• 제목/요약/키워드: Readout IC

검색결과 17건 처리시간 0.026초

A Digital Readout IC with Digital Offset Canceller for Capacitive Sensors

  • Lim, Dong-Hyuk;Lee, Sang-Yoon;Choi, Woo-Seok;Park, Jun-Eun;Jeong, Deog-Kyoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제12권3호
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    • pp.278-285
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    • 2012
  • A digital readout IC for capacitive sensors is presented. Digital capacitance readout circuits suffer from static capacitance of sensors, especially single-ended sensors, and require large passive elements to cancel such DC offset signal. For this reason, to maximize a dynamic range with a small die area, the proposed circuit features digital filters having a coarse and fine compensation steps. Moreover, by employing switched-capacitor circuit for the front-end, correlated double sampling (CDS) technique can be adopted to minimize low-frequency device noise. The proposed circuit targeted 8-kHz signal bandwidth and oversampling ratio (OSR) of 64, thus a $3^{rd}$-order ${\Delta}{\Sigma}$ modulator operating at 1 MH was used for pulse-density-modulated (PDM) output. The proposed IC was designed in a 0.18-${\mu}m$ CMOS mixed-mode process, and occupied $0.86{\times}1.33mm^2$. The measurement results shows suppressed DC power under about -30 dBFS with minimized device flicker noise.

$8\times8$ UV-PPA 검출기용 Readout IC의 설계 및 제작 (Implementation of Readout IC for $8\times8$ UV-FPA Detector)

  • 김태민;신건순
    • 한국정보통신학회논문지
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    • 제10권3호
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    • pp.503-510
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    • 2006
  • Readout 회로는 검출기에서 발생되는 신호를 영상신호처리에 적합한 신호로 변환시키는 회로를 말한다. 일반적으로 감지소자와의 임피던스 매칭, 증폭기능, 잡음제거 기능, 및 셀 선택 둥의 기능을 갖추어야하며, 저 전력, 저 잡음, 선형성, 단일성(uniformity),큰 동적 범위(dynamic range), 우수한 주파수 응답 특성 등의 조건을 만족하여야 한다. Focal Plane array (FPA)용 자외선 영상 장비 개발을 위한 기술 요소는 첫째, 자외선 검출기(detector) 재료 및 미세 가공 기술 둘째, detector에서 출력되는 전기신호를 처리하기 위한 ReadOut IC (ROIC) 설계기술 그리고, detector 와 ROIC를 하이브리드 본딩하기 위한 패키지 기술 등으로 구분할 수 있다. ROIC는 영상장비 지능화 및 다기능화를 가능하게 하며, 궁극적으로 고부가가치 상품화를 위한 핵심부품이다. 특히, 고해상도 영상 장비용 ROIC의 개발을 위해서는 검출기 특성, 신호의 동적 범위, readout rate, 잡음 특성, 셀 피치(cell pitch), 전력 소모 등의 설계사양을 만족하는 고집적, 저 전력 회로설계 기술이 필요하다. 본 연구에서는 칩 제작 기간 단축 및 비용의 절감을 위하여 $8\times8$ FPA용 prototype ROIC를 설계 및 제작한다. 제작된 $8\times8$ FPA용 ROIC의 단위블럭 및 전체기능을 테스트하며, ROIC 제어보드 및 영상보드를 제작하여 UART(Universal Asynchronous Receiver Transmitter) 통신으로 PC의 모니터에서 검출된 영상을 확인함으로써, ROIC의 동작을 완전히 검증할 수 있다.

Recent Advances in Radiation-Hardened Sensor Readout Integrated Circuits

  • Um, Minseong;Ro, Duckhoon;Kang, Myounggon;Chang, Ik Joon;Lee, Hyung-Min
    • Journal of Semiconductor Engineering
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    • 제1권3호
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    • pp.81-87
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    • 2020
  • An instrumentation amplifier (IA) and an analog-to-digital converter (ADC) are essential circuit blocks for accurate and robust sensor readout systems. This paper introduces recent advances in radiation-hardening by design (RHBD) techniques applied for the sensor readout integrated circuits (IC), e.g., the three-op-amp IA and the successive-approximation register (SAR) ADC, operating against total ionizing dose (TID) and singe event effect (SEE) in harsh radiation environments. The radiation-hardened IA utilized TID monitoring and adaptive reference control to compensate for transistor parameter variations due to radiation effects. The radiation-hardened SAR ADC adopts delay-based double-feedback flip-flops to prevent soft errors which flips the data bits. Radiation-hardened IA and ADC were verified through compact model simulation, and fabricated CMOS chips were measured in radiation facilities to confirm their radiation tolerance.

