• Title/Summary/Keyword: Reflection Spectra

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Enhanced Photocurrent from CdS Sensitized ZnO Nanorods

  • Nayak, Jhasaketan;Son, Min-Kyu;Kim, Jin-Kyoung;Kim, Soo-Kyoung;Lee, Jeong-Hoon;Kim, Hee-Je
    • Journal of Electrical Engineering and Technology
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    • v.7 no.6
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    • pp.965-970
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    • 2012
  • Structure and optical properties of cadmium sulphide-zinc oxide composite nanorods have been evaluated by suitable characterization techniques. The X-ray diffraction spectrum contains a series of peaks corresponding to reflections from various sets of lattice planes of hexagonal ZnO as well as CdS. The above observation is supported by the Micro-Raman spectroscopy result. The optical reflectance spectra of CdS-ZnO is compared with that of ZnO where we observe an enhanced absorption and hence diminished reflection from CdS-ZnO compared to that from only ZnO. A very small intensity of the visible photoluminescence peak observed at 550 nm proves that the ZnO nanorods have very low concentrations of point defects such as oxygen vacancies and zinc interstitials. The photocurrent in the visible region has been significantly enhanced due to deposition of CdS on the surface of the ZnO nanorods. CdS acts as a visible sensitizer because of its lower band gap compared to ZnO.

Characterization of 3C-SiC grown on Si(100) wafer (Si(100) 기판상에 성장된 3C-SiC의 특성)

  • 나경일;정연식;류지구;정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.533-536
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    • 2001
  • Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of 4.3 $\mu\textrm{m}$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at 1350$^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was 4.3 $\mu\textrm{m}$/hr. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively The 3C-SiC distinct phonons of TO(transverse optical) near 796 cm$\^$-1/ and LO(longitudinal optical) near 974${\pm}$1 cm$\^$-1/ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra(2$\theta$=41.5$^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern

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Growth and temperature dependence of energy band gap for $Cdln_2Te_4$ Single Crystal by Bridgman method (Bridgman법에 의한 $Cdln_2Te_4$ 단결정 성장과 에너지 밴드갭의 온도 의존성)

  • Hong, Kwang-Joon;Park, Chang-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.112-113
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    • 2006
  • A stoichiometric mixture for $Cdln_2Te_4$ single crystal was prepared from horizontal electric furnace. The $Cdln_2Te_4$ single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. The (001) growth plane of oriented $Cdln_2Te_4$ single crystal was confirmed from back-reflection Laue patterns. The carrier density and mobility of $Cdln_2Te_4$ single crystal measured with Hall effect by van der Pauw method are $8.61{\times}10^{16}\;cm^{-3}$ and $242\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $Cdln_2Te_4$ single crystal obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.4750\;eV\;-\;(7.69{\times}\;10^{-3}\;eV)T^2/(T+2147)$.

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Excited State Intramolecular Proton Transfer and Physical Properties of 7-Hydroxyquinoline

  • Kang Wee-Kyeong;Cho Sung-June;Lee Minyung;Kim Dong-Ho;Ryoo Ryong;Jung Kyung-Hoon;Jang Du-Jeon
    • Bulletin of the Korean Chemical Society
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    • v.13 no.2
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    • pp.140-145
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    • 1992
  • The excited state intramolecular proton transfer and physical properties of 7-hydroxyquinoline are studied in various solutions and heterogeneous systems by measuring steady state and time-resolved fluorescence, reflection and NMR spectra. Proton transfer is observed only in protic solvents owing to its requirement of hydrogen-bonded solvent bridge for proton relay transfer. The activation energies of the proton transfer are 2.3 and 5.4 kJ/mol in $CH_3OH$ and in $CH_3OD$, respectively. Dimers of normal molecules are stable in microcrystalline powder form and undergo an extremely fast concerted double proton transfer upon absorption of a photon, consequently forming dimers of tautomer molecules. In the supercage of zeolite NaY, its tautomeric form is stable in the ground state and does not show any proton transfer.

Polymer-waveguide Bragg-grating Devices Fabricated Using Phase-mask Lithography

  • Park, Tae-Hyun;Kim, Sung-Moon;Oh, Min-Cheol
    • Current Optics and Photonics
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    • v.3 no.5
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    • pp.401-407
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    • 2019
  • Polymeric optical waveguide devices with Bragg gratings have been investigated, for implementing tunable lasers and wavelength filters used in wavelength-division-multiplexed optical communication systems. Owing to the excellent thermo-optic effect of these polymers, wavelength tuning is possible over a wide range, which is difficult to achieve using other optical materials. In this study the phase-mask technology, which has advantages over the conventional interferometeric method, was introduced to facilitate the fabrication of Bragg gratings in polymeric optical waveguide devices. An optical setup capable of fabricating multiple Bragg gratings simultaneously on a 4-inch silicon wafer was constructed, using a 442-nm laser and phase mask. During fabrication, some of the diffracted light in the phase mask was totally reflected inside the mask, which affected the quality of the Bragg grating adversely, so experiments were conducted to solve this issue. To verify grating uniformity, two types of wavelength-filtering devices were fabricated using the phase-mask lithography, and their reflection and transmission spectra were measured. From the results, we confirmed that the phase-mask method provides good uniformity, and may be applied for mass production of polymer Bragg-grating waveguide devices.

