• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.9
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• pp.121-127
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• 1995

We have analyzed the double insulating layer consisting of anodic oxide and ZnS through TEM experiments. The use of double insulating layer for HgCdTe surface passivation is one of the promising passivation method which has been recently studied deeply and the double insulating layer is formed by the evaporation of ZnS on the top of anodic oxide layer grown in H$_{2}$O$_{2}$ electrolyte. The structure of anodic oxide layer on HgCdTe is amorphous but the structure of oxide layer after the evaporation of ZnS has been changed to micro-crystalline. The interface layer of 150.angs. thickness has been found between ZnS and anodic oxide layer and is estimated to be ZnO layer. The results of analysis on the chemical components of ZnS, the interface layer and anodic oxide layer have showed that Zn has diffused into the anodic oxide layer deeply while Hg has been significantly decreased from HgCdTe bulk to the top of oxide layer. The formation of ZnO interface layer and the change of structure of anodic oxide layer after the evaporation of ZnS are estimated to be defects or to induce the defects which might possibly affect the increase of the positive fixed charges shown in C-V measurements of HgCdTe MIS.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.5C
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• pp.485-497
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• 2009

In this paper, we described DVB-S2 system for mobility. cross layer coding technique are needed to maintain the performance in deep fading channel. Cross layer coding is divided into two kinds of level. First level is Physical layer coding and, second layer is link layer or upper layer coding. Fixed on DVB-S2 short frame coding method as a physical layer, we simulated the various coding method as an upper layer coding. Furthermore, we analyzed the performance of each coding method on according to mobile vehicle speed, data rate, interleaving memory size, and IP packet size.

• Progress in Superconductivity
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• v.1 no.1
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• pp.51-55
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• 1999

A Ni/Ag/Stainless steel 310S(SS310S) multi-layer sheet has been fabricated by a combination of vacuum brazing, cold rolling and texture annealing processes. After heat-treating the thin Ni/Ag/SS310S multi-layer sheet at $900^{\circ}C$ for 2h, development of (100)<001>cube texture on Ni surface was revealed by (111) pole figure. Quantitative chemical analysis was made by EPMA for the cross-section of the Ni/Ag/SS310S multi-layer sheet. EPMA results showed that Ag diffusion into the Ni layer, which may suppress the cube texture development, was negligible. A small amount of Cr atoms were detected in the Ni layer. It showed that Ag can be used as a chemical barrier of alloying element atoms in Ni layer for the Ni/Ag/SS310S multi-layer sheet and a strong cube texture was developed for the Ni layer in the Ni/Ag/SS310S multi-layer sheet.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.5
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• pp.795-801
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• 1994

The BiPbSrCaCuO superconductor was fabricated by diffusion of The dual layer composed of SrS12TCaS11TCuS12TOS1xT in upper layer and BiS12TPbSI0.3TCuS12TOS1yT in lower layer, and varified growh-mechanism of BiPbSrCaCuO superconducting phase. And, we produced optimum conditions of spread volume and each stage of sintering time were upper layer:Lower layer=1:0.2, 1:0.4, 1:0.6 and 24hr., 120hr., 210hr. From the result, the optimum conditions are spread volume(Upper layer:Lower layer=1:0.6), sintering time(210hrs.) at 820$^{\circ}C$.The BiPbSrCaCuO superconductor, fabricated optimum condition, showed zero resistance at critical temperature of 70k.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.10
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• pp.1075-1085
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• 2008

Recently, it is studied actively that DVB-S2 for mobility standard(DVB-S2M) is combined with DVB-H, DVB-T and conventional DVB-S2 standard for continuous satellite broadcasting and internet service. Especially, overcoming deep fading by tunnel is main subject. For overcoming deep fading, DVB-S2M proposed cross layer system is consist of upper layer and physical layer. Thus, this paper proposed optimal upper layer coding system fixing the physical layer coding under the simulation results by coding methods, train speed, data rate, interleaver size and IP packet size.

