• 전기의세계
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• 제23권6호
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• pp.49-55
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• 1974

Amorphous semiconductor from As 30 Te 48 Ge 10 Si 12 was prepared, and studied electron microscopy, X-ray analysis and resistivity measurement. It's resistivity is 1.56*10$^{6}$ .ohm.-cm when small ampule is used for preparing sample it is found that no phase separation has occurced by electron microscopy, and that phase transition temperature is 232.deg. C by differential Thermal Analysis. The specimen showed threshold switching that the low resistance state occur at critical electric field and the resistance recover at low applied field. Critical electric field of the switching is 10$^{5}$ V/cm at room temperature. Threshold voltage secreace exponentially with increasing ambient temperature and at that each voltage resistance of the switching device increase exponentially. According to the series resistance and applied vottage current slope on the V-I curve is varied. When applied voltage is decreased after switching, the resistance of the switching device is increased. By this result the origin of the switching is the Joule's heating.

• Bulletin of the Korean Chemical Society
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• 제29권9호
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• pp.1752-1754
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• 2008

A simple and efficient synthesis of 3,4-dihydropyrimidinones or thiones is described, using silica-supported perchloric acid ($HClO_4-SiO_2$) as a heterogeneous catalyst from an aldehyde, $\beta$-dicarbonyl compound, and urea or thiourea under solvent-free conditions. Compared to the classical Biginelli reactions, this method consistently has the advantage of high yields, short reaction time, easy separation, and tolerance towards various functional groups.

• 통합자연과학논문집
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• 제15권1호
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• pp.19-25
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• 2022

The diarylsilyl compound, C₁₄H₁₂Br₄Si, was prepared from the reaction of 3,5-dibromophenyllithium with dimethyldichlorosilane, (CH₃)₂SiCl₂, at -78 ℃, can be a good synthon for derivatization to produce efficient host materials for organic light emitting diodes (OLEDs). Crystal structure analysis shows a slight deviation from ideal tetrahedral symmetry around the Si atom, whose conformation is effective in ensuring the maximum separation of the two phenyl rings and the two methyl substituents. The directions of the two aromatic rings are almost perpendicular to each other. The molecule exists as a monomer in the solid state.

• 자원리싸이클링
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• 제21권5호
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• pp.31-37
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• 2012

실리콘 웨이퍼공정에서 발생하는 실리콘 슬러지로부터 실리콘 및 탄화규소를 분리한 다음, 전해법으로 원소형태의 실리콘을 회수하는 연구를 수행하였다. 실리콘 슬러지의 주요 불순물은 절삭유, 금속불순물, 실리콘 및 실리콘 카바이드를 들 수 있다. 기계적 선별법으로 분리한 실리콘, 탄화실리콘 복합물을 $1000^{\circ}C$에 1시간동안 염화 배소하여 응축하고 회수한 사염화실리콘을 이온성액체인 $[Bmpy]Tf_2N$에 용해하여 전해액으로 사용하였다. 순환전위법으로부터 $[Bmpy]Tf_2N$의 안정한 전압구간과 사염화실리콘을 용해한 $[Bmpy]Tf_2N$ 전해액에서 실리콘의 환원으로 추정되는 환원피크를 얻을 수 있었다. 정전위법(-1.9 V vs. Pt-QRE)에서 1시간동안 금 전극 상에 전해한 다음, 전극표면을 XRD, SEM-EDS 및 XPS 분석을 통하여 실리콘이 원소형태로 전착되었음을 확인하였으며, 미량의 산소가 검출되는 것은 분석과정에서 시편이 공기 중에 노출되었기 때문으로 판단된다.

