• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1520-1521
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• 2008

There are several ways to demonstrate white organic light emitting diodes (OLEDs) for displays and solid state lighting applications. Among these approaches are the stacked three primary or two complementary colors light-emitting layers, multiple-doped emissive layer, and excimer and exciplex emission [1-10]. We report on white phosphorescent excimer devices by using two light emitting materials based on platinum complexes. These devices showed a peak EQE of 15.7%, with an EQE of 14.5% (17 lm/W) at $500\;cd/m^2$, and a noticeable improvement in both the CIE coordinates (0.381, 0.401) and CRI (81). Devices with the structure ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 12% FPt (10 nm) /26 mCPy: 2% Pt-4 (15 nm)/BCP (40 nm)/CsF/Al [device 1], ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 2% Pt-4 (15 nm)/26 mCPy: 12% FPt (10 nm)/BCP (40 nm)/CsF/Al [device 2], and ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 2% Pt-4: 12% FPt (25 nm)/BCP (40 nm)/CsF/Al [device 3] were fabricated. In these cases, the emissive layer was either the double-layer of 26 mCPy:12% FPt and 15 nm 26 mCPy: 2% Pt-4, or the single layer of 26mCPy with simultaneous doping of Pt-4 and FPt. Device characterization indicates that the CIE coordinates/CRI of device 2 were (0.341, 0.394)/75, (0.295, 0.365)/70 at 5 V and 7 V, respectively. Significant change in EL spectra with the drive voltage was observed for device 2 indicating a shift in the carrier recombination zone, while relatively stable EL spectra was observed for device 1. This indicates a better charge trapping in Pt-4 doped layers [10]. On the other hand, device 3 having a single light-emitting layer (doped simultaneously) emitted a board spectrum combining emission from the Pt-4 monomer and FPt excimer. Moreover, excellent color stability independent of the drive voltage was observed in this case. The CIE coordinates/CRI at 4 V ($40\;cd/m^2$) and 7 V ($7100\;cd/m^2$) were (0.441, 0.421)/83 and (0.440, 0.427)/81, respectively. A balance in the EL spectra can be further obtained by lowering the doping ratio of FPt. In this regard, devices with FPt concentration of 8% (denoted as device 4) were fabricated and characterized. A shift in the CIE coordinates of device 4 from (0.441, 0.421) to (0.382, 0.401) was observed due to an increase in the emission intensity ratio of Pt-4 monomer to FPt excimer. It is worth noting that the CRI values remained above 80 for such device structure. Moreover, a noticeable stability in the EL spectra with respect to changing bias voltage was measured indicating a uniform region for exciton formation. A summary of device characteristics for all cases discussed above is shown in table 1. The forward light output in each case is approximately $500\;cd/m^2$. Other parameters listed are driving voltage (Bias), current density (J), external quantum efficiency (EQE), power efficiency (P.E.), luminous efficiency (cd/A), and CIE coordinates. To conclude, a highly efficient white phosphorescent excimer-based OLEDs made with two light-emitting platinum complexes and having a simple structure showed improved EL characteristics and color properties. The EQE of these devices at $500\;cd/m^2$ is 14.5% with a corresponding power efficiency of 17 lm/W, CIE coordinates of (0.382, 0.401), and CRI of 81.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.30 no.3 s.47
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• pp.353-359
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• 2004

The extent of silica flocculation can be modified by varying the silica concentration, aqueous phase pH, salt and polvmer concentration. High volume fraction W/O emulsion stabilized by hydrophobic silica was established with various aqueous phase conditions for cosmetic application. By increasing the silica concentration up to $1.0\;wt\%,$ the size of droplet decreased. A high silica concentration increased the viscosity of continuous oil phase by network formation, which resulted in target size of droplet. The stability of W/O emulsion is improved as increasing the aqueous phase pH. At low and intermediate pH, the emulsions became more stable by adding salt $(0.083\;mol\;dm^{-3}\;MgSO_4).$ At high PH, the presence of salt caused significant destabilization. The gelation behavior of the emulsion indicates that the effect of salt on silica-stabilized emulsion is derived from an electrostatic attraction. The addition of xanthan gum in aqueous phase increased the mono-dispersity of the W/O emulsion by making water more hydrophobic and hindering the recombination of droplets. In conclusion, these results indicate that very stable emulsifier-free, finely dispersed W/O emulsion can be achieved for cosmetic application by changing the aqueous phase composition.

