• 제목/요약/키워드: Reference temperature

검색결과 1,266건 처리시간 0.023초

온도 및 공정 보상 전류 미러를 이용한 정밀한 전류 레퍼런스 (An Accurate Current Reference using Temperature and Process Compensation Current Mirror)

  • 양병도
    • 대한전자공학회논문지SD
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    • 제46권8호
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    • pp.79-85
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    • 2009
  • 본 논문에서는 온도 및 공정 보상 전류 미러(temperature and process compensation current mirror: TPC-CM)를 이용한 정밀 전류 레퍼런스를 제안하였다. 온도 변화에 영향을 받지 않는 기준 전류는 절대 온도에 비례하여 증가하는 PTAT (proportional to absolute temperature) 전류와 온도에 반비례하여 감소하는 CTAT(complementary to absolute temperature) 전류의 합으로 생성된다. 그러나 온도 계수(temperature coefficient)와 기준 전류의 크기는 공정 변화에 크게 영향을 받는다. 이런 공정 변화를 보정하기 위하여, 제안된 TPC-CM에서는 온도 계수와 기준 전류의 크기를 조절하는 두 개의 이진 가중치 전류 미러(binary weighted current mirror)를 이용하였다. 제작된 각 칩마다 PTAT 전류와 CTAT 전류를 측정한 후, 기준 전류의 크기가 온도에 상관없이 일정하도록, TPC-CM의 스위치 코드를 결정하고 그 값을 비휘발성 메모리에 저장한다. 시뮬레이션에서 TPC-CM는 공정변화 영향을 19.7%에 서 0.52%로 줄였다. 제안된 전류 레퍼런스는 3.3V 0.35um CMOS 공정을 이용하여 제작되었으며, 측정된 칩의 기준 전류 변화율은 $20^{\circ}$C${\sim}$100$^{\circ}$C에서 0.42%였다.

적외선 검출기를 위한 액체 질소 온도 동작 밴드갭 기준회로의 설계

  • 김연규
    • 항공우주기술
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    • 제3권1호
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    • pp.251-256
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    • 2004
  • 적외선 소자로부터 생성되는 신호와의 비교에 의한 잡음 특성의 향상, 즉 좋은 영상을 얻기 위해서 적외선 영상신호 취득회로(ROIC)에서는 안정적인 기준 전압원이 필요하다. 본 논문은 극저온인 77K에서 동작하는 적외선 영상신호 취득회로(readout integrated circuit)를 위한 밴드갭 기준회로에 대해서 제안하고 있다. 기본에 발표된 대부분의 밴드갭 기준회로는 실온에서 동작하는 것이며, 액체질소 온도 77K에서 동작하는 적외선 영상 ROIC에는 적합하지 않다. 본 논문에서는 극저온에서 동작하는 밴드갭 기준회로 설계를 위하여, 온도변화에 따른 사용되는 소자들의 parameter에 대한 특성을 살펴본 후, 이러한 특성들을 고려하여 밴드갭 기준 회로를 제안하였으며 이것은 그 실용 가능성을 입증하고 있다.

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Temperature Stable Current Source Using Simple Self-Bias Circuit

  • Choi, Jin-Ho
    • Journal of information and communication convergence engineering
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    • 제7권2호
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    • pp.215-218
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    • 2009
  • In this paper, temperature stable current and voltage references using simple CMOS bias circuit are proposed. To obtain temperature stable characteristics of bias circuit a bandgap reference concept is used in a conventional circuit. The parasitic bipolar transistors or MOS transistors having different threshold voltage are required in a bandgap reference. Thereby the chip area increase or the extra CMOS process is required compared to a standard CMOS process. The proposed reference circuit can be integrated on a single chip by a standard CMOS process without the extra CMOS process. From the simulation results, the reference current variation is less than ${\pm}$0.44% over a temperature range from - $20^{\circ}C$ to $80^{\circ}C$. And the voltage variation is from - 0.02% to 0.1%.

