• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.30-30
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• 2011

The wave-cutoff tool is a new diagnostic method to measure electron density and electron temperature. Most of the plasma diagnostic tools have the disadvantage that their application to processing plasma where toxic and reactive gases are used gives rise to many problems such as contamination, perturbation, precision of measurement, and so on. We can minimize these problems by using the wave-cutoff method. Here, we will present the results obtained through the development of the wave-cutoff diagnostic method. The frequency spectrum characteristics of the wave-cutoff probe will be obtained experimentally and analyzed through the microwave field simulation by using the CST-MW studio simulator. The plasma parameters are measured with the wave-cutoff method in various discharge conditions and its results will be compared with the results of Langmuir probe. Another disadvantage is that other diagnostic methods spend a long time (~ a few seconds) to measure plasma parameters. In this presentation, a fast measurement method will be also introduced. The wave-cutoff probe system consists of two antennas and a network analyzer. The network analyzer provides the transmission spectrum and the reflection spectrum by frequency sweeping. The plasma parameters such as electron density and electron temperature are obtained through these spectra. The frequency sweeping time, the time resolution of the wave-cutoff method, is about 1 second. A short pulse with a broad band spectrum of a few GHz is used with an oscilloscope to acquire the spectra data in a short time. The data acquisition time can be reduced with this method. Here, the plasma parameter measurement methods, Langmuir probe, pulsed wave-cutoff method and frequency sweeping wave-cutoff method, are compared. The measurement results are well matched. The real time resolution is less than 1 ?sec. The pulsed wave-cutoff technique is found to be very useful in the transient plasmas such as pulsed plasma and tokamak edge plasma.

• Advances in aircraft and spacecraft science
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• v.3 no.3
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• pp.243-257
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• 2016

The increase of air traffic volume has brought an increasing amount of issues related to carbon and NOx emissions and noise pollution. Aircraft manufacturers are concentrating their efforts to develop technologies to increase aircraft efficiency and consequently to reduce pollutant discharge and noise emission. Ultra High By-Pass Ratio engine concepts provide reduction of fuel consumption and noise emission thanks to a decrease of the jet velocity exhausting from the engine nozzles. In order to keep same thrust, mass flow and therefore section of fan/nacelle diameter should be increased to compensate velocity reduction. Such feature will lead to close-coupled architectures for engine installation under the wing. A strong jet-wing interaction resulting in a change of turbulent mixing in the aeroacoustic field as well as noise enhancement due to reflection phenomena are therefore expected. On the other hand, pressure fluctuations on the wing as well as on the fuselage represent the forcing loads, which stress panels causing vibrations. Some of these vibrations are re-emitted in the aeroacoustic field as vibration noise, some of them are transmitted in the cockpit as interior noise. In the present work, the interaction between a jet and wing or fuselage is reproduced by a flat surface tangential to an incompressible jet at different radial distances from the nozzle axis. The change in the aerodynamic field due to the presence of the rigid plate was studied by hot wire anemometric measurements, which provided a characterization of mean and fluctuating velocity fields in the jet plume. Pressure fluctuations acting on the flat plate were studied by cavity-mounted microphones which provided point-wise measurements in stream-wise and spanwise directions. Statistical description of velocity and wall pressure fields are determined in terms of Fourier-domain quantities. Scaling laws for pressure auto-spectra and coherence functions are also presented.

• Korean Journal of Optics and Photonics
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• v.8 no.6
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• pp.445-449
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• 1997

The complex refractive indices of $Ge_2Se_2Te_5$ which show reversible phase change between the crystalline phase and an amorphous one depending upon the annealing process have been determined in the spectral range of 0.7-4.5 eV. The $Ge_2Se_2Te_5$ films were DC sputter deposited on the crystalline silicon substrate. The spectro-ellipsometry data of a thick film were analyzed following the modelling procedure where the quantum mechanical dispersion relation were used for the complex refractive indices of both the cryastalline phase $Ge_2Se_2Te_5$ and and amorphous phase $Ge_2Se_2Te_5$, respectively. On the other hand, with the surface micro-roughness layer whose effective thickness was determined from AFM analysis, the spectro-ellipsometry data were numerically inverted to yield the complex refractive index of $Ge_2Se_2Te_5$ at each wavelength. With these set of complex refractive indices, the reflectance spectra were calculated and those spectra obtained from the numerical inversion showed better agreement with the experimental reflection spectra for both the cryastalline phase and an amorphous phase. Finally, the thin $Ge_2Se_2Te_5$ film which has the optimum thickness of 26 nm as the medium for optical recording was also analyzed and the quantitative result of the film thickness and the surface microroughness has been reported.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1196-1198
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• 1995

In this paper, stability improvement of fragile LB films was attempted by monolayers at the air-water interface and crosslinking of the resulting LB films. The spreading polymers were synthesized by radical copolymerization of monoalkyl with oligoethyleneglycol methyl ether, and poly(allylamine) was employed as the subphase polymer. The monolayer properties have been studied by the surface pressure-area($\pi$-A) isotherms. Interaction between polymers and metal ions at the air-water interface and in their LB films were investigated. From the FT-IR(Reflection and Transmission) spectra, the formation of carboxylate ions and the relative orientation of the side chains could be confined. The monolayers were transferable on various substrates, and the resulting LB films were characterized by SEM and VIS-UV absorbance.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.39 no.12
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• pp.1245-1249
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• 2015

This study investigated the reflection spectra of wrinkled metal/polymer multilayers. A wavy surface was self-assembled by annealing an aluminum-coated poly(methyl metacrylate) layer on a silicon substrate. The total and diffuse reflectance characteristics of the sample with additional metal coatings(aluminum or silver) were evaluated in the visible wavelength(400~800 nm) using a spectrophotometer. The results showed that the wrinkled surface enhanced the diffuse reflectance up to 40~50% in the lower-wavelength range, demonstrating its potential for applications to optical thin-film devices.

