• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.514-519
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$as a dielectrical isolation layer a SDB SOI Hall sensor without pn junction has been fabricated on the Si/ $SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to 30$0^{\circ}C$ the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than $\pm$6.7$\times$10$_{-3}$ and $\pm$8.2$\times$10$_{-4}$$^{\circ}C$ respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and high-temperature operation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.830-833
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• 2003

This paper describes the fabrication and characteristics of 3C-SiCOI sotctures by SDB and etch-back technology for high-temperature MEMS applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si(001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The wafer bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR. The strength of the bond was measured by tensile strengthmeter. The bonded interface was also analyzed by SEM. The properties of fabricated 3C-SiCOI structures using etch-back technology in TMAH solution were analyzed by XRD and SEM. These results indicate that the 3C-SiCOI structure will offers significant advantages in the high-temperature MEMS applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.29-33
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$ as a dielectrical isolation layer, a SDB SOI Hall sensor without pn junction isolation has been fabricated on the Si/$SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than ${\pm}6.7{\times}10^{-3}/^{\circ}C$ and ${\pm}8.2{\times}10^{-4}/^{\circ}C$, respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and high-temperature operation.

• Journal of Sensor Science and Technology
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• v.4 no.1
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• pp.29-34
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• 1995

The absolute silicon pressure sensors are fabricated using SDB(silicon direct bonded) wafer. The fabricated pressure sensors consist of four bridge type piezoresistances and a diaphragm which plays a role of mechanic amplifier to supplying pressure. In order to make the diaphragm cavity in low vaccum condition, we anodically bonded Si diaphragm with pyrex 7740 glass in 0.02mmHg, at $400^{\circ}C$. The sensitivity and offset voltage of the fabricated sensors were $30.4{\mu}V/VmmHg$ and 30.6mV, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.565-568
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$ as a dielectrical isolation layer, a SDB SOI Hall sensor without pn junction isolation has been fabricated on the Si/$SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than $\pm 6.7$$\times$$10^{-3}$/$^{\circ}C$ and $\pm 8.2$$\times$$10^{-4}$/$^{\circ}C$respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and hip high-temperature operation.

• The Journal of Natural Sciences
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• v.5 no.2
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• pp.25-32
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• 1992

Statistical database(SDB) are large database primarily collected for purpose of statistical analysis. Commerical database management systems have not been widely used for SDB because of the efficiency problem of storage and access of those systems for SDB. In this paper, we propose SDB management method to use a front-end system to a Relatianal Datebase Management System (RDBMS). We do the design of SM-F system (Stasticical database Management as Front-end system) as a front-end system to a RDBMS. In the system, we use GROS model specially proposed for SDB, and store and manage summary database and meta database to support statistical analysis and to provide users with statistical summary information.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.301-306
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• 2000

This paper describes on the fabrication of a SOI substrate by SDB technology and electrochemical etch-stop. The surface of the thinned SDB SOI substrate is more uniform than that of grinding or polishing by mechanical method, and this process was found to be a very accurate method for SOI thickness control. During electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential(OCP) point, the passivation potential(PP) point and anodic passivation potential. The surface roughness and the controlled thickness selectivity of the fabricated a SDB SOI substrate were evaluated by using AFM and SEM, respectively.

• The Korean Journal of Rheology
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• v.3 no.2
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• pp.175-185
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• 1991

