• Title/Summary/Keyword: Rf magnetron sputter method

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FCCL 제작 시 Cu Sputter 조건에 따른 Through Hole 특성 연구

  • Kim, Sang-Ho;Yun, Yeo-Wan
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2008.11a
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    • pp.15-16
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    • 2008
  • In case manufacturing COF, through hole should be made to be used for a pathway connecting the conductive layers of its both faces. In case Cu-plating inside of through hole with electroless plating way, contact between Cu and PI film gets bad to be fell apart from PI by the impact of applying to the electric devices. Therefore, after sputtering is applying on inner through hole, then a method to perform electroplating process. In this study, after changing sputtering condition to manufacture FCCL, we looked the changeability of the upper PI and inner hole Cu layers. Making use of RF Magnetron sputtering equipment, we coated Cu thin film and Cu-plated on it through electroplating. After cold-mounting the completed FCCL, we examined hole section through an optical microscope. From the result of test, with parameters deposition pressure and deposition time, both the thickness of the hole plated layer and PI plated upper layer increased at regular rate, increasing the thickness of Cu sputter layer. However, from the result of test in increasing RF-power, we could know the increment rate of hole plated layer is considerably greater than that of PI plated upper layer. Therefore, we finally acquired good result; if you want only to increase the plated layer of inner hole, it's much better to increase RF-power.

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A study of CrC Sputtering as an Alternative Method for Cr Electroplating (전해 크롬도금 대체용으로서의 CrC 스퍼터링에 관한 연구)

  • Im, Jong-Min;Choe, Gyun-Seok;Lee, Jong-Mu
    • Korean Journal of Materials Research
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    • v.12 no.1
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    • pp.82-88
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    • 2002
  • Chromium carbide films were deposited on high speed steels using a Cr_3C_2$ target by magnetron sputtering. Effects of the deposition parameters (power, Ar pressure and substrate temperature) on deposition rates and surface roughnesses of the films were investigated. The morphologies of those films were characterized by scanning electron microscopy and atomic force microscopy. The grain size of the samples deposited using dc-power is larger than that using equivalent rf-power. The hardness of the sample increases with increasing rf-power, whereas the elastic modulus nearly does not change with rf-power. The optimum sputter deposition conditions for chromium carbide on high speed steels in the corrosion resistance aspect were found to be the rf-power with small roughness.

ZnO Nanowire를 이용한 2D 배열 구조 제작

  • Im, Yeong-Taek;No, Im-Jun;Sin, Baek-Gyun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.603-603
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    • 2013
  • 3D 배열구조의 Vertical nanowire Integrated Nanogenerator (VING)은 낮은 출력, 유연 기판 상에 부적합, 나노선의 부서지기 쉬움, 장기 안정성, 균일한 나노선의 성장을 필요로 하는 문제점을 가지고 있다. 본 연구에서는 이러한 VING방식의 단점을 보완하여 2D 배열 구조의 Lateral nanowire Integrated Nanogenerator (LING)로 고출력 전압, 유연기판의 상에 적합 등을 개선하는 방향으로 연구를 하였다. 본 연구의 실험 방법으로는 RF magnetron sputter를 이용하여 AZO Seedlayer를 제작하였으며 제작된 AZO Seedlayer를 photolithography 공정으로 제작하였다. 패터닝된 샘플을 Hydro thermal synthesis method로 성장시켰다. 구조적 분석으로는 XRD, FE-SEM 등을 이용하여 측정하였다.

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Ferroelectrical Properties of SBT Capacitors with various Annealing Atmosphere (다양한 열처리 분위기에 따른 SBT 커패시터의 강유전체 특성)

  • Cho, Choon-Nam;Oh, Young-Choul;Kim, Jin-Sa;Choi, Woon-Shik;Kim, Chung-Hyeok;Park, Young-Pil;Hong, Jin-Woong;Lee, Joon-Ung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05d
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    • pp.72-76
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    • 2003
  • The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The structural and electrical properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealed atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grains largely grew in oxygen annealing atmosphere. The maximum remanent polarization and the coercive electric field in oxygen annealing atmosphere are $12.40[{\mu}C/cm^2]$ and 30[kV/cm] respectively. The fatigue characteristics of SBT capacitors did not change up to $10^{10}$ switching cycles.

