• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.367-372
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• 2000

ZnO thin films were deposited on amorphous slide glass and $SiO_2$/Si substrates by Facing Targets Sputtering method with sputtering current 0.1~0.8 A, working pressure 0.5~3 mTorr and substrate temperature R.T~$400^{\circ}C$. When the sputtering current was 0.4 A, working pressure was 0.5 mTorr and substrate temperature was 30$0^{\circ}C$, ${\Delta}{\Theta}_{50}$ value of ZnO/glass and ZnO/$SiO_2$/si thin film was $3.8^{\circ}$ and $2.98^{\circ}$, respectively. In these conditions, we knew that ZnO thin film were deposited with good c-axis orientation on amorphous slide glass by FTS system.

• Journal of Welding and Joining
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• v.29 no.5
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• pp.99-105
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• 2011

In this study, effect of Si content on nugget diameter in electric resistance spot welded dual-phase(DP) steel was investigated. The cold rolled DP steels with different Si content (0.5, 1.0, 1.5, 2.0 wt.%) were used and thickness of those sheet was 1.2mm. With increasing Si content, nugget diameter was increased at the same welding current. This is attributed to increase of heat input result from high resistivity. Also, nugget diameter was increased with an increase in Si content for the same heat input. For this reason, the melting point of DP steel is lowered with an increase in the Si content. And solid DP steel can easily be transformed to a liquid phase because the low melting point. Finally, a prediction formula for the nugget diameter(N.D.) could be obtained in terms of heat input(Q) and melting point(M.P) as follows: N.D.(mm) = 0.11Q(J) - 0.0031 M.P.($^{\circ}C$) + 0.32.

• Journal of Powder Materials
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• v.26 no.5
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• pp.415-420
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• 2019

SiAlON ceramics are used as ceramic cutting tools for heat-resistant super alloys (HRSAs) due to their excellent fracture toughness and thermal properties. They are manufactured from nitride and oxide raw materials. Mixtures of nitrides and oxides are densified via liquid phase sintering by using gas pressure sintering. Rare earth oxides, when used as sintering additives, affect the color and mechanical properties of SiAlON. Moreover, these sintering additives influence the cutting performance. In this study, we have prepared $Yb_{m/3}Si_{12-(m+n)}Al_{m+n}O_nN_{16-n}$ (m = 0.5; n = 0.5, 1.0) ceramics and manufactured SiAlON ceramics, which resulted in different colors. In addition, the characteristics of the sintered SiAlON ceramics such as fracture toughness and microstructure have been investigated and results of the cutting test have been analyzed.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.4
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• pp.51-56
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• 2012

In order to fabricate through-Si-vias for thermal vias by using wet etching process, anisotropic etching behavior of Si substrate was investigated as functions of concentration and temperature of TMAH solution in this study. The etching rate of 5 wt%, 10 wt%, and 25 wt% TMAH solutions, of which temperature was maintained at $80^{\circ}C$, was $0.76{\mu}m/min$, $0.75{\mu}m/min$, and $0.30{\mu}m/min$, respectively. With changing the temperature of 10 wt% TMAH solution to $20^{\circ}C$ and $50^{\circ}C$, the etching rate was reduced to $0.067{\mu}m/min$ and $0.233{\mu}m/min$, respectively. Through-Si-vias of $500{\mu}m$-depth could be fabricated by etching a Si substrate for 5 hours in 10 wt% TMAH solution at $80^{\circ}C$ after forming same via-pattern on each side of the Si substrate.

• Journal of Welding and Joining
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• v.35 no.2
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• pp.58-62
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• 2017

A319 aluminum alloy containing 6.5% Si and 3.5% Cu as major alloying elements has been widely used in machinery parts because of its excellent castability and crack resistance. However it needs more wear resistance to extend its usage to the severe wear environments. It has been known that hyper-eutectic Al-Si alloy having more than 12.6% Si contains pro-eutectic Si particles, which give better wear resistance and lubrication characteristics than hypo-eutectic Al-Si alloy like A319 alloy. In this study, it was tried to clad hyper-eutectic Al-Si alloy on the surface of A319 alloy. In the experiments, Al-36%Si alloy powder was mixed with organic binder to make a fluidic paste. The paste was screen-printed on the A319 alloy surface, melted by pulsed Nd:YAG laser and alloyed with the A319 base alloy. As experimental parameters, the average laser power was changed to 111 W, 202 W and 280 W. With increasing the average laser power, the melting depth was changed to $142{\mu}m$, $205{\mu}m$ and $245{\mu}m$, and the dilution rate to 67.2 %, 72.4 % and 75.7 %, and the Si content in the cladding layer to 16.2 %, 14.6 % and 13.7 %, respectively. The cross-section of the cladding layer showed very fine eutectic microstructure even though it was hyper-eutectic Al-Si alloy. This seems to be due to the rapid solidification of the melted spot by single laser pulse. The average hardness for the three cladding layers was HV175, which was much higher than HV96 of A319 base alloy. From the block-on-roll wear tests, A319 alloy had a wear loss of 5.8 mg, but the three cladding layers had an average wear loss of 3.5 mg, which meant that an increase of 40 % in wear resistance was obtained by laser cladding.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.261-266
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• 2010

