• Title/Summary/Keyword: S-Parameter Measurement

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The defect detection circuit of an electronic circuit through impedance change detection that induces a change in S-parameter (S-parameter의 변화를 유도하는 임피던스 변화 감지를 통한 전자회로의 결함검출회로)

  • Seo, Donghwan;Kang, Tae-yeob;Yoo, Jinho;Min, Joonki;Park, Changkun
    • Journal of IKEEE
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    • v.25 no.4
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    • pp.689-696
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    • 2021
  • In this paper, in order to apply Prognostics and Health Management(PHM) to an electronic system or circuit, a circuit capable of detecting and predicting defect characteristics inside the system or circuit is implemented, and the results are described. In the previous study, we demonstrated that the frequency of the amplitude of S-parameter changed as the circuit defect progressed. These characteristics were measured by network analyser. but in this study, even if the same defect detection method is used, a circuit is proposed to check the progress of the defect, the remaining time, and the occurrence of the defect without large measurement devices. The circuit is designed to detect the change in impedance that generates changes of S-parameter, and it is verified through simulation using the measurement results of Bond-wires.

Measurement of Noise Wave Correlation Matrix for On-Wafer-Type DUT Using Noise Power Ratios (잡음전력비를 이용한 온-웨이퍼형 DUT의 잡음상관행렬 측정)

  • Lee, Dong-Hyun;Yeom, Kyung-Whan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.30 no.2
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    • pp.111-123
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    • 2019
  • In this paper, we propose a method for defining the input termination for on-wafer-type device under test (DUT) measurement. Using the newly defined input termination and noise wave correlation matrix (NWCM) measurement method based on noise power ratio, the NWCM of the on-wafer-type DUT was measured. We demonstrate a noise measurement configuration that includes wafer probes and bias tees to measure the on-wafer DUT. The S-parameter of the adapter that combines the bias tee, probe, and a line terminated by open is required to define the input termination for on-wafer DUT measurement. To measure the S-parameter of the adapter, a 2-port S-parameter measurement method using 1-port measurement is introduced. Using the measured S-parameters, a method for defining the new input termination for on-wafer-type DUT measurement is applied. The proposed method involves the measurement of the NWCM of the chip with a 1.5 dB noise figure. The noise parameters of the chip were obtained using the measured NWCM. The results indicate that the obtained values of the noise parameters are similar to those mentioned on a datasheet for the chip. In addition, repeated measurements yielded similar results, thereby confirming the reliability of the measurements.

Performance Analysis of the UPC/NPC Algorithm for Guaranteed QoS in ATM Networks

  • Kim, Yong-Jin;Kim, Jang-Kyung;Lee, Young-Hee;Park, Chee-Hang
    • ETRI Journal
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    • v.20 no.3
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    • pp.251-271
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    • 1998
  • It is well known that if usage parameter control/network parameter control (UPC/NPC) functions are used together with a cell loss priority control scheme in ATM networks, the measurement phasing problem can occur. This makes it difficult for a network provider to define and commit the cell loss ratio as a QoS parameter. To solve the problem, we propose a new UPC/NPC algorithm. By using the proposed UPC/NPC algorithm, we can define the cell loss ratios for CLP = 0 and CLP = 0+1 cell streams without the measurement phasing problem under any conditions. We analyzed the performance of the proposed UPC/NPC algorithm. Using a discrete time model for the UPC/NPC architecture with a discrete-time semi-Markov process (DSMP) input model, we obtained the cell discarding probabilities of CLP = 0 and CLP = 0+1 cells streams and showed that more CLP = 0 cells are accepted compared to what was proposed in ITU-T.

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Measurement and Analysis of Gate Finger Number Dependence of Input Resistance for Sub-micron MOSFETs (Sub-micron MOSFET을 위한 입력 저항의 게이트 핑거 수 종속성 측정 및 분석)

  • Ahn, Jahyun;Lee, Seonghearn
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.12
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    • pp.59-65
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    • 2014
  • Two input resistances converted from $S_{11}$-parameter and $Z_{11}$-parameter of MOSFETs with various gate finger numbers Nf were measured in low frequency region. The 1/Nf dependent input resistance from $S_{11}$-parameter exhibits much lower values than that from $Z_{11}$-parameter in the range of $Nf{\leq}64$. This 1/Nf dependence was theoretically verified by using Nf dependent nonlinear equation derived from a MOSFET equivalent circuit.

Method for Measuring Dielectric Constant of Planar Dielectric Substrate (판형 유전체의 유전율 측정 방법)

  • Lee, Chang-Hyun;Kwon, Taek-Sun;Lee, Jeong-Hae
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.29 no.10
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    • pp.799-804
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    • 2018
  • In this paper, a method for measuring the dielectric constant of a planar dielectric substrate using the free space material constant measurement method in a general measurement environment is proposed. Two horn antennas and a network analyzer were used for S-parameter measurement and the transmission and reflection coefficients of a planar dielectric substrate were calculated from the measurement results. To obtain a reliable dielectric constant in a low-precision-measurement environment, only the magnitude of the transmission coefficient, which has a small error due to the measurement environment, is used for dielectric constant estimation. Finally, the dielectric constant is determined by comparing the measured results at different frequencies.

