• Progress in Superconductivity
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• v.13 no.3
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• pp.163-168
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• 2012

The effects of Ta substitution on the superconducting and magnetic properties of the $(Ru_{1-x}Ta_x)Sr_2(Gd_{1.4}Ce_{0.6})Cu_2O_z(0{\leq}x{\leq}0.5)$ system have been investigated. The X-ray diffraction measurements indicate that the Ta ion replaces Ru sites up to x = 0.4. It is found that the Ta substitution for Ru significantly reduces the weak-ferromagnetic component of the field-cooled magnetic susceptibility without an appreciable change of room temperature thermopower at lower Ta doping level below x = 0.2. The resistive transition temperature tends to decrease monotonically from 27 K for the x = 0 sample to 16 K (9 K) for the x = 0.4 (x = 0.5) sample. These results suggest that superconductivity of the $(Ru_{1-x}Ta_x)Sr_2(Gd_{1.4}Ce_{0.6})Cu_2O_z$ compound is not significantly affected by the magnetic state of the Ru sublattice. The experimental results are discussed in connection with previous reports on the effects of Nb substitution.

• Progress in Superconductivity
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• v.13 no.1
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• pp.12-17
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• 2011

We investigated the effects of Ba and Cu co-substitution on the structural and superconducting properties of ($Ru_{1-y}Cu_y$)($Sr_{1.67-x}Ba_xEu_{0.33}$)($Eu_{1.34}Ce_{0.66}$)$Cu_2O_z$ samples. X-ray diffraction(XRD) reveals that single-phase samples can be obtained in the range from x = 0.1 to 0.2 for ($Ru_{0.5}Cu_{0.5}$)($Sr_{1.67-x}Ba_xEu_{0.33}$)($Eu_{1.34}Ce_{0.66}$)$Cu_2O_z$ and from y = 0.25 to 0.5 for ($Ru_{1-y}Cu_y$)($Sr_{1.47}Ba_{0.2}Eu_{0.33}$)($Eu_{1.34}Ce_{0.66}$)$Cu_2O_z$, respectively. All samples with compositions of ($Ru_{0.5}Cu_{0.5}$)($Sr_{1.67-x}Ba_xEu_{0.33}$) ($Eu_{1.34}Ce_{0.66}$)$Cu_2O_z$ (x = 0 - 0.33) show superconducting transition behavior and the onset transition temperature decreases slightly with increasing x in consistent with the change of hole concentration estimated from room temperature thermoelectric power measurements. The XRD and resistivity measurements for the ($Ru_{1-y}Cu_y$)($Sr_{1.47}Ba_{0.2}Eu_{0.33}$)($Eu_{1.34}Ce_{0.66}$) $Cu_2O_z$ system indicate that the partial substitution of Cu for Ru is necessary to form phase pure samples, but result in a small change in transition temperature in the single-phase region from x = 0.25 to 0.5.

• Journal of Korean Society of Water and Wastewater
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• v.31 no.5
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• pp.373-381
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• 2017

$RuO_2$ is a common active component of Dimensionally Stable Anodes (DSAs) for chlorine evolution that can be used in wastewater treatment systems. The recent improvement of chlorine evolution using nanostructures of $RuO_2$ electrodes to increase the treatment efficiency and reduce the energy consumption of this process has received much attention. In this study, $RuO_2$ nanorod and nanosheet electrodes were simply fabricated using the sol-gel method with organic surfactants as the templates. The obtained $RuO_2$ nanorod and nanosheet electrodes exhibit enhanced electrocatalytic activities for chlorine evolution possibly due to the active surface areas, especially the outer active surface areas, which are attributed to the increase in mass transfers compared with a conventional nanograin electrode. The electrocatalytic activities for chlorine evolution were increased up to 20 % in the case of the nanorod electrode and 35% in the case of the nanosheet electrode compared with the nanograin electrode. The $RuO_2$ nanorod 80 nm in length and 20-30 nm in width and the $RuO_2$ nanosheet 40-60 nm in length and 40 nm in width are formed on the surface of Ti substrates. These results support that the templated $RuO_2$ nanorod and nanosheet electrodes are promising anode materials for chlorine evolution in future applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.200-207
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• 2011

