• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.30-39
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• 2000

The variation of electrical properties of (Ba, Sr)TiO$_3$[BST] thin films deposited of RuO$_2$electrode with (Ba+Sr)/Tr ration was investigated. BST thin films with various (Ba+Sr)/Tr ration were deposited on RuO$_2$/Si substrates using in-situ RF magnetron sputtering. It was found that the electrical properties of BST films depends on the composition in the film. The dielectric constant of the BST films is about 190 at the (Ba+Sr)/Tr ration of 1.0, 1,025 and does not change markedly. But , the dielectric constant degraded to 145 as the (Ba+Sr)/Tr ratio increase to 1.0. In particular, the leakage current mechanism of the films shows the strong dependence on the (Ba+Sr)/Tr ration in the films. At the ration (Ba+Sr)/Tr=1,025, the Al/BST/RuO$_2$ capacitor show the most asymmetric behavior in the leakage current density, vs, electric field plot. It is considered that the leakage current of the (Ba+Sr)/Tr=1,025 thin films is controlled by the battier-Iimited process, i,e, Schottky emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.480-483
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• 2001

Epitaxial rutile-$TiO_2$ and anatase-$TiO_2$ films were grown at $800^{\circ}C$ on $Al_2O_3$ (1102) and $LaAlO_3$ (001), respectively, using pulsed laser deposition. The formation of different phases on different substrates could be qualitatively explained by the atomic arrangements at the interfaces. We also successfully deposited epitaxial rutile-$TiO_2$ and anatase-$TiO_2$ films on conductive $RuO_2$ and $La_{0.5}Sr_{0.5}CoO_{3}$ electrodes, respectively. Using a Kelvin probe, we measured the photovoltaic properties of these multilayer structures. A rutile-$TiO_2$ film grown on $RuO_2$ showed a very broad peak in the visible light region. An epitaxial anatase-$TiO_2$ film grown on $La_{0.5}Sr_{0.5}CoO_{3}$ showed a strong peak with a threshold energy of 3.05 eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.480-483
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• 2001

Epitaxial rutile-TiO$_2$ and anatase-TiO$_2$ films were grown at 80$0^{\circ}C$ on $Al_2$O$_3$ (1102) and LaAlO$_3$ (001), respectively, using pulsed laser deposition. The formation of different phases on different substrates could be qualitatively explained by the atomic arrangements at the interfaces. We also successfully deposited epitaxial rutile-TiO$_2$ and anatase-TiO$_2$ films on conductive RuO$_2$ and La$_{0.5}$Sr$_{0.5}$CoO$_3$ electrodes, respectively Using a Kelvin probe, we measured the photovoltaic properties of these multilayer structures. A rutile-TiO$_2$ film grown on RuO$_2$ showed a very broad peak in the visible light region. An epitaxial anatase-TiO$_2$ film grown on La$_{0.5}$Sr$_{0.5}$CoO$_3$ showed a strong peak with a threshold energy of 3.05 eV 3.05 eV

• Journal of the Korean Magnetics Society
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• v.17 no.3
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• pp.124-127
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• 2007

Magnetic tunnel junctions (MTJs), which consisted of amorphous CoFeSiB layers, were investigated. The CoFeSiB layers were used to substitute for the traditionally used CoFe and/or NiFe layers with an emphasis given on understanding the effect of the amorphous free layer on the switching characteristics of the MTJs. CoFeSiB has a lower saturation magnetization ($M_s\;:\;560\;emu/cm^3$) and a higher anisotropy constant ($K_u\;:\;2800\;erg/cm^3$) than CoFe and NiFe, respectively. An exchange coupling energy ($J_{ex}$) of $-0.003\;erg/cm^2$ was observed by inserting a 1.0 nm Ru layer in between CoFeSiB layers. In the Si/$SiO_2$/Ta 45/Ru 9.5/IrMn 10/CoFe 7/$AlO_x$/CoFeSiB 7 or CoFeSiB (t)/Ru 1.0/CoFeSiB (7-t)/Ru 60 (in nm) MTJs structure, it was found that the size dependence of the switching field originated in the lower $J_{ex}$ using the experimental and simulation results. The CoFeSiB synthetic antiferromagnet structures were proved to be beneficial for the switching characteristics such as reducing the coercivity ($H_c$) and increasing the sensitivity in micrometer size, even in submicrometer sized elements.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.117-117
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• 2013

염료감응태양전지의 효율을 높이기 위해서, 광전극으로 쓰이는 다공성 $TiO_2$ 후막에 플라즈마원자증착기술(PEALD)과 원자증착기술(ALD)을 이용하여 알루미나($Al_2O_3$)막을 3차원적으로 균일하고 매우 얇게 형성하였다. 이를 통해서 태양빛에 의해 여기된 염료의 전자가 알루미나를 통과(tunneling)하여 $TiO_2$ 전도대로 도입되게 함과 동시에 $TiO_2$ 전도대로 도입된 전자들이 전해질과 염료로 재결합하는 현상을 방지하였다. 결국 이러한 작용에 의해서 염료감응태양전지의 개방전압을 높이는 효과를 관측하였다. 나아가 PEALD와 ALD 두가지 방식으로 형성된 $Al_2O_3$ 껍질층의 특성 차이를 비교 관찰하고 이에 따른 염료감응태양전지의 소자 특성에 미치는 영향을 고찰하였다.

