• 한국정보통신학회논문지
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• 제13권5호
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• pp.1030-1037
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• 2009

현재 SAW 센서는 많은 발전을 해왔고 온도나 압력용 SAW 센서를 저전력, 고속 신호 처리로 하기 위해서는 TDS(Time Domain Sampling) 방식을 이용한 리더기 플랫폼이 필요하다. 이러한 리더기를 제작하기 위해서는 SAW 센서의 표준 응답신호와의 변화된 응답시간과의 짧은 시간차를 측정하기 위해 고속의 타이머가 필요하게 된다. 여기서 제안하는 플랫폼은 SAW 센서에 신호를 받아서 비교기로 아날로그 신호를 디지털 신호로 전환하여 그 전환된 신호를 타이머 모듈에서 읽어 들여 신호들의 시간차를 측정하여 표시하여 나노초(Nano Second) 단위의 시간을 측정하는 방법을 제안 하고자 한다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.759-762
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• 2003

The epitaxially grown Mg-doped GaN thin film was prepared by MOCVD (Metal Organic Chemical Vapor Deposition) for a SAW(Surface Acoustic Wave) filter. Mg-doped GaN thin film had enough properties for a SAW filter which include crystallinity and morphology. The surface morphology and crystalline of the Mg-doped GaN thin films were characterized using AFM and an X-ray rocking curve. The SAW filter, which was fabricated by lift-off process and frequency response, was measured by HP 8753C network analyzer. Center frequency was 96.687 MHz and SAW velocity was 5801 m/s when wavelength(λ) was 60${\mu}{\textrm}{m}$. Insertion loss was over -10 dB, Q was factor over 200, and side lobe attenuation was over 22 dB which was suitable for use as a SAW filter. Electro-mechanical coupling coefficient (k$^2$) was calculated from the measured data. k$^2$ was from 1 % to 1.44 %. The fabricated SAW filter using Mg-doped GaN/sapphire structure has good qualities as a filter and will be used as a SAW filter for operating RF frequency.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.13-16
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• 2009

In this study, AlN thin films were deposited on a polycrystalline (poly) 3C-SiC buffer layer for surface acoustic wave (SAW) applications using a pulsed reactive magnetron sputtering system. AFM, XRD and FT-IR were used to analyze structural properties and preferred orientation of the AlN/3C-SiC thin film. Suitability of the film in SAW applications was investigated by comparing the SAW characteristics of an interdigital transducer (IDT)/AlN/3C-SiC structure with the IDT/AIN/Si structure at 160 MHz in the temperature range $30-150^{\circ}C$. These experimental results showed that AlN films on the poly 3C-SiC layer were highly (002) oriented. Furthermore, the film showed improved temperature stability for the SAW device, $TCF\;=\;-18\;ppm//^{\circ}C$. The change in resonance frequency according to temperature was nearly linear. The insertion loss decrease was about $0.033dB/^{\circ}C$. However, some defects existed in the film, which caused a slight reduction in SAW velocity.

• 한국전기전자재료학회논문지
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• 제14권5호
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• pp.435-443
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• 2001

As power durable RF SAW filters, AL-(0∼2wt%)Cu alloy multi-layered thin electrodes were deposited on 42° LiTaO$_3$ piezoelectric substrates by magnetron sputtering process, and then ladder-type RF SAW filters, satisfying the electrical specification of CDMA transmission band, were fabricated through optimizing SAW resonator structures. The temperature of film electrodes in SAW filter was increased with RF power, and reached the maxima to cause a failure of SAW filters at the cut-off frequencies of the RF filter band. As RF power increases, the electrodes of Al-Cu alloy showed higher power durability than that of pure Al. The multi-layer laminated film of Al-1wt.% Cu/Cu/Al-1wt%Cu resulted in the best power durability up to 4W of RF power. Every film electrode, however, was destroyed within seconds whenever applying a critical RF power to SAW filters, regardless of the composition and structure of film electrodes. The breakdown of film electrodes under FR power seems to believe due to the fatigue of electrodes caused by repetitive cyclic stress of surface acoustic wave, which is amplified as RF power increases.

• 한국산학기술학회논문지
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• 제20권12호
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• pp.390-397
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• 2019

현대 제조 공업이 고효율, 고정밀도와 경제적인 방향으로 발전 하면서 금속을 절단하는 띠톱 기계는 이미 철강, 기계, 자동차, 조선, 석유, 광산, 항공 우주 등 다양한 영역에서 광범위 하게 활용 되고 있다. 하지만 기존의 띠톱 기계들은 경험적으로 설계 되어져 왔으며 따라서 낮은 수명, 톱질 동작 상태에서 낮은 정밀도 및 저효율을 문제와 높은 제조원가 문제를 가지고 있다. 본 논문에서는 띠톱의 역학적 해석을 통해 띠톱 톱대의 설계 파라미터를 개선하는 방법을 제시 하였다. 실제로 빈번하게 사용 되고 있는 띠톱 기계를 모델링 하여 응력 분석, 피로해석을 시행 하였으며 이에 따라 톱대의 상세한 설계 파라미터를 도출 하였다. 그 결과 피로 강도가 피로 요구 사항을 만족 시키고 띠톱 기계의 정밀도와 효율이 크게 향상 되는 것을 확인할 수 있었다.

