• Korean Journal of Optics and Photonics
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• v.18 no.3
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• pp.216-220
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• 2007

A widely tunable add/drop filter composed of double ring resonators is implemented with high-index-contrast polymer waveguide. To enhance the productivity, directional couplers are designed to have good fabrication tolerance. The refractive indices of the core and cladding in the 1550 nm wavelength are 1.51 and 1.378, respectively. Drop response in comparison with neighborhood peak gets enhanced by more than 2.9 dB at the wavelength where both rings resonate. This filter can be used to build widely tunable laser diode through hybrid-integration with reflective SOA.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.3A
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• pp.171-178
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• 2003

In this paper, We has proposed two DGS(Defected Ground Structure) resonators and designed the low-pass filter using the proposed DGS types. This structure consists of two rectangular slots, a ‘II type’ slot on the ground plane, and the stub at the transmission line. It has strong advantages that can vary the return loss at the passband freely and also can easily tune the attenuation pole frequency at the stopband. For enhancing the poor skirt property at the cutoff frequency of the Single Stub ‘II Type’ DGS cell, we have obtained the steep slope attenuation characteristic by combining the rectangular slot on both sides of the DGS. This type of the LPF with the proposed structure can be made more smaller than the existing filters and be used to find the various applications for eliminating the hamonics and spurious mode at WLL and the 2.4 GHz ISM band systems.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.8A
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• pp.620-625
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• 2003

The coplanar waveguide bandpass filter using folded-line stepped-impedance resonators(SIRs) is proposed. The folded-line SIR has about λ/8 length using the short-circuited end on coplanar waveguide. It make that the bandpass filter has the half size in comparison with general λ/4 SIR filter. In this paper, we derive the equivalent circuit and design the bandpass filter by using that. We design and fabricate the bandpass filter which has 5 GHz center frequency and 3 % fractional bandwidth. The measurement results fur 4-pole folded SIR bandpass filter agreed well with full-wave simulation and equivalent circuit results. The fabricated bandpass filter has a good spurious characteristic, which the harmonic frequency appeared at 2.5f$\_$0/). The proposed folded-line SIR bandpass filter are applicable for MMIC and High-Tc superconducting filters. bandwidth.

• Transactions on Electrical and Electronic Materials
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• v.7 no.4
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• pp.196-203
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• 2006

An air-gap type FBAR was designed using Leach equivalent model for analyzing a vertical structure of the FBAR. For the top electrode, Pt, and the bottom electrode, Au, of $1.2{\mu}m$ thickness and the piezoelectric of 0.8,urn thickness, the resonance and anti-resonance occurred at 2.401 GHz and 2.460 GHz, respectively. $S_{11}$ was increased and $S_{21}$ was decreased as the resonance area of FBAR was widened. We observed the characteristics of insertion loss, bandwidth and out-of-band rejection of ladder-type FBAR BPF by changing resonance areas of series and shunt resonators and by adding stages. As the resonance area of series resonator was increased, insertion loss was improved but out-of-band rejection was degraded. And as the resonance area of shunt resonator was increased, insertion loss was degraded a little but out-of-band rejection was improved even without adding stages. We, also, changed the shape of the resonance area from square shape to rectangle shape to examine the effects of the resonator shape on the characteristics of the BPF. The best performances were observed when the sizes of series and shunt resonator are $150{\mu}m{\times}l50{\mu}m\;and\;5{\mu}m{\times}50{\mu}m$, respectively. Out-of-band rejection was improved about 10dB and bandwidth was broadened from 30MHz to 100MHz utilizing inductor tuning on $2{\times}2\;and\; 4{\times}2$ ladder-type BPFs.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.3
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• pp.262-268
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• 2010

In this paper, a high power active tunable bandpass filter made of dielectric resonators and varactor diodes is designed using the active capacitance circuit generating negative resistance for tuning cellular TX, RX band. An active capacitance circuit's series feedback circuit using GaAs HFET whose $P_{1dB}$ is 32 dBm is used for compensating the losses from the varactor diodes of the tunable bandpass filter. The tuning elements, the varactor diodes are used as the back-to-back configuration to achieve the high power performance, The designed active capacitance circuit improves the insertion loss characteristics. The designed 2-stage active tunable dielectric bandpass filter at cellular band can cover from 800 MHz to 900 MHz. The insertion losses at 836 MHz and 881.5 MHz with 25 MHz bandwidth are 0.48 dB and 0.39 dB, respectively. The $P_{1dB}$ of the designed bandpass filter at TX and RX band are measured as 19.5 dBm and 23 dBm, respectively.