• Journal of the Korean Magnetics Society
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• v.16 no.6
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• pp.276-278
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• 2006

The switching characteristics of magnetic tunnel junctions (MTJs) comprising amorphous ferromagnetic CoFeSiB free layer have been investigated. CoFeSiB was used for the free layer to enhance the switching characteristics. The typical junction structure was $Si/SiO_{2}/Ta$ 45/Ru 9.5/IrMn 10/CoFe $7/AlO_{x}/CoFeSiB\;(t)/Ru\;60\;(in\;nm)$. CoFeSiB has low saturation magnetization ($M_{s}$) of $560\;emu/cm^{3}$ and high anisotropy constant ($K_{u}$) of $2800\;erg/cm^{3}$. These properties caused low coercivity ($H_{c}$) and high sensitivity in MTJs, and it also confirmed in submicrometer-sized elements by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. By increasing CoFeSiB free layer thickness, the switching characteristics became worse due to increase of the demagnetization field.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.50-51
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• 2002

최근 실온에서 약 40％ 이상의 높은 자기저항(magnetoresistance, MR)을 나타내는 자기 터널 접합(magnetic tunnel junction, MTJ)이 보고되면서 비휘발성 자기메모리로의 응용을 눈앞에 두고 있다.[1]. 이에 본 실험에서는 Substrate / Ta (base electrode) / NiFe / PtMn (AF pinning layer) / CoFe (pinned) / Ru / CoFe (fixed) / Al-O/ CoFe (free) / NiFe (free) / Ta & Ru (Capping Layer)과 같은 MTJ 증착 구조를 사용하여, MTJ의 보다 향상된 특성을 확보하기 위한 노력으로서 Al-O 두께, 어닐링 조건(Field Intensity ＆ Sequence)변화 등을 시도하였다. (중략)

• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.233-240
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• 1997

The Ru-based thick film resistor(TFR) for sintering at 90$0^{\circ}C$ was synthesized to prepare the LCR net-work. These compositions of pyrochlore could be prepared by decreasing the amount of PbO and increasing alumina and silica contents of glass frit. In this study, the sheet resistances of the TFTs. which sint-ered at 90$0^{\circ}C$ after printing on alumina substrate, the sheet resistances of the TFRs on inductor and capa-citor substrate and the interphase between TFR and substrate were observed. And the changes of the sheet resistance were obtained with the contents of RuO2. In case of the TFR sintered at 90$0^{\circ}C$, the sheet resis-tances on alumina substrates were in the range of 103~106$\Omega$/$\square$, but the sheet resistances of TFR on in-ductor and capacitor substrate were not obtained.

• Journal of the Korean Ceramic Society
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• v.35 no.10
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• pp.1061-1069
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• 1998

The thermal instability of Al2TiO5 Ceramics was contrlled by solid solution with MgO SiO2 and ZrO2 through electrofusion in an arc furnace. The thermal expansion properties of Al2TiO5 composites show the hysteresis due to the strong anisotropy of The crystal axes of these material. These phenomena are ex-plained by the opening and closing of microcracks. The difference in microcracking temperatures e.g 587.6(ATG2), 405.9(ATG3) and 519.7$^{\circ}C$(ATG4) is caused by the difference in grain size and stabilizer type. The thermal shock behaviour under cyclic conditions between 750-1400-75$0^{\circ}C$ show no change in mi-crostructure and phase assemblage for all three stabilized specimens. After the thermal loading test at 110$0^{\circ}C$ for 100hrs. ATG1 and ATG2 materials decomposes completely to its components corundum and ru-tile in both cases. However with approximatelly 20% retention of the Al2TiO5 Thus in order to prevent decomposition of the stabilized material in the critical temperature range 800-130$0^{\circ}C$ it must be traversed within a short period of time.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1343-1346
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• 2008

$KSrPO_4$ and $Sr_3(Al_2O_5)Cl_2$ phosphors doped with $Eu^{2+}$ emit a blue and orange-yellow luminescence under ultraviolet (UV) excitation at ~ 400 nm, respectivel, which can be used for making white light emitting diodes.