• Title/Summary/Keyword: Return loss (S11)

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Design and Fabrication of Active Type Patch Antenna for S-DMB (위성 DMB용 능동형 패치 안테나의 설계 및 제작)

  • Yun, Li-Ho;Kim, Byung-Mun
    • 전자공학회논문지 IE
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    • v.45 no.4
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    • pp.54-59
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    • 2008
  • In this paper, circularly polarized patch antenna with 2-stage LNA for the reception of S-DMB is presented. It used teflon didelectric substrate of ${\in}_r$=2.2 and the size is $40{\times}40{\times}15\;[mm]$. Experimental results of fabricated antenna show that bandwidths of input return loss and axial ratio are about 22 [MHz] and 25 [MHz]. Input return loss, output return loss, gain, and noise figure of the fabricated 2-stage LNA are $S_{11}$=-14 [dB], $S_{22}$=-18 [dB], $S_{21}$=26.8 [dB], and NF=1.14 [dB] respectively. The fabricated active type antenna has total gain of 30.4 [dB] at 2.642 [GHz].

A Study on The Inset Fed Rectangular Microstrip Patch Antenna for S-band Applications (S-대역용 인셋 급전 구형 마이크로스트립 패치 안테나 연구)

  • Hong, Jae-Pyo;Kim, Byung-Mun;Son, Hyeok-Woo;Cho, Young-Ki
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.10
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    • pp.2359-2366
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    • 2014
  • In this paper, the characteristics of a inset fed rectangular microstrip patch antenna for S-band applications is studied. The variations of return loss along inset length and inset width are investigated on the inset fed rectangular microstrip patch antenna. From the investigated results, the optimized inset fed antenna is designed. At the resonant frequency 2.3 GHz, the optimized dimension of the patch is $45.0mm{\times}40.9mm$. The inset length and width are 14 mm and 1 mm, respectively. The designed antenna is fabricated on the substrate which has a dielectric constant and thickness with 2.5 and 0.787 mm. Simulation results are obtained by a 3D EM(Electromagnetic) solver. The resonant frequency and return loss are measured 2.3025 GHz and -21.11 dB, respectively. The measured and simulated results of the fabricated antenna are in good agreement.

Analysis of Frequency Response Depending on Wire-bonding Length Variation (Wire-bonding의 길이 변화에 따른 주파수별 특성 분석)

  • Gwon, Eun-Jin;Mun, Jong-Won;Ryu, Jong-In;Park, Se-Hoon;Kim, Jun-Chul
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.551-552
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    • 2008
  • This paper presets a results of frequency response in variation of wire bonding length. A gold ball bonding is used as a wire bonding process, and a DPDT(double pole double thru) switch is adapted as a device for test. Wire length is ranged from 442um to 833um and a measured frequency range is from 1 GHz to 6 GHz. Little difference are measured in insertion loss and return loss depending on wire length. Measured S21 and S11 are -0.58 dB and -17.7 dB, respectively. S21 insertion loss is rising up and S11 insertion loss is falling down as the frequency is increased.

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Studies of MIMIC Power amplifier for millimeter-waves

  • Rhee, Eung-Ho;Yoon, Jin-seub;Cho, Seung-ki;Yoon, Jin-seub
    • Proceedings of the IEEK Conference
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    • 2000.07b
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    • pp.1009-1012
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    • 2000
  • In this paper, we have designed and fabricated power PHEMT’s with an unit gate width of 80$\mu\textrm{m}$ and 4 fingers, and MIMIC power amplifiers using the PHEMT’s as well. The PHEMT’s have a 0.2$\mu\textrm{m}$ gate length and source to drain spacing of 3$\mu\textrm{m}$. The characteristics of the fabricated PHEMT’s are 4.08dB of S$\sub$21/ gain at the 35GHz and 317mS/mm of gm, and 62GHz of f$\sub$T/ and 120GHz of f$\sub$max/. The designed and fabricated MIMIC’s power amplifiers with 6 PHEMT’s and MIN capacitors were fully passivated by 1000 Α of Si$_3$N$_4$ film for higher performance and surface protects. The chips were processed using the MINT processes, and size was 3.25 ${\times}$ 1.8$\textrm{mm}^2$. The fabricated MIMIC power amplifiers have RF characteristics such as 11.25dB of S$\sub$21/ gain, 11.37dB of input return-loss and 12.69dB of output return-loss at the 34.55GHz.

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Modeling of FBAR Devices with Bragg Reflectors

  • Lee, Jae-Young;Yoon, Gi-Wan;Linh, Mai
    • Journal of information and communication convergence engineering
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    • v.4 no.3
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    • pp.108-110
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    • 2006
  • Film bulk acoustic resonators for radio frequency wireless applications are presented. Various simulations and modeling were carried out. The impedance of a five-layered FBAR showed almost the same trend of the wideband characteristics as that of an ideal FBAR, but the characteristics of the higher modes appear to be much more suppressed. In addition, the wideband impedance decreased with increasing device size. The resonance characteristics depend strongly on the physical dimensions.