동아시아 표준 대기가 합성 적외선 영상에 미치는 효과 (Effect of the East Asian Reference Atmosphere on a Synthetic Infrared Image)

  • 신종진
    • 한국군사과학기술학회지
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    • 제9권4호
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    • pp.97-103
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    • 2006
  • A synthetic infrared image can be effectively utilized in various fields such as the recognition and tracking of targets as long as its quality is good enough to reflect the real situations. One way to improve its quality is to use the reference atmosphere which best describes atmospheric properties of regional areas. The east asian reference atmosphere has been developed to represent atmospheric properties of the east asia including Korean peninsula. However, few research has been conducted to examine the effects of this east asian reference atmosphere on the modeling and simulation. In this regard, this paper analyzes the effects of the east asian reference atmosphere on a synthetic infrared image. The research compares the atmospheric transmittance, the surface temperature, and the radiance obtained by using the east asian reference atmosphere with those of the midlatitude reference atmosphere which has been widely applied in the east asia. The results show that the differences of the atmospheric transmittance, the surface temperature, and the radiance between the east asian reference atmosphere and the midlatitude reference atmosphere are significant especially during the daytime. Therefore, it is recommended to apply the east asian reference atmosphere for generating a synthetic infrared image with targets in the east asia.

초정밀 유정압 테이블에서 냉각장치의 변수 설정이 온도특성에 미치는 영향 (Influence of Parameter Setting in an Oil Cooler on the Temperature Characteristics of an Ultra-precision Hydrostatic Table)

  • 김경호;김창주;오정석;박천홍
    • 한국정밀공학회지
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    • 제32권6호
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    • pp.571-576
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    • 2015
  • Temperature characteristics of supply oil in an ultra-precision hydrostatic table are largely influenced by parameter setting in an oil cooler such as the location of reference sensor and cooling temperature. In this paper, influences of the parameter setting on the temperature variation in the hydrostatic table are experimentally analyzed to suggest the guidelines for practical application. In case of using temperature of inlet oil as a reference sensor in the oil cooler, temperature rise of the supply oil is smaller and thermal settling time is faster than that of using temperature of outlet oil as a reference sensor. The experimental results also show that temperatures of table, rail and return oil can be made almost same, and thermal settling time can be decreased by setting cooling temperature in the oil cooler to be lower than atmospheric temperature.

인듐틴옥사이드와 몰리브데늄을 이용한 외부 기준 저항이 필요 없는 온도센서 (Temperature sensor without reference resistor by indium tin oxide and molybdenum)

  • 전호식;배병성
    • 센서학회지
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    • 제19권6호
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    • pp.483-489
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    • 2010
  • Display quality depends on panel temperatures. To compensate it, temperature sensor was integrated on the panel. The conventional temperature sensor integrated on the panel needs external reference resistor. Since the resistance of external resistor can vary according to the variation of the environment temperature, the conventional temperature sensor can make error in temperature sensing. The environmental temperatures can change by the back light unit, driving circuits or chips. In this paper, we proposed a integrated temperature sensor on display panel which does not need external reference resister. Instead of external reference resistor, we used two materials which have different temperature coefficient in resistivity. They are connected serially and the output voltage was measured at the point of connection with the applied voltage to both ends. The proposed sensor was fabricated with indium tin oxide(ITO), and Mo metal electrode temperature sensor which were connected serially. We verified the temperature senor by the measurements of sensitivity, lineality, hysteresis, repeatability, stability, and accuracy.

A Self-Biased Current Reference in $0.25{\mu}m$ CMOS Technology

  • Park, Jae-Woo;Yoo, Chang-Sik
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2006년도 하계종합학술대회
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    • pp.635-636
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    • 2006
  • A self-biased CMOS current reference is described which provides supply and temperature independent bias current. The supply independency is obtained by subtracting two bias currents which have the same supply dependency. Unlike the conventional self-bias CMOS current reference, excellent supply independency can be obtained even with the minimum channel length devices and thus smaller area implementation becomes possible. The supply independent bias current is then applied to a temperature compensating circuit and as a result supply and temperature independent bias current is obtained. The current reference has been implemented in a $0.25{\mu}m$ standard CMOS technology. The active silicon area is only $45{\mu}m{\times}45{\mu}m$. The simulated temperature coefficient is 64ppm/$^{\circ}C$ in temperature range between $0^{\circ}C$ and $120^{\circ}C$. Supply voltage can be as low as 1.3V and the supply dependency of the current reference is measured to be smaller than 4500ppm/V. While providing $10.25{\mu}A$ output current, the current reference consumes $160{\mu}W$.

