• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.118-119
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• 2005

PRAM (Phase Change Random Access Memory) is well known to use reversible phase transition between amorphous (high resistance) and crystalline (low resistance) states of chalcogenide thin film by electrical Joule heating. In this paper, we introduce a stack-type PRAM device with a novel GST/TiAlN structures (GST and a heating layer of TiAlN), and report its electrical switching properties. XRD analysis result of GST thin film indicates that the crystallization of the GST film start at about $200^{\circ}C$. Electrical property results such as I-V & R-V show that the phase change switching operation between set and reset states is observed, as various input electrical sources are applied.

• 경영정보학연구
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• 제16권3호
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• pp.135-160
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• 2014

SNS는 소통의 매체이자 공유와 인맥관리를 위한 도구로서의 긍정적인 측면을 제공한다. 그러나 최근 들어 페이스북, 트위터와 같은 개방형 SNS에서 불특정 다수와의 소통에 대한 피로감과 사생활 노출에 대한 불안감 증가와 같은 부정적인 측면들이 나타나고 있다. 이로 인해 SNS 이용자들은 서비스 이용중단을 결정하거나 특정 지인들과 그룹을 형성하여 소통하는 폐쇄형 SNS로 서비스 전환을 결정한다. 하지만 개방형 SNS가 약한 연결 관계 속에서도 지속적으로 새로운 관계를 확산시키고 다양한 정보와 콘텐츠를 공유할 수 있는 환경을 제공하며 다양한 경제 및 사회적 가치를 창출한다는 점에서 SNS 이용자들이 개방형 SNS에서 폐쇄형 SNS로 이동하는 요인에 대해 살펴보는 것은 중요한 의미를 가질 것이라 판단된다. 이를 위해 본 연구에서는 인간의 이주를 설명하는 유용한 프레임워크로 알려진 Push-Pull-Mooring 모형을 근거로 SNS 전환의도에 영향을 미치는 요인을 도출하고 실증분석을 수행하였다. 분석 결과, 개방형 SNS의 부정적 요인으로 제안한 푸쉬 효과의 약한 연결성과 프라이버시우려, 폐쇄형 SNS의 긍정적 요인으로 제안한 풀 효과의 즐거움, 소속감이 폐쇄형 SNS으로의 전환의도에 유의한 영향을 미치는 것으로 나타났다. 또한, SNS 이용자의 상황적 요인으로 제안한 무어링 효과 중 SNS 피로감은 푸쉬 효과와 SNS 전환의도 간의 관계를, 그리고 사용자저항은 풀 효과와 SNS 전환의도 간의 관계를 강화시키는 것으로 나타났다. 본 연구의 결과는 개방형 SNS와 폐쇄형 SNS가 시장에서 함께 성장할 수 있는 정책을 제안하고 이용자들의 인식 전환을 유도하는 계기가 될 수 있을 것으로 기대한다.

• Journal of Electrical Engineering and Technology
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• 제4권1호
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• pp.66-78
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• 2009

This paper introduces the design of a fuzzy logic controller in conjunction with direct torque control strategy for a Permanent Magnet synchronous machine. A stator flux angle mapping technique is proposed to reduce significantly the size of the rule base to a great extent so that the fuzzy reasoning speed increases. Also, a fuzzy resistance estimator is developed to estimate the change in the stator resistance. The change in the steady state value of stator current for a constant torque and flux reference is used to change the value of stator resistance used by the controller to match the machine resistance.

• 반도체디스플레이기술학회지
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• 제21권3호
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• pp.80-86
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• 2022

In this paper, the optimal design and circuit simulation verification results of an LLC resonant half-bridge dc-dc converter using a steady-state model with internal loss resistance are reported. Above all, the input/output voltage gain and frequency characteristic equations in the steady-state were derived by reflecting the internal loss resistance in the equivalent circuit. Based on the results, an LLC resonant half-bridge dc-dc converter with an input voltage of 360-420V, an output voltage of 54V, and a maximum power of 3kW was designed, and to verify the design, the PSIM circuit simulation was executed to compare and analyze the result. In particular, the operating range of the converter could be drawn from the frequency characteristic graph of the voltage gain, and when the converter was operated under light and maximum load conditions, it was confirmed that similar results were obtained by comparing simulation results and calculation results in the switching frequency characteristic graph. In addition, the change of the switching frequency with respect to the load current at each input voltage was compared with the calculated value and the simulation result. As a result, it was possible to confirm the usefulness of the analysis result reflecting the internal loss resistance proposed in this paper and the process of the optimal design.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.66-79
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• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

• Journal of Magnetics
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• 제10권2호
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• pp.48-51
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• 2005

The spin transfer induced magnetization switching has been reported to occur in magnetic multilayer structures whose scope usually consists of one stack of ferromagnetic / non-ferromagnetic / ferromagnetic (F / N / F) materials. In this work, it is shown that: 1) Copper used as a buffer layer between the free Co and the Au cap-layer can clearly increase the probability to get the spin transfer induced magnetization switching in a simple spin valve Co 11 / Cu 6/ Co 2 (nm); 2) Furthermore, when Ruthenium is simultaneously applied as a buffer layer on the Si-substrate, the critical switching currents can be reduced by $30\%$, and the absolute resistance change delta R $[{\Delta}R]$ of that stack can be enlarged by $35\%$. The enhancement of the spin transfer induced magnetization switching can be ascribed to a lower local stress in the thin Co layer caused by a better lattice match between Co and Cu and the smoothening effect of Ru on the thick Co layer.

