• The Korean Journal of Physiology
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• 제24권2호
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• pp.377-388
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• 1990

Ca movements during the late plateau phase in rabbit atrium implicate Na-Ca exchange. In single atrial cells isolated from the rabbit the properties of the inward current of Na-Ca exchange were investigated using the whole cell voltage clamp technique. The inward currents were recorded during repolarization following brief 2 ms depolarizing pulse to +40 mV from a holding potential of -70 mV. Followings are the results obtained: 1) When stimulated every 30 sec, the inward currents were activated and reached peak values $6{\sim}12\;ms$ after the beginning of depolarizing pulse. The mean current amplitude was 342 pA/cell. 2) The current decayed spontaneously from the peak activation and the timecourse of the relaxation showed two different phases: fast and slow phase. 3) The recovery of the inward current was tested by paired pulse of various interval. The peak current recovered exponentialy with a time course similar to that of Ca current recovery. 4) Relaxation timecourse was also affected by pulse interval and time constant was reduced almost linearly according to the decrease of pulse interval between 30 sec and 1 sec. 5) The peak inward current was increased by long prepulse stimulation, Bay K, isoprenaline or c-AMP. 6) The relaxation time constant of the inward current was prolonged by Bay K or c-AMP, and shortened by isoprenaline. From the above results, it could be concluded that increase of the calcium current potentiates and prolongs intracellular calcium transients, while shortening of the timecourse by isoprenaline or short interval stimulations might be due to the facilitation of Ca uptake by SR.

• 전기학회논문지
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• 제56권1호
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• pp.117-122
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• 2007

LB method is one of the most interesting technique to arrange certain molecular groups at precise position relative to others. Also, the LB deposition technique can fabricate extremely thin organic films with a high degree of control over their thickness and molecular architecture. In this way, new thin film materials can be built up at the molecular level, and the relationship between these artificial structures and the properties of materials can be explored. In this paper, evaluation of physical properties was made for dielectric relaxation phenomena by the detection of the surface pressures and displacements current on the monolayer films of phospolipid monomolecular DLPC. Lipid thin films were manufacture by detecting deposition for the accumulation and the current was measured after the electric bias was applied across the manufactured MIM device. It is found that the phospolipid monolayer of dielectric relaxation takes a little time and depend on the molecular area. When electric bias is applied across the manufactured MIM device by the deposition condition of phospolipid mono-layer, it wasn't breakdown when the higher electric field to impress by increase of deposition layers.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 추계학술대회
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• pp.250-255
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• 2004

In this paper, we established baseline information and insight on residual stress relief mechanism associated with furnaced and local PWHT(post weld heat treatment) operation. Based on FEM analysis results, we suggested that furnaced PWHT stress relief mechanism was based on creep relaxation and local PWHT stress relief mechanism involved complicated interactions between plasticity and creep. In case of furnaced PWHT, significant stress relaxation was occurred in the early stage of PWHT. In case of local PWHT, stress relaxation magnitude was increased as PWHT time increased. Finally, We have proposed that detailed furnaced and local PWHT procedure, and qualification criteria to support current codes of practices.

• Journal of Information Technology Applications and Management
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• 제13권4호
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• pp.291-302
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• 2006

The current paper proposes fast distributed constrained power control (FDCPC) with a non stationary relaxation factor as the next power update for CDMA cellular power control systems. A review is also given of unconstrained control algorithms: distributed power control (DPC), unconstrained second order power control (USOPC), and DPC with a stationary relaxation factor (DPCSRF) To improve the performance of outage probability convergence, DCPC with a non stationary relaxation factor (FDCPC) is proposed. Under constrained conditions, the convergence rate of FDCPC is shown to outperform that of DCPC and constrained second order power control(CSOPC).

