• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.60-60
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• 1997

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.174-175
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• 2005

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1993.05a
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• pp.55-55
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• 1993

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1994.05a
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• pp.112-112
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• 1994

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1994.05a
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• pp.113-113
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• 1994

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1997.05a
• /
• pp.97-97
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• 1997

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1998.05a
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• pp.158-159
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• 1998

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.80-80
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• 2000

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.242-244
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• 2015

ZnO:Ga thin films were deposited by RF magnetron sputtering technique from ZnO (3 wt.% $Ga_2O_3$) target onto glass substrates under various RF power. The influence of RF power on the structural, electrical, and optical properties of ZnO:Ga thin films was investigated by X-ray diffraction, atomic force microscopy, Hall method and optical transmission spectroscopy. As the RF power increases from 50 to 110W, the crystallinity is deteriorated, the root main square surface roughness is decreased and the sheet resistance is increased. The increase of sheet resistance is caused by decreasing carrier concentration due to interstitial Ga ion. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is a red-shift with increasing RF power.

• Journal of the Korean Ceramic Society
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• v.44 no.10
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• pp.585-588
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• 2007

Silicon nitride films for an anti-reflection coating were deposited on silicon via RF magnetron sputtering using a $Si_3N4$ target. The best result was obtained at the sputtering condition of 340 W RF power, 5 mtorr Ar atmosphere, $100^{\circ}C$ substrate temperature. The films showed 7.9% reflectance minimum with 2.35 refractive index. 0.21 absorption coefficient at 66.6 nm thickness. The surface morphology showed a smooth and dense film with good adhesion to silicon surface.