• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.75-87
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• 1996

This review is presented under the following headings: 1.Introduction 1.1 Brief review of the properties of AlN 1.2 Historical survey of work on ceramic and single crystal AlN 2.Thermochemical background 3.Crystal growth 4.Doping 5.Potential applications and future work The known properties of AlN which make it of interest for various are discussed briefly. The properties include chemical stability, crystal structure and lattice constants, refractive indices and other optical properties, dielectric constant, surface acoustic wave velocity and thermal conductivity. The history of work in single crystals, thin films and ceramics are outlined and the thermochemistry of AlN reviewed together with some of the relevant properties of aluminium and nitrogen; the problems encountered in growing crystals of AlN are shown to arise directly from these thermochemical relationships. Methods have been reported in the literature for growing AlN crystals from melts, solution and vapour and these methods are compared critically. It is proposed that the only practicable approach to the growth of AlN is by vapour phase methods. All vapour based procedures share the share the same problems: $.$the difficulty of preventing contamination by oxygen & carbon $.$the high bond energy of molecular nitrogen $.$the refractory nature of AlN (melting point~3073K at 100ats.) $.$the high reactivity of Al at high temperatures It is shown that the growth of epitactic layers and polycrystalline layers present additional problems: $.$chemical incompatibility of substrates $.$crystallographic mismatch of substrates $.$thermal mismatch of substrates The result of all these problems is that there is no good substrate material for the growth of AlN layers. Organometallic precursors which contain an Al-N bond have been used recently to deposit AlN layers but organometallic precursors gave the disadvantage of giving significant carbon contamination. Organometallic precursors which contain an Al-N bound have been used recently to deposit AlN layers but organometallic precursors have the disadvantage of giving significant carbon contamination. It is conclude that progress in the application of AlN to optical and electronic devices will be made only if considerable effort is devoted to the growth of larges, pure (and particularly, oxygen-free) crystals. Progress in applications of epi-layers and ceramic AlN would almost certainly be assisted also by the availability of more reliable data on the pure material. The essential features of any stategy for the growth of AlN from the vapour are outlined and discussed.

• Journal of Adhesion and Interface
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• v.24 no.3
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• pp.95-99
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• 2023

In this study, LiDAR-detectable black materials are synthesized by coating and reduction of titanium dioxide onto plate-type natural mica, which evaluated practical LiDAR verification. In detail, black TiO₂@Mica materials are fabricated by utilizing a sol-gel reaction to coat titanium dioxide onto natural mica, followed by reduction using sodium tetrahydridoborate. Subsequently, Black TiO₂@Mica materials are dispersed in hydrophilic transparent varnish and sprayed onto the glass substrate to assess applicability as paints. As a result, Black TiO₂@Mica-based paints exhibit true blackness (L^*=12.1) and a higher NIR reflectance (30.2 R%). In addition, it was confirmed that as-synthesized Black TiO₂@Mica materials are successfully recognized by a LiDAR sensor. This phenomenon is attributed to Fresnel's reflection law, in which light reflection occurs at the interface between natural mica and titanium dioxide with different refractive indices. In this regard, the findings of the study are expected to contribute to the potential utilization of LiDAR-detectable materials in various fields such as autonomous vehicles, robotics, and drones.