• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.143.2-143.2
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• 2016

The influence of electric field on CO adsorbed on Pt(111) was investigated with reflection-absorption infrared spectroscopy (RAIRS) in ultrahigh vacuum system. The ice film capacitor method was used to apply electric field to the amorphous ice film with CO on Pt(111). Two systems were compared by measuring the change of the CO stretching vibrational mode under applied electric field; one is CO on Pt(111), and the other is CO buried inside an ice film on Pt(111). By comparing them, we were able to calculate the additional effect of adsorption of CO on Pt(111) on peak shift. The CO adsorbed on Pt(111) has shown larger peak shift than CO adsorbed with H2O when we applied stronger electric field. Additionally, the differences were observable when the applied electric field exceeds $1{\times}10V/m^8$.

• Korean Journal of Optics and Photonics
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• v.10 no.5
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• pp.373-378
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• 1999

White light scanning interferometry is increasingly used for precision profile metrology of engineering surfaces, but its current application is primarily limited to opaque surfaces with relatively simple optical reflection behaviors. In this paper, a new attempt is made to extend the interferometric method to the thickness profile measurement of transparent thin film layers. An extensive frequency domain analysis of multiple reflection is performed to allow both the top and bottom interfaces of a thin film layer to be measured independently at the same time using nonlinear least squares technique. This rigorous approach provides not only point-by-point thickness probing but also complete volumetric film profiles digitized in three dimensions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.206-209
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• 2003

The purpose of AR and HR coating is acquire the very low reflection rate and the high reflection rate through the deposition of a thin film using the refraction ofmaterial. Basically if the high refractive material and the low refractive material are chosen and the condition for the experiment is determined, then we solve theproject with the optical design and multi thin film coating. First of all, we choose $SiO_2$for the low refractive material and $TiO_2$ for the high refractive material and apply Sputtering System easy to control the refraction rate and excellent in reconstruction to the equipment of thin film multiplication. For the control of the refraction rate and growth rate we modify RF Power and the ratio of Gas(Ar:O2), And we use Ellipsometer for estimation and analysis of the refraction rate and growth rate and AFM&SEM for the analysis of surface and component.

• Journal of Magnetics
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• v.13 no.3
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• pp.92-96
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• 2008

There are few reports of high frequency loss behavior in the near-field for magnetic films with semiconducting properties, even though semiconducting magnetic materials, such as soft magnetic amorphous alloys and nanocrystalline thin films, have been demonstrated. The electromagnetic loss behavior of multilayer magnetic films with semiconducting properties on the microstrip line in quasi-microwave frequency band was analyzed numerically using a commercial finite-element based electromagnetic solver. The large increase in the absorption performance and broadband characteristics of the semiconducting/insulating layer magnetic films examined in this study were attributed to an increase in the loss factor of resistive loss. The electromagnetic reflection increased significantly with increasing conductivity, and the loss power deteriorated significantly. The numerical results of the magnetic field distribution showed that a strong radiated signal on the microstrip line was emitted with increasing conductivity and decreasing film thickness due to re-reflection of the radiated wave from the surface of the magnetic film, even though the emitted levels varied with film thickness.

• Journal of Magnetics
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• v.10 no.4
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• pp.163-170
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• 2005

The RF integrated noise filters are fabricated by photolithography. The stack for the electromagnetic noise filters consists of the nano-granular ($Co_{41}Fe_{38}AI_{13}O_8$) soft magnetic film / $SiO_2$ / Cu transmission line / seed layer (Cu/Ti) / $SiO_2$-substrate. A good signal-attenuation feature along with a low signal-reflection feature is observed in the present filters. Especially in the noise filter incorporated with a $Co_{41}Fe_{38}AI_{13}O_8$ magnetic film with lateral dimensions of $2000{\mu}m$ wide, 15 mm long and $1{\mu}m$ thick, the maximum magnitude of signal attenuation reaches -55 dB, and the magnitude of signal reflection is below -10 dB in the overall frequency range. And this level of signal attenuation is much larger than that of a noise filter incorporated with a Fe magnetic film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.80-81
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• 2008

In this paper, we have designed the Anti-Reflection (AR) coating for 850, 1310 nm(multi type) and 1310, 1550 nm(multi type) wavelength ranges on the ferrule facet of special optical connector. The reflectance of the AR coated ferrule facet is designed under 5% for 850, 1310 nm(multi type) and 1310, 1550 nm (multi type). The average return loss of the AR coated ferrule facet is 47.1 dB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.450-451
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• 2008

In this paper, we have designed the Anti-Reflection (AR) coating for 850, 1310 nm(multi type) and 1310, 1550 nm(multi type) wavelength ranges on the ferrule facet of special optical connector. The reflectance of the AR coated ferrule facet is designed under 5% for 850, 1310 nm(multi type) and 1310, 1550 nm (multi type). AR thin film was deposited by ion- assisted deposition in low temperature. The average return loss of the AR coated ferrule facet is 47.1 dB.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.2
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• pp.354-356
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• 2017

We focused on light management technology in amorphous silicon solar cells to suppress increase in absorber thickness for improving power conversion efficiency (PCE). $MgF_2$ and $TiO_2$ anti-reflection layers were coated on both sides of Asahi VU ($glass/SnO_2:F$) substrates, which contributed to increase in PCE from 9.16% to 9.81% at absorber thickness of only 150 nm. Also, we applied very thin $MgF_2$ as a rear reflector at n-type nanocrystalline silicon oxide/Ag interface to boost photocurrent. By reinforcing rear reflection, we could find the PCE increase from 10.08% up to 10.34% based on thin absorber about 200 nm.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.40-47
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• 2014

In this paper, $Al_2O_3$ film deposited by thermal atomic layer deposition (ALD) with diluted $NH_4OH$ instead of $H_2O$ was suggested for passivation layer and anti-reflection (AR) coating of the p-type crystalline Si (c-Si) solar cell application. It was confirmed that the deposition rate and refractive index of $Al_2O_3$ film was proportional to the $NH_4OH$ concentration. $Al_2O_3$ film deposited with 5 % $NH_4OH$ has the greatest negative fixed oxide charge density ($Q_f$), which can be explained by aluminum vacancies ($V_{Al}$) or oxygen interstitials ($O_i$) under O-rich condition. $Al_2O_3$ film deposited with $NH_4OH$ 5 % condition also shows lower interface trap density ($D_{it}$) distribution than those of other conditions. At $NH_4OH$ 5 % condition, moreover, $Al_2O_3$ film shows the highest excess carrier lifetime (${\tau}_{PCD}$) and the lowest surface recombination velocity ($S_{eff}$), which are linked with its passivation properties. The proposed $Al_2O_3$ film deposited with diluted $NH_4OH$ is very promising for passivation layer and AR coating of the p-type c-Si solar cell.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.41-46
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• 2007

Surface potential properties at the interface of pentacene thin films on gold (Au) and aluminum (Al) surfaces were investigated by using a near-field scanning microwave microprobe (NSMM). The surface potential formed across the pentacene film was observed by measuring the microwave reflection coefficient $S_{11}$ and compared with the result of a Kelvin-probe method. The obtained reflection coefficient ${\Delta}S_{11}$ of the pentacene thin films on Al was decreased as the pentacene film thickness increased due to the increased accumulation of negative space charges, while for Au ${\Delta}S_{11}$ was essentially constant.