• Proceedings of the Acoustical Society of Korea Conference
• /
• 1985.10a
• /
• pp.43-46
• /
• 1985

In this paper, the SAW Comb filter which consists of 1 apodized IDT, 2 uniform IDTs, and the grating reflector is studied. The apodized IDT is designed by utilizing the Chebyshev window function, and the output IDTs are arrayed with 0.5$\mu$sec time delay to obtain the Comb characteristics. And also the frequency response below the first peak is sufficiently suppressed by the grating reflector which is constituted 180 electrodes. In experiment the SAW Comb filter is fablicated by depositing Al on the surface of YZ-LiNbO3 substrate. As the experimental result, the frequency characteristics of the SAW Comb filter are consistent with theoretical values in admitted errors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.4
• /
• pp.325-331
• /
• 2002

In this paper, surface acoustic wave(SAW) bandpass filters using slanted finger interdigital electrode transducers(IDTs) are investigated. The slanted finger IDTs are used to design SAW filters with good shape factor, a flat passband, and good out-of-band rejection characteristic. For the filter design, input-output IDT structure was simulated with modified impulse model; uniform-withdrawal weighting IDTs, withdrawal-withdrawal weighting IDTs. SAW filters of uniform-withdrawal weighting IDTs structure were designed and fabricated on $128^{\circ}LiNbO_3$ piezoelectric substrates. Implemented SAW filter has a fractional bandwidth of 30%, center frequency of 70MHz and shape factor of $1.12\pm0.01$.

• The Journal of the Acoustical Society of Korea
• /
• v.21 no.1
• /
• pp.47-55
• /
• 2002

This paper proposes a new improved lumped element equivalent circuit analysis method to analyze withdrawal weighted SAW resonators of irregular electrode configurations, which enables to calculate the frequency response of withdrawal weighted SAW resonators. This method has led to the derivation of Smith equivalent circuit's y-parameters for a single ground electrode and formulated the resonator's admittance by calculating the total current into an IDT assembly. To illustrate the effectiveness of the technique, this method was applied to the design of a simple ladder filter and the change of the filter performance was investigated in relation to the weighting of the series and parallel resonators, respectively. The results shows that the withdrawal weighted resonator ladder filters provide better performance in their bandwidth and transition characteristics than normal ones. This new equivalent circuit analysis method can also serve as a better tool to design and analyze general SAW resonator filters.

• Korean Journal of Materials Research
• /
• v.5 no.6
• /
• pp.650-656
• /
• 1995

High frequency SAW filters for cellular communications were fabricated by metallizing 36$^{\circ}$Y-X LiTaO$_3$piezoelectric substrate with IIDT type electrodes. It was found that the center frequency of the filter was lowered than as designed. In order to overcome such a drawback and enable a fine tuning of its center frequency, dielectric SiN$_{x}$ thin films were deposited on LiTaO$_3$substrate by PECVD as passivation layer and then frequency responses were also characterized. As a result, the center frequency of the filter could be shifted to a higher frequency with increasing the thickness of SiN$_{x}$ film, because SAW velocity increased with increasing the ratio of the thickness of dielectric thin film to wavelength. The insertion loss of the filter, however, became larger with increasing the thickness of SiN$_{x}$ film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.05c
• /
• pp.247-250
• /
• 2002

SAW filters were fabricated on $LiNbO_3$ substrates to evaluate frequency response and properties of photolithography. In the both of etch and lift-off methods, lift off method was superior to etch method in fabrication process. Frequency response property was measured by network analyzer. From measurement of acoustic property, SAW propagation velocity was 3574.9m/sec for $LiNbO_3$ SAW filter.