• Macromolecular Research
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• v.15 no.1
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• pp.5-9
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• 2007

The attenuated total reflection infrared (ATR-IR) spectra of trans-polyacetylene (trans-PA) film doped with sodium (n-doping) were observed in the range of 1900 to $700cm^{-1}$. The observed IR bands were attributed to negatively charged domains created by n-doping electrons. The doping-induced IR bands showed considerable difference from its pristine film. After doping, the out-of-plane CH deformation band of the strong $1010cm^{-1}$ region in the pristine film disappeared while several new bands were observed at 1600 (due to C=C stretching), 1400 (due to in-plane CH bending), 1290 and 1174 (due to CH stretching), and $880cm^{-1}$ (due to CC stretching) regions for Na-doped PA. In particular, a weak band of C=C stretching at $1600cm^{-1}$ was newly obtained for the first time in the present study. The electro conductivity of the doped trans-PA film was $10^2S/cm$ and the origins of doping-induced IR bands are discussed in terms of solitons and polarons.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.6
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• pp.27-34
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• 2015

There has been a critical issue in optical simulation of phosphors in LEDs due to their light-reabsorption properties. To improve the accuracy of optical modeling for a white LED package, we utilized the spectrum data of the phosphor-dispersed encapsulant film instead of the phosphor powder. By measuring white LED packages with green and red phosphors, the maximum difference between simulation and experimental results of a color temperature, a color rendition index number and a color coordinate corresponds to ${\Delta}T=95K$, ${\Delta}Ra=1.7$ and ${\Delta}xy=0.007$, respectively. Based on those results, the proposed method can well explain the change of emission spectra of white LEDs with more than two phosphors which introduce the complex optical phenomena such as absorption, reabsorption, light emission, reflection and scattering, etc.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.19-20
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• 2006

Two methods that can reduce reflectance in solar cells are surface texturing and anti-reflection coating. Wet chemical etching is a typical method that surface texturing of multi-crystalline silicon. Wet chemical etching methods are the acid texturization of saw damage on the surface of multi-crystalline silicon or double-step chemical etching after KOH saw damage removal too. These methods of surface texturing are realized by chemical etching in acid solutions HF-$HNO_3$-$H_2O$. In this solutions we can reduce reflectance spectra by simple process etching of multi-crystalline silicon surface. We have obtained reflectance of 27.19% m 400~1100nm from acidic chemical etching after KOH saw damage removal. This result is about 7% less than just saw damage removal substrate. The surface morphology observed by microscope and scanning electron microscopy (SEM).

• International Journal of Industrial Entomology and Biomaterials
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• v.26 no.1
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• pp.54-60
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• 2013

The partial degumming of silk has recently attracted researchers' attention because of its ability to produce silk textiles with new tactile properties, intermediate between the softness of fully degummed silk and the hardness of raw silk. However, it is difficult to obtain partially degummed silk in a homogenously degummed state due to the heterogeneous character of sericin removal. It is also difficult to examine the homogeneity of degumming. In the present study, Fourier transform infrared (FTIR) spectroscopy with attenuated total reflection (ATR) geometry was used to evaluate the effect of processing conditions on the degumming of silk yarns. The crystallinity index, calculated from FTIR spectra, showed an increase with the degumming ratio. Therefore, the homogeneity of degumming could be evaluated by the variation of crystallinity index for 30 different spots in silk yarns. The homogeneity of degumming was influenced by the total degumming time, the content of surfactant, and the liquor rate. No effect was observed upon changing the number of degumming cycles at the same total degumming time.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.953-957
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• 2002

Single crystal 3C-SiC (cubic silicon carbide) thin-films were deposited on Si(100) wafer up to the thickness of 4.3 ${\mu}{\textrm}{m}$ by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane; ｛CH$_{3}$｝$_{6}$ Si$_{2}$) at 135$0^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC film was 4.3 ${\mu}{\textrm}{m}$/hr. The 3C-SiC epitaxial film grown on Si(100) wafer was characterized by XRD (X-ray diffraction), AFM (atomic force microscopy), RHEED (reflection high energy electron diffraction), XPS (X-ray photoelecron spectroscopy), and Raman scattering, respectively. Two distinct phonon modes of TO (transverse optical) near 796 $cm^{-1}$ / and LO (longitudinal optical) near 974$\pm$1 $cm^{-1}$ / of 3C-SiC were observed by Raman scattering measurement. The heteroepitaxially grown film was identified as the single crystal 3C-SiC phase by XRD spectra (2$\theta$=41.5。).).