• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.12
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• pp.417-425
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• 2020

Recently, the development of weapons systems in conjunction with the Fourth Industrial Revolution has increased the number of weapon systems that integrate individual commercial systems by actively incorporating the superior fields of private commercial technologies. In the case of such commercial product-based weapons systems, however, the development of ILS elements across all areas, such as technical manual, military field maintenance support equipment, interactive electronic technical manual (IETM), and Computer Based Training (CBT) development, and weapons system Reliability, Availability, Maintainability(RAM) target values, and logistics support analysis (LSA) was requested to expand the level of development by developers. The commercial product-based System Integration (SI) weapon system will be able to complete the comprehensive military balance for complementing and effective maintenance of the military and developers only when the ILS development, which is limited to the essential elements of the required group, Request For Proposal (RFP) and Post-Logistics Support (PLS) directions were applied in the framework of outsourcing maintenance implementation. As a result, by checking the operation status of current weapons systems, the logistics support of commercial product-based weapon systems selected outsourcing as the basic policy that is decided based on the development requirements, focusing on maintaining operation through a rational decision-making process, and presented a plan for applying the development plan to the RFP for the determined core elements and PLS.

• Journal of Information Technology Services
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• v.12 no.2
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• pp.387-410
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• 2013

Due to the development of information technology, Convergence and Creative Economy became hot issues. For example, products become more intelligent and services are likely to be connected and integrated around core services or provided as bundle solution. Meanwhile products and services are integrated in the context of mutual supplementation, which leads to Servitization of Products and Productization of Services in many industries. Previous studies have addressed Convergence with different terms and definitions such as Convergent, Multicategory Multifunctional Product, Clouding Service, Bundle and so on from one perspective such as consumers, suppliers or technology according to a wide range of academic approaches. Thus, this study attempted to suggest the most typical convergence products released in the convergence environment and categorize those products. Furthermore, this study has pointed out the problems in the New Product Development Framework discussed in the studies on marketing by taking the situation of the public sector into account and then suggested "New Service Development Framework in the Public Sector" that are different from traditional e-Gov. approach basically and will enable the government to create public information service and provide them to enterprises or citizens. It also emphasized the importance of Business Conceptualization Stage in the framework; argued that there is a necessity of an integrative study from the perspective of technology on the basis of the approach from the perspective of marketing and Policy such as a study of consumer behaviors, design and marketing channel and Policy Integration for the development and dissipation; and furthermore suggested the cases-the development/Diffusion of Transportation Card Service in Seoul and CFC (Call for Collaboration) in Singapore-in order to verify the framework. There is a need to supplement New Service Development Framework so it is able to reflect the distinct characteristics of the public sector from the academic perspective and be used as practical guidelines for SI (System Integration) business to shift into IT Service business. Last but not the least, this study has suggested the limitations and the directions for the future studies.

• 한국신재생에너지학회:학술대회논문집
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• 2007.11a
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• pp.281-284
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• 2007

Recently, we have developed p-i-n a-Si:H single junction thin film solar cells with RF (13.56MHz) plasma enhanced chemical vapor deposition (PECVD) system, and also successfully fabricated the mini modules ($>300cm^2$), using the laser patterning technique to form an integrated series connection. The efficiency of a mini module was 7.4% ($Area=305cm^2$, Isc=0.25A, Voc=14.74V, FF=62%). To fabricate large area modules, it is important to optimise the integrated series connection, without damaging the cell. We have newly installed the laser patterning equipment that consists of two different lasers, $SHG-YVO_4$ (${\lambda}=0.532{\mu}m$) and YAG (${\lambda}=1.064{\mu}m$). The mini-modules are formed through several scribed lines such as pattern-l (front TCO), pattern-2 (PV layers) and pattern-3 (BR/back contact). However, in the case of pattern-3, a high-energy part of laser shot damaged the textured surface of the front TCO, so that the resistance between the each cells decreases due to an incomplete isolation. In this study, the re-deposition of SnOx from the front TCO, Zn (BR layer) and Al (back contact) on the sidewalls of pattern-3 scribed lines was observed. Moreover, re-crystallization of a-Si:H layers due to thermal damage by laser patterning was evaluated. These cause an increase of a leakage current, result in a low efficiency of module. To optimize a-Si:H single junction thin film modules, a laser beam profile was changed, and its effect on isolation of scribed lines is discussed in this paper.

• Proceedings of the Korean Operations and Management Science Society Conference
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• 2005.10a
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• pp.207-212
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• 2005

The SM(System Management) is more important than SI(System Integration) in business model of software industry. And the role of ITO(IT Outsourcing) is increasing, recently. Also, The interest of ITIL increasing in the software industry. In the perspective of business, IT organization has been transformed from supportive division the core business organization, IT organization needs the satisfaction of customer’s requirements. So, process oriented IT management is required. In the perspective of technique, according to need of IT infra for a rapid change management, an application management, systematic development and operating process are required. Therefore, this paper analyzes of IT service core process in service support and service delivery that was offered by ITIL using the AHP methodology This paper shows the results of IT service survey in domestic software industry. And this paper gives a guideline of introduction ITIL

• 한국디지털정책학회:학술대회논문집
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• 2004.05a
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• pp.343-354
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• 2004

A Project planning is one of the most important processes that determines success and failure of the project. Scope management for project planning is also essential job in system integration project. However project planning is very difficult because lots of factor and their relationships should be considered. Therefore project planning of SI project has been done by project manager s own knowledge and experiences. It is necessary to develop an algorithm of WBS(Work Breakdown Structure) identification & document selection along to project's specificity in project management system using AI technique. This study also present method (ODW model) to cope with the limitations of the existing study that has uniformly customizing the methodology by only project complexity. We propose PPSM(Project planning support module) that apply Rule for determination of route map and document level, and CBR for WBS identification.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.85-89
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• 1999

FDE panel was successfully fabricated through the integration of a 0.7" diagonal Si-based Mo-tip FEA with 25${\times}$25 pixels, Y2O3:Eu or ZnO:Zn phosphor screen, and vacuum sealing through an exhausting glass tube, including a getter. The panel system was driven by an external driver circuit having pulse width modulation(PWM) driving scheme. Before character imaging, it was stabilized through tip aging by slowly increasing a pulse-mode emission current and phosphor aging by a coulombic charging process. After aging, luminescent characteristics such as emission uniformity, charging and arcing phenomena were shown to be improved significantly.