• The Journal of the Acoustical Society of Korea
• /
• v.20 no.3
• /
• pp.83-90
• /
• 2001

Conventional SAW duplexer filters employ a 1/4 wavelength transmission line, which causes difficulty in fabrication of the strip line on the package. Its manufacturing process is also complicated, because it needs integrating process of the separate transmitting filter, receiving filter and isolation circuits. This paper concerns development of a new structure of the duplexer filter that has all the transmitting filter, the receiving filter and the isolation circuit as a one chip device. For composition of the duplexer, we design the component SAW ladder filters and the isolation network consisting of lumped inductor and capacitor elements. Performance of the whole duplexer is optimized by the nonlinear multivariable minimization of a proper target function, and the result is compared with that of commercial filters.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.41 no.5
• /
• pp.502-507
• /
• 1992

To improve temperature stability, 0.05Pb(SnS11/2TSbS11/2T)OS13T-0.35PbTiOS13T-0.60PbZrOS13T+0.4[wt%]MnO S12T piezoelectic ceramics were manufactured with the addition of CrS12TOS13T by Hot Press method. And the SAW delay line was fabricated and effects of CrS12TOS13T to the propagation characteristics of SAW was investigated, and the SAW filter was fabricated on C4 specimen added by 0.2[wt%] CrS12TOS13T whose propagation characteriatics of surface acoustic wave were the bast and its frequency characteristics was investigated. Electromechancal coupling factor(kS1sTS02T) was 3.11[%] and its temperature coefficient of the center frequency(CS1foT)was -21.27[ppm/$^{\circ}C$] in C4. The 31[MHz]]SAW IF filter of C4 scarcely had diffraction phenomena and therefore it was proper.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.11 no.12
• /
• pp.2374-2381
• /
• 2007

.We have studied to obtain the properly conditions about impedance matching of the SAW filter for the SPUDT type and the bidirectional transducer type later. And we have studied to obtain the SAW filter for the Slanted Finger Interdigital Transducer(SFIT), was formed on the Langasite substrate and was evaporated by Aluminum-Copper alloy and then we performed computer-simulated by simulator In case the SPUDT, we have employed that the number of pairs of the input and output IDT are 50 pairs and the thickness and the width of reflector are $5000{\AA}$ and $3.6{\mu}m$, respectively. And the of the bidirectional transducer, the width of IDT' fingers and the space between IDT' finger and reflector is $1.8{\mu}m$, respectively. Also, we have performed to series connected the SPUDT type with the bidirectional transducer type filter. The frequency response of the fabricated SAW filter has the property that the center frequency is about 190MHz and bahdwidth at the 3dB is probably 5.3MHz after when we have matched impedance. Also, we could obtain that ripple characteristics is less than 0.3dB and insert loss is probably -20dB after when we have matched impedance.

• Journal of the Korean Ceramic Society
• /
• v.40 no.6
• /
• pp.547-552
• /
• 2003

ZnO thin films on glass substrate were deposited by RF magnetron reactive sputtering at 100 W, 1.33 Pa, Ar/O2=50 : 50, 200$^{\circ}C$, and a target/substrate distance of 4 cm. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, SEM, AFM, RBS, and electrometer. All films showed a strong preferred c-axis orientation and the chemical stoichiometry. The propagation velocity of ZnO/IDT/glass of single electrode and double electrode types SAW filter was about 2,589 m/sec, 2,533 m/sec and insertion loss was a minimum value of about -11 dB and -21 dB, respectively.

• Journal of Sensor Science and Technology
• /
• v.16 no.3
• /
• pp.240-245
• /
• 2007

AlN thin film for SAW filter application was deposited on (100) silicon, sapphire, $Si_{3}N_{4}$/Si, and $Al_{2}O_{3}$/Si substrates by reactive magnetron sputtering method, respectively. The structural characteristics were dependent on the structure of substrates. Scanning Electron Microscope (SEM), X-ray Diffraction (XRD) and Atomic Force Microscope (AFM) have been used to analyze structural properties and preferred orientation of AlN thin films. Preferred orientation and SAW characteristic of AlN were improved by insertion of $Al_{2}O_{3}$ buffer layer. Insertion loss of SAW devices using AlN/Si and AlN/$Al_{2}O_{3}$/Si were about 33.27 dB and 30.20 dB, respectively.