• 한국전기전자재료학회논문지
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• 제32권3호
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• pp.207-212
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• 2019

A flat-type piezoelectric ceramic ultrasonic transmitter was successfully fabricated for application in acoustic devices with cone-free diaphragms. The transmitter, possessing a center frequency of 40.6 kHz, exhibited a higher displacement characteristic for a multilayer type compared with a single layer type. Surface roughness treatment of an Al elastic diaphragm influenced a slight increase (1.1 dB) in the sound pressure level (SPL) at $10V_{rms}$ due to the enlarged surface area. The fabricated multilayer piezoelectric ceramic ultrasonic transmitter showed increasing SPL with increasing input voltage, with a maximum SPL of approximately 123.6 dB at $10V_{rms}$. This implies a doubly increased SPL density of $3.6dB/mm^3$, superior to that of a commercial open-type transmitter with a cone.

• 한국광학회지
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• 제18권6호
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• pp.452-460
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• 2007

ZERODUR와 용융 석영으로 저산란 반사경을 제작하고 산란 특성을 연구하였다. Bowl feed 법을 이용하여 초연마면인 표면거칠기 0.326 ${\AA}$인 용융 석영 기판과 표면거칠기 0.292 ${\AA}$의 ZERODUR 기판을 얻었다. 이온빔 스퍼터링 방법으로 초연마된 기판 위에 $SiO_2$와 $Ta_2O_5$를 교번으로 22층을 증착하여 다층박막 고반사 거울을 얻었다. 용융 석영 반사경과 ZERODUR 반사경의 산란이 각각 4.6 ppm과 30.9 ppm으로 측정되었으며, 이로부터 산란이 매우 작은 경우 기판의 표면거칠기가 산란을 결정하는 주요 파라미터가 아니라는 것을 알았다. 나아가 반사경의 표면거칠기를 AFM으로 측정한 결과. ZERODUR 반사경이 용융 석영 반사경 보다 박막의 표면거칠기가 2.3배 더 높게 측정 되었다. 이 결과는 기판-박막 경계면에서 박막 형성 초기에 기판의 화학조성 또는 결정방향과 증착물질의 상호관계로 인하여 박막 형성 초기에 표면거칠기가 급격히 나빠져서 발생하는 것으로 유추되었다. SEO 300A으로 접촉각 측정을 하여 Giriflaco-Good-Fowkees-Young 방법으로 표면에너지를 계산하였다. 표면거칠기 0.46 ${\AA}$을 갖는 용융 석영 기판이 표면거칠기 0.31 ${\AA}$을 갖는 ZERODUR 기판보다 접촉각이 더 작고 표면에너지는 크게 나타났다. 이러한 차이가 기판 종류에 따라 박막형성 초기에 표면거칠기를 다르게 하는 한 요인으로 판단되며, 기판의 표면에너지가 높을수록 미려한 박막표면을 얻는 것으로 확인되었다. ZERODUR의 표면에너지 차이를 설명하기 위해 XPS 분석으로 용융 석영은 Si, O로 구성되었고 ZERODUR는 Si, O, Al, Na 그리고 F로 구성되었다는 것을 알 수 있었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제11권3호
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• pp.146-152
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• 2011

Thermal stability of $Ge_2Sb_2Te_5$ (GST) and $SiO_2$ doped GST (SGST) films for phase change random access memory applications was investigated by observing the change of surface roughness, layer density and composition of both films after isothermal annealing. After both GST and SGST films were annealed at $325^{\circ}C$ for 20 min, root mean square (RMS) surface roughness of GST was increased from 1.9 to 35.9 nm but that of SGST was almost unchanged. Layer density of GST also steeply decreased from 72.48 to 68.98 $g/cm^2$ and composition was largely varied from Ge : Sb : Te = 22.3 : 22.1 : 55.6 to 24.2 : 22.7 : 53.1, while those of SGST were almost unchanged. It was confirmed that the addition of a small amount of $SiO_2$ into GST film restricted the deterioration of physical and chemical properties of GST film, resulting in the better thermal stability after isothermal annealing.

• 한국결정성장학회지
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• 제21권6호
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• pp.230-234
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• 2011

$CF_4$ Ar 및 $SF_6$/Ar 유도결합 플라즈마을 이용하여 ZnO 박막의 고이온밀도 플라즈마 식각을 수행하였다. $10CF_4$/5Ar, $10SF_6$/5Ar 유도결합 플라즈마에서 최고 ~1950 ${\AA}$/min과 ~1400 ${\AA}$/min의 식각 속도를 확보하였다. 대부분의 조건 하에서 식각된 ZnO 표면은 식각 전보다 더 낮은 표면조도 값들을 나타내었다. $10CF_4$/5Ar 유도결합 플라즈마에서 Ni mask는 ZnO에 대해 최고 11의 높은 식각 선택도를 나타낸 반면에 Al은 이보다 낮은 1.6~4.7 범위의 식각선택도를 나타내었다.

• 한국세라믹학회지
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• 제48권4호
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• pp.312-315
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• 2011

The effect of slurry composition and wafer flatness on a material removal rate (MRR) and resulting surface roughness which are evaluation parameters to determine the CMP characteristics of the on-axis 6H-SiC substrate were systematically investigated. 2-inch SiC wafers were fabricated from the ingot grown by a conventional physical vapor transport (PVT) method were used for this study. The SiC substrate after the CMP process using slurry added oxidizers into slurry consisted of KOH-based colloidal silica and nano-size diamond particle exhibited the significant MRR value and a fine surface without any surface damages. SiC wafers with high bow value after the CMP process exhibited large variation in surface roughness value compared to wafer with low bow value. The CMPprocessed SiC wafer having a low bow value of 1im was observed to result in the Root-mean-square height (RMS) value of 2.747 A and the mean height (Ra) value of 2.147 A.

