• Title/Summary/Keyword: Reactive surface

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PHOTOCATALYTIC REACTION OF $TiO_2$ FOR PURIFICATION OF AIR

  • Yin, X.J.;Cai, R.X.
    • Journal of the Korean institute of surface engineering
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    • v.32 no.3
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    • pp.336-339
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    • 1999
  • Photo-excited $TiO_2$ surface has a strong ability to induce various chemical reactions. Our study concentrates mainly on the utilisation of light energy to induce reactive radicals for environmental protection application. For instance, we have successfully used TiO$_2$ to break down foul smelling substances in air. In order to retain and separate the $TiO_2$ catalyst from the reactants and products, $TiO_2$ was immobilised by fixing onto various substrates. $TiO_2$ catalyst coated onto glass, wall paper and painted panel was found to show significant deodorising effect. The deodorising effect continues as long as$TiO_2$ is exposed to light irradiation.

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Deposition Characteristic of InNx Films by Reactive DC Magnetron Sputtering (반응성 직류 스퍼터법에 의한 질화 인듐 박막의 제막 특성)

  • 송풍근;류봉기;김광호
    • Journal of the Korean Ceramic Society
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    • v.40 no.8
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    • pp.739-745
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    • 2003
  • In $N_{x}$ films were deposited on soda-lime glass without substrate heating by reactive dc magnetron sputtering using indium (In) metal target. Depositions were carried out under various total gas pressures ( $P_{tot}$) of mixture gases (Ar+$N_2$ or He+$N_2$). He gas was introduced to $N_2$ gas in order to enhance the reactivity of nitrogen on film surface by the "penning ionization". Plasma impedance decreased greatly when 20% or more introduced the $N_2$ gas. This is due to the In $N_{x}$ layers formed on target surface because a secondary electron emission rate of InN is small compared with In metal. XRD patterns of the films revealed that <001> preferred oriented polycrystalline In $N_{x}$ films, where the crystallinity of the films was improved with decrease of $P_{tot}$ and with increase of $N_2$ flow ratio. The improvement of the crystallinity and stoichimetry of the In $N_{x}$ films were considered to be caused by an increase in the activated nitrogen radicals and also by an increase in the kinetic energy of sputtered In atoms arriving at growing film surface, which should enhance the chemical reaction and surface migration on the growing film surface, respectively. Furthermore, the films deposited using mixture gases of He+$N_2$ showed higher crystallinity compared with the film deposited by the mixture gases of Ar+$N_2$.$.EX>.

Effects of the Brazing Bonding between Al2O3 and STS304 with an Ion Beams (이온빔을 이용한 STS304와 알루미나 브레이징 접합효과)

  • Park, Il-Soo
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.16 no.12
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    • pp.8679-8683
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    • 2015
  • Using a surface modification technique, ion beam assisted deposition (IBAD) of Ti thin film it becomes possible to prepare an active ceramic surface to braze $Al_2O_3$-STS304 with conventional Ag-Cu eutectic composition filler metal. Researches on bonding formations at interfaces of ceramic joints were mainly related on the development of filler metals to ceramic, the process parameters, and clarifications of reaction products. From the results, the reactive brazing is a very convenient technique compared to the conventional Mn-Mo method. However melting point of reactive filler is still higher than that of Ag-Cu eutectic and it forms the brittle inter metallic compound. Recently several new approaches are introduced to overcome the main shortcomings of the reactive metal brazing in ceramic-metal, metal vapor vacuum arc ion source was introduced to implant the reactive element directly into the ceramics surface, and sputter deposition with sputter etching for the deposition of active material.

Characteristics of tungsten nitride films deposited by reactive sputtering method (Reactive sputtering 방법으로 증착된 W nitride 박막의 특성)

  • 이연승;이원준;나사균;이윤직;임관용;황정남
    • Journal of the Korean Vacuum Society
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    • v.11 no.1
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    • pp.22-27
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    • 2002
  • We investigated the crystal structure, resistivity, and chemical states change of the tungsten nitride $(WN_x)$ films prepared by reactive sputtering method with various $N_2$ flow ratios. Crystal structures of $WN_x$ films deposited at the $N_2$ flow ratios of 20%, 40%, and 60% were bcc $\beta$-W, amorphous, and fcc $W_2$N, respectively. Surface roughness of $WN_x$ film was smallest when the $WN_x$ film is amorphous. After the air exposure of $WN_x$ films, $WO_3$ layer was formed at the surface of all samples. Both the nitrogen content of $WN_x$ film and the binding energy of W $4f_{7/2}$ peaks increased with increasing $N_2$ flow ratio. However, after $Ar^+$ ion etching, the shift of W $4f_{7/2}$ peaks was not observed with $N_2$ flow ratio due to the amorphization of the $WN_x$ film surface. The resistivity of $WN_x$ films increased with increasing $N_2$ flow ratio.

A Study on the Annealed Properties of ITO Thin Film Deposited by RF-superimposed DC Reactive Magnetron Sputtering (RF/DC 동시인가 마그네트론 스퍼터링 방법으로 증착된 ITO 박막의 열처리 특성 연구)

