grained SiC and in situ-toughened SiC(IST SIC). Fine grained SiC exhibits a relatively flat R-curve behavior whereas the IST SiC exhibits a increasing R-curve behavior. The increasing R-curve behavior in IST SiC is attributed to relatively weak grain boundaries. The rate of material removal during wear tests and erosion tests was higher for IST SiC than that for fine grained SiC. This is attributed to the weaker grain boundaries in IST SiC than that in fine grained SiC. It is implied that fracture toughness in short crack regime should be taken into consideration in the interpretation of the microscopical material removal process. We show that the higher the strength of grain boundaries is, the higher wear and erosion resistances are.

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SiC-CVD 공정에서 CFD 시뮬레이션의 응용 (APPLICATION OF CFD SIMULATION IN SIC-CVD PROCESS)

  • 김준우;한윤수;최균;이종흔
    • 한국전산유체공학회지
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    • 제18권3호
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    • pp.67-71
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    • 2013
  • Recently, the rapid development of the semiconductor industry induces the prompt technical progress in the area of device integration and the application of large diameter wafers for the price competitiveness. As a result of the usage of large wafers in the semiconductor industry, the silicon carbide components which have layers of silicon carbide on graphite or RBSC substrates is getting widely used due to the advantages of SiC such as high hardness and strength, chemical and ionic resistant to all the environments superior than other ceramic materials. For the uniform and homogeneous deposition of silicon carbide on these huge components, it needs to know about the gas flow in the CVD reactor, not only for the delicate adjustment of the process variables but more essentially for the cost reduction for the shape change of specimens and their holders on the stage of reactor. In this research, the CFD simulation is challenged for the prediction of the inner distribution of the gas velocity. Chemical reaction simulation is used to predict the distribution of concentration of the reacting gas with the rotating velocity of the stage. With the increase of the rotating speed, more uniform distribution of the reacting gas on the surface of the stage was obtained.

플라즈마 용사방식에 의해 형성된 페라이트-탄화규소 표면층의 마이크로파 흡수 특성(II) (Microwave Absorbing Characteristics of Ferrite-silicon carbide surface Films Produced)

  • 신동찬;손현
    • 한국통신학회논문지
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    • 제18권8호
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    • pp.1169-1175
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    • 1993
  • 레이다의 추적 및 탐색으로 부터 비행 물체를 보호하기 위한 목적으로, 알루미늄 합금표면에 페라이트-탄화규소 복합물인 마이크로파 흡수층을 플라즈마 용사방식으로 제작하였다. 본 논문에서는 페라이트-탄화규소층(I) 제조시 사용했던 탄화규소 입자의 평균크기인 34[rm]대신에15[rm]가 사용되었으며, 플라즈마 용사변수들 중에서 분말의 공급비율은 70[Kg/h]대신에 50[Kg/h] 그리고, 용사거리는 80[mm[ 대신에 100[mm]가 사용 되었다. X-band(8~12.4(GHz)레이다용 페라이트-탄화규소 전자파 흡수체를 실험적으로 설계하고 시험제작하여 전기적 특성을 평가한 결과, -lOdB의 반사량을 허용한도로 했을 때 약 2.8%의 대역폭이 얻어졌으며, 최대 흡수두께는 0.5(mm)로 매우 양호한 박층형 전자파 흡수체가 얻어졌다.

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CHARACTERISTICS OF FABRICATED SiC RADIATION DETECTORS FOR FAST NEUTRON DETECTION

  • Lee, Cheol-Ho;Kim, Han-Soo;Ha, Jang-Ho;Park, Se-Hwan;Park, Hyeon-Seo;Kim, Gi-Dong;Park, June-Sic;Kim, Yong-Kyun
    • Journal of Radiation Protection and Research
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    • 제37권2호
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    • pp.70-74
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    • 2012
  • Silicon carbide (SiC) is a promising material for neutron detection at harsh environments because of its capability to withstand strong radiation fields and high temperatures. Two PIN-type SiC semiconductor neutron detectors, which can be used for nuclear power plant (NPP) applications, such as in-core reactor neutron flux monitoring and measurement, were designed and fabricated. As a preliminary test, MCNPX simulations were performed to estimate reaction probabilities with respect to neutron energies. In the experiment, I-V curves were measured to confirm the diode characteristic of the detectors, and pulse height spectra were measured for neutron responses by using a $^{252}Cf$ neutron source at KRISS (Korea Research Institute of Standards and Science), and a Tandem accelerator at KIGAM (Korea Institute of Geoscience and Mineral Resources). The neutron counts of the detector were linearly increased as the incident neutron flux got larger.