• 한국진공학회지
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• 제21권3호
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• pp.158-163
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• 2012

본 연구에서는 폴리머 애자의 자가세정 코팅을 위한 소재로써 $TiO_2$ 박막을 실리콘과 유리, 폴리머애자 기판위에 증착하였다. $TiO_2$ 박막은 $TiO_2$ 세라믹 타겟이 부착된 RF 마그네트론 스퍼터링 장치를 이용하여 증착하였다. $TiO_2$ 박막은 스퍼터링의 다양한 공정조건 중 RF 파워의 크기에 따라 100 nm의 두께로 증착하였다. RF 파워에 따라 증착되어진 $TiO_2$ 박막의 접촉각, 표면거칠기등 표면 특성을 확인하였으며, UV-visible등 광학적 특성을 고찰하여, 구조적 특성과의 관계를 고찰하였다.

• Design & Manufacturing
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• 제1권1호
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• pp.7-11
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• 2007

The fabrication of precision optical components by deterministic CNC grinding is an area of great current interest. Replacement of the traditional, craftsman driven, optical fabrication process is essential to reduce costs and increase process flexibility and reliability. Moreover, CNC grinding is well suited to the fabrication of complex shapes such as aspheres, making it possible to design optical systems with fewer components and reduced weight. Current technology is capable of producing surfaces with less than 2 microns peak to valley error, 50 nm rms surface roughness, and less than 1 micron subsurface damage. Bound abrasive tools, in which the abrasive particles are fixed in a second (matrix) material, play an important part in achieving this performance. In this paper, the factors affecting the ultra-fine surface roughness and profile accuracy of machined surfaces of aspheric parts has been analyzed experimentally and theoretically and on ultra-precision aspheric grinding system and precise adjusting mechanism have been designed and manufactured. In the paper we report the results of experiments and modeling performed to examine the effects of machinability, occurring during grinding of optical surfaces, on the tool surface profile. Profiles of machined surface were measured by using SEM. In order to optimize grinding conditions of aspheric lens processing, we performed experiments by design of experiments.

• 한국전자파학회논문지
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• 제17권12호
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• pp.1172-1180
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• 2006

본 논문은 풀이 없는 지표면에서의 후방 산란 계수(backscattering coefficients)를 측정하고, 이 측정 결과를 이용하여 여러 표면 산란 모델들과 inversion 알고리즘의 성능을 비교, 분석하였다. 우선, R-밴드 주파수($1.7{\sim}2.0GHz$)에서 완전 편파 scatterometer를 이용하여 풀 층이 없는 지표면에 대해서 편파별로 후방 산란 계수를 측정하고, 동시에 수분 함유량과 표면 거칠기를 측정하였다. 그런 다음 측정된 지표면 변수들을 표면 산란 모델들에 입력하여 후방 산란 계수를 계산하고, 이 계산 결과를 측정 결과와 비교 분석하였다. 또한, inversion 알고리즘들을 적용하여 측정된 편파별 후방 산란 계수로부터 수분 함유량을 추출하고, 이 추출된 수분 함유량이 현장에서 측정한 수분 함유량과 잘 맞는지 여부를 확인하였다. 표면 산란 모델들 중에서 정확도가 높은 모델들을 제시하였으며, inversion 모델들의 계산 결과도 나타내었다.

• 한국표면공학회지
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• 제38권5호
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• pp.188-192
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• 2005

Indium zinc oxide (IZO) thin films were deposited on glass substrate by dc magnetron sputtering. The effects of oxygen flow rate and deposition temperature on electrical and optical properties of the films were investigated. With addition of small amount of oxygen gas, the characteristic properties of amorphous IZO films were improved and the specific resistivity was about $4.8{\times}10^{-4}\Omega{\cdot}cm$. Change of structural properties according to the deposition temperature was observed with XRD, SEM, and AFM. Films deposited above $300^{\circ}C$ were found to be polycrystalline. Surface roughness of the films was increased due to the formation of grains on the surface. Electrical conductivity became deteriorated for polycrystalline IZO films. Consequently, high quality IZO films could be prepared by do sputtering with $O_{2}/Ar{\simeq}0.03$ and deposition temperature in range of $150\~200^{\circ}C$; a specific resistivity of $3.4{\times}10^{-4}{\Omega}{\cdot}cm$, an optical transmission over $90\%$ at wavelength of 550 nm, and a rms value of surface roughness about $3{\AA}$.

• 한국재료학회지
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• 제23권12호
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• pp.732-736
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• 2013

AlN epilayers were grown on a c-plane sapphire substrate using hydride vapor phase epitaxy (HVPE). A series of AlN epilayers were grown at $1120^{\circ}C$ with V/III ratios 1.5, 2.5 and 3.5, and the influence of V/III ratio on their properties was investigated. As the V/III ratio was increased, the surface roughness (RMS roughness), Raman shift of $E_2$ high peaks and full-width at half-maximum (FWHM) of symmetrical (002) & asymmetrical (102) of the AlN epilayers increased. However, the intensities of the Raman $E_2$ high peaks were reduced. This indicates that the crystal quality of the grown AlN epilayers was degraded by activation of the parasitic reaction as the V/III ratio was increased. Smooth surface, stress free and high crystal quality AlN epilayers were obtained at the V/III ratio of 1.5. The crystal quality of AlNepilayers is worsened by the promotion of three-dimensional (3D) growth mode when the flow of $NH_3$ is high.