• Korean Journal of Optics and Photonics
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• v.2 no.3
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• pp.115-120
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• 1991

The effect of ZnS buffer layer on the brightness and luminous efficiency of SrS : Ce, Cl thin film EL device is investigated. The driving voltage is 210V for the cell with ZnS buffer layer, but 220V without ZnS buffer layer. The frequency range is 500 Hz-20 kHz. The. brightness is proportional to the product of the frequency and the transferred charge density within measured range. The luminous efficiency is independent on the frequency and/or driving voltage. By using the ZnS buffer layer, the luminescence characteristics of active layer is improved. The experimental data shows 0.12 Im/W of the luminous efficiency for the device with ZnS buffer layer, but 0.061m/W without ZnS buffer layer.

• Journal of Digital Convergence
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• v.11 no.5
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• pp.313-318
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• 2013

QoS in wireless multimedia sensor networks is an important issue to enhance streaming media service. This paper proposes a new 2-layer based QoS evaluation scheme for enhancing the streaming media QoS of wireless multimedia sensor networks. The proposed scheme performs the fuzzy relevance to control the streaming between application layer and network layer, and it performs 2-layer mapping process to enhance the transmission reliability and throughput. The simulation results show that the proposed scheme achieves improved performance in packet control ratio, transmission reliability, and delay overhead ratio compared with those of other existing schemes.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.117-122
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• 1994

The role of ZnS buffer layer not only suppresses chemical reactions between emission material and insulating material but also alters the luminescence and the crystallinity of the emission layer, if ZnS buffer layer was sandwiched between emission layer and insulating layer of electroluminescent device. In this research, we fabricated ZnS thin film with rf magnetron sputter system by varying rf power 100, 200W, substrate temperature 100, 150, 200, 250.deg. C and post-annealing temperature 200, 300, 400, 500.deg. C and analysed X-ray diffraction pattern, transmission spectra and cross section by SEM photograph for seeking the optimal crystallization condition of ZnS buffer layer. As a result, increasing the rf power, the crystallinity of ZnS thin film was improved. It was found that the ZnS thin film had better properties than anything else when fabricated with the following conditions ; rf power 200W, substrate temperature 150.deg. C, and post-annealing temperature 400.deg. C. ZnS thin film had the transmittance more than 80% in visible range. So it is suitable to use as a buffer layer of electroluminescent devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.8
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• pp.575-579
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• 2012

Heteroepitaxial InP films have been grown on GaAs substrates to study the effects of the nucleation layer's surface roughness on the epitaxial layer's quality. For this, InP nucleation layers were grown at $400^{\circ}C$ with various ethyldimethylindium (EDMIn) flow rates and durations of growth, annealed at $6200^{\circ}C$ for 10 minutes and then InP epitaxial layers were grown at $550^{\circ}C$. It has been found that the nucleation layer's surface roughness is a critical factor on the epitaxial layer's quality. When a nucleation layer is grown with an EDMIn flow rate of 2.3 ${\mu}mole/min$ for 12 minutes, the surface roughness of the nucleation layer is minimum and the successively grown epitaxial layer's qualities are comparable to those of the homoepitaxial InP layers reported. The minimum full width at half maximum of InP (200) x-ray diffraction peak and that of near-band-edge peak from a 4.4 K photoluminescence are 60 arcmin and 6.33 meV, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.437-438
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• 2008

박막태양전지에서 p-layer, i-layer, n-layer의 thickness와 doping concentration은 가장 기본이 되는 요소이다. 각 layer에서 위 두 가지 요소를 ASA simulator를 이용해서 높은 효율을 갖는 박막태양전지를 설계하기 위해 조절하였다. Simulation결과 p-layer의 thickness는 $9.5*10^{-9}m$, doping concentration은 0.2eV, i-layer의 thickness는 $4.535*10^{-7}m$, n-layer의 thickness는 $2*10^{-8}m$, doping concentration 은 0.1eV에서 최종 11.48%의 효율을 얻을 수 있었다. 본 연구를 통하여 높은 효율의 박막태양전지 설계 시에 도움이 될 수 있을 것이다.