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저전력 전류모드 CMOS 기준전압 발생 회로 (A Low-Power Current-Mode CMOS Voltage Reference Circuit)

  • 권덕기;오원석
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1998년도 추계종합학술대회 논문집
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    • pp.1077-1080
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    • 1998
  • In this paper, a simple low-power current-mode CMOS wotage reference circuit is proposed. The reference circuit of enhancement-mode MOS transistors and resistors. Temperature compensation is made by adding a current component proportional to a thermal voltage to a current component proportional to a threshold voltage. The designed circuit has been simulated using a $0.65\mu\textrm{m}$ n-well CMOS process parameters. The simulation results show that the reference circuit has a temperature coefficient less than $7.8ppm/^{\circ}C$ and a power-supply(VDD) coefficient less than 0.079%/V for a temperature range from $-30^{\circ}C$ to $130^{\circ}C$ and a VDD range from 4.0V to 12V. The power consumption is 105㎼ for VDD=5V and $T=30^{\circ}C.$ The proposed reference circuit can be designed to generate a wide range of reference voltages owing to its current-mode operation.

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인공신경망모형을 이용한 기온기반 기준증발산량 산정 (Estimating Reference Crop Evapotranspiration Using Artificial Neural Network and Temperature-based Climatic Data)

  • 이성학;김마가;최진용;방재홍
    • 한국농공학회논문집
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    • 제61권1호
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    • pp.95-105
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    • 2019
  • Evapotranpiration (ET) is one of the important factor in Hydrological cycle and irrigation planning. In this study, temperature-based artificial neural network (ANN) model for daily reference crop ET estimation was developed and compared with reference crop evapotranpiration ($ET_0$) from FAO-56 Penman-Monteith method (FAO-56 PM) and parameter regionalized Hargreaves method. The ANN model was trained and tested for 10 weather stations (5 inland stations and 5 costal stations) and two input climate factors, maximum temperature ($T_{max}$), minimum temperature ($T_{min}$), and extraterrestrial radiation (RA) were used for training and validation of temperature-based ANN model. Monthly reference ET by the ANN model also compared with parameter regionalized Hargreaves method for ANN model applicability evaluation. The ANN model evapotranspiration demonstrated more accordance to FAO-56 PM evapotranspiration than the $ET_0$ from parameter regionalized Hargreaves method(R-Hargreaves). The results of this study proposed that daily reference crop ET estimated by the ANN model could be used in the condition of no sufficient climate data.

PCR에 의한 DNA 증폭에 미치는 온도와 Cycle 수 (The Effect of Temperature and Cycles on Amplification of DNA by PCR)

  • 김종호;신상희
    • 대한임상검사과학회지
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    • 제36권1호
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    • pp.33-37
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    • 2004
  • In order to study the effect of temperature of denaturation, annealing and extension and cycles on amplification of DNA by PCR method, We isolated the hepatitis B virus DNA from hepatitis B patient blood and compared the density of DNA amplified by Reference PCR Program (denaturation at $94^{\circ}C$ for 30 sec., annealing at $60^{\circ}C$ for 1 min., extension at $72^{\circ}C$ for 1 min., holding at $72^{\circ}C$ for 5min., 30 cycles) that is usually used in laboratory to the density of DNA amplified by PCR program changed only the denaturation temperature or annealing temperature or extension temperature. We amplified about 341bp of hepatitis B virus DNA by Reference PCR Program from hepatitis patient blood, but the DNAs denatured at $72^{\circ}C$ or $60^{\circ}C$ were not detectable on photoradiography film. The DNA amplified at $37^{\circ}C$ of annealing temperature was not detectable, but the DNA annealed at $72^{\circ}C$ was detectable the lower density of DNA than the DNA amplified by Reference PCR Program. Each DNA amplified by PCR program changed only the extension temperature to $37^{\circ}C$ or $60^{\circ}C$ was almost same density as DNA amplified by Reference PCR Program. We compared the density of hepatitis B virus DNA amplified by Reference PCR Program for 30 cycles, 20 cycles, 10 cycles, and 5 cycles. The DNA cycled for 20 cycles was not amplified well as cycled for 30 cycles, but the DNA was detectable on the photoradiography film. The DNAs amplified for 10 cycles or 5 cycles were not detectable on photoradiorgaphy film. The concentration of hepatitis B virus DNA amplified in Reference PCR condition for 30 cycles, 20 cycles, 10 cycles, and 5 cycles were $72{\mu}g/m{\ell}$, $83{\times}10^{-3}{\mu}g/m{\ell}$, $27{\times}10^{-6}{\mu}g/m{\ell}$, and nondetectable, respectively.

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