• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.222-228
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• 2005

Undoped GaN epitaxial layer was grown on c-plane sapphire substrate by a two-step growth with metalorganic chemical vapor deposition(MOCVD). We have investigated the effects of the variation of final growth temperature on surface morphology, roughness, crystal quality, optical property, and electrical property In a horizontal MOCVD reactor, the film was grown at 300 Tow low-pressure with a fixed nucleation temperature of $500^{\circ}C$, varing the final growth temperature from $850\~1050^{\circ}C$ . The undoped GaN epilayers were characterized by atomic force microscopy, high-resolution x-ray diffractometer, photoluminescence, and Hall effect measurement.

• Journal of Korean Society of Environmental Engineers
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• v.30 no.12
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• pp.1287-1293
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• 2008

In this study, a blend of 2-amino-2-methyl-1-propanol (AMP) and ammonia (NH$_3$) was used to achieve high absorption rates for carbon dioxide (CO$_2$) as suggested at several literatures. The absorption rates of aqueous AMP and blended AMP+NH$_3$ solutions with CO$_2$ and nitrogen dioxide (NO$_2$) were measured using a stirred-cell reactor at 303 K. The effect of the added NH$_3$ to enhance absorption characteristics of AMP was studied. The performances were evaluated under various operating conditions. The absorption rates increased following the increase of the concentration of NH$_3$. The absorption rate of NH$_3$ blended into 30 wt.% AMP solution with NO$_2$ at 303 K was 12.6$\sim$32.6% higher than that of aqueous AMP solution without NH3. Also, the addition of 3 wt.% NH$_3$ to 30 wt.% AMP increased 48.2$\sim$41.6% values for the reactions with CO$_2$ and NO$_2$ at 303 K. Therefore, it clearly shows that the reaction rate of AMP with CO$_2$ and NO$_2$ can be increased by the addition of NH$_3$.