• Journal of the Korean Ceramic Society
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• v.40 no.3
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• pp.268-272
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• 2003

The microstructures of tungsten films were controlled by changing the sputtering pressure and substrate temperatures during D.C. sputter deposition. As the sputtering pressures were decreased, the sputtered models of the tungsten films were changed from the zone I model to zone T model. The tungsten film having zone T model microstructure shows a resistivity of 10${\times}$10$\^$-6/ $\Omega$-cm and (110) preferred orientation. FBAR with Bragg reflector composed of $SiO_2$and tungsten films having zone T model microstructure shows quality factor, Q$\_$s/, of 494 and K$\_$eff/$\^$2/ of 5.5% due to the high acoustic impedance and the smooth surface.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1523-1525
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• 2003

Due to the rapid development of wireless networking system, researches on the communication devices are mainly focus on microwave frequency devices such as filters, resonators, and phase shifters. Among them, Film bulk acoustic resonator (FBAR) has been paid extensive attentions for their high performance. In this research, ZnO thin films were deposited by RF-magnetron sputtering on Al/$SiO_2$/Si wafer and then crystalline properties and surface morphology were examined. To measure crystalline structure and surface morphology X-ray diffraction (XRD) and Scanning Electron Microscope (SEM) were employed. It was showed that crystalline properties of ZnO thin films were strongly dependant on the deposition conditions. As increasing the deposition temperature and the deposition pressures, the peak intensities of ZnO(002) plane were increased until $300^{\circ}C$, then decreased rapidly. At the sputtering conditions of RF power of 213 W and working pressure of 15 m Torr, ZnO film had excellent c-axis orientation, surface morphology, and adhesion to the substrate. In conclusion we optimized smooth surface with very small grains as well as highly c-axis oriented ZnO film for FBAR applications.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.7
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• pp.1272-1278
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• 2009

The present paper is purposeful that I compare the materialization method of the filter of UIR and SIR, then make two filters of different methods, so both are useful. The structure of the method of UIR is simple, so it is used a commercial point of view that the client gets the characteristics what he wants. However, the needs of companies when compared to the same standards, a little more cheaply in price, a little smaller in size, better performance characteristics are expected. In this regard, the method of SIR is smaller than UIR in size, but it shows the similar characteristics of UIR, so it is expected that holds a dominant position in competitive power. In this paper, based on these conditions, I compared the methods of SIR and UIR after the design and production. The standards are Insertion Loss is less than 0.8dB, Return Loss is above 20.0dB, and the Ripple is within 0.3dB. The center frequency is settled 881.5MHzband that TX Band is used by CDMA(SKT). I compared in the same conditions in Bandwidth 25.0MHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.10
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• pp.2351-2358
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• 2014

In this paper, a design method for a compact CPW-fed slot antenna using SRRs is studied. The structure of the proposed slot antenna is a rectangular slot antenna loaded with SRR conductors inside the slot to reduce the antenna size. Optimal design parameters are obtained by analyzing the effects of the gap between the SRR conductors and slot, and the width of the SRR conductors on the input VSWR characteristic. The optimized compact slot antenna operating at 2.45 GHz band is fabricated on an FR4 substrate with a dimension of 36 mm by 30 mm. The length of the proposed compact slot antenna is reduced to 14.3% compared to that of a conventional rectangular slot antenna. Experiment results show that the antenna has a desired impedance characteristic with a frequency band of 2.4-2.49 GHz for a VSWR < 2, and measured gain of 2.3 dBi at 2.45 GHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.1
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• pp.19-25
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• 2015

In this paper, a design method for a CPW-fed slot antenna for harmonic suppression is studied. The structure of the proposed slot antenna is a rectangular slot antenna appended with stepped impedance resonators (SIRs) at both ends of the slot symmetrically. Optimal design parameters are obtained by analyzing the effects of the length and width of the SIRs on the input reflection coefficient. The optimized harmonic-suppressed slot antenna operating at 2.45 GHz WLAN band is fabricated on an FR4 substrate with a dimension of 42 mm by 30 mm. The slot length of the proposed harmonic-suppressed slot antenna is reduced to 33.3% compared to that of a conventional rectangular slot antenna owing to the appended SIRs. Experiment results show that the antenna has a desired impedance characteristic with a frequency band of 2.39-2.49 GHz for a VSWR < 2, and a measured gain of 2.5 dBi at 2.45 GHz.