• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.278-278
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• 2009

A photovoltaic device consisting of arrays of radial p-n junction wires enables a decoupling of the requirements for light absorption and carrier extraction into orthogonal spatial directions. Each individual p-n junction wire in the cell is long in the direction of incident light, allowing for effective light absorption, but thin in orthogonal direction, allowing for effective carrier collection. To fabricate radial p-n junction solar cells, p or n-type vertical Si wire cores need to be produced. The majority of Si wires are produced by the vapor-liquid-solid (VLS) method. But contamination of the Si wires by metallic impurities such as Au, which is used for metal catalyst in the VLS technique, results in reduction of conversion efficiency of solar cells. To overcome impurity issue, top-down methods like noble metal catalytic etching is an excellent candidate. We used noble metal catalytic etching methods to make Si wire arrays. The used noble metal is two; Au and Pt. The method is noble metal deposition on photolithographycally defined Si surface by sputtering and then etching in various BOE and $H_2O_2$ solutions. The Si substrates were p-type ($10{\sim}20ohm{\cdot}cm$). The areas that noble metal was not deposited due to photo resist covering were not etched in noble metal catalytic etching. The Si wires of several tens of ${\mu}m$ in height were formed in uncovered areas by photo resist. The side surface of Si wires was very rough. When the distance of Si wires is longer than diameter of that Si nanowires are formed between Si wires. Theses Si nanowires can be removed by immersing the specimen in KOH solution. The optimum noble metal thickness exists for Si wires fabrication. The thicker or the thinner noble metal than the optimum thickness could not show well defined Si wire arrays. The solution composition observed in the highest etching rate was BOE(16.3ml)/$H_2O_2$(0.44M) in Au assisted chemical etching method. The morphology difference was compared between Au and Pt metal assisted chemical etching. The efficiencies of radial p-n junction solar Cells made of the Si wire arrays were also measured.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.859-860
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• 2006

TiC-$TiB_2$-SiC system was a ternary eutectic, whose eutectic composition was 34TiC-$22TiB_2$-44SiC (mol%). TiC-$TiB_2$-SiC ternary eutectic composite were synthesized by a floating zone method using TiC, $TiB_2$ and SiC powders as starting materials. The TiC-$TiB_2$-SiC eutectic composite showed a lamellar texture. TiC(022), $TiB_2(010)$ and SiC(111) of the eutectic composite were perpendicular to the growth direction. TiC-$TiB_2$-SiC ternary eutectic composite had specific relationship among the crystal planes: TiC[011]//$TiB_2[010]$//SiC[112], TiC(200)//$TiB_2$(001)//SiC(402) and $TiC(1\bar{1}1)$//$TiB_2(101)$//SiC(220).

• Journal of the Korean Ceramic Society
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• v.56 no.5
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• pp.453-460
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• 2019

To reduce residual pores of composites and obtain a dense matrix, SiC_f/SiC composites were fabricated by chemical vapor deposition (CVI) using SiC nanorods. SiC nanorods were uniformly grown in the thickness direction of the composite preform when the reaction pressure was maintained at 50 torr or 100 torr at 1,100℃. When SiC nanorods were grown, the densities of the composites were 2.57 ~ 2.65 g/㎤, higher than that of the composite density of 2.47 g/㎤ for non-growing of SiC nanorods under the same conditions; grown nanorods had uniform microstructure with reduced large pores between bundles. The flexural strength, fracture toughness and thermal conductivity (room temperature) of the SiC nanorod grown composites were 412 ~ 432 MPa, 13.79 ~ 14.94 MPa·m^1/2 and 11.51 ~11.89 W/m·K, which were increases of 30%, 25%, and 25% compared to the untreated composite, respectively.

• Korean Journal of Metals and Materials
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• v.46 no.12
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• pp.830-834
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• 2008

NiSi is currently being employed in 45 nm CMOS devices as a contact material. We employed a first principles calculation to understand the movements of atoms when Co, Pd, and Pt were added to tetragonal-NiSi on Si (001). The Ni atoms in the tetragonal-NiSi/Si (001) favored away from the original positions along positive c-direction in a systematic way during the energy minimization. Two different Ni sites were identified at the interface and the bulk, respectively. The Ni site at the interface farther away from the interface was more favorable for Pd and Pt substitution. Co, however, prafered the bulk site to the interface site, unlike Pd and Pt.

