• Bulletin of the Korean Chemical Society
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• v.31 no.2
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• pp.335-338
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• 2010

In this study, the atmospheric plasma treatment with $He/O_2$ was conducted to modify the surface chemistry of carbon fibers. The effects of plasma treatment parameters on the surface energetics of carbon fibers were experimentally investigated with respect to gas flow ratio, power intensity, and treatment time. Surface characteristics of the carbon fibers were determined by X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), Fourier transform infrared (FT-IR), Zeta-potential, and contact angle measurements. The results indicated that oxygen plasma treatment led to a large amount of reactive functional groups onto the fiber surface, and these groups can form together as physical intermolecular bonding to improve the surface wettability with a hydrophilic polymer matrix.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2005.11b
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• pp.300-315
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• 2005

Recently plasma surface-cleaning or surface-etching techniques have been focused in the respect of decontamination of spent or used nuclear parts and equipment. In this study decontamination rate of metallic cobalt surface was experimentally investigated via its surface etching rate with a $CF_4-O_2$ mixed gas plasma and metallic surface wastes of cobalt oxides were simulated and decontaminated with $NF_3$ - Ar mixed gas plasma. Experimental results revealed that a mixed etchant gas with about $80{\%}\;CF_4-20{\%}\;O_2$ gives the highest reaction rate of cobalt disk and the rate reaches with a negative 300 DC bias voltage up to $0.43\;{\mu}m$/min at $380^{\circ}C$ and $20{\%}\;NF_3-80\%$ Ar mixed gas gives $0.2\;{\mu}m$/min of reaction rate of cobalt oxide film.

• Journal of the Korean institute of surface engineering
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• v.40 no.4
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• pp.159-164
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• 2007

Transparent aluminum oxide films were deposited on polycarbonate (PC) substrates by inductively coupled plasma (ICP) assisted reactive sputtering. the oxygen flow rate was regulated by controlling the target voltage with a proportional integrate derivative controller. The PC substrate was treated with plasma prior to the deposition in order to the enhance the adhesive strength of the $Al_2O_3$ film. The characteristics of hardness, structure, density, transmittance, deposition rate, surface roughness and residual stress were investigated to estimate the possibility for the hard coating.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.225-232
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• 2011

Reactive ion etching (RIE) technique for maskless surface texturing of mc-silicon solar wafers has been applied and succeed in fabricating a grass-like black-silicon with an average reflectance of $4{\pm}1%$ in a wavelength range of 300~1,200 nm. In order to investigate the optimized texturing conditions for mass production of high quantum efficiency solar cell Surface characteristics such as the spatial distribution of average reflectance, micrscopic surface morphology and minority carrier lifetime were monitored for samples from saw-damaged $15.6{\times}15.6\;cm^2$ bare wafer to key-processed wafers as well as the mc-Si solar cells. We observed that RIE textured wafers reveal lower average reflectance along from center to edges by 1% and referred the origin to the non-uniform surface structures with a depth of 2 times deeper and half-maximum width of 3 times. Samples with anti-reflection coating after forming emitter layer also revealed longer minority carrier lifetime by 40% for the edge compared to wafer center due to size effects. As results, mc-Si solar cells with RIE-textured surface also revealed higher efficiency by 2% and better external quantum efficiency by 15% for edge positions with higher height.

• Journal of the Korean Vacuum Society
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• v.13 no.3
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• pp.120-126
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• 2004

A damage-reduced trench was investigated in view of the defect distribution along trench sidewall and bottom using high resolution transmission electron microscopy, which was formed by HBr plasma and additive gases in magnetically enhanced reactive ion etching system. Adding $O_2$ and other additive gases into HBr plasma makes it possible to eliminate sidewall undercut and lower surface roughness by forming the passivation layer of lateral etching. To reduce the RIE induced damage and obtain the fine shape trench corner rounding, we investigated the hydrogen annealing effect after trench formation. Silicon atomic migration on trench surfaces using high temperature hydrogen annealing was observed with atomic scale view. Migrated atoms on crystal surfaces formed specific crystal planes such as (111), (113) low index planes, instead of fully rounded comers to reduce the overall surface energy. We could observe the buildup of migrated atoms against the oxide mask, which originated from the surface migration of silicon atoms. Using this hydrogen annealing, more uniform thermal oxide could be grown on trench surfaces, suitable for the improvement of oxide breakdown.