카메라폰 모듈용 비구면 Glass렌즈 성형용 Silicon Carbide(SiC) 코어 초정밀 연삭가공에 관한 연구 (A Study on Ultra Precision Grinding of Aspheric SIC Molding Core for Camera Phone Module)

  • 김현욱;차두환;이동길;김상석;김혜정;김정호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.428-428
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    • 2007
  • 최근 고화질 카메라폰이 경박단소화 되는 경향에 따라 Plastic렌즈 또는 구면 Glass렌즈만으로는 요구되는 광학적 성능 구현이 힘들기 때문에 비구면 Glass렌즈에 대한 요구가 증가하고 있다. 이러한 비구면 Glass렌즈는 일반적으로 초경합금 성형용 코어를 이용한 고온압축 성형방식으로 제작되어지기 때문에 코어면의 초정밀 연삭가공 및 코어면 코팅기술 개발이 시급한 상황이다. 한편, 대표적인 난삭재 Silicon Carbide(SiC)는 광학적 특성 및 기계적 특성, 전기적 특성 등 우수한 특성을 가진 재료로서 우주망원경, 레이저 광 및 X선 반사용 미러 등 다종, 다양한 용도로 이용되고 있으며 전기, 전자, 정보, 정밀기기의 급격한 발전으로 SiC의 수요가 급격히 증가하고 있다. 비구면 Glass렌즈 성형용 코어를 SiC소재로 제작할 경우 성형용 코어의 수명향상, 렌즈 생산원가의 절감 및 코팅 과정의 간소화 등의 다양한 장점을 가지므로 SiC를 이용한 성형용 코어의 나노 정밀도급 초정밀 연삭가공기술의 개발이 필요하다. 본 논문에서는 3 메가픽셀, 2.5배 광학 줌 카메라폰 모듈용 비구면 Glass렌즈 개발을 목적으로 실험계획법을 적용하여 초경합금 성형용 코어의 연삭조건을 규명하였다. 초경합금 비구면 성형용 코어의 초정밀 연삭가공조건 및 결과를 바탕으로 난삭재인 Silicon Cabide(SiC)의 연삭가공조건을 구하고 이를 이용하여 비구면 Glass렌즈 성형용 코어를 초정밀 연삭가공하였다.

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캔드타입 전동워터펌프용 수중베어링의 특성분석 (Characteristic Analysis of Underwater Bearing for Canned-Type Electric Water Pump)

  • 박인겸;김형진;홍남표;서영호;김병희
    • 한국생산제조학회지
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    • 제23권2호
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    • pp.186-193
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    • 2014
  • This paper presents characteristic analysis of underwater bearing for canned type electric water pump. Characteristic analysis of underwater bearing was performed using self-developed performance tester, which capable of torque change, noise change, motor speed change and abrasion loss test with respect to temperature change of underwater bearing. The performance tester can be monitored in real time by designing the control unit using the Labview program. The performance experiment was performed through comparison of the silicon carbide (SIC) and the carbon bearing. From the experiment results, performance of SIC bearing was better than carbon bearing at the abrasion and temperature experiment.

A Study for the Homoepitaxial Growth of Single-crystalline 6H-SiCs.

  • Jang, Seong-Joo;Seol, Woon-Hag;Jeong, Moon-Taek
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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    • pp.269-274
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    • 1997
  • Silicon carbide(SiC) epilayers were grown by a thermal CVD(chemical vapor deposition) process, and their crystalline properties were investigated. Especially, the growth conditions of 6H-Sic homoepitaxial layers were obtained using a SiC-uncoated graphite susceptor that utilized Mo-plates. In order to investigate the crystallinity of grown layers, Nomarski photograph, transmittance, XRD, Raman, PL and TEM measurements were used. The best quality of 6H-SiC epilayers was obtained in conditions of growth temperature 1500$^{\circ}C$ and C/Si ratio 2.0.

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수송기계 엔진용 3C-SiC 마이크로 압력센서의 제작

  • 한기봉;정귀상
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2006년도 추계학술대회 발표 논문집
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    • pp.10-13
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    • 2006
  • This paper describes on the fabrication and characteristics of a 3C-SiC (Silicon Carbide) micro pressure sensor for harsh environment applications. The implemented micro pressure sensor used 3C-SiC thin-films heteroepitaxially grown on SOI (Si-on-insulator) structures. This sensor takes advantages of the good mechanical properties of Si as diaphragms fabricated by D-RIE technology and temperature properties of 3C-SiC piezoresistors. The fabricated pressure sensors were tasted at temperature up to $250^{\circ}C$ and indicated a sensitivity of 0.46 mV/V*bar at room temperature and 0.28 mV/V*bar at $250^{\circ}C$. The fabricated 3C-Sic/SOI pressure sensor presents a high-sensitivity and excel lent temperature stability.

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