Effects of Thermal Treatment on the Characteristics of Spiral Inductors on Bragg Reflectors

  • Mai, Linh;Lee, Jae-Young;Le, Minh-Tuan;Pham, Van-Su;Yoon, Gi-Wan
    • Journal of information and communication convergence engineering
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    • v.4 no.4
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    • pp.155-157
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    • 2006
  • This paper presents the thermal technique to improve characteristic of planar spiral inductors. The spiral inductors were fabricated on silicon dioxide/silicon (SiO2/Si) wafer. The thermal treatment was done by annealing processes. The measure results showed a considerable improvement of return loss (Sl1). This thermal treatment seems very promising for enhancing spiral inductors based RF IC's.

Design of a Circularly Polarized Antenna for UHF Band RFID Reader (UHF RFID 리더기용 원형편파 안테나 설계)

  • Chun, Jong-Hun;Han, Seung-Jo;Pyun, Jae-Young;Lim, Gyeong;Park, Jong-An
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.6 no.3
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    • pp.101-110
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    • 2007
  • This study has designed a circular polarization antenna for UHF bandwidth RFID reader. As a result of performance test of the antenna designed it is found that return loss (S11) is about -45.529dB at 914MHz, which is relatively small, and antenna gain is about 6.09dBi. It has also been confirmed that $50{\Omega}$ impedance matching is about $50.48{$\Omega}$ and it can be applied to every RFID reader. Therefore, the antenna is designed to have higher gain of circular polarization by improving reception, which is one of the most important parameters of RFID reader and is expected to be extensively used to recognize multi-tag in the distance.

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Design and Characterization of HTS antenna array with sequential rotation array (순차적 순환배열을 이용한 고온초전도 배열 안테나 설계 및 특성해석)

  • Chung, D.C.;Hwang, J.S.;Kim, Y.M.;Choi, H.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.05a
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    • pp.77-81
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    • 2006
  • We report the performance of a four-element, 11.67 GHz, high-Tc superconducting (HTS) microstrip antenna array with corporate feed network and circular polarization for direct broadcasting satellite (DBS) system. Our array antennas were designed and built on a 0.5 mm thick MgO substrate. To compare the superconducting antennas with normal conducting counterpart, One antenna pattern was fabricated from gold thin film, and a second pattern was fabricated from $YBa_2Cu_3O_{7-x}$ (YBCO) superconducting thin film. To improve the axial ratio of circularly polarized arrays, sequential rotation technique were used. Efficiency, radiation pattern, return loss and bandwidth were measured for both antennas at room temperature and at cryogenic temperature. The array produced good circular polarization, and the gain of the array at 77 K, relative to a copper array at room temperature was approximately 1.54 dB. The measured return loss of our HTS antenna array was 35.79 dB at the resonant frequency of 11.67 GHz and The total effective bandwidth was about 3.4 %. The results showed that high-temperature superconductors, when used in microstrip arrays, improved the efficiency of the HTS antenna array for circularly polarization.

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Improvement of Resonance Characteristics by Post-Annealing in FBAR Devices

  • Lee, Jae-Young;Mai, Linh;Yoon, Gi-Wan
    • Journal of information and communication convergence engineering
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    • v.5 no.4
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    • pp.320-323
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    • 2007
  • This paper presents the resonance characteristics of the ZnO-based FBAR devices with multilayered Bragg reflectors with Cr adhesion layer inserted between $SiO_2$ and W layers. Due to the post- annealing, the return loss ($S_{11}$) and series/parallel quality factor are significantly improved when compared with the non-post annealing. This post-annealing method seems to be a very efficient way to improve the resonance characteristics of FBAR devices.

A Study on Frequency Properties of Bulk Acoustic Wave Resonators using PVDF (고분자 압전필름을 이용한 BAW 공진기의 주팍수 특성에 관한 연구)

  • 정영학;김응권;윤창진;송준태
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.12
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    • pp.1077-1079
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    • 2003
  • This paper describes the development of bulk acoustic wave (BAW) resonators using a PolyVinyliDene Fluoride (PVDF). The resonators have an air gap between a substrate for acoustic isolation without surface micromachining. We measured the resonance frequency and the input reflection coefficient (S$\sub$11/) of resonators using vector network analyzer. The fundamental resonance in this experimental result was measured at 1.4 ㎓ with a return loss of -23.2 ㏈. We can confirm a possibility of resonator application as using a PVDF because it can fabricate the resonator without etching process.