In this paper, we report the changes of electrical, structural and optical characteristics in $Ge_2Sb_2Te_5$ thin films according to an increase of Si content. The Si-doped $Ge_2Sb_2Te_5$ thin films were prepared by rf-magnetron co-sputtering method. Isothermal annealing was carried out at $N_2$ atmosphere. The crystallization speed (v) of amorphous thin films was evaluated by detecting the reflection response signals using a nano-pulse scanner (wavelength = 658 nm) with illumination power of 1~17 mW and pulse duration of 10~460 ns. Structural phase changes were evaluated by XRD, and the optical transmittance was measured in the wavelength range of 300~3000 nm using UV-vis-NIR spectrophotometer. The sheet resistance (RS) of the thin films was measured using 4 point probe. Conclusivlely, the v-value decreased with an increase of Si content, while the RS-values of both crystalline and amorphous phases were increased. In particular, fcc-to-hexagonal transition was suppressed by the added Si atoms.

• Journal of Forest and Environmental Science
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• v.33 no.2
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• pp.105-112
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• 2017

The distribution and form of pine wood nematode (PWN) were investigated in Jinju-si and Sacheon-si areas, where infested with pine wilt disease (PWD). The average PWN population per g of the tubulation part in the wilted Japanese balck pine were 381.2 and 341 in Jinju-si and Sacheon-si, respectively. The PWN population per g of affected Japanese black pine with wilt rate below 60% were 556 and 518 in Jinju-si and Sacheon-si, respectively. The ratios of PWN and other plant-parasitic nematode in the wilted Japanse black pines were 48% vs. 52% in Jinju-si and 53% vs. 47% in Sacheon-si after exposure to PWD for 1 year. The survivorship of pine wood nematode in the sampled trees after 1 year was 0-10% in the Jinju-si area and 5-20% detected in the Sacheon-si area. In the forest areas affected by PWN, the highest survival rates were 37.2% and 39.8% at 25 cm diameter at breast height (DBH) in Jinju-si and Sacehon-si, respectively, while the highest wilt rates were 30.5% and 28.3% at 30 cm DBH in Jinju-si and Sacehon-si, respectively.

• Korean Journal of Materials Research
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• v.7 no.7
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• pp.587-591
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• 1997

RBS와 XRD를 이용하여 C o-Nb이중층 실리사이드와 구리 배선층간의 열적안정성에 관하여 조사하였다. Cu$_{3}$Si등의 구리 실리사이드는 열처리시 40$0^{\circ}C$정도에서 처음 형성되기 시작하였는데, 이 때 형성되는 구리 실리사이드는 기판의 상부에 존재하던 준안정한 CoSi의 분해시에 발생한 Si원자와의 반응에 의한 것이다. 한편, $600^{\circ}C$에서의 열처리 후에는 CoSi$_{2}$층을 확산.통과한 Cu원자와 기판 Si와의 반응에 의하여 CoSi$_{2}$/Si계면에도 구리 실리사이드가 성장하였는데, 이렇게 구리 실리사이드가 CoSi$_{2}$/Si 계면에 형성되는 것은 Cu원자의 확산속도가 여러 중간층에서 Si 원자의 확산속도 보다 더 빠르기 때문이다. 열처리 결과 최종적으로 얻어진 층구조는 CuNbO$_{3}$/Cu$_{3}$Si/Co-Nb합금층/Nb$_{2}$O$_{5}$CoSi$_{2}$/Cu$_{3}$Si/Si이었다. 여기서 상부에 형성된 CuNbO$_{3}$는 Cu원자가 Nb$_{2}$O$_{5}$및 Co-Nb합금층과 반응하여 기지조직의 입계에 석출되어 형성된 것이다.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.55.2-55
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• 1998

