• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.158-163
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• 2000

Six different SiC ceramics with SiO2-Re2O3 (Re=Yb, Er, Y, Dy, Gd, Sm) as sintering additives have been fabricated by hot-pressing the SiC-Re2Si2O7 compositions at 1850$^{\circ}C$ for 2 hr under a pressure of 25 MPa. The room temperature strneth and the fracture toughness of the hot-pressed ceramics were characterized and compared with those of the ceramics sintered with YAG (Y3Al5O12). Five SiC ceramics (Re=Yb, Er, Y, Dy, Gd) investigated herein showed sintered densities higher than 94% of theoretical. Tthe SiC-Re2Si2O7 compositions showed lower strength and comparable toughness to those from SiC-YAG composition, owing to the chemical reaction between SiO2 and SiC during sintering. SiC ceramics fabricated from a SiC-Y2Si2O7 composition showed the best mechanical properties of 490 MPa and 4.8 MPa$.$m1/2 among the compositions investigated herein.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.5
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• pp.499-506
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• 2019

This paper is concerned with the operating stability of 7kW inverter using SIC hybrid module and verifies the validity of the simulation results by comparing the result of the loss equation and the simulation result, Simulation results using Si module and SiC hybrid module are compared to compare switch loss and diode loss. Through the loss equation calculation, the conduction loss of SiC Hybrid module is 168W, switching loss is 9.3W, diode loss is 10.5nW, When compared with the simulation results, similar values were shown. As a result of comparing the simulation results of the Si module and the SiC Hybrid module, The total device loss of the Si module was 246.2W, and the total device loss of the SiC Hybrid module was 189.9W. The loss difference was 56.3W, which was about 0.8W. thereby verifying the reverse recovery characteristics of the SiC SBD. In addition, temperature saturation test was conducted to confirm the stability of SiC Hybrid module and Si module under high temperature saturation, In the case of the Si module, the output power was stopped at 4kW, and the SiC Hybrid module was confirmed to operate at 7kW. Based on this, an efficiency graph and a temperature graph are presented, and the Si module is graphed up to 4kW and the SiC Hybrid module is graphed up to 7kW.

• Journal of Magnetics
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• v.16 no.3
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• pp.211-215
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• 2011

The dynamic magnetostriction characteristics of an Fe-based nanocrystalline FeCuNbSiB alloy are investigated as a function of the dc bias magnetic field. The experimental results show that the piezomagnetic coefficient of FeCuNbSiB is about 2.1 times higher than that of Terfenol-D at the low dc magnetic bias $H_{dc}$ = 46 Oe. Moreover, FeCuNbSiB has a large resonant dynamic strain coefficient at quite low Hdc due to a high mechanical quality factor, which is 3-5 times greater than that of Terfenol-D at the same low $H_{dc}$. Based on such magnetostriction characteristics, we fabricate a new type of transducer with FeCuNbSiB/PZT-8/FeCuNbSiB. Its maximum resonant magnetoelectric voltage coefficient achieves ~10 V/Oe. The ME output power reaches 331.8 ${\mu}W$ at an optimum load resistance of 7 $k{\Omega}$ under 0.4 Oe ac magnetic field, which is 50 times higher than that of the previous ultrasonic-horn-substrate composite transducer and it decreases the size by nearly 86%. The performance indicate that the FeCuNbSiB/PZT-8/FeCuNbSiB transducer is promising for application in highly efficient magnetoelectric energy conversion.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.3
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• pp.41-47
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• 1999

Ion implanted GaAs MESFET with low resistive layer was fabricated using Si diffusion into GaAs from SiN. During the thermal annealing at 95$0^{\circ}C$ for 30s, Si diffused into ion implanted region of GaAs from SiN and they formed low resistive layer of 350$\AA$ thickness. The diffusion of Si decreased the sheet resistance of source and drain region from 1000$\Omega$/sq. to 400$\Omega$/sq. and the AuGe/Ni/Au ohmic contact resitivity from 2.5$\times$10sub -6$\Omega$-cmsup 2 to $1.5\times$10sup -6$\Omega$-cmsup 2. The fabricated lum gate length MESFET with Si diffused surface layer shows the transconductance of 360ms/mm, 8.5dB of associated gain and 3.57dB of minimum noise figure at 12GHz. These performances are better than that of MESFET without Si diffused layer.

• Journal of the Korean Ceramic Society
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• v.33 no.11
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• pp.1209-1216
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• 1996

MoSi2-Al2O3 composites were prepared by thermal explosion mode of self-propagating high temperature syn-thesis (SHS) using element powders of MoO3 Mo Si and Al. The combustion products of MoSi2 which have 10, 20, 30 and 40 wt% Al2O3 showed the molten state in the range of Mo to MoO3 6:1-9.5:1, 2:1-8:1, 1:1-5:1, and 1:1-3:1 (molar ratio) respectively. The combustion products which made least seperation the molten phase from the slag phase were in Mo/MoO3=9, 5:1, 8:1, 5:1 and 3:1 (molar ratio) respectively. Particles size of MoSi2 and Al2O3 in the combustion product were decreased as the molar ratio of Mo to MoO3 increase. By XRD analysis only MoSi2 and $\alpha$-Al2O3 peaks were identified in the combusion products, In case of MoSi2 containing 20wt% Al2O3 5.1wt% Al existed into MoSi2 grains and 30.7wt% Si and 7.7wt% Mo existed into Al2O3 grains. The relative density of MoSi2 containing 10, 20, 30 and 40 wt% Al2O3 were 82.7, 85.2, and 81.9% respectively. The fracture strength of MoSi2-Al2O3 composites increased with increasing Al2O3 and that of MoSi2-20wt% Al2O3 composite was 195 MPa.