• Information Systems Review
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• v.7 no.2
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• pp.1-21
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• 2005

Integrated Railroad Information System(IRIS) Construction Project is one of the super projects in Korea required to invest over 100 billion won and 10,000 engaged manpower until Dec 30, 2004. Composition of this paper is as follows; firstly, examined individual contents and aspects of IRIS, and studied formality and contents that have been based to project methodology for successful propulsion of project in overall situation of SI project progress until present. Secondly, presented for construction background of IRIS as well as Project Management and Project Development Methodologies. Thirdly, described each characteristic and development substance for individual systems after present whole contents and system image of the system. Finally, presented successful propulsion result of this project and development directions. We presented development example laying stress on IRIS's Project contents and propulsion circumstances. Evaluation about operation results should be analyzed and studied in detail operating system from now on.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.328-328
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• 2008

As a low K material for high frequency high integration modules, glass/ceramic composites were investigated. Glass composition were selected from $SiO_2-B_2O_3-Al_2O_3-R_2O$-RO system which having very low dielectric constant and cordierite was used as a ceramic filler. These composites were sintered at temperature range from $850^{\circ}$ to $950^{\circ}$ and XRD, SEM microstructure analysis of sintered bodies were performed for understanding sintering behavior. Any crystallization was not occurred and dense sintered bodies were attained. Dielectric and mechanical properties of these sintered glass/cordierite composites were analysed by network analyzer and UTM. Glass/ceramic composite with 50 wt% cordierite showing a dielectric constant (${\varepsilon}_r$) of 5.4, Q${\times}f_0$ (Q) of 1600 at 1 GHz and maximum bending strength of 163 MPa was attained.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.327.1-327.1
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• 2014

Nitrides-on-silicon structures are considered to be an excellent candidate for unique design architectures and creating devices for high-power applications. Therefore, a lot of effort has been concentrating on growing high-quality III-nitrides on Si substrates, mostly Si(111) and Si(001) substrates. However, there are several fundamental problems in the growth of nitride compound semiconductors on silicon. First, the large difference in lattice constants and thermal expansion coefficients will lead to misfit dislocation and stress in the epitaxial films. Second, the growth of polar compounds on a non-polar substrate can lead to antiphase domains or other defective structures. Even though the lattice mismatches are reached to 16.9 % to GaN and 19 % to AlN and a number of dislocations are originated, Si(111) has been selected as the substrate for the epitaxial growth of nitrides because it is always favored due to its three-fold symmetry at the surface, which gives a good rotational matching for the six-fold symmetry of the wurtzite structure of nitrides. Also, Si(001) has been used for the growth of nitrides due to a possible integration of nitride devices with silicon technology despite a four-fold symmetry and a surface reconstruction. Moreover, Si(110), one of surface orientations used in the silicon technology, begins to attract attention as a substrate for the epitaxial growth of nitrides due to an interesting interface structure. In this system, the close lattice match along the [-1100]AlN/[001]Si direction promotes the faster growth along a particular crystal orientation. However, there are insufficient until now on the studies for the growth of nitride compound semiconductors on Si(110) substrate from a microstructural point of view. In this work, the microstructural properties of nitride thin layers grown on Si(110) have been characterized using various TEM techniques. The main purpose of this study was to understand the atomic structure and the strain behavior of III-nitrides grown on Si(110) substrate by molecular beam epitaxy (MBE). Insight gained at the microscopic level regarding how thin layer grows at the interface is essential for the growth of high quality thin films for various applications.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.41.2-41.2
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Metal Oxide Semiconductor) based electronic devices become much faster speed and smaller size than ever before. However, very narrow interconnect line width causes some drawbacks. For example, deposition of conformal and thin barrier is not easy moreover metallization process needs deposition of diffusion barrier and glue layer. Therefore, there is not enough space for copper filling process. In order to overcome these negative effects, simple process of copper metallization is required. In this research, Cu-V thin alloy film was formed by using RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane $SiO_2$/Si bi-layer substrate with smooth and uniform surface. Cu-V film thickness was about 50 nm. Cu-V layer was deposited at RT, 100, 150, 200, and $250^{\circ}C$. XRD, AFM, Hall measurement system, and XPS were used to analyze Cu-V thin film. For the barrier formation, Cu-V film was annealed at 200, 300, 400, 500, and $600^{\circ}C$ (1 hour). As a result, V-based thin interlayer between Cu-V film and $SiO_2$ dielectric layer was formed by itself with annealing. Thin interlayer was confirmed by TEM (Transmission Electron Microscope) analysis. Barrier thermal stability was tested with I-V (for measuring leakage current) and XRD analysis after 300, 400, 500, 600, and $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However V-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Thus, thermal stability of vanadium-based thin interlayer as diffusion barrier is good for copper interconnection.