• Journal of Korean Vacuum Science & Technology
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• 제6권2호
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• pp.84-87
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• 2002

The Si$_{1-x}$ Gex/Si surface alloy (x = 0.3, 0.4 and 0.5), which are prepared by solid source MBE and have the SiGe epilayer thickness of 50$\AA$, are annealed with different parameters. The surface structure analyses of the heterostructure samples are made on a triple-axis X-ray diffractometer in grazing incidence X-ray diffraction (GIXRD) geometry. It has been found that with different annealing time (1.5h, 18h, 64h) and annealing temperature (550 $^{\circ}C$, 750 $^{\circ}C$), the SiGe epilayer experienced different strain relaxation process, which was deduced from the GIXRD measurements of the in-plane (220) diffraction peak of Si(001) substrate and the relevant (220) surface diffraction of SiGe epilayer. The results show that the stress relieving and the lateral strain relaxation in the SiGe/Si heterostructure can be promoted by correct annealing, which is very helpful for the preparation of SiGe/Si strained superlattice with fine strain crystallization..

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.58.1-58.1
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• 2010

We have developed a novel crystallization process, where the crystallization temperature is lowered compared to the conventional RTA process and the metal contamination is lowered compared to the conventional VIC process. A very-thin a-Si film was deposited and crystallized at $550^{\circ}C$ for 3 h by the VIC process and then a thick a-Si film was deposited and crystallized by the RTA process at $680^{\circ}C$ for 5 min using the VIC poly-Si layer as a crystallization seed layer. The RTA crystallized temperature could be lowered up to $50^{\circ}C$, compared to RTA process alone. The poly-Si film appeared a needle-like growth front and relatively well-arranged (111) orientation. In addition, the Ni concentration in the poly-Si film was lowered to $3{\times}10^{17}\;cm^{-3}$ and that at the poly-Si/$SiO_2$ interface was lowered to $5{\times}10^{19}\;cm^{-3}$. The reduction in metal contamination could be greatly helpful to achieve a low leakage current in poly-Si TFT, which is the critical parameter for commercialization of AMOLED.

• Bulletin of the Korean Chemical Society
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• 제28권4호
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• pp.533-537
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• 2007

This paper describes the heteroepitaxial growth of single-crystalline 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350 oC for micro/nanoelectromechanical system (M/NEMS) applications, in which hexamethyldisilane (HMDS, Si2(CH3)6) was used as a safe organosilane single-source precursor. The HMDS flow rate was 0.5 sccm and the H2 carrier gas flow rate was 2.5 slm. The HMDS flow rate was important in obtaing a mirror-like crystalline surface. The growth rate of the 3C-SiC film in this work was 4.3 μm/h. A 3C-SiC epitaxial film grown on the Si (100) substrate was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Raman scattering, respectively. These results show that the main chemical components of the grown film were single-crystalline 3C-SiC layers. The 3C-SiC film had a very good crystal quality without twins, defects or dislocations, and a very low residual stress.

• 한국세라믹학회지
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• 제46권5호
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• pp.484-487
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• 2009

$SiC_f$/SiC composites with whiskers and pyrolytic carbon (PyC) coated whiskers in the matrix were fabricated for enhancement of the fracture behaviors by the whisker growing assisted chemical vapor infiltration (WA-CVI) process, respectively. $SiC_f$/SiC composites were also prepared by the conventional CVI process as reference material. The mechanical properties and fracture behaviors were analyzed by comparison of the two types of composites prepared by WA-CVI and conventional CVI. The densities of $SiC_f$/SiC composites were in the range of $2.6{\sim}2.65g/cm^3$. The flexural strengths of composite with whiskers and with those coated by PyC were 650 MPa and 600 MPa, respectively. The tensile strength of composites with whiskers was ${\sim}285$ MPa.

• 한국세라믹학회지
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• 제46권5호
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• pp.447-451
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• 2009

Continuous SiC fiber-reinforced SiC composites ($SiC_f$/SiC) were fabricated by electrophoretic deposition (EPD). Nine types of slurries with different powder contents, binder resin amounts and slurry pH were deposited on Tyranno$^{TM}$-SA fabrics by EPD at 135 V for ten minutes to determine the optimal conditions. Further EPD using the optimum slurry conditions was performed on fabrics with four different pyrolitic carbon (PyC) thicknesses. The density of the hot-pressed composites decreased with increasing PyC thickness due to the difficulty of infiltrating the slurry into the narrow gaps between the fibers. On the other hand, the mechanical strength increased with increasing PyC thickness despite the decrease in density, which was explained by the enhanced crack deflection with increasing PyC thickness. The $SiC_f$/SiC composites showed the highest density and flexural strength of 94% and 342 MPa, respectively, showing EPD as a feasible method for dense $SiC_f$/SiC fabrication.

