• Journal of the Institute of Electronics Engineers of Korea TC
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• v.39 no.3
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• pp.158-164
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• 2002

2-6 GHz digital phase shifter module has been designed and fabricated. For the broadband operation and performance, MMIC phase shifter chip for phase shifter module was designed and fabricated by using the reflection-type circuits with Lange coupler. The fabricated phase shifter module shows 6.1$^{\circ}$RMS phase error, 13.5 dB maximum insertion loss, and 8 dB and 10 dB input and output return losses, respectively. Computer controlled measurement systems are realized in order to get the measured data of 32 phase states. The RMS insertion phase error and the average insertion loss deviation among 8${\times}$8 modules for the phased-array system are less than ${\pm}$0.5$^{\circ}$and ${\pm}$0.5 dB, respectively. The size of fabricated phase shifter module is 45 ${\times}$ 22.5 ${\times}$60㎣.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.6
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• pp.582-589
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• 2002

This paper presents 12.2 GHz ~ 12.7 GHz frequency band reflection type 5-bit digital phase shifter with constant insertion loss property that was fabricated with relatively low cost's InGaAs HEMT for amplifier. The unavoidable large insertion loss difference between on and off states of HEMT, when it is designed by conventional design theory based on ideal switching device, is removed by transforming the HEMT impedances at on and off states to other proper values connecting a certain length transmission line to HEMT and then applying the conventional design theory. The fabricated 5-bit digital phase shifter shows very good insertion loss properties of less than 1.5 dB insertion loss difference and -4.5 dB ~ -6 dB insertion loss in 35 phase steps at 12.2 GHz ~ 12.7 GHz. These results verify the design method presented in this paper, which is useful to design phase shifter of constant insertion loss with non-ideal switching device.

• Korean Journal of Crystallography
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• v.1 no.1
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• pp.19-28
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• 1990

6H-SiC is a promising material (Eg=3.0eV) for blue light-emitting doide and high-temperature semiconducting device. In the experiment, single crystals of a-SiC have been grown by the sublimation method to fabricate blue light~emitting diode. During the growth of a-SiC single crystals, a temperature Vadient, yonh temperature and pressure ranges were kept 44℃/cm , 1800-1990℃ and 50-1000 mTorr, respectively. Single crystals obtained in Acheson furnace were used as seed crystals. Polarizing microscopy and back-reflection X-ray Laue diffraction showed that the a-SiC crystal was epitaxially and on the seed crytal. It was found by XRD analysis that when other growth conditions were the same, a-SiC was grown at the temperature above 1840℃ and 3C-SiC was gown at lower temperature or under low supersaturation of vapor. The carrier type. concentration and mobility were measured be hole(p-type), 7.6x1014cm-3 and 19cm2V-1sec-1, respectively, by van der Pauw method.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.40-47
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• 2014

In this paper, $Al_2O_3$ film deposited by thermal atomic layer deposition (ALD) with diluted $NH_4OH$ instead of $H_2O$ was suggested for passivation layer and anti-reflection (AR) coating of the p-type crystalline Si (c-Si) solar cell application. It was confirmed that the deposition rate and refractive index of $Al_2O_3$ film was proportional to the $NH_4OH$ concentration. $Al_2O_3$ film deposited with 5 % $NH_4OH$ has the greatest negative fixed oxide charge density ($Q_f$), which can be explained by aluminum vacancies ($V_{Al}$) or oxygen interstitials ($O_i$) under O-rich condition. $Al_2O_3$ film deposited with $NH_4OH$ 5 % condition also shows lower interface trap density ($D_{it}$) distribution than those of other conditions. At $NH_4OH$ 5 % condition, moreover, $Al_2O_3$ film shows the highest excess carrier lifetime (${\tau}_{PCD}$) and the lowest surface recombination velocity ($S_{eff}$), which are linked with its passivation properties. The proposed $Al_2O_3$ film deposited with diluted $NH_4OH$ is very promising for passivation layer and AR coating of the p-type c-Si solar cell.

• PNF and Movement
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• v.19 no.2
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• pp.279-285
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• 2021

Purpose: This study aimed to develop new digital navicular drop test (ND-NDT) equipment and to determine its validity and reliability. Methods: A total of 24 healthy male and female adults, who fully understood the purpose of the study and gave consent to participate in the study, were selected as participants. The NDT and ND-NDT were conducted in the dominant foot of the participants in a random order. For the NDT, the position of the navicular bone was marked with a pen first; then, the height of the navicular bone from the ground was measured in both sitting and standing positions. For the ND-NDT, after the sticker-type reflection markers were attached to the position of the navicular bone, the height of the navicular bone from the ground was measured in both sitting and standing positions. To assess the validity of the diagnostic tests, the same examiner measured the height of the medial longitudinal arch (MLA) three times in both the sitting and standing positions. To assess the inter-rater reliability of the ND-NDT, three examiners, in a random order, attached the sticker-type reflection markers to the position of the navicular bone and then measured the height of the MLA in both positions. Results: In the sitting position, the Pearson correlation coefficient (r) between the two diagnostic tests was very high (r = 0.97) and statistically significant. In the standing position, the Pearson correlation coefficient (r) between the two tests was 0.95, which was also statistically significant. The ICC_2,1 values in the sitting and standing positions were 0.93 and 0.95, respectively, indicating significantly high inter-rater reliability. Conclusion: The ND-NDT equipment showed very high diagnostic validity, as well as excellent inter-rater reliability, indicating the clinical usefulness of the equipment as a diagnostic system for confirming pes planus.