• Journal of Plant Biotechnology
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• v.41 no.2
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• pp.81-88
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• 2014

Salt cress (Thellungiella halophila or Thellungiella parvula), species closely related to Arabidopsis thaliana, represents an extremophile adapted to harsh saline environments. To isolate salt-tolerance genes from this species, we constructed a cDNA library from roots and leaves of salt cress plants treated with 200 mM NaCl. This cDNA library was subsequently shuttled into the destination binary vector [driven by the cauliflower mosaic virus (CaMV) 35S promoter] designed for plant transformation and expression via recombination- assisted cloning. In total, 305,400 pools of transgenic BASTA-resistant lines were generated in Arabidopsis using either T. halophila or T. parvula cDNA libraries. These were used for functional screening of genes involved in salt tolerance. Among these pools, 168,500 pools were used for primary screening to date from which 7,157 lines showed apparent salt tolerant-phenotypes in the initial screen. A secondary screen has now identified 165 salt tolerant transgenic lines using 1,551 (10.6%) lines that emerged in the first screen. The prevalent phenotype in these lines includes accelerated seed germination often accompanied by faster root growth compared to WT Arabidopsis under salt stress condition. In addition, other lines showed non-typical development of stems and flowers compared to WT Arabidopsis. Based on the close relationship of the tolerant species to the target species we suggest this approach as an appropriate method for the large-scale identification of salt tolerance genes from salt cress.

• Journal of Life Science
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• v.16 no.3 s.76
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• pp.454-458
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• 2006

HSF1 is the heat shock transcription factor in Saccharomyces cerevisiae. S. cerevisiae KNU5377 can ferment at high temperature such as $40^{\b{o}}C$. We have been the subjects of intense study because Hsf1p mediates gene expression not only to heat shock, but to a variety of cellular and environmental stress challenges. Basing these facts, we firstly tried to construct the hsf1 gene-deleted mutant. PCR-method for fast production of gene disruption cassette was introduced in a thermotolerant yeast S. cerevisiae KNU5377, which allowed the addition of short flanking homology region as short as 45 bp suffice to mediate homologous recombination to kanMX module. Such a cassette is composed of linking genomic DNA of target gene to the selectable marker kanMX4 that confers geneticin (G418) resistance in yeast. That module is extensively used for PCR-based gene replacement of target gene in the laboratory strains. We describe here the generation of hsf1 gene disruption construction using PCR product of selectable marker with primers that provide homology to the hsf1 gene following separation of haploid strain in wild type yeast S. cerevisiae KNU5377. Yeast deletion overview containing replace cassette module, deletion mutant construction and strain confirmation in this study used Saccharomyces Genome Deletion Project (http:://www-sequence.standard.edu/group/yeast_deletion_project). This mutant by genetic manipulation of wild type yeast KNU5377 strain will provide a good system for analyzing the research of the molecular biology underlying their physiology and metabolic process under fermentation and improvement of their fermentative properties.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.321-326
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• 2013

The effect of rapid thermal annealing (RTA) on the optical properties of digital-alloy InGaAlAs multiple quantum well (MQW) structures have been investigated by using photoluminescence (PL) and time-resolved PL measurements as a function of RTA temperature. The MQW samples were annealed from $700^{\circ}C$ to $850^{\circ}C$ for 30 s in a nitrogen atmosphere. The MQW sample annealed at $750^{\circ}C$ exhibited the strongest PL intensity and the narrowest FWHM (Full width at half maximum), indicating the reduced nonradiative recombination centers and the improved interfaces between the wells and barriers. The MQW samples annealed at $800^{\circ}C$ and $850^{\circ}C$ showed the decreased PL intensities and blueshifted PL peaks compared to $750^{\circ}C$-annealed sample. The blueshift of PL peak with increasing RTA temperatures are ascribed to the increase of aluminum due to intermixing of gallium (Ga) and aluminum (Al) in the interfaces of InGaAs/InAlAs short-period superlattices. The decrease of PL intensity after annealing at $800^{\circ}C$ and $850^{\circ}C$ are attributed to the interface roughening and lateral composition modulation caused by the interdiffusion of Ga and Al and indium segregation, respectively. With increasing RTA temperature the PL decay becomes slower, indicating the decrease of nonradiative defect centers. The optical properties of digital-alloy InGaAlAs MQW structures can be improved significantly with optimum RTA conditions.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.609-614
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• 2001