• 한국세라믹학회지
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• 제56권5호
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• pp.453-460
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• 2019

To reduce residual pores of composites and obtain a dense matrix, SiC_f/SiC composites were fabricated by chemical vapor deposition (CVI) using SiC nanorods. SiC nanorods were uniformly grown in the thickness direction of the composite preform when the reaction pressure was maintained at 50 torr or 100 torr at 1,100℃. When SiC nanorods were grown, the densities of the composites were 2.57 ~ 2.65 g/㎤, higher than that of the composite density of 2.47 g/㎤ for non-growing of SiC nanorods under the same conditions; grown nanorods had uniform microstructure with reduced large pores between bundles. The flexural strength, fracture toughness and thermal conductivity (room temperature) of the SiC nanorod grown composites were 412 ~ 432 MPa, 13.79 ~ 14.94 MPa·m^1/2 and 11.51 ~11.89 W/m·K, which were increases of 30%, 25%, and 25% compared to the untreated composite, respectively.

• 태양에너지
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• 제10권3호
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• pp.46-52
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• 1990

P층의 정공농도를 높이기 위하여 ${\delta}$-doped P층을 갖는 새로 구상된 a-Si 태양전지를 제작하였다. ${\delta}$-doped P층은 0.1-0.5 원자층의 박막 B층과 undoped a-Si의 여러층으로 구성되어 있다. B층은 광 CVD법과 열분해기법으로 증착시켰다. ${\delta}$-doped P층 박막에 대한 구조적, 광학적 및 전기적 특성을 FTIR, AES, SIMS등을 이용하여 평가하였다. 이 연구의 결과로서는 ${\delta}$-doped P층을 갖는 태양전지에 대하여 12.5%의 에너지변환효율을 달성하였다.

• 한국주조공학회지
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• 제25권5호
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• pp.216-220
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• 2005

High ductility Al-Mg alloys often contain some Mn and Si, however the effects of these minor alloying elements on various properties of alloys have not been fully understood. In this study the castability and mechanical properties of Al-5%Mg alloy were investigated according to the addition of Mn and Si. The fluidity of the alloys was generally increased by increasing Si or Mn contents. The feedability was also increased by increasing Si content, but it was rather decreased by increasing Mn content. Both the tensile strength and the ductility appeared to be deteriorated by Si addition, while they were found to be improved by Mn addition.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권6호
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• pp.697-705
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• 2014

A single chip Programmable AC to DC Power Converter, consisting of wide band gap SiC MOSFET and SiC diodes, has been proposed which converts high frequency ac voltage to a conditioned dc output voltage at user defined given power level. The converter has high conversion efficiency because of negligible reverse recovery current in SiC diode and SiC MOSFET. High frequency operation reduces the need of bigger size inductor. Lead inductors are enough to maintain current continuity. A complete electrical analysis, die area estimation and thermal analysis of the converter has been presented. It has been found that settling time and peak overshoot voltage across the device has reduced significantly when SiC devices are used with respect to Si devices. Reduction in peak overshoot also increases the converter efficiency. The total package substrate dimension of the converter circuit is only $5mm{\times}5mm$. Thermal analysis performed in the paper shows that these devices would be very useful for use as miniaturized power converters for load currents of up to 5-7 amp, keeping the package thermal conductivity limitation in mind. The converter is ideal for voltage requirements for sub-5 V level power supplies for high temperatures and space electronics systems.

• 센서학회지
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• 제17권4호
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• pp.256-260
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• 2008

This paper describes the mechanical properties of poly(polycrystalline) 3C-SiC thin films with various doping concentration, in which poly 3C-SiC thin fil's mechanical properties according to the n-doping concentration 1($9.2{\times}10^{15}cm^{-3}$), 3($5.2{\times}10^{17}cm^{-3}$), and 5%($6.8{\times}10^{17}cm^{-3}$) respectively were measured by nano indentation. In the case of $9.2{\times}10^{15}cm^{-3}n$-doping concentration, Young's modulus and hardness were obtained as 270 and 30 GPa, respectively. When the surface roughness according to n-doping concentrations was investigated by AFM(atomic force microscope), the roughness of poly 3C-SiC thin films doped by 5% concentration was 15 nm, which is also the best of them.