Ground-Roll Suppression of the Land Seismic Data using the Singular Value Decomposition (SVD) (특이값 분해를 이용한 육상 탄성파자료의 그라운드롤 제거)

  • Sa, Jin-Hyeon;Kim, Sung-Soo;Kim, Ji-Soo
    • The Journal of Engineering Geology
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    • v.28 no.3
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    • pp.465-473
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    • 2018
  • The application of singular value decomposition (SVD) filtering is examined for attenuation of the ground-roll in land seismic data. Prior to the SVD computation to seek singular values containing the highly correlatable reflection energy, processing steps such as automatic gain control, elevation and refraction statics, NMO correction, and residual statics are performed to enhance the horizontal correlationships and continuities of reflections. Optimal parameters of SVD filtering are effectively chosen with diagnostic display of inverse NMO (INMO) corrected CSP (common shot point) gather. On the field data with dispersion of ground-roll overwhelmed, continuities of reflection events are much improved by SVD filtering than f-k filtering by eliminating the ground-roll with preserving the low-frequency reflections. This is well explained in the average amplitude spectra of the f-k and SVD filtered data. The reflectors including horizontal layer of the reservoir are much clearer on the stack section, with laminated events by SVD filtering and subsequent processing steps of spiking deconvolution and time-variant spectral whitening.

Development of Reflection-type Fiber-optic pH Sensor Using Sol-gel Film (졸-겔 필름을 이용한 반사형 광섬유 pH 센서의 개발)

  • Yoo, Wook-Jae;Seo, Jeong-Ki;Jang, Kyoung-Won;Moon, Jin-Soo;Han, Ki-Tek;Park, Jang-Yeon;Lee, Bong-Soo;Cho, Seung-Hyun;Heo, Ji-Yeon;Park, Byung-Gi
    • Journal of Sensor Science and Technology
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    • v.20 no.4
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    • pp.266-271
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    • 2011
  • A reflection-type fiber-optic pH sensor, which is composed of a pH sol-gel film, plastic optical fibers, a mirror, a light source and a spectrometer, is developed in this study. As pH indicators, a bromthymol blue, a cresol red and a thymol blue are used, and they are immobilized in the sol-gel films. The emitted light from a light source is guided by a fiber-optic Y-coupler and plastic optical fibers to the pH sol-gel film in a pH sensing probe. The pH change in the sensing probe gives rise to a change in the color of the pH sol-gel film, and the optical characteristic of reflected light through the pH sol-gel film is also changed. Therefore, we have measured the spectra of reflected lights, which are changed according to the color variations of the pH sol-gel films with different pH values, by using of a spectrometer. Also, the relationships between the pH values and the intensities of reflected lights are obtained on the basis of the color variations of the pH sol-gel films.

W-type hexaferrite-epoxy composites for wide-band radar absorption (광대역 레이다 흡수용 W-type 육방정 페라이트-에폭시 복합 소재)

  • Su-Mi Lee;Tae-Woo Lee;Young-Min Kang;Hyemin Kim
    • Journal of Aerospace System Engineering
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    • v.17 no.1
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    • pp.42-50
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    • 2023
  • In this study, hexagonal ferrite powder with chemical formula SrZn2-xCoxFe16O27 was synthesized by a solid-state reaction method and its electromagnetic (EM) wave absorption characteristics were evaluated in the frequency range of 0.1-18 GHz with absorber thickness range of 0 - 10 mm. Reflection loss (RL) affecting electromagnetic wave absorption performance was calculated based on the transmission line theory using measured complex permeabilities and permittivities. RL spectra were also directly measured for some samples. They were well matched with calculated results. High-frequency complex permeability characteristics were changed gradually according to the amount of Co substitution (x). The EM wave absorption frequency band could be tuned accordingly. Hexaferrite samples with x = 1.0, 1.25, and 1.5 exhibited remarkable maximum electromagnetic wave absorption performances with minimum RL (RLmin) lowered than -50 dB. They also showed a very broad frequency band (Δf > 10 GHz) in which more than 90% of the EM wave energy absorption occurred (RL ≤ -10 dB).

In Situ Monitoring of the MBE Growth of AlSb by Spectroscopic Ellipsometry

  • Kim, Jun-Yeong;Yun, Jae-Jin;Lee, Eun-Hye;Bae, Min-Hwan;Song, Jin-Dong;Kim, Yeong-Dong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.342-343
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    • 2013
  • AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.

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Study on Temperature Dependence of Molecular Structure in Stearic Acid LB Films Using FTIR-RAS (FTIR-RA 분광법을 이용한 스테아르산 단분자막에서 분자구조의 온도의존성 고찰)

  • Kim, Dong Won;Park, Sang Rae;Umemura Junjo;Takeda Satoshi;Hasegawa Takeshi;Takenaka Tohru;Lee Hai Won
    • Journal of the Korean Chemical Society
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    • v.37 no.6
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    • pp.570-576
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    • 1993
  • 1-, 3-, 9-, and 21-Monolayer Langmuir-Blodgett(LB) films of stearic acid were deposited on silver-coated glass slides at the surface pressure of 30 mN/m. Fourier transform infrared(FTIR) reflection-absorption spectra (RAS) of these LB films were recorded at various temperatures from 31 to $72^{\circ}C.$ The spectra at $31^{\circ}C$ exhibited characteristic features of highly perpendicular orientation of the hydrocarbon chain. In the 1-monolayer LB film, the C=O stretching band was not observed, presumably due to the image dipole effect on the silver surface. In the 1-and 3-monolayer LB films, the trans isomer of stearic acid was prominent, but the cis isomer was dominant in the 21-monolayer LB film. FTIR-RAS measurements at an elevated temperature indicated that the chain melting temperature increases and approached to the bulk melting point with increasing the number of monolayer, except for the 1-monolayer LB film which has a higher melting temperature than the 3-monolayer film due to the strong interaction with the silver substrate.

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