Abstract: The effect of lead free glass frit compositions on the properties of thick film conductor and resistor pastes were investigated. Two types lead free frits, HBF-A(without $Bi_2O_3$) and HBF-B(with $Bi_2O_3$) were made from $SiO_2$, $B_2O_3$, $Al_2O_3$, CaO, MgO, $Na_2O$, $K_2O$, ZnO, MnO, $ZrO_2$, $Bi_2O_3$. And Ag based conductor pastes and $RuO_2$ based resistor paste were prepared by mixed with these frits and functional phase(Ag and $RuO_2$), and organic vehicle. The properties of thick film conductor and resistor sintered at $850^{\circ}C$ were studied after printing on $Al_2O_3$ substrate. The morphology of the sintered films surface were SEM and EDS were carried out to analysis the chemical composition on resistor surface and state of Ru atom in frit matrix.

• Transactions on Electrical and Electronic Materials
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• v.6 no.4
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• pp.177-185
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• 2005

Fatigue characteristics of lead zirconate titanate (PZT) films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) were investigated. The fatigue characteristics were investigated with respect to PZT film thickness, domain structure, fatigue pulse height, temperature, electrode materials and electrode configurations. The used top and bottom electrode materials were Pt and $RuO_2$. In the fatigue characteristics with fatigue pulse height and PZT film thickness, the fatigue rates are independent of the applied fatigue pulse height at the electric field regions to saturate the P-E hysteresis and polarization $(P^*,\;P^A)$ characteristics. The unipolar and bipolar fatigue characteristics of PZT capacitors with four different electrode configurations $(Pt//Pt,\;Pt//RuO_2,\;RuO_2//Pt,\;and\;RuO_2//RuO_2)$ were also investigated. The polarization-shifts during the unipolar fatigue and the temperature dependence of fatigue rate suggest that the migration of charged defects should not be expected in our CVD-PZT films. It seems that the polarization degradations are attributed to the formation of charged defects only at the Pt/PZT interface during the domain switching. The charged defects pin the domain wall at the vicinity of Pt/PZT interface. When the top and bottom electrode configurations are of asymmetric $(Pt//RuO_2,\;RuO_2//Pt)$, the internal fields can be generated by the difference of charged defect densities between top and bottom interfaces.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.8
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• pp.8-14
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• 1997

RuO$_{2}$ thin films are prepared by RF magnetron reactive sputtering and their characteristics of crystallization, microstructue, surface roughness and resistivity are studied with various O$_{2}$/(Ar+O$_{2}$) ratios and substrate temperatures. As O$_{2}$/(Ar+O$_{2}$) ratio decreas and substrate temperature increases, the preferred growing plane of RuO$_{2}$ thin films are changed from (110) to (101) plane. With increase of the O$_{2}$/(Ar+O$_{2}$) ratio from 20% to 50%, the surface roughness and the resistivity of RuO$_{2}$ thin films increase form 2.38nm to 7.81 nm, and from 103.6.mu..ohm.-cm to 227.mu..ohm.-cm, resepctively, but the deposition rate decreases from 47 nm/min to 17nm/min. On the other hand, as the substrate temperature increases form room temperature to 500.deg. C, resistivity decreases from 210.5.mu..ohm.-cm to 93.7.mu..ohm.-cm. RuO$_{2}$ thin film deposited at 300.deg. C shows a execellent surface roughness of 2.38nm. As the annealing temperature increases in the range between 400.deg. C and 650.deg. C, the resistivity decreases because of th improvement of crystallinity. We find that RuO$_{2}$ thin film deposited at 20% of O$_{2}$/(Ar+O$_{2}$) ratio and 300.deg. C of substrate temperature shows execellent combination of surface smoothness and low resistrivity so that it is well qualified for bottom electrodes for ferroelectric thin films.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.10a
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• pp.494-498
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• 2000