• 한국초전도ㆍ저온공학회논문지
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• 제20권1호
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• pp.1-10
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• 2018

The improvement of critical current properties of $REBa_2Cu_3O_{7-x}$ (REBCO) coated conductors by introducing artificial pinning centers (APCs) is examined with respect to the field-angle anisotropy, high-field performance and relaxation property with time. Nano-rods along the c-axis introduced by PLD method and isotropic nano-particles introduced by TFA-MOD method are treated. The theoretical analysis is also shown to understand the effect of APCs quantitatively. The effects of superconducting layer thickness that influences the high-field performance and relaxation property are also discussed. It is shown that the upper critical field, which is another important factor to determine the high-field property, can be improved by introduction of APCs through electron scattering at interfaces with the superconducting matrix. The optimum critical current property can be obtained by properly designing the morphology and number density of APCs and the superconducting layer thickness.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권10호
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• pp.504-508
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• 2001

The$(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode $(Pt-TiN /SiO_2Si)$ using RF sputtering method at various deposition temperature. The crystallinity of thin films was increased with increased of deposition temperature n the temperature range of 200~500 $[^{\circ}C]$. The capacitance changes almost linearly in temperature ranges of -80~+90$[^{\circ}C]$. All SCT thin films used in the study the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature.

• Transactions on Electrical and Electronic Materials
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• 제15권2호
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• pp.100-102
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• 2014

$Ag(Ta,Nb)O_3$ materials have a perovskite structure with a low loss tangent. These materials have been widely researched for their applications as high-frequency, passive components. Also, $Ag(Ta,Nb)O_3$ materials have weak frequency dispersion with high dielectric permittivity which gives them enormous potential for use in electronic components, including the filters, and embedded capacitors. Therefore, our research will discuss the structural and electrical relaxation properties of $Ag(Ta_{0.8}Nb_{0.2})O_3$ ceramics for device applications. We will investigate using X-ray diffraction to understand their structural properties and will analyze voltage dependent leakage current and timedependent relaxation behavior to understand their material properties.

• 전자공학회논문지 IE
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• 제49권1호
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• pp.7-11
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• 2012

본 논문에서는 인지질 단분자인 DMPC 유기초박막에 압력 자극을 이용하여 표면압과 변위전류의 검출에 따른 유전 완화현상에 대한 물리적 특성 평가를 하였다. 유기초박막에서 약간의 유전 완화 시간이 소요되었는데 이는 분자 영역에 의존한다는 사실을 알 수 있었다. 또한, 유기박막의 누적 조건에 의해 제작된 MIM 소자에 전압을 인가시, LB막의 누적층수가 증가 할수록 저항이 증가한다는 것을 알 수 있었는데 이는 유기초박막의 층수가 증가하여 전극간의 거리가 멀어질수록 더 높은 전계에서도 파괴되지 않는 절연특성이 나타남을 알 수 있었으며 나노단위의 유기초박막의 비교적 양호한 절연성을 확인, 제시 하였다.

• 한국전기전자재료학회논문지
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• 제11권1호
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• pp.41-47
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• 1998

The (Sr$_1$-\ulcorner.Ca\ulcorner)TiO$_3$(0.05 x 0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[$^{\circ}C$] in a reducing atmosphere($N_2$gas). After being fired in a reducing atmosphere, metal oxides(CuO) was painted on the both surface of the specimens to diffuse to the grain boundary. The capacitance changes slowly and almost linearly in the temperature region of -40~+85[$^{\circ}C$]. The capacitance characteristics appears a stable value within $\pm$10[%]. According to increase of the frequency as a functional of temperature, all specimens used in this study showed the dielectric relaxation, and the relaxation frequency was above 10\ulcorner[Hz]. The capacitance is almost unchanged below about 20[V] but it decrease slowly over 20[V]. The voltage-current characteristics of specimens observed in the temperature range of 25~125[$^{\circ}C$] as the current increased appears that it is due to space charge condensed to interface between grain and grain boundary.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권10호
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• pp.559-563
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• 2000

The $(Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films are deposited on Pt-coated(Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. Also the composition of SCT thin films were closed to stoichiometry(1.081∼1.117 in A/B/ ratio). The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80∼+90[^${\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 2000[kHz]. The current-voltage characteristics of SCT15 thin films showed the increasing leakage current as the measuring temperature increase.