M2M / IoT 디바이스의 정밀 위치와 자세 인식을 위한 6축 관성 센서 IC 설계 (Design of a 6-Axis Inertial Sensor IC for Accurate Location and Position Recognition of M2M/IoT Devices)

  • 김창현;정종문
    • 한국통신학회논문지
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    • 제39C권1호
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    • pp.82-89
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    • 2014
  • 최근 M2M/IoT에 대한 관심이 높아지면서 디바이스의 위치와 자세 등을 인식할 수 있는 동작 인식 센서의 필요성이 대두되고 있다. 본 논문에서는 소형의 디바이스에 적합하도록 저잡음, 저전력, 초소형 6축 관성센서 IC를 구현하였다. 본 논문에서 구현된 IC는 3축의 압전형 자이로 센서와 3축의 압저항형 가속도 센서를 사용하며, 3축의 자이로스코프 감지 회로, 자이로스코프 센서 구동 회로, 3축의 가속도 감지 회로, 16bit sigma-delta ADC, 디지털 필터와 제어 회로로 구성되어 있다. 본 IC은 TSMC $0.18{\mu}m$ mixed signal CMOS공정으로 개발되었으며, STM사의 6축 관성 센서인 LSM330의 소비전류 6.1mA보다는 약 27% 낮은 4.5mA의 소비 전류로 동작한다.

Design of Current-Type Readout Integrated Circuit for 160 × 120 Pixel Array Applications

  • Jung, Eun-Sik;Bae, Young-Seok;Sung, Man-Young
    • Journal of Electrical Engineering and Technology
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    • 제7권2호
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    • pp.221-224
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    • 2012
  • We propose a Readout Integrated Circuit (ROIC), which applies a fixed current bias sensing method to the input stage in order to simplify the circuit structure and the infrared sensor characteristic control. For the sample-and-hold stage to display and control a signal detected by the infrared sensor using a two-dimensional (2D) focal plane array, a differential delta sampling (DDS) circuit is proposed, which effectively removes the FPN. In addition, the output characteristic is improved to have wider bandwidth and higher gain by applying a two-stage variable gain amplifier (VGA). The output characteristic of the proposed device was 23.91 mV/$^{\circ}C$, and the linearity error rate was less than 0.22%. After checking the performance of the ROIC using HSPICE simulation, the chip was manufactured and measured using the SMIC 0.35 um standard CMOS process to confirm that the simulation results from the actual design are in good agreement with the measurement results.

A Polymer-based Capacitive Air Flow Sensor with a Readout IC and a Temperature Sensor

  • Kim, Wonhyo;Lee, Hyugman;Lee, Kook-Nyeong;Kim, Kunnyun
    • 센서학회지
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    • 제28권1호
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    • pp.1-6
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    • 2019
  • This paper presents an air flow sensor (AFS) based on a polymer thin film. This AFS primarily consists of a polymer membrane attached to a metal-patterned glass substrate and a temperature-sensing element composed of NiCr. These two components were integrated on a single glass substrate. The AFS measures changes in capacitance caused by deformation of the polymer membrane based on the air flow and simultaneously detects the temperature of the surrounding environment. A readout integrated circuit (ROIC) was also fabricated for signal processing, and an ROIC chip, 1.8 mm by 1.9 mm in size, was packaged with an AFS in the form of a system-in-package module. The total size of the AFS is 1 by 1 cm, and the diameter and thickness of the circular-shaped polymer membrane are 4 mm and $15{\mu}m$, respectively. The rate of change of the capacitance is approximately 11.2% for air flows ranging between 0 and 40 m/s.