• Korean Journal of Optics and Photonics
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• v.14 no.4
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• pp.399-405
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• 2003

We manufactured a clamp-type optical current transformer (COCT) head using FD10 glass. It was manufactured of two parts of FD10 glass with symmetrical structure and was designed so that light propagates along the critical angle in order to avoid a phase difference with the light within the sensor head at reflection. Also, we measured and analyzed the current of conductor from 0 to 1,000 AT, change of optical power with incidence angle of light, temperature and polarization of light, long-term current measurement using COCT head, and demonstrated the feasibility of manufactured COCT through those experiments.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.521-527
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• 1997

Ruby single crystals of 6-7 mm in dialneter and 20-25 mm in length were grown by the xenon-arc type floating zone method using a self-designed FZHY1, Calcination and sintering conditions were investigated and optimum growth conditions were established for controlling the factors such as growth rates, rotation speeds and cooling rates. Also the available energy levels of $Cr^{3+}$ were calculated from transmission data. The growth direction of the crystals was [1010] direction identified by Laue back reflection pattern. The distribution of refractive indices on the wafer of the grown crystals was homogeneous except for the edges of the wafer. The crystals could be used as a laser material with a wavelength of 693 nm and a metastate level.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1597-1600
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• 2005

Recently, the trends of TFT-LCD are large scale and thin thickness, so, the demands of Light Guide Panel(LGP) which is able to substitute for prism sheets are appeared. Functions of LGP obtaining polarization of light of the prism sheet as well as the incidence and reflection of light are demanded. This prismless type LGP to complete functions of the existing LGP and polarization at once must be supported by micro machining technology of LGP surface. In this research, we have used the STAMPER method for the mass product and In-Line process, and the optimized conditions are established by analyzing the cutting force and conditions according to the material and processing properties when the prismless type LGP mold is fabricated. Parameters of the cutting condition were the workpiece and cutting depth.

• Tunnel and Underground Space
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• v.12 no.4
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• pp.268-276
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• 2002

In this study, a 3D coordinate measurement system equipped with a laser displacement meter for digitizing rock joint surface was established and the digitized data were used to calculate several roughness parameters. The parameters used in this study were micro avenge inclination $angle(i_{ave})$, average slope of joint $asperity(SL_{ ave})$, root mean square of $i-angle(i_{rms})$, standard deviation of height(SDH), standard deviation of $i-angle(SD_i)$, roughness profile $index(R_P)$, and fractal dimension(D). The relationships between the roughness parameters based on the digitzation of the surface profile were analyzed. Since the measured value varied according to the degree of reflection and the variation of colors at the measuring point, rock joint surface was painted in white to minimize the influence of the surface conditions. The comparison of the measured values and roughness parameters before and after painting revealed the better consequence from measurement on the painted surfaces. Also, effect of measuring interval was studied. As measured interval was increased, roughness parameters were exponentially decreased. The incremental sequence of degree of decrease was $SDH\; i_{ave},\; i_{rms},\; SD_i,\;and\; R_ p-1$. As a result of comparison of parameters from pin-type measurement system and laser type measurement system, all value of parameters were higher when laser-type measurement system was used, except SDH.

• Journal of Advanced Marine Engineering and Technology
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• v.32 no.1
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• pp.147-152
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• 2008

This paper has been fabricated the two different type of variable attenuators using a characteristics of a 3 dB directional coupler and pin diodes. One was not analyzed using the conventional even-odd modes but used simple two-port techniques. The resulting scattering parameters described operation characteristics for the general case where the terminating impedances are equal and unequal. After analyzing resistor role of the ${\pi}$ type fixed attenuator. this paper used a pin diode instead of a resistor. The variable attenuators were fabricated using pin diodes for current-controlled attenuation on the coupled ports of a 3 dB branch-line coupler and ${\pi}$ type fixed attenuator. The realized variable attenuators have more than 33 dB attenuation ranges at 2.1 GHz. and the input and output reflection coefficients are less than -13 dB. These results could be applied to mobile communication systems. It can be varied gain of the power amplifier according to change a outdoor environmental temperature and improved linearity.