• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 춘계학술대회 논문집
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• pp.6-6
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• 2010

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode (Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition temperature. The crystallinity of SBN thin films were increased with increase of deposition temperature in the temperature range of 100~400[$^{\circ}C$]. The surface roughness of deposition temperature($300^{\circ}C$) showed about 4.33[nm]. The grain and crystallinity of SBN thin films were increased with the increase of annealing temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 춘계학술대회 논문집
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• pp.7-7
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• 2010

The SBN thin films were deposited at substrate temperature of 300[$^{\circ}C$] on Pt-coated electrode (Pt/Ti/$SiO_2$/Si(100)) using RF sputtering method. The grain and crystallinity of SBN thin films were increased with the increase of annealing temperature. The dielectric constant(150) of SBN thin film was obtained by annealing temperature above 750[$^{\circ}C$]. The frequency dependence of dielectric loss showed a value within 0.03 in frequency ranges of 1~1000[kHz].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.309-312
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• 2002

Ferroelectric $Sr_{0.3}Ba_{0.7}Nb_{2}O_{6}$ (SBN30) thin films were deposited on Pt/Ti/$SiO_{2}$/Si(100) substrates by ion beam sputtering. During annealing treatment at $750^{\circ}C$, poling was attempted by applying dc voltage bias across polished surfaces. Phase relation, microstructure and crystallization behavior were examined using XRD and FE-SEM. Ferroelectric hysteresis characteristics were also determined where both remanent polarization and coercive values decreased with the increase of bias voltage. The measured remanent polarization and coercive field values at 5 V and 10 V bias were $36{\mu}C/cm^2$, $10{\mu}C/cm^2$ and 100kV /cm, 80kV /cm, respectively.

• 대한조선학회논문집
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• 제44권5호
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• pp.488-495
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• 2007

In this paper, SBN (Structure-Borne Noise) reduction of resiliently mounted machinery and effect of the foundation impedance on mount performance is studied. SBN reduction through the mount is analyzed by using two theoretical models; mass-spring model and wave model, in which longitudinal wave propagation is included. It is found that floor impedance greatly affects SBN reduction through lower mount, while it is almost negligible to SBN reduction through upper mount. Comparisons between measurement and predictions shows that the mass-spring model is valid only in low frequency range below few hundred Hz, while for high frequency ranges longitudinal wave propagation in the mount must be considered.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 춘계총회,특별강연,심포지움,연구발표회
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• pp.16.2-16.2
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• 2000

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 춘계총회 및 연구발표회 초록집
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• pp.89.2-89
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• 2003

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
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• pp.180.2-180
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• 2002

• 한국재료학회지
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• 제12권6호
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• pp.464-469
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• 2002

$SrBi_2Nb_2O_9(SBN)$ thin films were grown on Pt/Ti/Si and p-type Si(100) substrates by rf-magnetron co-sputtering method using two ceramic targets, $SrNb_2O_6\; and \;Bi_2O_3$. The structural and electrical characteristics have been investigated to confirm the possibility of the SBN thin films for the applications to destructive and nondestructive read out ferroelectric random access memory(FRAM). For the optimum growth condition X-ray diffraction patterns showed that SBN films had well crystallized Bi-layered perovskite structure after $700^{\circ}C$ heat-treatment in furnace. From this specimen we got remnant polarization $(2P_r)$ of about 6 uC/$\textrm{cm}^2$ and coercive voltage $(V_c)$ of about 1.5 V at an applied voltage of 5 V. The leakage current density was $7.6{\times}10^{-7}$/A/$\textrm{cm}^2$ at an applied voltage of 5V. And for the NDRO-FRAM application, properties of SBN films on Si substrate has been investigated. From transmission electron microscopy (TEM) analysis, we found the furnace treated sample had a native oxide about 2 times thicker than the RTA treated sample and this thick native oxide layer had a bad effect on C-V characteristics of SBN/Si thin film. After $650^{\circ}C$ RTA process, we got the improved memory window of 1.3 V at an applied voltage of 5 V.

• 한국작물학회:학술대회논문집
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• 한국작물학회 2017년도 9th Asian Crop Science Association conference
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• pp.94-94
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• 2017

Oryza sativa and Oryza glaberrima are rice cultivars distributed in Asia and Africa. There are several differences between these cultivars in morphological characteristics such as panicle structure and especially the secondary branch number of O. glaberrima is less than that of O. sativa. Generally, branch number of panicle related to a large vascular bundle number (VBN) among O. sativa and there is a wide variation of the VBN of the peduncle from where the bundles enter into the rachis branches. However, there is less information about VBN in O. glaberrima and also the relationship between VBN and branch numbers, the primary branch number (PBN) and secondary branch number (SBN). Additionally, the genetic factor for VBN and branch number in O. glaberrima is not completely exploited. In this study, phenotypic variation for VBN and panicle structure were investigated using a set of 40 $BC_3$ -derived from IRGC 104038 (O. glaberrima from Senegal) and 35 $BC_4$ -derived from IRGC103777 (O. glaberrima from Mali) introgression lines with a genetic background of japonica rice Taichung 65. Taichung 65 had 11.8 PBN, 16.0 SBN and 11.5 VBN, while IRGC 103777 had 12.0 PBN, 15.0 SBN and 15.3 VBN. The introgression lines derived from IRGC 104038 had range from 9.0 to 14.4 in the PBN, range from 9.6 to 33.5 in the SBN and range from 9.8 to 14.8 in the VBN. Additionally, the introgression lines derived from IRGC 103777 had range from 9.0 to 18.5 in the PBN, range from 10.3 to 39.0 in the SBN and range from 9.0 to 15.3 in the VBN. Among two set of introgression lines, there are significant correlation between VBN and PBN. Multiple introgression lines indicated higher PBN, SBN and VBN than Taichung 65 and these examined characteristics are supposedly controlled by quantitative traits loci. The genetic factor related to VBN and panicle architecture can be revealed using segregating population in future study.

• 한국재료학회지
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• 제12권12호
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• pp.962-966
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• 2002

The $SrBi_2$$Nb_2$$O_{9}$ (SBN) thin films were deposited with $SrNb_2$$O_{6}$ / (SNO) and $Bi_2$$O_3$ targets by co-sputtering method. For the growth of SBN thin films, we adopted the various power ratios of two targets; the power ratios of the SNO target to $Bi_2$$O_3$ target were 100 W : 20 W, 100 W : 25 W, and 100 W : 30 W during sputtering the SBN films. We found that the electrical properties of SBN films were greatly dependent on Bi content in films. The $Bi_2$Pt and $Bi_2$$O_3$ phase as second phases occurred at the films with excess Bi content greater than 2.4, resulting in poor ferroelectric properties. The best growth condition of the SBN films was obtained at the power ratio of 100 W : 25 W for the two targets. At this condition, the crystallinity and electrical properties of the films were improved at even low annealing temperature as $700^{\circ}C$ for 1h in oxygen ambient and the Sr, Bi and Nb component in the SBN films were about 0.9, 2.4, and 1.8 respectively. From the P-E and I-V curves for the specimen, the remnant polarization value ($2P_{r}$) of the SBN films was obtained about 6 $\mu$C/c $m^2$ at 250 kV/cm and the leakage current density of this thin film was $2.45$\times$10^{-7}$ $A/cm^2$ at an applied voltage of 3 V.V.