• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1296-1299
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• 2004

MIM capacitor has been investigated for the next generation DRAM. Conventional poly-Si bottom electrode cannot satisfy the requirement of electrical properties and comparability to the high k materials. New bottom electrode material such as ruthenium has been suggested in the fabrication of MIM structure capacitor. However, the ruthenium has to be planarized due to the backend scalability. For the planarization CMP has been widely used in the manufacture of integrated circuit. In this research, ruthenium thin film was Polished by CMP with cerium ammonium nitrate (CAN)base slurry. HNO3 was added on the CAN solution as an additive. In the various concentration of chemical and alumina abrasive, ruthenium surface was etched and polished. After static etching and polishing, etching and removal rate was investigated. Also microroughness of surface was observed by AFM. The etching and removal rate depended on the concentration of CAN, and HNO3 accelerated the etching and polishing of ruthenium. The reasonable removal rate and microroughness of surface was achieved in the 1wt% alumina slurry.

• Bulletin of the Korean Chemical Society
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• v.25 no.6
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• pp.931-933
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• 2004

• Journal of the Korean Ceramic Society
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• v.19 no.2
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• pp.145-151
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• 1982

Many materials such as silica gel, metallic oxide, activated alumina and alkaline earth metal carbonates were employed as filter media for gaseous oxides of ruthenium volatilized during high level radioactive waste processing. The adsorption efficiency of ruthenium on these materials was evaluated. For the purpose of observing behavior of ruthenium oxides, thermogravimetric analysis of ruthenium oxide in a stream of oxygen was carried out. The rate of volatilization was proportional to the square root of oxygen partial pressure, and increased exponentially with temperature. At $650^{\circ}C$, gaseous ruthenium oxides showed a strongly marked effect of deposition. Of all the materials available, calcium oxide proved to be the best that could be used to adsorb ruthenium.

• Journal of Radiation Protection and Research
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• v.15 no.2
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• pp.7-16
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• 1990

The sorption of radioactive cobalt and ruthenium on alumina, silica gel, zeolite 3A, kaolin and Na-bentonite has been studied as a function of pH. nuclide concentration and ionic strength. Retardation factor for cobalt and ruthenium on soil minerals was determined through porosity measurement. Hydrolysed species, cobalt and ruthenium interact with solid surfaces by physical adsorption processes. Freundlich sorption isotherms for cobalt and ruthenium are effectively linear. The sorption decreases with increasing ionic strength for cobalt and ruthenium. The effect of increasing porosity on the retardation factor countered the effect of a significant increase in the distribution coefficient.

• Clean Technology
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• v.25 no.3
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• pp.256-262
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• 2019

Hydroxylammonium nitrate (HAN)-based liquid propellants are attracting attention as environmentally friendly propellants because they are not carcinogens and the combustion gases have little toxicity. The catalyst used to decompose the HAN-based liquid propellant in a thruster must have both low temperature activity and high heat resistance. The objective of this study is to prepare an Ru/alumina/metal foam catalyst by supporting alumina slurry on the surface of NiCrAl metal foam using a washing coating method and then to support a ruthenium precursor thereon. The decomposition activity of a HAN aqueous solution of the Ru/alumina/metal foam catalyst was evaluated. The effect of the number of repetitive coatings of alumina slurry on the physical properties of the alumina/metal foam was analyzed. As the number of alumina wash coatings increased, mesopores with a diameter of about 7 nm were well-developed, thereby increasing the surface area and pore volume. It was optimal to repeat the wash coating alumina on the metal foam 12 times to maximize the surface area and pore volume of the alumina/metal foam. Mesopores were also well developed on the surface of the Ru/alumina/metal foam catalyst. It was found that the metal form itself without the active metal and alumina can promote the decomposition reaction of the HAN aqueous solution. In the case of the Ru/alumina/metal foam-550 catalyst, the decomposition onset temperature was significantly lowered compared with that of the thermal decomposition reaction, and ${\Delta}P$ could be greatly increased in the decomposition of the HAN aqueous solution. However, when the catalyst was calcined at $1,200^{\circ}C$, the catalytic activity was lowered inevitably because the surface area and pore volume of the catalyst were drastically reduced and Ru was sintered. Further research is needed to improve the heat resistance of Ru/alumina/metal foam catalysts.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.9
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• pp.803-809
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• 2005