The Effect of Methods of Estimating the Ability on The Accuracy and Items Parameters According to 3PL Model

  • Almaleki, Deyab A.;Alomrany, Ahoud Ghazi
    • International Journal of Computer Science & Network Security
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    • v.21 no.7
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    • pp.93-102
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    • 2021
  • This study aimed to test method on the accuracy of estimating the items parameters and ability, using the Three Parameter Logistic. To achieve the objectives of the study, an achievement test in chemistry was constructed for third-year secondary school students in the course of "natural sciences". A descriptive approach was employed to conduct the study. The test was applied to a sample of (507) students of the third year of secondary school in the "Natural Sciences Course". The study's results revealed that the (EAP) method showed a higher degree of accuracy in the estimation of the difficulty parameter and the abilities of persons higher than the MML method. There were no statistically significant differences in the accuracy of the parameter estimation of discrimination and guessing regarding the difference of the two methods: (MML) and (EAP).

Equivalent Circuit Model for Four Port Connector System (4포트 커넥터 시스템의 등가회로 변환에 관한 연구)

  • Shim, Min-Kyu;Kim, Jong-Min;Nah, Wan-Soo
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.6
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    • pp.1105-1110
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    • 2007
  • This paper describes an equivalent circuit modeling of 4-port connector system. A coupled transmission line was designed and fabricated, mimicking a 4-port connector system, and then S-parameters were measured using 4 port VNA (Vector Network Analyzer). The S-parameters from measurement and from Full-wave simulator coincided quite nice. By using these S parameters, an equivalent circuit parameters for a 4-port system was obtained. The time domain response from the equivalent circuit model matched to the signals, which was measured using TDR(Time Domain Reflectometry) meter. We were also convinced that there should be enough bandwidth to get a meaningful time domain result from Fourier inverse transformation of the S parameters. In addition, we applied the conversion algorithm to the 4-port connector system, which calculates the S-parameters of a 4 port system using the data from a 2-port VNA with the other ports open. Comparison of the two data, one from measurement and the other one from the conversion algorithm, was made in this manuscript.

Comments on Functional Relations in the Parameters of Multivariate Autoregressive Process Observed with Noise

  • Jong Hyup Lee;Dong Wan Shin
    • Communications for Statistical Applications and Methods
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    • v.2 no.2
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    • pp.94-100
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    • 1995
  • Vector autoregressive process disturbed by measurement error is a vector autoregressive process with nonlineat parametric restrictions on the parameter. A Newton-Raphson procedure for estimating the parameter which take advantage of the information contained in the restrictions is proposed.

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Standard Measurement Procedure for Soil Radon Exhalation Rate and Its Uncertainty

  • Seo, Jihye;Nirwono, Muttaqin Margo;Park, Seong Jin;Lee, Sang Hoon
    • Journal of Radiation Protection and Research
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    • v.43 no.1
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    • pp.29-38
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    • 2018
  • Background: Radon contributing about 42% of annual average dose, mainly comes from soil. In this paper, standard measurement procedures for soil radon exhalation rate are suggested and their measurement uncertainties are analyzed. Materials and Methods: We used accumulation method for estimating surface exhalation rate. The closed-loop measurement system was made up with a RAD7 detector and a surface chamber. Radon activity concentrations in the system were observed as a function of time, with data collection of 5 and 15-minute and the measurement time of 4 hours. Linear and exponential fittings were used to obtain radon exhalation rates from observed data. Standard deviations of measurement uncertainties for two approaches were estimated using usual propagation rules. Results and Discussion: The exhalation rates (E) from linear approach, with 30 minutes measurement time were $44.8-48.6mBq{\cdot}m^{-2} {\cdot}s^{-1}$ or $2.14-2.32atom{\cdot}cm^{-2}{\cdot}s^{-1}$ with relative measurement uncertainty of about 10%. The contributions of fitting parameter A, volume (V) and surface (S) to the estimated measurement uncertainty of E were 59.8%, 30.1% and 10.1%, in average respectively. In exponential fitting, at 3-hour measurement we had E ranged of $51.6-69.2mBq{\cdot}m^{-2} {\cdot}s^{-1}$ or $2.46-3.30atom{\cdot}cm^{-2}{\cdot}s^{-1}$ with about 15% relative uncertainty. Fitting with 4-hour measurement resulted E about $51.3-68.2mBq{\cdot}m^{-2} {\cdot}s^{-1}$ or $2.45-3.25atom{\cdot}cm^{-2}{\cdot}s^{-1}$ with 10% relative uncertainty. The uncertainty contributions in exponential approach were 75.1%, 13.4%, 8.7%, and 2.9% for total decay constant k, fitting parameter B, V, and S, respectively. Conclusion: In obtaining exhalation rates, the linear approach is easy to apply, but by saturation feature of radon concentrations, the slope tends to decrease away from the expected slope for extended measurement time. For linear approach, measurement time of 1-hour or less was suggested. For exponential approach, the obtained exhalation rates showed similar values for any measurement time, but measurement time of 3-hour or more was suggested for about 10% relative uncertainty.

High-Frequency Parameter Extraction of Insulating Transformer Using S-Parameter Measurement (S-파라메타를 이용한 절연 변압기의 고주파 파라메타 추출)

  • Kim, Sung-Jun;Ryu, Soo-Jung;Kim, Tae-Ho;Kim, Jong-Hyeon;Nah, Wan-Soo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.25 no.3
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    • pp.259-268
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    • 2014
  • In this paper, we suggest a method of extracting circuit parameters of the insulating transformer using S-parameter measurement, especially in high frequency range. At 60 Hz, conventionally, no load test and short circuit test are used to extract the circuit parameters. In this paper S-parameters measured from VNA(Vector Network Analyzer) were used to extract the transformer parameters using data fitting method (optimization). The S-parameters from the equivalent circuit using the extracted parameters showed good agreement with those from measurement. Furthermore, the transformer secondary voltages from the equivalent circuit model also coincide quite exactly to the measured secondary voltages in sinusoidal forms. Finally we assert that the proposed method to extract the parameters for the insulating transformer using S-parameter is valid especially in high frequency.