• 한국음향학회지
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• 제9권4호
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• pp.18-32
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• 1990

최근 신호 처리 기기와 센서로서 각광을 받고 있는 SAW Device 는 때론 목적에 따라 수중에서 사용해야 할 때가 있다. 그러나 유체내의 고체 표면을 전파하는 표면파의 경우, 유체내로의 에너지 손실로 인해 설계상에 많은 어려움을 주고 있다. 따라서 본 연구에서는 이러한 어려움을 극복할 수 있는 최적 설계법으로서, 컴퓨터 모형해석을 통해 수중에서 압전물질에 의한 표면파의 최대 발진 효율, 최소 전파 감쇄율, 그리고 pure mode 전파를 이룰 수 있는 SAW Device 의 최적 geometry, 즉 초적 압전 결정 평면, 표면과 전파 방향, 그리고 무차원 전파 계수 들을 구하였다. 본 논문에서는 표면파가 전파하는 고체 재료로서 PZT와 PVDF 적층, 그리고 쇠 하부층을 사용하였으나, 이 설계법은 임의의 유체층과 고체층의 조합에도 적용할 수 있다. 동일한 기술은 수중음향 계측기, antifouling, 그리고 산업 및 의료 분야 등에 쓰이는 센서와 발진기의 설계에도 바로 응용할 수 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.80-80
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• 2000

Surface acoustic wave (SAW) devices have become more important as mobile telecommunication systems need h호-frrequency, low-loss, and down-sized components. Higher-frequency SAW divices can be more sasily realized by developing new h호-SAW-velocity materials. The ZnO/diamond/Si multilasyer structure is one of the most promising material components for GHz-band SAW filters because of its SAW velocity above 10,000 m/sec. Silicon carbide is also a potential candidate material for high frequency, high power and radiation resistive electronic devices due to its superior mechanical, thermal and electronic properties. However, high price of commercialized 6- or 4H-SiC single crystalline wafer is an obstacle to apply SiC to high frequency SAW devices. In this study, single crystalline 3C-SiC thin films were grown on Si (100) by MOCVD using bis-trimethylsilymethane (BTMSM, C7H20Si7) organosilicon precursor. The 3C-SiC film properties were investigated using SEM, TEM, and high resolution XRD. The FWHM of 3C-SiC (200) peak was obtained 0.37 degree. To investigate the SAW propagation characteristics of the 3C-SiC films, SAW filters were fabricated using interdigital transducer electrodes on the top of ZnO/3C-SiC/Si(100), which were used to excite surface acoustic waves. SAW velocities were calculated from the frequency-response measurements of SAW filters. A generalized SAW mode. The hard 3C-SiC thin films stiffened Si substrate so that the velocities of fundamental and the 1st mode increased up to 5,100 m/s and 9,140 m/s, respectively.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.31-34
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• 1998

CDMA base station SAW filter has been designed and fabricated successfully. Through the computer simulation, SAW filter is designed to have center frequency of 69.99MHz, ripples lower than 0.7dB and rejection level lower than 50dB. To obtain low noise band pass SAW filter, Input electrode has a apodization type and output electrode has a withdrawal type. For the fabrication of the SAW filter, Al thin film is deposited to the quartz substrates. The fabricated SAW filter has center frequency of 70.5MHz, ripples of 1dB and rejection level of 45dB.

• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.647-655
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• 2003

Commonly used SAW duplexers have a difficulty on manufacture so that a transmission line is printed on the package or an LTCC multi-layer is needed because a quarter-wave transmission line which is a kind of an isolation network is applied to the SAW duplexers. In this study, new structures of one chip type SAW duplexers are proposed. In the proposed structure, Tx and Rx SAW ladder filters and isolation networks are located on a single 36LiTaO$_3$ piezoelectric substrate. The manufacture process is very simple than commonly used product. It is possible to improve tile performance by means of optimizing the micro-strip line lumped elements. It is easy to integrate and modulate with other surrounding components. The optimal design techniques can be applied to other kind of multi-port devices.

• 전기의세계
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• 제30권3호
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• pp.152-158
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• 1981

본고의 내용은 다음과 같다. 1. SAW와 SAW의 전파 2. 여기 및 검출(ID transducer)