• Korean Journal of Materials Research
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• v.20 no.3
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• pp.161-166
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• 2010

The ac, dc conductivity and dielectric properties of $DyCoO_3$ were reported in the temperature range of 77 - 300K and in the frequency range of 20 Hz - 100 kHz. It was observed that at low temperature, ac conductivity is much higher than dc conductivity and the hopping carrier between localized states near the Fermi level was the dominant loss mechanism. A comparison of the measured ac conductivity $\sigma(\omega)$ was made with some of the models of hopping conductivity of the proposed earlier in the literature. It was observed that in $DyCoO_3$ the measured ac conductivity, over the entire frequency and temperature region, can be explained reasonably well by assuming two contributions $\sigma_1(\omega)$ and $\sigma_2(\omega)$ to the measured $\sigma(\omega)$. The first, $\sigma_1(\omega)$, which dominates at low temperature, may be due to impurity conduction in a small polaron; the second, $\sigma_2(\omega)$, which dominates at higher temperatures, depending on the frequency of measurements, may be due to the hopping of a small polaron and is reasonable for the dielectric relaxation peak.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.10
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• pp.23-28
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• 2010

In this paper, we investigated the polarization effects on the electrical and structural characteristics of AlGaN/GaN HEMT. Both the Al mole-fraction and the barrier thickness of AlGaN, which determine the profiles of a two-dimensional electron gas, were simulated to obtain the optimum HEMT structure affecting the polarization effect. As a results, we found that the amount of bound sheet charges was increased by 16% and the maximum drain current density ($I_D$,max) was increased by more than 37%, while AI mole fractions are changed from 0.3 to 0.4. We also observed a 37% improvement in maximum drain current density ($I_D$,max) by increasing AIGaN layer thickness from 17 to 38 nm. However when AlGaN layer thickness reached the critical thickness, DC characteristics were dramatically lowered due to 'bulk' relaxation in AlGaN layer.

• The Korean Journal of Physiology and Pharmacology
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• v.9 no.2
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• pp.95-101
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• 2005

In the heart, $Na^{+}-Ca^{2+}$ exchange (NCX) is the major $Ca^{2+}$ extrusion mechanism. NCX has been considered as a relaxation mechanism, as it reduces global $[Ca^{2+}]_i$ raised during activation. However, if NCX locates in the close proximity to the ryanodine receptor, then NCX would curtail $Ca^{2+}$ before its diffusion to global $Ca^{2+}_i$ This will result in a global $[Ca^{2+}]_i$ decrease especially during its ascending phase rather than descending phase. Therefore, NCX would decrease the myocardial contractility rather than inducing relaxation in the heart. This possibility was examined in this study by comparing NCX-induced extrusion of $Ca^{2+}$ after its release from SR in the presence and absence of global $Ca^{2+}_i$ transient in the isolated single rat ventricular myocytes by using patch-clamp technique in a whole-cell configuration. Global $Ca^{2+}_i$ transient was controlled by an internal dialysis with different concentrations of BAPTA added in the pipette. During stimulation with a ramp pulse from +100 mV to -100 mV for 200 ms, global $Ca^{2+}_i$ transient was suppressed only mildly, and completely at 1 mmol/L, and 10 mmol/L BAPTA, respectively. In these situations, ryanodine-sensitive inward NCX current was compared using $100{\mu}mol/L$ ryanodine, $Na^+$ depletion, 5 mmol/L $NaCl_2$ and $1{\mu}mol/L$ nifedipine. Surprisingly, the result showed that the ryanodine-sensitive inward NCX current was well preserved after 10 mmol/L BAPTA to 91 % of that obtained after 1 mmol/L BAPTA. From this result, it is concluded that most of the NCX-induced $Ca^{2+}$ extrusion occurs before the $Ca^{2+}$ diffuses to global $Ca^{2+})i$ in the rat ventricular myocyte.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.9
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• pp.8-13
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• 2008

Noise in homogeneous extrinsic semiconductor samples is calculated due to distributed diffusion noise sources. As the length of the device shrinks at a fixed bias voltage, the ac-wise short-circuit noise current shows excess noise as well as thermal noise spectra. This excess noise behaves like a full shot noise when the channel length becomes very small compared with the extrinsic Debye length. For the first time, the analytic formula of the excess noise in extrinsic semiconductors from velocity-fluctuation noise sources is given for finite frequencies. This formula shows the interplay between transit time, dielectric relaxation time, and velocity relaxation time in determining the terminal noise current as well as the carrier density fluctuation. As frequency increases, the power spectral density of the excess noise rolls off. This formula sheds light on noise in nanoscale MOSFETs where quasi-ballistic transport plays an important role in carrier transport and noise.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11b
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• pp.27-32
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• 2004