  • Moon, Jin-Wook;Kim, Dong-Won
    • Journal of the Korean institute of surface engineering
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    • v.40 no.3
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    • pp.117-124
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    • 2007
  • The ITO films were deposited on glass substrates by RF-superimposed dc reactive magnetron sputtering and were annealed in $N_2$ vacuum furnace with temperatures in the range of $403K{\sim}573K$ for 30 minutes. Electrical, optical and structural properties of ITO films were examined with varying annealing temperatures from 403 K to 573 K. The resistivity of as-deposited ITO films was $5.4{\times}10^{-4}{\Omega}cm$ at the sputter conditions of applied RF/DC power of 200/200 W, $O_{2}$ flow of 0.2 seem and Ar flow of 0.2 seem. As a result of annealing in the temperature range of $403K{\sim}573K$, the crystallization occurred at 423 K that is lower than the crystallization temperature caused by a conventional sputtering method. And the resistivity decreased from $5.4{\times}10^{-4}{\Omega}cm\;to\;2.3{\times}10^{-4}{\Omega}cm$, the carrier concentration and mobility of ITO films increased from $4.9{\times}10^{20}/cm^3\;to\;6.4{\times}10^{20}/cm^3$, from $20.4cm^2/Vsec\;to\;41.0cm^2/Vsec$, respectively. The transmittance of ITO films in visible became higher than 90% when annealed in the temperature range of $423K{\sim}573K$. High quality ITO thin films made by RF-superimposed dc reactive magnetron sputtering and annealing in $N_2$ vacuum furnace will be applied to transparent conductive oxides of the advanced flat panel display.

A Study on Dyeing Properties of Cafionicagent Treated Cotton Fibre with Reactive Dye (캐티온화제 처리한 면섬유에 대한 반응성 염료의 염색성)

  • Jung, Young Jin;Lee, Young Hee;Kim, Kyung Hwan
    • Textile Coloration and Finishing
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    • v.6 no.4
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    • pp.46-53
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    • 1994
  • Polymer cationic agent was prepared by the initial polymerisation of epichlorohydrin followed by amination with diethylamine. Cotton fibre treated with the polymer (6~8% o.w.f.) is highly cationic and exhibit increased substantivity for reactive dyes under neutral to weakly acid conditions. The modified substrate could be dyed with reactive dyes without salt or a little salt from dye bath. The increased concentration of cationic agents resulted in an increase the colour yield. Futhermore, treated cotton has an electropositive surface charge. Adsorption of Reactive dye can be attributed to both van der waals force and electrostatic attraction.

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Design of Wideband Microwave Absorbers Using Reactive Salisbury Screens with Maximum Flat Reflection

  • Kim, Gunyoung;Kim, Sanghoek;Lee, Bomson
    • Journal of electromagnetic engineering and science
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    • v.19 no.2
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    • pp.71-81
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    • 2019
  • This paper presents a design methodology for wideband single-layered microwave absorbers with arbitrary absorption at the design center frequency using reactive Salisbury screens. The bandwidth of the absorber increases when the flatness of the reflection response at the design center frequency is maximized. Based on this observation, closed-form design formulas for wideband absorbers are derived. As they are scalable to any design frequency, wideband reactive screens can be systematically realized using two-dimensional periodic crossed-dipole structures patterned on a resistive sheet. Based on this method, a single-layered absorber with a 90% bandwidth improved to 124% of the design center frequency is presented. For the purpose of physical demonstration, an absorber with a design center frequency of 10 GHz is designed and fabricated using a silver nanowire resistive film with a surface resistance of 30 Ω/square. The measured absorption shows a good agreement with both the calculation and the electromagnetic simulation.

Dynamics of Gas-phase Hydrogen Atom Reaction with Chemisorbed Hydrogen Atoms on a Silicon Surface

  • 임선희;이종백;김유항
    • Bulletin of the Korean Chemical Society
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    • v.20 no.10
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    • pp.1136-1144
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    • 1999
  • The collision-induced reaction of gas-phase atomic hydrogen with hydrogen atoms chemisorbed on a silicon (001)-(2×1) surface is studied by use of the classical trajectory approach. The model is based on reaction zone atoms interacting with a finite number of primary system silicon atoms, which then are coupled to the heat bath, i.e., the bulk solid phase. The potential energy of the Hads‥Hgas interaction is the primary driver of the reaction, and in all reactive collisions, there is an efficient flow of energy from this interaction to the Hads-Si bond. All reactive events occur on a subpicosecond scale, following the Eley-Rideal mechanism. These events occur in a localized region around the adatom site on the surface. The reaction probability shows the maximum near 700K as the gas temperature increases, but it is nearly independent of the surface temperature up to 700 K. Over the surface temperature range of 0-700 K and gas temperature range of 300 to 2500 K, the reaction probability lies at about 0.1. The reaction energy available for the product states is small, and most of this energy is carried away by the desorbing H2 in its translational and vibrational motions. The Langevin equation is used to consider energy exchange between the reaction zone and the bulk solid phase.

Effect of Poly(vinyl alcohol) and Poly(vinyl alcohol) Mono Thiol on the Stability Properties of Poly(vinyl acetate) Latex (폴리비닐알코올과 폴리비닐알코올모노티올이 폴리초산비닐 라텍스의 안정성에 미치는 영향)

  • 이서용;박이순
    • Polymer(Korea)
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    • v.24 no.5
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    • pp.579-588
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    • 2000
  • The effects of protective colloids on the colloid stability of poly(vinyl acetate) (PVAc) latex was investigated. The stability of PVAc latex in reactive poly(vinyl alcohol) mono thiol (PVALT) (DP=1080) having 78.4% saponification value was better than poly (vinyl alcohol)(PVA) (DP=1100) having 81.6% saponification value. The colloidal stability of PVAc latex particles improved drastically with increase of the reactive PVALT. The particle surface morphology of PVAc latex was examined by transmission electron microscopy (TEM). It was shown that particle size of 1ha latexes decreased with increasing reactive PVALT concentration. Therefore, the stabilities of latex for reactive PVALT protective colloid was superior to that of PVA ones. This result is due to the introduction of many thiol groups that induce chemical bonds at PVAc latexes surface, so that the formation of PVALT-b-PVAc block copolymer via the reaction of PVAc with reactive PVALT. In addition, zeta potential of the PVAc latexes decreased with increasing sodium carbonate concentration.

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