• Nuclear Engineering and Technology
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• v.56 no.3
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• pp.846-854
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• 2024

FEMAXI-ATF is being developed for fuel performance modeling of SiC cladded UO2 fuel with focuses on modeling pellet-cladding mechanical interactions (PCMI). The code considers probability distributions of mechanical strengths of monolithic SiC (mSiC) and SiC fiber reinforced SiC matrix composite (SiC/SiC), while it models pseudo-ductility of SiC/SiC and propagation of cladding failures across the wall thickness direction in deterministic manner without explicitly modeling cracks based on finite element method in one-dimensional geometry. Some hypothetical BWR power ramp conditions were used to test sensitivities of different model parameters on the analyzed PCMI behavior. The results showed that propagation of the cladding failure could be modeled by appropriately reducing modulus of elasticities of the failed wall element, so that the mechanical load of the failed element could be re-distributed to other intact elements. The probability threshold for determination of the wall element failure did not have large influence on the predicted power at failure when the threshold was varied between 25 % and 75 %. The current study is still limited with respect to mechanistic modeling of SiC failure as it only models the propagation of the cladding wall element failure across the homogeneous continuum wall without considering generations and propagations of cracks.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.123-133
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• 1998

Amorphous silicon (a-Si) was crystallized by metal induced crystallization using metal solution. The a-Si films spin coated with a 50,000 ppm Ni solution were crystallized at as low as $500^{\circ}C$. Needlelike morphology, developed as a result of the migration of $NiSi_2$, precipitates, appears in the MIC poly-Si. The growth of the needlelike crystallites proceeds to a direction parallel to (111). The crystallization temperature can be lowered to $450^{\circ}C$ by Au addition. The enhancement of crystallization results from the decrease of interfacial energy at the NiSi2/Si interface by Au addition.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1475-1477
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• 2001

In odor to set high saturation magnetization and coercivity, it had need to orient axis of easy magnetization of CoCr-based thin film perpendicular direction(c-axis) to the substrate plane. It was known that crystalline orientation of CoCr-based thin film was improved by introducing underlayer like Ti, Ge. We prepared singlelayer and double layer with Si underlayer by Facing Targets Sputtering System. As a result, intensity and c-axis dispersion angle ${\Delta}{\theta}_{50}$ of singlelayer were improved with increasing film thickness. Also, it was found that CoCr/Si and CoCrTa/Si double layer showed good c-axis dispersion angle due to introducing Si.

• Elastomers and Composites
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• v.32 no.3
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• pp.179-185
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• 1997

In solution and melting state, SiOD prepolymer was prepared by cured excess DDM with epoxy-terminated siloxane oligomers to control phase separation when DGEBA was blended with PDMS. DGEBA/SiOD prepolymer was also cured at $150^{\circ}C$ for 3hrs. Mechanical and thermal properties of the cured prepolymer specimen were investigated. DGEBA/SiOD60 specimen blended SiOD prepolymer had the best flexural strength, modulus and impact strength. To show crack-formation procedure to morphology, DGEBA/DDM neat specimen was flowed homogeneously in direction of crack energy, whereas DGEBA/SiOD$(30{\sim}60)$ specimen showed heterogeneously dispersed particles and scattered domain of crack energy, but DGEBA/SiOT specimen showed homogeneous phase.

• Journal of Powder Materials
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• v.9 no.1
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• pp.11-18
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• 2002

The 6061 Al alloy based composites reinforced with 10 vol% SiC whiskers were prepared by powder metallurgy with the powders having the different sizes, i.e. < $30{\mu}m$ and > $30{\mu}m$ The composites were subjected to equal channel angular pressing (ECAP) at various conditions and the microstructural changes during ECAP were examined In the composites SiC whiskers were clustered and randomly aligned. The clusters were relatively well distributed in the composite with the smaller initial powder size. After ECAP, the clusters were aligned parallel to flow direction and became smaller. In addition, the shape of clusters was changed from irregular to round. The microstructure of the ECAPed samples were compared with those of the conventionally hot-extruded composites. The uniform microstructure and enhanced microhardness could be obtained by using the powders having the smaller size, decreasing ECAP temperature and repeating ECAP.

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.166-171
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• 1997

The photomachinable glass-ceramics of Ag and CeO$_{2}$ added to Li$_{2}$O-Al$_{2}$O$_{3}$-SiO$_{2}$-K$_{2}$O glass system was investigated as a function of UV irradiation time. The temperature of optimum nucleation and crystal growth temperature were confirmed at 525.deg. C, 630.deg. C respectively using DTA and TMA. The phases of Li$_{2}$O.SiO$_{2}$ habit were lath-like and/or dendrite type and [002] direction of Li$_{2}$O.SiO$_{2}$ / Li$_{2}$O.2SiO$_{2}$ phases were changed according to the UV irradiation time by 400 W, 362 nm UV light source. Under that condition, the optimum UV irradiation time was 5 min.