• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2014.10a
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• pp.79-83
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• 2014

In this paper, SAW devices are fabricated using various IDT shape(Single/Double) to check an effect of the IDT on SAW device. And based on theory of a particle velocity moved by SAW and IDT, a particle velocity is measured and calculated. Depend on insert power, a particle velocity using Single-IDT SAW device is about two times bigger than Double-IDT SAW device and it's almost same with a theoretical different.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.247-250
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• 2002

SAW filters were fabricated on $LiNbO_3$ substrates to evaluate frequency response and properties of photolithography. In the both of etch and lift-off methods, lift off method was superior to etch method in fabrication process. Frequency response property was measured by network analyzer. From measurement of acoustic property, SAW propagation velocity was 3574.9m/sec for $LiNbO_3$ SAW filter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.144-146
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• 1992

Surface acoustic wave(SAW) oscillator offers many attractive features for application to vapor sensors. The perturbation of SAW velocity by the hexafluoropropence plasma polymer thin film has been studied for relative humidity sensing. adsorption of moisture produces rapid aid changes in the properties of the film, resulting in a change in the velocity of surface acoustic waves and, hence, in the frequency of one SAW oscillator. The device used in our experiments have 55 MHZ SAW oscillator fabricated on a LiNbO substrate.

• Journal of the Korean Society for Nondestructive Testing
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• v.26 no.5
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• pp.291-296
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• 2006

The residual stress in shot-peened Al 7075 alloy was evaluated using surface acoustic wave (SAW). Shot peening was conducted to produce a variation in the residual stress with the depth below the surface under a shot velocity of 30 m/s. The SAW velocity was measured from the V(z) curve using a scanning acoustic microscopy (SAM). The Vickers hardness profile from the surface showed a significant work hardening near the surface layer with a thickness of about 0.25 mm. As the residual stress became more compressive, the SAW velocity increased, whereas as the residual stress became more tensile, the SAW velocity decreased. The variation in the SAW velocity through the shot peened surface layer was in good agreement with the distribution of the residual stress measured by X-ray diffraction technique.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.1-7
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• 1997

SAW filter has been used in mobile communication device, bandpass filter and resonator for merits )f miniaturization and high reliability. Materials for substrate mainly used single crystal such as LiNbO$_{3}$, LiTaO$_{3}$, ZnO. In this study, it was attempted that LiNbO$_{3}$ was substituted for piezoelectric ceramics(PZT4, PZT5A and PZT8) which had simple fabrication process because fabrication of crystal is difficult and it's cost is high. SAW filters were fabricated by the photolithography on piezoelectric ceramics substrates in order to compare their characteristics with LiNbO$_{3}$'s. The experimental value of center frequency was compared with theoretical one. The average difference of center frequency was 3.7%. PZT8 showed the best bandwidth properties among them. It is considered that PZT8 has higher mechanical quality factor and propagation velocity than others.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.25 no.10
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• pp.660-666
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• 2015

Surface acoustic wave(SAW) device is used for transporting and patterning micro-scale particles such as cells. In this research, velocity of particles was investigated moved by SAW device with two types of interdigital electrode transducers(IDTs) under various conditions. SAW devices which have single IDTs and double IDTs were designed and fabricated. On the previous studies, resultant velocities of particles were predicted considering output power and power ratio between IDTs-shape. For more accurate prediction, power loss in SAW device and a power difference between two types of IDTs-shape were considered. Maximum error between the test results and predicted values was 5 % so the power loss must be considered in the velocity prediction of the particles.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.80-80
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• 2000

Surface acoustic wave (SAW) devices have become more important as mobile telecommunication systems need h호-frrequency, low-loss, and down-sized components. Higher-frequency SAW divices can be more sasily realized by developing new h호-SAW-velocity materials. The ZnO/diamond/Si multilasyer structure is one of the most promising material components for GHz-band SAW filters because of its SAW velocity above 10,000 m/sec. Silicon carbide is also a potential candidate material for high frequency, high power and radiation resistive electronic devices due to its superior mechanical, thermal and electronic properties. However, high price of commercialized 6- or 4H-SiC single crystalline wafer is an obstacle to apply SiC to high frequency SAW devices. In this study, single crystalline 3C-SiC thin films were grown on Si (100) by MOCVD using bis-trimethylsilymethane (BTMSM, C7H20Si7) organosilicon precursor. The 3C-SiC film properties were investigated using SEM, TEM, and high resolution XRD. The FWHM of 3C-SiC (200) peak was obtained 0.37 degree. To investigate the SAW propagation characteristics of the 3C-SiC films, SAW filters were fabricated using interdigital transducer electrodes on the top of ZnO/3C-SiC/Si(100), which were used to excite surface acoustic waves. SAW velocities were calculated from the frequency-response measurements of SAW filters. A generalized SAW mode. The hard 3C-SiC thin films stiffened Si substrate so that the velocities of fundamental and the 1st mode increased up to 5,100 m/s and 9,140 m/s, respectively.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.547-552
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• 2003

ZnO thin films on glass substrate were deposited by RF magnetron reactive sputtering at 100 W, 1.33 Pa, Ar/O2=50 : 50, 200$^{\circ}C$, and a target/substrate distance of 4 cm. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, SEM, AFM, RBS, and electrometer. All films showed a strong preferred c-axis orientation and the chemical stoichiometry. The propagation velocity of ZnO/IDT/glass of single electrode and double electrode types SAW filter was about 2,589 m/sec, 2,533 m/sec and insertion loss was a minimum value of about -11 dB and -21 dB, respectively.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.3
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• pp.594-599
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• 2011

A SAW strain sensor based on Shear Horizontal wave with an 92 MHz central frequency was developed. It consists of SAW sensor, PCB substrate and bonding material (Loctite 401). External force applied to PCB substrate bonded to a piezoelectric substrate induces strain at the substrate surface, which causes changes in the elastic constant and density of the substrate and hence the propagation velocity of the SAW. The change in the velocity of the SAW result in a frequency shift of the sensor and by measuring a frequency shift, we can extract the strain induced by the external force. The $41^{\circ}$ YX $LiNbO_3$ was used because it has a Leaky shear horizontal(SH) wave propagation mode and a high electromechanical coupling coefficient ($K^2$=17.2%). And to compare with Rayleigh wave mode, $128^{\circ}$ YX $LiNbO_3$ was used. And to make a stable and low insert loss, Split IDT structure was used. The obtained sensitivity and linearity of the SAW strain sensor in the case of Split IDT were measured to be 17.2 kHz / % and 0.99, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.141-144
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• 2003

This study proposes ZnO thin film as a piezoelectric material for SAW (surface acoustic wave) filter. The ZnO thin film with thickness $2.6{\mu}m$ was deposited (0001)-oriented sapphire by RF magnetron sputtering technique. IDTs (inter-digital transducers) electrodes were patterned upon SAW filter mask with solid finger structure unapodized using lift-off method on ZnO piezoelectric thin film. SAW propagation velocity was measured with the center frequency by HP 8753C network analyzer. A fabricated ZnO SAW filter exhibited a high propagation velocity of 5433 $^m/s$ and relatively insertion loss of -53.391dB at $\lambda=80{\mu}m$. The side-lobe attenuation of the center frequency was about 17dB. When the wavelength was $80{\mu}m$ $(\lambda/4=20{\mu}m)$, the center frequency was 67.907 MHz. $k^2$ (electromechanical coupling coefficient) was 15.84 %.