• Journal of the Korean Society for information Management
• /
• v.21 no.4 s.54
• /
• pp.133-152
• /
• 2004

As the Internet facilitates the rapid increase of information availability, the study on SDI service that provides users with relevant document in a timely manner has been developed. However, the practical use of this service has been low. This thesis aims at analyzing the reasons for this and developing relevance feedback based SDI system to improve the performance of the existing SDI system. Experimental systems that are developed for this study are SDI system based on users' minimum intervention feedback, SDI system based on perfect automation feedback, and SDI system based on users' maximum intervention feedback. The fourth system that utilizes the traditional SDI system is also studied to evaluate the level of performance improvement of the newly developed three types of SDI system. As a result of this study, SDI system based on users' maximum intervention feedback showed greatest performance improvement. The next performance improvement happened in order of SDI system based on perfect automation feedback, SDI system based on users' minimum intervention feedback, and the traditional SDI system. Feedback based systems showed greater performance improvement as they went through more feedback processes.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.277-280
• /
• 2007

Field emission-back light unit (FE-BLU) was fabricated using carbon nanotube (CNT) emitter. Local dimming and local brightening techniques were achieved, which results in very high contrast ratio. In addition, the motion blur phenomenon, one of the serious problems of liquid crystal display (LCD) with cold cathode fluorescent lamp (CCFL)-BLU, was removed from LCD-TV by using FE-BLU.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.13 no.6
• /
• pp.2743-2750
• /
• 2012

The SDI technology can transmit video, audio and control data with a coaxial cable. The compatibility of HD-SDI Camera is very important. The SDI devices and products without compliance problem are able to guarantee interaction. The HDcctv Alliance has released the standard by classifying the attributes of the SDI devices and products. It is important for each SDI devices and products to keep the compatibility of this standard. In this paper, the camera system that comply with the HDcctv Standard was implemented. In order to receive certification of HDcctv Alliance, the experiment was performed and the satisfied result was gained.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.1097-1100
• /
• 2008

We demonstrate that the performance of amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFT) can be optimized by controlling the interfaces between IGZO and sandwiching insulators and by proper deposition of IGZO layer. Specifically, contact and channel resistances are decreased by reducing IGZO bulk resistance and optimizing dry-etch process, respectively. Field-effect mobility ($\mu_{FE}$) and subthreshold gate swing (S) are further enhanced by fine-tuning IGZO deposition condition.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.191-192
• /
• 2003

For the CNT-FED to be cost-effective, many efforts for the lower voltage operation have been made in the under-gate cathode structure. In this study, the effects of the frit proportion in the CNT paste, cathode electrode width, CNT-to-counter electrode gap, and the CNT length in the cathode structure were examined.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.303-304
• /
• 2002

32"-diagonal gated carbon nanotube(CNT) cathodes named under-gate cathodes for large-size display applications have been fabricated and characterized. The emission uniformity looks fine, even without the resistive layer. The emission performance has been improved by scaling down the cathode electrode dimension.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.127-130
• /
• 2009

High luminance 3D built-in PDP panel was developed with newly adopted fast-decaying phosphor. Luminance of 3D PDP was increased about 40% by reducing the particle size of RGB phosphors and using $Y_3(Al,Ga)_5O_{12}:Ce^{3+}$ phosphor. Decay time of developed 3D PDP was 5.2ms/4.9ms for Red/Green color.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.145-148
• /
• 2007

The authors report on the fabrication of thin film transistors (TFTs) that use amorphous indium-gallium-zinc oxide (a-IGZO) channel and have the channel length (L) and width (W) patterned by dry etching. To prevent the plasma damage of active channel, a 100-nm-thckness $SiO_{x}$ by PECVD was adopted as an etch-stopper structure. IGZO TFT (W/L=10/50${\mu}m$) fabricated on glass exhibited the high performance mobility of $35.8\;cm^2/Vs$, a subthreshold gate voltage swing of $0.59V/dec$, and $I_{on/off}$ of $4.9{\times}10^6$. In addition, 4.1” transparent QCIF active-matrix organic light-emitting diode display were successfully fabricated, which was driven by a-IGZO TFTs.

• Journal of Korean Society of Environmental Engineers
• /
• v.35 no.3
• /
• pp.200-205
• /
• 2013

Pretreatment process is the critical step of RO (Reverse Osmosis) membrane desalination plant in order to prevent RO membrane fouling. The pretreatment as a key component of RO process must be designed to produce a constant and high quality RO feedwater which has low silt density index (SDI). This experiment was conducted to assess parameters affecting SDI value, such as pH, seawater turbidity, temperature, and coagulant dose. The experimental results indicated that the source seawater turbidity did cause little effects on SDI values of filtered water. The 0.45 um hydrophilic membrane was more appropriate than the hydrophobic membrane for measuring SDI. The SDI value was increased with decreasing pH under the condition of below pH 7.0. In addition, the water temperature significantly affected the SDI values, showing higher SDI value with lower water temperature.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.640-643
• /
• 2007

The effect of plasma damage was investigated on amorphous gallium-indium-zinc oxide (a-GIZO) films and transistors. Ion-bombardment by plasma process affects to turn semiconductor to conductor materials and plasma radiation may degrade to transistor electrical properties. All damages are easily recovered with a $350^{\circ}C$ thermal annealing.