• Title/Summary/Keyword: SI 방향

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Advances in Power Semiconductor Devices for Automotive Power Inverters: SiC and GaN (전기자동차 파워 인버터용 전력반도체 소자의 발전: SiC 및 GaN)

  • Dongjin Kim;Junghwan Bang;Min-Su Kim
    • Journal of the Microelectronics and Packaging Society
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    • v.30 no.2
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    • pp.43-51
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    • 2023
  • In this paper, we introduce the development trends of power devices which is the key component for power conversion system in electric vehicles, and discuss the characteristics of the next-generation wide-bandgap (WBG) power devices. We provide an overview of the characteristics of the present mainstream Si insulated gate bipolar transistor (IGBT) devices and technology roadmap of Si IGBT by different manufacturers. Next, recent progress and advantages of SiC metal-oxide-semiconductor field-effect transistor (MOSFET) which are the most important unipolar devices, is described compared with conventional Si IGBT. Furthermore, due to the limitations of the current GaN power device technology, the issues encountered in applying the power conversion module for electric vehicles were described.

Printer용 a-Si:H 감광체의 연구동향

  • 양홍근
    • 전기의세계
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    • v.36 no.1
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    • pp.28-35
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    • 1987
  • 본고에서는 laser printer의 여러구성부분 중 화질과 직접 관련된 감광체재료의 부분에 촛점을 두는 한편 새로운 재료의 응용으로서 다양한 실험과 개선을 하고 있는 반도체 laser printer용 a-Si:H감광체의 기술동향과 문제점을 살펴보고 향후 개발방향을 기술하였다.

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Analysis of the Movement of Surgical Clips Implanted in Tumor Bed during Normal Breathing for Breast Cancer Patients (유방암 환자의 정상 호흡에서 종양에 삽입된 외과적 클립의 움직임 분석)

  • Lee, Re-Na;Chung, Eun-Ah;Suh, Hyun-Suk;Lee, Kyung-Ja;Lee, Ji-Hye
    • Radiation Oncology Journal
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    • v.24 no.3
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    • pp.192-200
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    • 2006
  • [ $\underline{Purpose}$ ]: To evaluate the movement of surgical clips implanted in breast tumor bed during normal breathing. $\underline{Materials\;and\;Methods}$: Seven patients receiving breast post-operative radiotherapy were selected for this study. Each patient was simulated in a common treatment position. Fluoroscopic images were recorded every 0.033 s, 30 frames per 1 second, for 10 seconds in anterior to posterior (AP), lateral, and tangential direction except one patient's images which were recorded as a rate of 15 frames per second. The movement of surgical clips was recorded and measured, thereby calculated maximal displacement of each clip in AP, lateral, tangential, and superior to inferior (SI) direction. For the comparison, we also measured the movement of diaphragm in SI direction. $\underline{Results}$: From AP direction's images, average movement of surgical clips in lateral and SI direction was $0.8{\pm}0.5\;mm$ and $0.9{\pm}0.2\;mm$ and maximal movement was 1.9 mm and 1.2 mm. Surgical clips in lateral direction's images were averagely moved $1.3{\pm}0.7\;mm$ and $1.3{\pm}0.5\;mm$ in AP and SI direction with 2.6 mm and 2.6 mm maximal movement in each direction. In tangential direction's images, average movement of surgical clips and maximal movement was $1.2{\pm}0.5\;mm$ and 2.4 mm in tangential direction and $0.9{\pm}0.4\;mm$ and 1.7 mm in SI direction. Diaphragm was averagely moved $14.0{\pm}2.4\;mm$ and 18.8 mm maximally in SI direction. $\underline{Conclusion}$: The movement of clips caused by breathing was not as significant as the movement of diaphragm. And all surgical clip movements were within 3 mm in all directions. These results suggest that for breast radiotherapy, it may not necessary to use breath-holding technique or devices to control breath.

Growth of SiC film on SiNx/Si Structure (SiNx/Si 구조를 이용한 SiC 박막성장)

  • Kim, Gwang-Cheol;Park, Chan-Il;Nam, Gi-Seok;Im, Gi-Yeong
    • Korean Journal of Materials Research
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    • v.10 no.4
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    • pp.276-281
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    • 2000
  • Silicon carbide(SiC) films were grown on modified Si(111) surface with a SiNx in the NH$_3$surrounding. Thickness of SiC films was decreased with increasing of the nitridation time. Also, voids having crystal defects were removed at interface of SiC/Si according to growth parameters. SiC films were grown on SiNx/Si substrate of 100, 300 and 500nm thickness. SiC films were deposited along [111] direction and columnar grains of SiC crystal. The void-free film was observed in the interface of SiC/SiNx. This result suggests that fabrication of SiC devices are applied to SiNx replacing silicon oxide in SOI structure.

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High Temperature Combustion Behavior of Carbon/Carbon Composites Coated with SiC (탄화규소로 도포된 탄소/탄소 복합재의 고온 연소거동)

  • Choi, Don-Mook;Kim, Joung-Il
    • Journal of the Korean Society of Hazard Mitigation
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    • v.1 no.1 s.1
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    • pp.127-138
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    • 2001
  • Although Carbon/Carbon Composites(CFRCs) have excellent mechanical properties at high temperature, the disadvantage of combustion in air restricts their applications. Thus a lot of investments have been studied to improve the drawback of CFRCs. In this study, SiC used as a thermal protective coating material possesses almost the same expansion coefficient compared to that of carbon, so SiC was coated on 4D (directional) CFRCs by Pack-Cementation process. For the 4D CFRCs coated with SiC, optical microscopy observations were performed to estimate the coating mechanism involved and TGA tests were also performed to evaluate the improvement of combustion resistance. And their high temperature combustion properties were investigated by the arc torch plasma test. From the results, it is found that the mechanical properties and high temperature combustion properties of the 4D(directional) CFRCs coated with SiC were much better than bare 4D CFRCs.

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