This study was carried out to obtain a basic data on the production of the Nd-Fe-B system rare earth anisotropic bonded magnet by R-D & HDDR process. The reduction reaction of Nd$_2$O$_3$by metallic Ca and the diffusion reaction of Nd into Fe-B alloy powder were investigated for the production the Nd-Fe-B alloy powder. We concluded that a proper quantity of metallic Ca was about 1.3 times of theoretical equivalent from the yields of Nd and B after the R-D reaction at 100$0^{\circ}C$ for 1h. In the XRD analysis the diffusion reaction of Nd into the center of Fe-B alloy powder for the completed homogenization was required through about 45min at 110$0^{\circ}C$ for the R-D reaction, and also the maximum efficiency on the yield of Nd was obtained with such a condition. Residual Ca and oxygen contents of the final powder sample after washing were detected in 0.17wt% and 0.42wt% by ICP and oxygen analyzer, respectively.

• Journal of Periodontal and Implant Science
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• v.39 no.sup2
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• pp.279-286
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• 2009

Purpose: Gene therapy (ex vivo) has recently been used as a means of delivering bone morphogenetic proteins (BMPs) to sites of tissue regeneration. In the present study, we investigated the effect of co-transduction of adenoviruses expressing BMP-2 and BMP-7 on osteogenesisof C2C12 cells in vitro. Methods: A replication-defective human adenovirus 5 (Ad5) containing a cDNA for BMPs in the E1 region of the virus (Ad5BMP-2 and Ad5BMP-7) was constructed by in vivo homologous recombination. Functional activity of Ad5BMP-2 and Ad5BMP-7 were evaluated in mouse stromal cells (W20-17cells). C2C12 cells are transduced with various MOI (multiplicity of infection) of Ad5BMP-2 and Ad5BMP-7 to assess most effective and stable titer. Based on this result, C2C12 cells were transduced with Ad5BMP-2 and Ad5BMP-7 alone or by combination. BMPs expression, alkaline phosphatase (ALPase) activity, cell proliferation, and mineralization were assessed. Results: Ad5BMP-2 and Ad5BMP-7 are successfully transduced to W20-17 cells, and secreted BMPs stimulated cell differentiation. Also, C2C12 cells transduced with Ad5BMPs showed expression of BMPs and increased ALPaseactivity. In all groups, cell proliferation was observed over times. At 7days, cells co-transduced with Ad5BMP-2 and Ad5BMP-7 showed lower proliferation than the others. C2C12 cells co-transduced with Ad5BMP-2 and Ad5BMP-7 had greater ALPaseactivity than that would be predicted if effect of individual Ad5BMPs were additive. Little mineralized nodule formation was detected in cells transduced with individual Ad5BMPs. In contrast, Ad5BMP-2 and Ad5BMP-7 combination stimulated mineralization after culturing for 10 days in mineralizing medium. Conclusions: Present study demonstrated that adenoviruses expressing BMPs gene successfully produced BMPs protein and these BMPs stimulated cells to be differentiated into osteoblastic cells. In addition, the osteogenic activity of Ad5BMPs can be synergistically increased by co-transduction of cells with Ad5BMP-2 and Ad5BMP-7.

• The Journal of the Petrological Society of Korea
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• v.10 no.3
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• pp.202-211
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• 2001

Luminescence is a physical phenomenon exhibited by many non-conducting, crystalline materials, such as quartz and feldspar. Within the crystals, energy absorbed from ionising radiation frees electrons to move through the crystal lattice and some are trapped at defects in the lattice. Observable luminescence is produced by electrons, released from traps by stimulation by absorption of light, which recombine with lattice defects which act as luminescence centers - optically stimulated luminescence (OSL). In a similar way to thermoluminescence(TL) dating, controlled measurement of the OSL signal can provide a means of determining the time since the last exposure of a layer of sediment to sunlight, the age of the sediment. However, whereas in the thermoluminescence dating of sediment only part of the latent thermoluminescence signal is bleached by sunlight as the sediment is deposited and allowance must be made during the laboratory measurements for the light insensitive component, optically induced luminescence dating has the advantage of working only with light sensitive traps in the crystal. Determination of the time since deposition of Quaternary sediment samples from the OSL of quartz grains using blue light was performed. A series of experiments and recent developments relating OSL dating are described, beginning by identifying the features which make OSL signals suitable for the development of dating method. Additionally, there are suggestions as to future research for obtaining reliable ages and a comment on current best practice on procedures, with the dating results of Quaternary sediment.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.93-93
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• 1999