• 대한화학회지
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• 제17권6호
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• pp.428-433
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• 1973

음이온교환수지관(Dowex 1${\times}8,\;20cm{\times}3.14cm^2$)을 통하여 0.1M Si(IV), As(V), P(V), S(VI), W(VI), Cr(VI)의 용액을 각기 1ml씩 취하여 섞은 용액 6ml를 다음과 같은 용리액으로 용리시켜 정량적으로 분리하였다. 이때에 용리액은 Si(IV), As(V), P(V)에 대하여 0.07M 염산과 0.03M 염화나트륨을 섞은 용액(pH 1.3)을, S(VI), W(VI), Cr(VI)에 대하여 0.6M 염화나트륨과 0.3M 수산화나트륨을 섞은 용액을 사용하였다. 이때에 함께 용출된 P(V)와 As(V)의 혼합액은 아황산나트륨용액으로 처리하여 As(V)를 As(III)으로 환원시킨다음 0.1N 아황산나트륨용액(pH 3.48)으로 용리하여 분리하였다. 많은 양의 철(97% 이상)과 Si(IV), As(V), S(VI), P(V), W(VI)이 혼합된 용액은 양이온교환수지관(Dowex 50w${\times}12,\;30cm{\times}3.14cm^2$)을 통하여 디메틸술포옥시드와 질산나트륨의 혼합용리액으로 용리하여 철을 먼저 분리하고 다시 음이온들은 음이온교환수지관을 통하여 분리하였다. 철강중에 들어있는 음이온 성분들도 같은 방법으로 분리할 수 있었다.

• 자원리싸이클링
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• 제25권1호
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• pp.40-47
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• 2016

니켈 산화광인 라테라이트광은 건식제련 원료인 사프로라이트광과 습식제련 원료인 리모나이트광으로 구성되어 있다. 사프로라이트광이 혼재된 리모나이트광을 습식제련용으로 사용할 경우 무기산 소모량이 증가할 뿐만 아니라 슬러지 발생량이 증가하여 공정비용을 증가시키는 단점이 발생한다. 이러한 이유로 니켈 리모나이트광은 Si+Mg함량 10% 이하, Fe 함량 40% 이상이어야 습식제련 원료로 사용하기 적합하다. 본 연구에서는 뉴칼레도니아산 니켈 라테라이트광을 대상으로 습식제련 원료인 리모나이트광을 분리선별하는 연구를 수행하였다. 뉴칼레도니아산 니켈라테라이트광의 입도에 따른 광물성분 및 화학성분 변화를 규명하여 분급에 의한 사프로라이트 및 리모나이트의 광물간 분리선별 가능성을 확인하였다. 뉴칼레도니아산 니켈 라테라이트 원광(함수율 23.0%) 및 니켈 라테라이트 건조광(함수율 9.1%)을 핀밀을 이용 해쇄한 후 건식분급한 결과, 니켈 라테라이트광을 함수율 9% 수준으로 건조할 경우 분급효율이 높아지는 것을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.191.2-191.2
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• 2015

Details of carrier dynamics in self-assembled quantum dots (QDs) with a particular attention to nonradiative processes are not only interesting for fundamental physics, but it is also relevant to performance of optoelectronic devices and the exploitation of nanocrystals in practical applications. In general, the possible processes in such systems can be considered as radiative relaxation, carrier transfer between dots of different dimensions, Auger nonradiactive scattering, thermal escape from the dot, and trapping in surface and/or defects states. Authors of recent studies have proposed a mechanism for the carrier dynamics of time-resolved photoluminescence CdTe (a type II-VI QDs) systems. This mechanism involves the activation of phonons mediated by electron-phonon interactions. Confinement of both electrons and holes is strongly dependent on the thermal escape process, which can include multi-longitudinal optical phonon absorption resulting from carriers trapped in QD surface defects. Furthermore, the discrete quantized energies in the QD density of states (1S, 2S, 1P, etc.) arise mainly from ${\delta}$-functions in the QDs, which are related to different orbitals. Multiple discrete transitions between well separated energy states may play a critical role in carrier dynamics at low temperature when the thermal escape processes is not available. The decay time in QD structures slightly increases with temperature due to the redistribution of the QDs into discrete levels. Among II-VI QDs, wide-gap CdZnTe QD structures characterized by large excitonic binding energies are of great interest because of their potential use in optoelectronic devices that operate in the green spectral range. Furthermore, CdZnTe layers have emerged as excellent candidates for possible fabrication of ferroelectric non-volatile flash memory. In this study, we investigated the optical properties of CdZnTe/ZnTe QDs on Si substrate grown using molecular beam epitaxy. Time-resolved and temperature-dependent PL measurements were carried out in order to investigate the temperature-dependent carrier dynamics and the activation energy of CdZnTe/ZnTe QDs on Si substrate.