• 조명전기설비학회논문지
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• 제27권5호
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• pp.74-80
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• 2013

This paper presents the transient behavior of the switching surge voltages generated by interruption of DC ground fault currents flowing through metal flexible conduits. All fault circuits consist of line parameters such as resistance, inductance, capacitance and conductance. The use of nonmagnetic metal conduits should be taken into account in order to reduce the inductance of battery charger distribution circuits. The frequency-dependent circuit parameters of metal flexible conduits were measured. The switching surge voltages generated at the ground fault circuit consisted of steel-galvanized alloy and aluminium conduits were investigated. As a result, the impedances of metal flexible conduits are significantly increased over the range of the frequency above 10 kHz and the switching surge voltages generated along aluminium flexible conduit are lower than those along steel-galvanized alloy conduit when DC fault current is interrupted.

• 전기전자학회논문지
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• 제25권1호
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• pp.15-24
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• 2021

본 논문에서는 CDT(Conventional Double Trench) MOSFET보다 스위칭 시간과 손실이 적은 1700 V EPDT(Extended P+ shielding floating gate Double Trench) MOSFET 구조를 제안하였다. 제안한 EPDT MOSFET 구조는 CDT MOSFET에서 소스 Trench의 P+ shielding 영역을 늘리고 게이트를 N+와 플로팅 P- 폴리실리콘 게이트로 나누었다. Sentaurus TCAD 시뮬레이션을 통해 두 구조를 비교한 결과 온 저항은 거의 차이가 없었으나 Crss(게이트-드레인 간 커패시턴스)는 게이트에 0 V 인가 시에는 CDT MOSFET 대비 32.54 % 줄었고 7 V 인가 시에는 65.5 % 감소하였다. 결과적으로 스위칭 시간 및 손실은 각각 45 %, 32.6 % 줄어 스위칭 특성이 크게 개선되었다.

• 전자공학회논문지
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• 제51권8호
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• pp.172-177
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• 2014

두 가지 $N_2$ 프로세스(성장 중 반응성 질소 그리고 질소 플라즈마 경화)에 의해 특별히 개선된 AsGeTeS 위에 만들어진 문턱 스위칭 소자를 제시하고자 한다. 적층과 열적 안정적인 소자 구조가 가능한 두 스텝 프로세스에서의 질소의 사용은 나노급 배열 회로의 응용에서의 스위치와 메모리 소자의 집적을 가능하게 한다. 이것의 좋은 문턱 스위칭 특성에도 불구하고 AsTeGeSi 기반의 스위치는 높은 온도에서의 신뢰성 있는 저항 메모리 적용에 중요한 요소를 가진다. 이것은 보통 Te의 농도 변화에 기인한다. 그러나 chalconitride 스위치(AsTeGeSiN)은 $30{\times}30(nm^2)$ 셀에서 $1.1{\times}10^7A/cm^2$가 넘는 높은 전류 농도를 갖는 높은 온도 안정성을 보여준다. 스위치의 반복 능력은 $10^8$번을 넘어선다. 더하여 AsTeGeSiN 선택 소자를 가진 TaOx 저항성 메모리를 사용한 1 스위치-1저항으로 구성된 메모리 셀을 시연하였다.

• Journal of Electrical Engineering and Technology
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• 제2권4호
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• pp.468-477
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• 2007

The DTC of voltage source inverter-fed PMSMs is based on hysteresis controllers of torque and flux. It has several advantages, namely, elimination of the mandatory rotor position sensor, less computation time, and rapid torque response. In addition, the stator resistance is the only parameter, which should be known, and no reference frame transformation is required. The DTC theory has achieved great success in the control of induction motors. However, for the control of PMSM drives proposed a few years ago, there are many basic theoretical problems that must be clarified. This paper describes an investigation into the effect of the zero voltage space vectors in the DTC system and points out that if using it rationally, not only can the DTC of the PMSM drive be driven successfully, but torque and flux ripples are reduced and overall performance of the system is improved. The implementation of DTC in PMSM drives is described and the switching tables specific for an interior PMSM are derived. The conventional eight voltage-vector switching table, which is namely used in the DTC of induction motors does not seem to regulate the torque and stator flux in a PMSM well when the motor operates at low speed. Modelling and simulation studies have both revealed that a six voltage-vector switching table is more appropriate for PMSM drives at low speed. In addition, the sources of difficulties, namely, the error in the detection of the initial rotor position, the variation of stator resistance, and the offsets in measurements are analysed and discussed.