양자점(Quantum dot : QD)를 이용한 소자를 만들기 위해서는 수직방향으로의 적층이 필수적이다. 양자점의 적층은 수직적으로 같은 위치에 정렬하므로, 고려되어야 할 요소로는 양자점간의 파동함수의 중첩(coupling)에 의한 특성변화, 적층의 진행에 따른 변형(strain)의 증가로 기인되는 volcano 모양으로 나타나는 결함등이 있다. 이러한 결함은 nonradiative recombination center로 작용하여 오히려 효율이 떨어지게 되는 현상이 발생하게 되므로 본 연구에서는 적층횟수에 따른 발광효율의 변화를 조사하여 소자응용에 적절한 적층 조건을 조사하였다. 시료성장은 molecular beam epitaxy (MBE) 장치를 이용하여 GAs(100) 기판위에 GaAs buffer를 58$0^{\circ}C$에서 150nm 성장후 InAs/GaAs 양자점과 50$0^{\circ}C$에서 적층회수 1, 3, 6, 10, 15, 20회로 하였으며 적층성장 이후 GaAs cap layer를 성장하였다. GaAs spacing과 cap layer의 성장온도 역시 50$0^{\circ}C$이며 시료의 분석은 photoluminescence (PL)과 scanning transmission electron microscope (STEM)으로 하였다. 적층횟수를 바꾸어 시료를 성장하기 전에 적층횟수를 10회로 고정하고 spacing 두께를 2.8nm, 5.6nm, 11.2nm로 바꾸어 성장하여 PL 특성을 관찰하여본 결과 spacing이 2.8nm인 경우 수직적으로 정렬된 양자점 간에 coupling이 매우 커서 single layer QD의 PL peak에 비해 약 100nm 정도 파장이 증가하였고, spacing의 두께가 11.2nm 일 경우는 single layer QD와 거의 같은 파장의 빛을 방출하여 중첩이 거의 일어나지 않지만 두꺼운 spacing때문에 PL세기가 감소하였다. 한편, 적층회수에 따른 광학적 특성을 PL로 조사하여 본 결과 peak 파장은 적층횟수가 1회에서 3회로 증가했을 때는 blue shift 하다가 이후 적층이 증가함에 따라 red shift 하였다. 그리고 10층 이상의 적층에서는 excited state에서 기인된 peak이 검출되었다. 이렇나 원인은 적층수가 증가함에 따라 carrier life time이 증가하여 exciter state에 carrier가 존재할 확률이 증가하기 때문으로 생각된다. 또한 PL 세기가 다소 증가하다가 10층 이상의 경우는 다시 감소함을 알 수 있었다. 반치폭도 3층과 6층에서 가장 적은 값을 보였다. 이와 같은 결과는 결함생성과 관련하여 STEM 분석으로 해석되어질 수 있는데 6층 적층시는 양자점이 수직적으로 정렬되어 잘 형성됨을 관찰할 수 있었고 적층에 따른 크기 변화도 거의 나타나지 않았다. 그러나 10층 15층 적층시 몇가지 결함이 형성됨을 볼수 있었고 양자점의 정렬도 완전하게 이루어지지 않음을 볼 수 있었다. 그러므로 수직적층된 InAs 양자점의 광학적 특성은 성장조건에 따른 결함생성과 밀접한 관련이 있으며 상세한 논의가 이루어질 것이다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.3
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• pp.138-143
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• 2002

In this study, ZnS: Cu nano-crystals are synthesized by solution synthesis technique (SST). The structural properties such as crystal structure and particle morphology, and the optical properties such as light absorption/transmittance, energy bandgap, and photoluminescence (PL) excitation/emission are investigated. In an attempt to realize the Cu-doping easiness, the synthesis temperature (~$80^{\circ}C$) is applied to the synthesis bath, and the thiourea is used as sulfur precursor, unlike other general chemical synthesis route. Both undoped ZnS and ZnS : Cu nano-crystals have the cubic crystal structure and have the spherical particle shape. The position of light absorption edge is ~305 nm, indicating the occurrence of quantum size effect. The PL emission intensity and line-width are maximum and minimum, respectively, for Cu-doping concentration 0.03M. In particular, the dependence of PL intensity and line-width on the Cu-doping concentration for ZnS : Cu nano-crystals synthesized by SST is reported for the first time in this study. Experimental results of the absorption edge and the PL excitation show that the main emission peak of ZnS : Cu nano-crystals (~510 nm) in this study is due to the radiative recombination center in the energy bandgap induced by Cu dopant.