• Nuclear Engineering and Technology
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• 제52권2호
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• pp.279-286
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• 2020

In this article, we develop a reactive distillation (RD) column configuration for the production of hydrogen. This RD column is in the HI decomposition section of the sulphur - iodine (SI) thermochemical cycle, in which HI decomposition and H₂ separation take place simultaneously. The section plays a major role in high hydrogen production efficiency (that depends on reaction conversion and separation efficiency) of the SI cycle. In the column simulation, the rigorous thermodynamic phase equilibrium and reaction kinetic model are used. The tuning parameters involved in phase equilibrium model are dependent on interactive components and system temperature. For kinetic model, parameter values are adopted from the Aspen flowsheet simulator. Interestingly, there is no side reaction (e.g., solvation reaction, electrolyte decomposition and polyiodide formation) considered aiming to make the proposed model simple that leads to a challenging prediction. The process parameters are determined on the basis of optimal hydrogen production as reflux ratio = 0.87, total number of stages = 19 and feeding point at 8th stage. With this, the column operates at a reasonably low pressure (i.e., 8 bar) and produces hydrogen in the distillate with a desired composition (H₂ = 9.18 mol%, H₂O = 88.27 mol% and HI = 2.54 mol%). Finally, the results are compared with other model simulations. It is observed that the proposed scheme leads to consume a reasonably low energy requirement of 327 MJ/kmol of H₂.

• 멤브레인
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• 제20권3호
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• pp.210-216
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• 2010

IS (요오드-황)프로세스의 HI 분해반응 공정에서의 적용을 목적으로 지르코니아 코팅 지지체를 이용하여 CVD법에 의해 수소분리막을 제작하였으며, 분리막으로서의 가능성을 평가하였다. 제작한 막의 형상 및 Si의 분포를 파악하기 위해 SEM 및 EPMA를 이용하여 분석하였다. 지르코니아를 코팅한 지지체를 이용하여 제작한 막에 Zr-Si-O층이 존재한다는 것을 알 수 있었다. 제작한 막의 수소와 질소가스의 단일 성분 투과속도를 $300{\sim}600^{\circ}C$에서 측정하였다. $600^{\circ}C$에서 Z-1막에서의 수소투과속도는 $1{\times}10^{-7}\;mol{\cdot}Pa^{-1}{\cdot}m^{-2}{\cdot}s^{-1}$를 나타냈다. 질소에 대한 수소의 선택성은 Z-1 막에서 5.0, Z-2막에서 5.75를 나타냈다.

• 공학기술논문지
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• 제4권4호
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• pp.431-436
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• 2011

This study was carried out to reduce the problem during distillation process, which separate U, TRU (TRans Uranium) metal electro deposit, Cd and LiCl-KCl eutectic salt generating from LCC (Liquid Cadmium Cathode) electro winning process. The cadmium recovering apparatus was manufactured to separate for each metal using solid-liquid separation method. The apparatus consists of the first sieve for the separation of U and TRU metal electrodeposit, the second sieve for the separation of LiCl-KCl eutectic salt, cadmium collection basket, and a heating furnace. In addition, the size of each sieve is 2 mm to 3 mm. In this experiment, a metal wire was employed to replace TRU metal electrodeposit and U, which exist actually in a LCC crucible. In the solid state, The LiCl-KCl is separated at 340℃ at which the solid and the liquid of the remaining cadmium and LiCl-KCl eutectic salt coexists in each, after the metal wire separated at 500℃. As a result, it seems that it would be beneficial to set the processing condition in the distillation process with the additional treatment process of cadmium and LiCl-KCl eutectic salt.