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Electrical Properties of SBT Capacitors with various Annealing Atmosphere (다양한 열처리 분위기에 따른 SBT 커패시터의 전기적 특성)

  • 조춘남;김진사;신철기;최운식;김충혁;홍진웅;이준웅
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.3
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    • pp.207-213
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    • 2003
  • The Sr$\_$0.7/Bi$\_$2.6/Ta$_2$O$\_$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF magnetron sputtering method. The structural and electrical properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealed atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grain largely grew in oxygen annealing atmosphere. The maximum remnant polarization and the coercive electric field in oxygen annealing atmosphere are 12.40[${\mu}$C/cm$^2$] and 30[kV/cm] respectively. The dielectric constant and leakage current density of capacitors annealed oxygen atmosphere are 340 and 2.13${\times}$10$\^$-9/ [A/cm$^2$] respectively. The fatigue characteristics of SBT capacitors did not change up to 10$\^$10/ switching cycles.

Changes in Interface Properties of TCO/a-Si:H Layer by Zn Buffer Layer in Silicon Heterojunction Solar Cells (실리콘 이종접합 태양전지의 Zn 확산방지층에 의한 TCO/a-Si:H 층간의 계면특성 변화)

  • Tark, Sung-Ju;Son, Chang-Sik;Kim, Dong-Hwan
    • Korean Journal of Materials Research
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    • v.21 no.6
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    • pp.341-346
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    • 2011
  • In this study, we inserted a Zn buffer layer into a AZO/p-type a-si:H layer interface in order to lower the contact resistance of the interface. For the Zn layer, the deposition was conducted at 5 nm, 7 nm and 10 nm using the rf-magnetron sputtering method. The results were compared to that of the AZO film to discuss the possibility of the Zn layer being used as a transparent conductive oxide thin film for application in the silicon heterojunction solar cell. We used the rf-magnetron sputtering method to fabricate Al 2 wt.% of Al-doped ZnO (AZO) film as a transparent conductive oxide (TCO). We analyzed the electro-optical properties of the ZnO as well as the interface properties of the AZO/p-type a-Si:H layer. After inserting a buffer layer into the AZO/p-type a-Si:H layers to enhance the interface properties, we measured the contact resistance of the layers using a CTLM (circular transmission line model) pattern, the depth profile of the layers using AES (auger electron spectroscopy), and the changes in the properties of the AZO thin film through heat treatment. We investigated the effects of the interface properties of the AZO/p-type a-Si:H layer on the characteristics of silicon heterojunction solar cells and the way to improve the interface properties. When depositing AZO thin film on a-Si layer, oxygen atoms are diffused from the AZO thin film towards the a-Si layer. Thus, the characteristics of the solar cells deteriorate due to the created oxide film. While a diffusion of Zn occurs toward the a-Si in the case of AZO used as TCO, the diffusion of In occurs toward a-Si in the case of ITO used as TCO.

SAW Filter Made of ZnO/Nanocrystalline Diamond Thin Films (ZnO/나노결정다이아몬드 적층 박막 SAW 필터)

  • Jung, Doo-Young;Kang, Chan-Hyoung
    • Journal of the Korean institute of surface engineering
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    • v.42 no.5
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    • pp.216-219
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    • 2009
  • A surface acoustic wave (SAW) filter structure was fabricated employing $4{\mu}m$ thick nanocrystalline diamond (NCD) and $2.2{\mu}m$ thick ZnO films on Si wafer. The NCD film was deposited in an $Ar/CH_4$ gas mixture by microwave plasma chemical vapor deposition method. The ZnO film was formed over the NCD film in an RF magnetron sputter using ZnO target and $Ar/O_2$ gas. On the top of the two layers, copper film was deposited by the RF sputter and inter digital transducer (IDT) electrode pattern (line/space : $1.5/1.5{\mu}m$) was defined by the photolithography including a lift-off etching process. The fabricated SAW filter exhibited the center frequency of 1.66 GHz and the phase velocity of 9,960 m/s, which demonstrated that a giga Hertz SAW filter can be realized by utilizing the nanocrystalline diamond thin film.