다견정 심리판-거l르마늄(JXlly-SiGe)은 TFT(thin-film transistor)와 갇븐 소자 응용에 있어서 중요한 불칠이다 .. LPCVD (low pressure chemical vapor deposition) 방법으로 비정칠 SiGc (a-SiGe) 박막올 증 착시키고 고상결정화(SPC: solid-phase crystallization)시켜 poly-SiGc옹 얻는 것은 잘 알려져 있다. 그러 나 그러나 PF'||'&'||'pound;VD-SPC 방법올 이용한 poly-SiGc의 제조에 대해서는 아직 두드러지게 연구된 바 없다. 우리단 PF'||'&'||'pound;VD 방법으로 a-SiGc 박막올 증착시키고 고상캘정화시켜 poly-SiGc올 얻었 R며, :~ 결정성, G Gc 농도, 결정핍의 평끌 크기 눔올 XRD (x-ray diffraction) 방법으호 조사하였다. 특히 pr'||'&'||'pound;VD 증착시 가판온도,Gc 함유량 등이 고상화에 미치는 영향에 대해서 조사하였다. P PECVD 장치는 터보펌프콸 사용하여 71저진공이 2xlOlongleftarrow5 Torr에 이르렀다. 가판윤 SiOOO) 웨이퍼륜 사용하고 기판 온도는 약 150- 35()"C 사이에서 변화되었다. 증착가스는 SiH4, GcH4, 112 등흘 썼다. 증착 압력과 r.f 전력용 각각 O.25ToIT와 3W로 일정하게 하였다 .. Gc 함유량(x)은 x x=O.O-O.5 사이에서 변화되었다 .. PECVD모 증착된 SiGc 박막들은 고상결정화를 위해 $\theta$X)"(:: Nz 분위기에서 24시간동안, 혹은 5OO'C에서 4열간 가열되었다. 고상결정화 후 poly-SiGc 박막은 SiGc(Ill), (220), (311) XRD 피크들올 보여주었으며, 각 피 크들은 poly-Si에 비하여 왼쪽으로 Bragg 각이 이동되었고, Vegard’slaw에 의해서 x의 값올 확 인할 수 있었다. 이것온 RBS 결과와 열치하였다. 약 150-350'C 사이에서 변화된 기판온도의 범위 에서 증착온도가 낮올수콕 견정립의 크기는 대체로 증가하는 것으로 나타났다 .. XHD로 추정된 형 균 결정립의 크기는 최대 약 3$\alpha$1m 정도였다. 또한 같끈 샘플뜰에 대해서 기판온도가 낮올수록 증착속도가 증가함옴 확인하였다 .. Gc 함유량이 x=O.1에서 x=O.5로 증가함에 따라서도 결정립의 크기와 SiGc 증착속도는 증가하는 것으로 나타났다 .. Hwang [1] , Kim[2] 둥의 연구자들은 Gc 함유 량이 증가함에 따라 결정 립 크기가 캄소하는 것올 보고하였으냐, Tsai [3] 둥은 반대의 결과플 보 고하고 Ge 힘유량의 증가시 결정립 크기의 증가에 대해 Gc의 Si보다 낮은 융점 (melting point) 올 강조한 바 있다. 결정립 크기의 증가는 대체로 SiGe 중착속도의 증가와도 관련이 있음올 볼 때, poly-SiGc의 경우에도 polv-Si의 고상화에서와 같이 증착속도가 빠를수록 최종적언 결정럽의 크기가 커지는 것으로 이해될 수도 있다 .. PECVD 증착시 증착속도의 증가는 증착된 박딱에서의 무켈서도를 증 가시킬 수 있음올 고려하면, 이라한 결파플온 p이y-SiGc의 고상결정화에서도 ploy-Si의 고상결정 화에서와 마찬가지로 초기 박막에서의 구조직 무절서도가 클수록, 고상결정화 후 결정 립의 크기 가 커칠 수 있음올 보여준다고 생각휠 수 있다,

• Korean Journal of Materials Research
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• v.10 no.2
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• pp.160-165
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• 2000

We have investigated the electrical and diffusion barrier properties of MgO produced on the surface of Cu (Mg) alloy. Also the diffusion barrier property of the interfacial MgO between Cu alloy and $SiO_2$ has been examined. The results show that the $150\;{\AA}$-MgO layer on the surface remains stable up to $700^{\circ}C$, preventing the interdiffusion of C Cu and Si in Si/MgO/Cu(Mg) structure. It also has the breakdown voltage of 4.5V and leakage current density of $10^{-7}A/\textrm{cm}^2/$. In addition, the combined structure of $Si_3N4(100{\AA})/MgO(100{\AA})$ increases the breakdown voltage up to lOV and reduces the leakage current density to $8{\tiems}10^{-7}A/\textrm{cm}^2$. Furthermore, the interfacial MgO formed by the chemical reac­t tion of Mg and $SiO_2$ reduces the diffusion of copper into $SiO_2$ substrate. Consequently, Cu(Mg) alloy can be applied as a g gate electrode in TFT /LCDs, reducing the process steps.