• Solar Energy
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• v.11 no.3
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• pp.74-83
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• 1991

In this study, the (p)ZnTe/(n)Si solar cell and (n)CdS-(p)ZnTe/(n)Si poly-junction thin film are fabricated by vaccum deposition method at the substrate temperature of $200{\pm}1^{\circ}C$ and then their electrical properties are investigated and compared each other. The test results from the (p)ZnTe/(n)Si solar cell the (n)CdS-(p)ZnTe/(n)Si poly-junction thin fiim under the irradiation of solar energy $100[mW/cm^2]$ are as follows; Short circuit current$[mA/cm^2]$ (p)ZnTe/(n)Si:28 (n)CdS-(p)ZnTe/(n)Si:6.5 Open circuit voltage[mV] (p)ZnTe/(n)Si:450 (n)CdS-(p)ZnTe/(n)Si:250 Fill factor (p)ZnTe/(n)Si:0.65 (n)CdS-(p)ZnTe/(n)Si:0.27 Efficiency[%] (p)ZnTe/(n)Si:8.19 (n)CdS-(p)ZnTe/(n)Si:2.3 The thin film characteristics can be improved by annealing. But the (p)ZnTe/(n)Si solar cell are deteriorated at temperatures above $470^{\circ}C$ for annealing time longer than 15[min] and the (n)CdS-(p)ZnTe/(n)Si thin film are deteriorated at temperature about $580^{\circ}C$ for longer than 15[min]. It is found that the sheet resistance decreases with the increase of annealing temperature.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.7
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• pp.1777-1783
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• 2014

In this paper, we designed and fabricated a high-speed semiconductor sensor for use in power control devices and analyzed the characteristics with pulsed radiation tests. At first, radiation sensitive circular Si PIN diodes with various diameters(0.1 mm ~5.0 mm) were designed and fabricated using Si epitaxial wafer, which has a $42{\mu}m$ thick intrinsic layer. The reverse leakage current of the diode with a radius of 2 mm at a reverse bias of 30 V was about 20.4 nA. To investigate the characteristic responses of the developed diodes, the pulsed gamma-radiation tests were performed with the intensity of 4.88E8 rad(Si)/sec. From the test results showing that the output currents and the rising speeds have a linear relationship with the area of the sensors, we decided that the optimal condition took place at a 2 mm diameter. Next, for the selected 2 mm diodes, dose rate tests with a range of 2.47E8 rad(Si)/sec to 6.21E8 rad(Si)/sec were performed. From the results, which showed linear characteristics with the radiation intensity, a large amount of photocurrent over 60mA, and a high speed response under 350ns without saturation, we can conclude that the our developed PIN diode can be a good candidate for the sensor of power control devices.

• Journal of the Korean Ceramic Society
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• v.37 no.8
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• pp.805-810
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• 2000

The formation, microstructure and properties of MoSi2/SiC ceramic composites by polymer pyrolysis were investigated for the application of heating element material. Polymethylsiloxanes were mixed with Si, SiC, MoSi2 as filler and ceramic composites prepared by pyrolysis in N2 atmosphere at 1320~145$0^{\circ}C$ were studied. Dimensional change, density variation and phases were analyzed and correlated to the resulting material properties. Microstructures of ceramic composite prepared by polymer pyrolysis were composed of MoSi2, SiC and silicon oxycarbide glass matrix. Depending on the pyrolysis conditions, ceramic composites with a density of 86~90 TD%, a fracture strength of 213~284 MPa, a thermal expansion coefficient of 4~7$\times$10-6 were obtained. The electrical resistivity of the specimen decreased with increasing of temperature up to 50$0^{\circ}C$.

• Composites Research
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• v.15 no.1
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• pp.32-40
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• 2002

This study developed fabrication process of $SiC_p/Al$ metal matrix composites as electronic packaging materials by squeeze casting method. The $SiC_p$ preform were fabricated in newly designed preform mold using about 0.8 % of inorganic binder(SiO$_2$) and 5 vol.% of $Al_2O_3$fiber. To infiltrate the molten metal into the preform, fabrication condition such as the temperature and the pressure were selected. Applying the fabrication conditions, heat transfer analysis were preformed using finite element method and thus analyzed the temperature distribution and cooling characteristic during the squeeze casting. For the fabricated composites, impact toughness and thermal expansion coefficient were measured. The metal matrix composites developed in this study have 0.2~0.3 J impact toughness, $8~10 ppm/^{\circ}C$ thermal expansion coefficient and $2.9~3.0g/cm^3$density which is appropriate properties for electronic packaging application.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.35 no.2
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• pp.101-107
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• 2022

This study proposes the deconvolution method for the nanoindentation test results of geopolymer employing the Gaussian mixture model. Geopolymer has been studied extensively as an alternative construction material because it emits relatively lower CO₂ compared to ordinary Portland cement. Geopolymer is made of aluminosilicate and alkaline solution, and the Si/Al molar ratio affects its mechanical properties. Previous studies revealed that the Si/Al molar ratio of 1.8~2.0 results in the highest compressive strength, and the Si/Al molar ratio over 1.8 degrades the compressive strength of geopolymer severely; however the reason for the compressive strength degradation is still unclear. To understand the effect of the Si/Al molar ratio on the geopolymer structure, this study exploits the nanoindentation. The phase deconvolution of the indent modulus data is successful using the Gaussian mixture model, and it is observed that the Si/Al molar ratio alters the homogeneity of the geopolymer. Geopolymer becomes more homogeneous up to an Si/Al molar ratio of 1.8 at which geopolymer exhibits the highest compressive strength. The examination of this study is assumed to be adopted as evidence of strength degradation by the Si/Al ratio higher than the optimum value.