• Advances in nano research
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• v.2 no.1
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• pp.69-76
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• 2014

We have obtained opal-like photonic crystals based on opals and inverted opals exhibiting a shift of the selective reflection band toward longer and shorter wavelengths with respect to the diffraction band of the initial opal consisting of $SiO_2$ spheres. The contribution of frames forming three-dimensional periodic structures and that of fillers to the spectral arrangement of the diffraction bands has been determined.

• Journal of the Optical Society of Korea
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• v.12 no.3
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• pp.147-151
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• 2008

This paper proposes a new polarization-independent Sagnac birefringence loop structure-based multiwavelength-periodic filter and presents measurements and analysis of its spectrum. The filter can be used in several schemes by adjusting the orientation angles of two quarter waveplates and the operating characteristics in the reflection type are analyzed including dispersion and polarization mode dispersion at each principal axis. This filter has polarization-independent spectra but a polarization-dependent dispersion, consequently polarization mode dispersion whose values changes with operating schemes.

• Proceedings of the PSK Conference
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• 2003.10b
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• pp.213.2-213.2
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• 2003

A simple analytical procedure using FT-NIR for the rapid determination of individual ingredients was evaluated. Direct measurements were made by reflection using a reflectance accessory, by transmittance using tablet accessory and turn table. FT-NIR spectral data were transformed to the first derivative. Partial Least Square Regression(PLSR) was applied to quantify near-infrared (NIR) spectra of 2 ingredients. These calibration models were cross-validated (leave-one-out approach). The prediction ability of the models was evaluated on ambroxol tablets and compared with the real values in manufacturing procedure. (omitted)

• Proceedings of the Korean Society of Near Infrared Spectroscopy Conference
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• 2001.06a
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• pp.1082-1082
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• 2001

Extrusion is one of the most important processes in polymer industry. The characterization of the polymer melt during processing will improve this process noticeably, One possibility of characterizing the actual processed polymer melt is the inline near infrared (NIR) spectroscopy, With this method several polymer properties can be observed during processing, e.g. composition, moisture ormechanical properties of the melt. For this purpose probes for transmission and reflection measurements have been developed, withstanding the high temperatures and pressures appearing during extrusion process (tested up to 300$^{\circ}C$ and 10 ㎫). For the transmission system an optical bypass was developed to eliminate disturbing spectral influences and hence increase the long term stability, which is the prerequisite for an industrial application. Measurements in transmission and reflection produced comparable results (or blending processes, where the prediction error was less than 1%. An optimum RMSEP of only 0.24% was found for preprocessed polymer blends measured in transmission on a laboratory extruder. A transflection measurement allowed for the first time the recording of relevant NIR-spectra in the screw area of an extruder. The application to a (PE+PP) blending process delivered promising results. This new measurement mode allows the observation of the ongoing processes within the screw area, which is of maximum Interest for reactive extrusion processes. Due to economic reasons the calibration transfer between different extrusion systems is also of high importance. Investigations on simulated and real-world spectra showed that a calibration transfer is possible. A new method alternatively to the well-known direct standardization procedures was developed, which is based on an automatic data pretreatment. This procedure delivers comparable results for the calibration transfer. Overall this paper presents concepts, components and algorithms for the inline near infrared (NIR) spectroscopy for polymer extrusion, which allows the use of it in a real industrial extrusion process.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.15 no.1
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• pp.11-20
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• 2003

In this paper we examine several methods tor calculating the reflection of irregular waves from a perforated-wall caisson breakwater using a regular wave model. The first method is to approximate the irregular waves as a regular wave whose height and period are the same as the root-mean-squared wave height and significant wave period, respectively, of the irregular waves. The second is to use the regular wave model, repeatedly, for each frequency component of the irregular wave spectrum. The wave period is determined according to the frequency of the component wave, and the root-mean-squared wave height is used for all the frequencies. The third method is the same as the second one except that the wave height corresponding to the energy of each component wave is used. Comparison with experimental data from previous authors shows the second method is the most adequate, giving reasonable agreement in both frequency-averaged reflection coefficients and reflected wave spectra.

