• Proceedings of the Korean Institute of Intelligent Systems Conference
• /
• 2007.04a
• /
• pp.485-488
• /
• 2007

최근 Analog Sampled-Data 신호처리를 위하여 주목되고 있는 SI(Switched-Current) circuit은 저전력 동작을 하는 장점이 있지만, 반면에 SI circuit에서의 기본 회로인 Current Memory는 Charge Injection에 의한 Clock Feedthrough이라는 치명적인 단점을 갖고 있다. 따라서 본 논문에서는 Current Memory의 문제점인 Clock Feedthrough의 일반적인 해결방안으로 Dummy Switch의 연결을 검토하였고, Austria Mikro Systeme(AMS)에서 $0.35{\mu}m$ CMOS process BSIM3 Model로 제작하기 위하여 Current Memory의 Switch MOS와 Dummy Switch MOS의 적절한 Width을 정의하여야 하므로, 그 값을 도출하였다. Simulation 결과, Switch의 Width는 $2{\mu}m$, Dummy Switch의 Width는 $2.35{\mu}m$로 정의될 수 있음을 확인하였다.

• Proceedings of the Korean Institute of Intelligent Systems Conference
• /
• 2008.04a
• /
• pp.247-250
• /
• 2008

최근 무선통신용 LSI는 배터리 수명과 관련하여, 저전력 동작이 중요시되고 있다. 따라서 Digital CMOS 신호처리와 더불어 동작 가능한 SI (Switched-Current) circuit를 이용하는 Current-mode 신호처리가 주목받고 있다. 그러나 SI circuit의 기본인 Current Memory는 Charge Injection에 의한 Clock Feedthrough라는 문제점을 갖고 있기 때문에, 전류 전달에 있어서 오차를 발생시킨다. 본 논문에서는 Current Memory의 문제점인 Clock Feedthrough의 해결방안으로 CMOS Switch의 연결을 검토하였고, 0.25${\mu}m$ CMOS process에서 Memory MOS와 CMOS Switch의 Width의 관계는 simulation 결과를 통하여 확인하였으며, MOS transistor의 관계를 분명히 하여, 설게의 지침을 제공한다.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.3 no.2
• /
• pp.79-85
• /
• 2008

It is important to consider the life of battery and low power operation for various wireless communications. Thus, Analog current-mode signal processing with SI circuit has been taken notice of in designing the LSI for wireless communications. However, in current mode signal processsing, current memory circuit has a problem called clock-feedthrough. In this paper, we examine the connection of CMOS switch that is the common solution of clock-feedthrough and calculate the relation of width between CMOS switch for design methodology for improvement of current memory. As a result of simulation, when the width of memory MOS is 20um, ratio of input current and bias current is 0.3, the width relation in CMOS switch is obtained with $W_{Mp}=5.62W_{Mn}+1.6$, for the nMOS width of 2~6um in CMOS switch. And from the same simulation condition, it is obtained with $W_{Mp}=2.05W_{Mn}+23$ for the nMOS width of 6~10um in CMOS switch. Then the defined width relation of MOS transistor will be useful guidance in design for improvement of current memory.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.21 no.5
• /
• pp.1325-1331
• /
• 1996

In this paper, a new current-memory circuit is proposed that reduces the clock feedthrough(CFT) error voltage causing total harmonic distortion(THD) increment in switched-current(SI) systems. Using PMOS transistor in CMOS complementary, the proposed one reduces output distortion current due to the CFT errorvoltage. A proposed current-memory is designed using a 1.2.mu.m CMOS process anda 1MHz sinusoidal signal having a 68.mu.A amplitude current is applied as input (sampling frequency:20MHz). It hasbeen shown from the simulation that the output distortion current effected by the CFT error voltage is reduced by approximately 10 times the error voltage of conventional one, THD is -57dB in case ofappling 1kHz frequency input signalwith 0.5 peak signal-to-bias current ratio.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.8 no.5
• /
• pp.35-41
• /
• 2008

This paper presents the design method of current-mode signal processing for high speed and low power digital audio signal processing. The digital audio processor requires a digital signal processing such as fast Fourier transform (FFT), which has a problem of large power consumption according to the settled point number and high speed operation. Therefore, a current-mode signal processing with a switched Current (SI) circuit was employed to the digital audio signal processing because a limited battery life should be considered for a low power operation. However, current memory that construct a SI circuit has a problem called clock-feedthrough. In this paper, we examine the connection of dummy MOS that is the common solution of clock-feedthrough and are willing to calculate the relation of width between dummy MOS for a proposal of the design methodology for improvement of current memory. As a result of simulation, in case of that the width of memory MOS is 20um, ratio of input current and bias current is 0.3, the relation of width between switch MOS and dummy MOS is $W_{M4}=1.95W_{M3}+1.2$ for the width of switch MOS is 2~5um, it is $W_{M4}=0.92W_{M3}+6.3$ for the width of switch MOS is 5~10um. Then the defined relation of MOS transistors can be a useful design guidance for a high speed low power digital audio processor.

• Proceedings of the IEEK Conference
• /
• 2000.07a
• /
• pp.211-214
• /
• 2000

In this paper, a discrete-time S-dimensional chaos circuit (S = 1,2,3,4,...) with array structure is proposed. By employing array structure which consists of 1-dimensional chaos circuits, the proposed circuit can achieve long working-life. This feature is favorable to exploit as a building block of chaos application systems to get into home electric appliances. Further more, the proposed circuit synthesized using switched-current (SI) techniques is suitable for integration. Concerning the proposed circuit, SPICE simulations are performed. SPICE simulations showed that the proposed circuit can generate the chaotic signals in spite of the fault of the building blocks of the proposed circuit. The proposed circuit is integrable by a standard BiCMOS technology.

• Journal of rehabilitation welfare engineering & assistive technology
• /
• v.10 no.3
• /
• pp.237-242
• /
• 2016

The major advantage of slip-ring technology in Spiral CT is that it facilitates continuous rotation of the x-ray tube, so that volume data can be acquired from a patient quickly. Not only for such a fast scan, but also for the dose reduction purpose, high signal-to-noise ratio and fast data acquisition system is required. In this study, we have built a multi-channel photodetector and multi-channel data acquisition system for CT application. The detector module consisted of CdWO4 crystal and Si photodiode in 16 channels. For the performance test of the preamplifier stage, both the transimpedance and switched integrator types are optimized for the photodetector modules. Switched integrator showed better noise performance in the limited bandwidth which is suitable for the current CT application. The control sequence for data acquisition and 20 bit ADC is designed with VHDL(Very High Speed Integrated Circuit Hardware Description Language) and implemented on FPGA(Field Programmable Gate Array) chip. Our Si photodiode detector module coupled to CdWO4 crystal showed comparable signal with other commercially available photodiode for CT. Switched integrator type showed higher SNR but narrower bandwidth compared to transimpedance preamplifier. Digital hardware is designed by FPGA, so that the control signal could be redesigned without hardware alteration.