Cerium ammonium nitrate (CAN) and nitric acid was used an etchant and an additive for Ru etching and polishing. pH and Eh values of the CAN and nitric acid added chemical solution satisfied the Ru etching condition. The etch rate increased linearly as the concentration of CAN increased. Nitric acid added solution had the high etch rate. But micro roughness of etched surfaces was not changed before and after etching, The removal rate of Ru film was the highest in $1wt\%$ abrasive added slurry, and not increased despite the concentration of alumina abrasive increased to $5wt\%$. Even Ru film was polished by only CAN solution due to the friction. The highest removal rate of 120nm/min was obtained in 1 M nitric acid and $1wt\%$ alumina abrasive particles added slurry. The lowest micro roughness value was observed in this slurry after polishing. From the XPS analysis of etched Ru surface, oxide layer was founded on the etched Ru surface. Therefore, Ru was polished by chemical etching of CAN solution and oxide layer abrasion by abrasive particles. From the result of removal rate without abrasive particle, the etching of CAN solution is more dominant to the Ru CMP.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.57-58
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• 2006

In MIM (metal insulator metal) capacitor, Ru (ruthenium) has been suggested as new bottom electrode due to its excellent electrical performance, a low leakage of current and compatibility to the high dielectric constant materials. In this case of Ru bottom electrode, CMP (chemical mechanical planarization) process was needed m order to planarize and isolate the bottom electrode. In this study, the effect of chemical A on polishing and etching behavior was investigated as functions of chemical A concentration, abrasive particle and pressure. Chemical A was used as oxidant and etchant. The thickness of passivation layer on the treated Ru surface increased with the increase of chemical A concentration. The etch rate and removal rate of Ru were increased by the addition of chemical A. The removal rate was highest m slurry of pH 9 with the addition of 0.1 M chemical A and 2 wt% alumina at 4 psi. The maximum removal rate is about 80 nm/min.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.529-529
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• 2007

Ruthenium (Ru) is a white metal and belongs to platinum group which is very stable chemically and has a high work function. It has been widely studied to apply Ru as an electrode material in memory devices and a Cu diffusion barrier metal for Cu interconnection due to good electrical conductivity and adhesion property to Cu layer. To planarize deposited Ru layer, chemical mechanical planarization(CMP) was suggested. However, abrasive particle can induce particle contamination on the Ru layer surface during CMP process. In this study, zeta potentials of Ru and interaction force of alumina particles with Ru substrate were measured as a function of pH. The etch rate and oxidation behavior were measured as a function of chemical concentration of several organic acids and other acidic and alkaline chemicals. PRE (particle removal efficiency) was also evaluated in cleaning chemical.

• Clean Technology
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• v.28 no.3
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• pp.218-226
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• 2022

As a result of the recent social transformation towards a hydrogen economy and carbon-neutrality, the demands for hydrogen energy have been increasing rapidly worldwide. As such, eco-friendly hydrogen production technologies that do not produce carbon dioxide (CO₂) emissions are being focused on. Among them, ammonia (NH₃) is an economical hydrogen carrier that can easily produce hydrogen (H₂). In this study, Ru/Al₂O₃ catalyst coated onmetallic monolith for hydrogen production from ammonia was prepared by a dip-coating method using a catalyst slurry mixture composed of Ru/Al₂O₃ catalyst, inorganic binder (alumina sol) and organic binder (methyl cellulose). At the optimized 1:1:0.1 weight ratio of catalyst/inorganic binder/organic binder, the amount of catalyst coated on the metallic monolith after one cycle coating was about 61.6 g L^-1. The uniform thickness (about 42 ㎛) and crystal structure of the catalyst coated on the metallic monolith surface were confirmed through scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis. Also, a numerical optimization regression equation for NH3 conversion according to the independent variables of reaction temperature (400-600 ℃) and gas hourly space velocity (1,000-5,000 h^-1) was calculated by response surface methodology (RSM). This model indicated a determination coefficient (R²) of 0.991 and had statistically significant predictors. This regression model could contribute to the commercial process design of hydrogen production by ammonia decomposition.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.5
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• pp.218-227
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• 2021

A thick film NTC thermistor for low temperature co-firing was manufactured by printing and sintering a paste prepared using NTC powder of Mn_1.5Ni_0.4Co_0.9Cu_0.4O₄ composition, lead free frit, and RuO₂ on a 96 % alumina substrate. The effect of frit and RuO₂ on the electrical properties of thick film NTC thermistor was studied. The resistance of the thick film NTC thermistor was higher than that of the bulk phase sintered at the same temperature, but it was found that the negative resistance temperature characteristic appeared more clearly and linearly in the resistance - temperature characteristic. On the other hand, the area resistance decreased as the sintering temperature increased, and the area resistance increased as the amount of frit added increased. The B constant of the thick film NTC thermistor was 3000 K or higher. Among them, it was found that the B constant of the thick film NTC thermistor made of paste with 5 wt% of frit added and sintered at 900℃ showed the highest B constant. Also, it can be seen that the area resistance decreased with the addition of RuO₂, and the change in the area resistance decrease of the thick film NTC thermistor obtained by sintering the paste containing 5 wt% of RuO₂ at 900℃ is the most obvious.