A Study on the Sputtering-resistant Properties of MgO Thin-film in the AC Plasma Display Panel (PDP) (AC Plasma Display Panel (PDP)에서 MgO 박막의 내스퍼터성에 관한 연구)

  • Ji, Seong-Won;Yeo, Jae-Yeong;Lee, U-Geun;Jo, Jeong-Su;Park, Jeong-Hu
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.5
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    • pp.361-366
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    • 1999
  • The life of AC PDP depends largely on the sputtering-resistant property of the protecting layer such as MgO thin-film. However, it is very difficult to measure the sputtering-resistant property in the stable driving conditions of AC PDP. In this paper we have suggested a high speed measurement technique of the sputtering-resistant property of MgO thin-film by applying the MgO thin-film as the target of RF magnetron sputtering system. We have also applied this method to the e-beam MgO and sputter-MgO and e-beam MgO superior to sputter-MgO 3 times over. Also, the relation of Xe gas partial pressure(X) and sputtered thickness(Y) was Y=3.4X+13.5.

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A surface resistance effect on the fabrication of Dye-sensitized Solar Cell with various widths (셀 폭에 따른 염료 감응형 태양전지의 표면저항 효과)

  • Choi, Jin-Young;Kim, Yong-Cheol;Park, Sung-Jun;Sung, Youl-Moon;Kim, Whi-Young;Kim, Hee-Je
    • 한국신재생에너지학회:학술대회논문집
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    • 2006.06a
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    • pp.187-191
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    • 2006
  • Sputter deposition followed by surface treatment was studied using reactive RF plasma as a method for preparing titanium oxide $(TiO_2)$ films on the FTO $(SnO_2: F)$ substrate for dye-sensitized solar cells (DSCs). Anatase structure $TiO_2$ films deposited by reactive RF magnetron sputtering under the conditions of $Ar/O_2(5%)$ mixtures, RF power of 600W and substrate temperature of $400^{\circ}C$ were surface-treated by inductive coupled plasma (ICP) with $Ar/O_2$ mixtures at substrate temperature of $400^{\circ}C$, and thus the films were applied to the DSCs. We have chosen a solar cell width as a variable of a large-scaled DSCs and confirmed electric characteristics of an individual cell. As a result, the higher the internal resistance of DSC becomes, the wider the width gets. Internal resistance makes it difficult to collect photoelectron generated from dye. Ultimately up sizing DSC causes the increase of internal resistance and then has a bad effect on the cell characteristics.

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Reliability Measurements and Thermal Stabilities of W-C-N Thin Films Using Nanoindenter (Nanoindenter를 이용한 W-C-N 박막의 신뢰도 측정과 열적 안정성 연구)

  • Kim, Joo-Young;Oh, Hwan-Won;Kim, Soo-In;Choi, Sung-Ho;Lee, Chang-Woo
    • Journal of the Korean Vacuum Society
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    • v.20 no.3
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    • pp.200-204
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    • 2011
  • In this paper, we deposited the tungsten carbon nitride (W-C-N; nitrogen gas flow of 2 sccm) and tungsten carbon (W-C) thin film on silicon substrate using rf magnetron sputter. Then the thin films annealed at $800^{\circ}C$ during 30 minute ($N_2$ gas ambient) for thermal damage. Nano-indenter was executed 16 points on thin film surface to measure the thermal stability, and we also propose the elastic modulus and the Weibull distribution, respectively. This nanotribology method provides statistically reliable information. From these results, the W-C-N thin film included nitrogen gas flow is more stable for film uniformities, physical properties and crystallinities than that of not included nitrogen gas flow.