Maxwell displacement current (MDC) measurement has been employed to study the dielectric property of Langmuir-films. MDC flowing across monolayers is analyzed using a rod-like molecular model. A method for determining the dielectric relaxation time ${\tau}$ of floating 'monolayers on the water surface is presented. MDC floing across monolayers is analyzed using a rod-like molecular model. It is revealed that the dielectric relaxation time ${\tau}$ of monolayers in the isotropic polar orientational phase is determined using a liner relationship between the monolayer compression speed a and the molecular area Am. Compression speed a was about 30,40,50mm/min. LB layers of Arachidic acid deposited by LB method were deposited onto slide glass as Y-type film.The physicochemical properties of the LB films were examined by UV absorption spectrum, SEM and AFM. The structure of manufactured device is Au/Arachidic acid/Al, the number of accumulated layers are 3~9. Also, we then examined of the MIM device by means of I-V characteristic of the device is measured from -3 to +3[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

• Transactions of the Korean hydrogen and new energy society
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• v.34 no.2
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• pp.178-186
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• 2023

Three activation methods (constant voltage, current cycling, and hydrogen pumping) were applied to investigate the effects on the performance of the membrane electrode assembly (MEA) loaded with PtCo/C catalyst. The current cycling protocol took the shortest time to activate the MEA, while the performance after activation was the worst among the all activation methods. The constant voltage method took a moderate activation time and exhibited the best performance after activation. The hydrogen pumping protocol took the longest time to activate the MEA with moderate performance after activation. According to the distribution of relaxation time analysis, the improved performance after the activation mainly comes from the decrease of charge transfer resistance rather than the ionic resistance in the cathode catalyst layer, which suggests that the existence of water on the electrode is the key factor for activation.

• Water Engineering Research
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• v.3 no.2
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• pp.75-84
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• 2002

An Euler-Lagrange two-phase flow model is presented fur simulation sheet-flow transport under wave and current. The flow is computed by solving the Reynolds Averaged Navier-Stokes equation in conjunction with the k-$\varepsilon$ turbulence model for turbulence closure. The sediment transport is introduced as a motion of granular media under the action of unsteady flow from the Lagragian point of view. In other word, motion of every single particle is numerically traced with Movable Bed Simulator (MBS) code based on the Distinct Element Method (DEM), in which the frequent interparticle collision of the moving particles during the sheet-flow transport is sophisticatedly taken into account. The particle diameter effect on time-dependent developing process of sheet-flow transport is investigated, by using three different diameter sizes of sediment. The influence of an imposed current on oscillatory sheet-flow transport is also investigated. It is concluded that the sediment transport rate increases due to the relaxation process related to the time-lag between flow velocity and sediment motion.

• Progress in Superconductivity and Cryogenics
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• v.22 no.4
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• pp.62-66
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• 2020

We fabricated superconducting quantum interference devices (SQUIDs) based on Nb Josephson junctions, and characterized the key parameters of the SQUIDs. The SQUIDs are double relaxation oscillation SQUIDs (DROSs) having larger flux-to-voltage transfer coefficient than the standard DC-SQUIDs. SQUID sensors were fabricated by using Nb junction technology consisted of a DC magnetron sputtering and a conventional photolithography process. In multichannel SQUID systems for whole-head magnetoencephalography measurement with a helmet-type SQUID array, we need about 336 SQUID sensors for each system. In this paper, we fabricated a few hundred SQUID sensors, measured the critical current, flux modulation voltage and decided if each tested SQUID can be used for the multichannel systems. As the criterion for the acceptance of the sensors, we chose the critical current and amplitude of the modulation voltage to be 8 ㎂ and 80 ㎶, respectively. The average critical current of the SQUIDs was 10.58 ㎂. The typical flux noise of the SQUIDs with input coil shorted was 2 μΦ0/√Hz at white region.

• Journal of the Korean Electrochemical Society
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• v.11 no.3
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• pp.184-189
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• 2008

Inhibitive effects of chromate, phosphate, sulfate, and borate on chloride pitting corrosion of Al have been investigated using cyclic voltammetry. During the anodic oxide growth, the critical concentration of chloride for pit initiation decreased in the order: chromate > phosphate > sulfate > borate, and the maximum pitting current density increases in the reverse order: chromate < phosphate < sulfate < borate. The decreasing pitting current density was observed in the successive polarization cycles, which was attributed to the aging of Al oxides and field relaxation at oxide/solution interface.

• 전기의세계
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• v.26 no.5
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• pp.83-89
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• 1977

This paper described the minority carrier lifetime in Si epitaxial layer, and also the voltage (V) versus current (I) characteristics of high resistivity Si epitaxial layer0substrate junction. The measured lifetime in Si epi-layer was much shorter than in bulk, and the temperature dependence of lifetime was found to agree well with Shockley-Read model of recombination which applies to high resistivity n-type materials. The V-I curve showed; an ohmic region (I.var.V), a sublinear region (I.var.V$^{1}$2/), a space charge limited current region (I.var.V$^{2}$), and finally a negative resistance region. We investigated these phenomena by the theory of the relaxation semiconductor.