오프셋 보정 기술을 이용한 비냉각형 적외선 센서용 신호검출 회로 설계 (Design of Readout IC for Uncooled Infrared Bolometer Sensor using Bias Offset Correction Technique)

  • 박상원;황상준;홍승우;정은식;성만영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.23-25
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    • 2005
  • Infrared bolometer sensor's variation is detected by voltage drop between reference resistor and bolometer resistor in this architecture. One of the serious problems in this architecture is that these resistors value has a process variation. So common-mode level could be different from expectation in room temperature. Different common-mode level could lead to wrong output at the end of readout circuit. We suggest useful method to solve this problem. Difference correction using capacitor has reduced CM level difference to 86% for 1 $M\Omega$. bolometer and reference resistor's 10% variation.

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비냉각 열상장비용 $64\times64$ IRFPA CMOS Readout IC (A $64\times64$ IRFPA CMOS Readout IC for Uncooled Thermal Imaging)

  • 우회구;신경욱;송성해;박재우;윤동한;이상돈;윤태준;강대석;한석룡
    • 전자공학회논문지C
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    • 제36C권5호
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    • pp.27-37
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    • 1999
  • 비냉각 열상장비의 핵심 부품으로 사용되는 InfraRed Focal Plane Array(IRFPA)용 CMOS ReadOut IC (ROIC)를 설계하였다. 설계된 ROIC는 64×64 배열의 Barium Strontium Titanate(BST) 적외선 검출기에서 검출되는 신호를 받아 이를 적절히 증폭하고 잡음제거 필터링을 거쳐 pixel 단위로 순차적으로 출력하는 기능을 수행하며, 검출기 소자와의 임피던스 매칭, 저잡음 및 저전력 소모, 검출기 소자의 pitch 등의 사양을 만족하도록 설계되었다. 검출기 소자와 전치 증폭기 사이의 임피던스 매칭을 위해 MOS 다이오드 구조를 기본으로 하는 새로운 회로를 고안하여 적용함으로써 표준 CMOS 공정으로 구현이 가능하도록 하였다. 또한, tunable 저역통과 필터를 채용하여 신호대역 이상의 고주파 잡음이 제거되도록 하였으며, 단위 셀 내부에 클램프 회로를 삽입하여 출력신호의 신호 대 잡음비가 개선되도록 하였다. 64×64 IREPA ROIC는 0.65-㎛ 2P3M (double poly, tripple metal) N-Well CMOS 공정으로 설계되었으며, 트랜지스터, 커패시터 및 저항을 포함하여 약 62,000여개의 소자로 구성되는 코어 부분의 면적은 약 6.3-{{{{ { mm}_{ } }}}}×6.7-{{{{ { mm}_{ } }}}}이다.

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A Readout IC Design for the FPN Reduction of the Bolometer in an IR Image Sensor

  • Shin, Ho-Hyun;Hwang, Sang-Joon;Jung, Eun-Sik;Yu, Seung-Woo;Sung, Man-Young
    • Transactions on Electrical and Electronic Materials
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    • 제8권5호
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    • pp.196-200
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    • 2007
  • In this paper, we propose and discuss the design using a simple method that reduces the fixed pattern noise(FPN) generated on the amorphous Si($\alpha-Si$) bolometer. This method is applicable to an IR image sensor. This method can also minimize the size of the reference resistor in the readout integrated circuit(ROIC) which processes the signal of an IR image sensor. By connecting four bolometer cells in parallel and averaging the resistances of the bolometer cells, the fixed pattern noise generated in the bolometer cell due to process variations is remarkably reduced. Moreover an $\alpha-Si$ bolometer cell, which is made by a MEMS process, has a large resistance value to guarantee an accurate resistance value. This makes the reference resistor be large. In the proposed cell structure, because the bolometer cells connected in parallel have a quarter of the original bolometer's resistance, a reference resistor, which is made by poly-Si in a CMOS process chip, is implemented to be the size of a quarter. We designed a ROIC with the proposed cell structure and implemented the circuit using a 0.35 um CMOS process.