RuO$_2$ thin films are prepared by RF magnetron reactive sputtering and their characteristics of crystallization, microstructure, surface roughness and resistivity are studied with various $O_2$/ (Ar+O$_2$) ratios and substrate temperatures. As $O_2$/(Ar+O$_2$) ratio decreases and substrate temperature increases, the preferred growing plane of RuO$_2$ thin films are changed from (110) to (101) plane. With increase of the $O_2$/(Ar+O$_2$) ratio from 20% to 50%, the surface roughness and the resistivity of RuO$_2$ thin films increase from 2.38nm to 7.81 nm, and from 103.6 $\mu$$\Omega$-cm to 227 $\mu$$\Omega$-cm, respectively, but the deposition rate decreases from 47 nm/min to 17 nm/min. On the other hand, as the substrate temperature increases from room temperature to 500 $^{\circ}C$, resistivity decreases from 210.5 $\mu$$\Omega$-cm to 93.7 $\mu$$\Omega$-cm. RuO$_2$ thin film deposited at 300 $^{\circ}C$ shows a excellent surface roughness of 2.38 nm. As the annealing temperature increases in the range between 400 $^{\circ}C$ and 650 $^{\circ}C$, the resistivity decreases because of the improvement of crystallinity. We find that RuO$_2$ thin film deposited at 20% of $O_2$/(Ar+O$_2$) ratio and 300 t of substrate temperature shows excellent combination of surface smoothness and low resistivity so that it is well Qualified for bottom electrodes for ferroelectric thin films.

• Journal of Korean Society of Environmental Engineers
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• v.34 no.11
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• pp.715-719
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• 2012

We investigated the effects of electrochemical characteristics and generation of chlorine by the different amount of Ru coating which was prepared for $RuO_2$/Ti electrode coated with 1.5 mg, 2.5 mg, 5.5 mg, 8.5 mg Ru per unit area ($cm^2$). As a Result of the cycle voltammetry experiments, chlorine overvoltage of Ru-coated electrodes showed to be the nearly sustained value of approximately 1.15V (vs. Ag/AgCl). By contrary, According to the results of the AC impedance spectroscopy and potentiodynamic polarization tests, the amount of Ru per unit area ($cm^2$) included 2.5 mg, 3.5 mg as $RuO_2$/Ti offered the highest levels of durability which was electrode resistance and corrosion rate appeared to be $0.4582{\Omega}$, $0.5267{\Omega}$ and 0.082 mm/yr, 0.058 mm/yr, respectively. It was also observed that generation of chlorine coated with 3.5 mg per unit area ($cm^2$) was the highest value of 15.2 mg/L.

• Applied Chemistry for Engineering
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• v.31 no.2
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• pp.200-207
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• 2020

In this study, the effect of calcination temperature on the production of RuTi catalyst in NH₃-SCO (selective catalytic oxidation) was investigated. The RuTi catalyst was prepared using the wet impregnation method, and calcined at 400~600 ℃ for 4 h in air condition. The catalysts were named RuTi x00 where x00 means the calcination temperature. According to XRD (X-Ray diffraction), TEM (transmission electron microscope), H₂-TPR (H₂-temperature programmed reduction) analyses, RuTi x00 catalysts displayed that the dispersion of active metal decreased via increasing the calcination temperature. The catalysts with low dispersion showed a decrease in the surface adsorption oxygen species (O_β) and NH₃ adsorption amount via XPS, and NH₃-TPD analyses. Therefore, the RuTi 400 catalyst was well dispersed in the active metal on TiO₂ surface, and also, the NH₃ removal efficiency was excellent.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.11
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• pp.84-90
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• 1992

The dependence of electrical characteristics of RuO$_2$-based thick film resistors on the RuO$_2$ contents, glass composition variation and the firing temperatures was measured. The sheet resistance of resistors decreased as the contents of RuO$_2$ increased and at firing temperatures higher than C, the sheet resistance increased as the firing temperature increased. In case of using lead borosilicate glass-containing $Bi_{2}O_{3}$, the sheet resistance decreased as the contents of $Bi_{2}O_{3}$ increased. TCR changes from negative to positive values as RuO$_2$ contents increased and from positive to negative values as the firing temperature increased. TCR increased to positive values as $Bi_{2}O_{3}$ increased in the glass.