Sodium octylbenzenesulfonate(SOBS)와 sodium dodecylbenzenesulfonate(SDBS)를 폴리프로필렌(PP) 용융액에 각각 균일하게 서로 다른 함량으로 섞어 넣은 후에 용융압착법 으로 PP 필름을 제조하였다. 저장 점성도(η＇) 저장탄성률(G＇) 및 손실 탄성률(G＂)을 진 동식 레오미터를 사용하여 170~195$^{\circ}C$에서 측정하였다. 실험온도 범위내에서 첨가제를 함유 한 PP와 순PPrks에 Cole-Cole 플롯(G＇에 대한 G＂의 log-log 플롯)에는 차이가 없었다. 그러나 광범위한 전단속도에서 SOBS의 첨가량이 8%를 넘어서면서 η＇과 G＇은 증가하였 다. 이러한 현상은 PP 중에서의 첨가제의 응집효과로 설명되었으며 이것은 SOBS와 SDBS 를 함유하는 PP 필름의 시차 주사열량법 및 주사전자 현미경 관찰결과로 확인되었다. SDBS를 8% 미만 함유하는 PP로부터 섬유의 용융방사가 가능하였으나 SDBS3% 이상 함 유PP 방사섬유는 연신 과정중에 섬유의 절단이 이따금 일어났다. PP 기질내에 있어서의 SDBS의 뜨거운 물에대한 견뢰성을 SDBS와 C. I. Basic blue 41사이의 이온결합 형성 거동 에 바탕을 두어 가시분광법에 의하여 검토하였다.

• Journal of the Korean Geosynthetics Society
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• v.7 no.4
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• pp.37-45
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• 2008

A pilot test using environmentally friendly drains, was carried out to evaluate their applicability potential in the field. The pilot test site was divided into 5 different areas, with several combinations of vertical and horizontal drains installed for evaluation. Conventional natural fiber drains (FDB), new developed straw drain board (SDB) and plastic drain board (PDB) were used as vertical drains, while sand and fiber mats were used as horizontal drains. Surface settlement rates and excess pore pressure generation/dissipation tendency of PDB and FDB are almost identical except those of SDB. Cone tip resistance obtained from cone penetration test measured at the end of 1st consolidation stage for upper soft layer definitely increased irrespective of types of vertical drains. The monitoring and site investigation test data obtained at the pilot test site prove the vertical natural fiber drains can be used as substitutes of conventional plastic and sand material.

• The Journal of the Korean Society for Microbiology
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• v.22 no.4
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• pp.435-443
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• 1987

A total of 30 strains of Candida albicans were examined for susceptibility to amphotericin B and ketoconazole using Sabouraud's dextrose broth, Kimmig broth and Supplemented yeast nitrogen base broth media. Furthermore, the growth curve and colony forming units were checked for use of stationary-phase cells and 2-hour incubation cells in the absence of atifungal agents. The viable counts were determined periodically during incubation by standard plate count techniques. The minimum inhibitory concentrations of amphotericin B for use of stationary phase cells were as follows: SDB, $0.09{\sim}0.97mcg/ml$(0.39mcg/ml); Kimmig broth, $0.19{\sim}0.39mcg/ml$(0.42 mcg/ml) and SYNB, $0.19{\sim}0.39mcg/ml$mcg/ml(0.23mcg/ml). In ketoconazole, MICs were value SDB, $3.12{\sim}25.0mcg/ml$(12.5mcg/ml); Kimmig broth, $12.5{\sim}25.0mcg/ml$ (22.5mcg/ml) and SYNB, $3.12{\sim}12.5mcg/ml$(6.71mcg/ml). The MICs of amphotericin B(0.2mcg/ml cone.) for use of 2-hour incubation cells in absence of AMB were, SDB, $0.04{\sim}0.39mcg/ml$(0.11mcg/ml); Kimmig broth, $0.09{\sim}0.39mcg/ml$(0.18mcg/ml) and SYNB, $0.09{\sim}0.19mcg/ml$(0.14mcg/ml) and in KTZ, the value of MICs were SDB, $3.12{\sim}25.0mcg/ml$(12.22mcg/ml); Kimmig broth, $0.78{\sim}25.0mcg/ml$(11.01mcg/ml) and SYNB, $1.56{\sim}12.5mcg/ml$(3.90mcg/ml). The two-log reductions in CFU per milliliter observed when 2 hour preincubation cells were treated with 0.2mcg/concentrations of AMB and 25.0mcg/ml of KTZ. However, AMB treated cells were restored to growth activity, it suggested that the AMB has no active antifungal activity.