• Transactions on Electrical and Electronic Materials
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• v.3 no.4
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• pp.21-26
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• 2002

Color correction methods of chromaticity coordinates using Color Matching Function (CMF) were studied to develop a device-independent portable-type urine analyzer. The reflection spectra were measured for the degrees of 10 test items of the urine reagent strip (urine strip) to develop a portable-type urine analyzer. A computer simulation was performed to quantitatively distinguish the color reactions of the urine system, by using the spectral power distribution of Light Emitting Diode(LED), the reflection of a urine strip, and spectral sensitivity of a photodiode. To develop a device-independent system, chromaticity coordinates were modified to reduce the color deviations in the urine strip, by using the temperature compensation of LED and the color transformation by CMF. The experimental values obtained by developed urine system exhibited the accuracy above 95% for all color samples.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.271-271
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• 2013

The defect states of a Ar-sputtered SiO2 surface on Si (001) were investigated using Auger electron spectroscopy (AES) and reflection electron energy loss spectroscopy (REELS). The REELS spectra at the primary electron energy of 500 eV showedthat three peaks at 2.5, 5.1, and 7.2 eV were found within the band gap after sputtering. These peaks do not appear at the primary electron energies of 1,000 and 1,500 eV, which means that the defect states are located at the extreme surface of a SiO2/Si thin film. According to the calculations, two peaks at 7.2 and 5.1 eV are related to neutral oxygen vacancies. However, the third peak at 2.5 eV has never been previously reported and the theories proposed that this defect state may be due to Si-Si bonding. Our Auger data showed that a peak for Si-Si bonding at 89 eV appears after Ar ion sputtering on the surface of the sample, which is consistent with the theoretical models.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.226-226
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• 2012

The electronic and electrical properties of nickel oxide (NiO) thin films were investigated by reflection electron energy loss spectroscopy (REELS), x-ray photoelectron spectroscopy (XPS), and Hall Effect measurements. REELS spectra revealed that the band gap of the NiO thin film was increased from 3.50 eV to 4.02 eV after annealing the sample at $800^{\circ}C$. Our XPS spectra showed that the amount of Ni2O3 decreased after annealing. The Hall Effect results showed that the doping type of the sample changed from n type to p type after annealing. The resistivity decreased drastically from $4.6{\times}10^3$ to $3.5{\times}10^{-2}$ ${\Omega}{\cdot}cm$. The mobility of NiO thin films was changed form $3.29{\times}10^3$ to $3.09{\times}10^5cm^2/V{\cdot}s$. Our results showed that the annealing temperature plays a crucial role in increasing the carrier concentration and the mobility which leads to lowering resistivity of NiO thin films.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.9
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• pp.96-103
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• 1994

The GaAs epilayer was grown at low temperature (LT. 250.deg. C) by molecular beam epitaxy. The properties of the LTT GaAs, before and after Rapid Thermal Annealing(RTA), were analyzed by Reflection of High Energy Electron Diffraction (RHEED), Double Crystal X-ray(DCX), Raman spectroscopy, PL and Photo-Induced Current Transient Spectroscopy (PICTS). The LT GaAs before RTA, was analyzed by RHEED and DCX, with a result of an improved surface morphology under a relatively As-rich(As/Ga ratio :28) condition, and of an increased lattics parameter of 1.1 1.7% in comparison with a GaAs substrate. However DCX and Raman spectroscopy revealed that the expanded lattics parameter and the crystallinity of LT GaAs could be recovered after RTA. On the other hand, PL spectra indicated that LT GaAs after RTA showed low optical sensitivity unlike High Temperature(HT) GaAs, and that its surface morphology and crystallinity were corresponded with those of HT GaAs. Finally PICTS spectra proved the fact that low sensitivity of LT GaAs was due to the deep level defects (Ec-0.85eV) which were strogly formed by raising RTA temperature to 750.deg. C.

• Bulletin of the Korean Chemical Society
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• v.35 no.4
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• pp.1077-1081
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• 2014

Polyacrylamide (PAM) -HgS nanocomposites were successfully prepared in polyacrylamide (PAM) matrix. From TEM and XRD characterizations, the synthesized HgS nanocrystals were chain-like spherical in shape with a diameter of about 40-60 nm and high crystalline quality. The quantum-confined effect of HgS nanocrystals was confirmed by UV-vis diffuse reflection spectra. The optical properties of products were investigated by using photoluminescence (PL) spectra, which showed that HgS nanocrystals exhibited good optical properties with maximum emission peak at about 640 and 650 nm at different reaction temperatures. The interaction of HgS nanocrystals with PAM was studied through FT-IR spectroscopy and TG analysis, which suggested that $Hg^{2+}$ could interact with functional groups of PAM. The experimental results indicated that PAM not only induced nucleation, but also inhibited further growth of HgS crystals and play an important role in the formation of PAM/HgS nanocomposites. In addition, the possible mechanism of HgS nanoparticles growth in PAM solution was also discussed.