• ETRI Journal
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• v.16 no.1
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• pp.45-57
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• 1994

The effects of reactive ion etching (RIE) of $SiO_2$ layer in $CHF_3/C_2F_6$ on the underlying Si surface have been studied by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometer, Rutherford backscattering spectroscopy, and high resolution transmission electron microscopy. We found that two distinguishable modified layers are formed by RIE : (i) a uniform residue surface layer of 4 nm thickness composed entirely of carbon, fluorine, oxygen, and hydrogen with 9 different kinds of chemical bonds and (ii) a contaminated silicon layer of about 50 nm thickness with carbon and fluorine atoms without any observable crystalline defects. To search the removal condition of the silicon surface residue, we monitored the changes of surface compositions for the etched silicon after various post treatments as rapid thermal anneal, $O_2$, $NF_3$, $SF_6$, and $Cl_2$ plasma treatments. XPS analysis revealed that $NF_3$ treatment is most effective. With 10 seconds exposure to $NF_3$ plasma, the fluorocarbon residue film decomposes. The remained fluorine completely disappears after the following wet cleaning.

• Journal of the Korean Society of Combustion
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• v.5 no.1
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• pp.1-6
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• 2000

Surface reaction occurs at a certain surface temperature when a catalyst is heated up in a reactive mixture. If homogeneous ignition does not occur, a steady state is observed because the heat produced by the surface reaction is balanced with the heat loss caused by convection, conduction and radiation. The present paper treats the effects of pressure on the surface temperature at the steady state. Hydrogen and oxygen are used as reactants and nitrogen as an inert gas. A spherical platinum catalyst of 1.5 mm in diameter is sustained in the chamber with two wires of 0.1 mm in diameter. As results, there exists a maximum steady temperature at a certain relative hydrogen concentration which increases with total pressure. At the steady state, it can be approximated that the heat release is estimated by the mass transfer considering the effect of natural convection. The experimental results are explained qualitatively by the approximation.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.286-288
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• 2014

This study deals with the catalyst free radio frequency plasma assisted polymerization of ethylene glycol using nitrogen as reactive gas to modify the surface chemistry and morphology. The deposited film was characterized through various analysis techniques i.e. surface profilometry, Forier transform infrared spectroscopy, water contact angle and UV-visible spectroscopy to analyze film thickness, chemical structure, surface energy and optical properties respectively. The surface topography was analyzed by Atomic force microscopy. It was observed that the ethylene oxide behaviour and optical transmittance of the film were reduced with the introduction of nitrogen gas due to higher fragmentation of monomer. However the hydrophilic behavior of the film improved due to formation of new water loving functional groups suitable for biomedical applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.360-360
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• 2010

Very initial stage of oxidation process of Si (001) surface was investigated using large scale molecular dynamics simulation. Reactive force field potential was used for the simulation owing to its ability to handle charge variation associated with the oxidation reaction. To know the detail mechanism of both adsorption and desorption of water molecule (for simulating wet oxidation), oxygen molecule (for dry oxidation) and their atom constituents, interaction of one molecule with Si surface was carefully observed. The simulation is then continued with many water and oxygen molecules to understand the kinetics of oxide growth. The results show that possibilities of desorption and adsorption depend strongly on initial atomic configuration as well as temperature. We observed a tendency that H atoms come relatively into deeper surface or otherwise quickly desorbed away from the silicon surface. On the other hand, most oxygen atoms are bonded with first layer of silicon surface. We also noticed that charge transfer is only occur in nearest neighbor regime which has been pointed out by DFT calculation. Atomic structure of the interface between the oxide and Si substrate was characterized in atomic scale.

• Journal of the Korean institute of surface engineering
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• v.31 no.6
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• pp.317-324
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• 1998

TiN and TiCN films were deposited on the high speed steel by Cathode Arc Ion Plating(CAIP) Process to investigate the tool life extension effect. The experiment variables were bias voltage and deposit time for the TiN coating and reactive gas flow rate ($CH_4:N_2$) under fixing deposit pressure, are current, bias voltage for the TiCN coating respectively. The micro structure and mechanical properties were investigated and compared for among the coating conditions using various methods and machining practice.