• 한국전기전자재료학회논문지
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• 제11권7호
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• pp.527-534
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• 1998

Thin film deposition of InN, which is a less-studied III-nitride compound semiconductor because of the difficulty if crystal growth, was performed by rf reactive sputtering method using In target and $N_2$reactive gas. The structrual, electrical, and optical properties of the produced films were measured and disussed according to the sputtering parameters such as deposition pressure, rf power, and substrate temperature. From the result of deposition pressure, rf power, and substrate temperature, we could obtain optimal conditions of 5m Torr, 60W, $60^{\circ}C$ for preparing InN thin film with high crystallinity, low carrier concentration, and high Hall mobility. The carrier concentration, Hall mobility, and optical bandgap of the fabricated InN thin films at optimal condition were $6.242\times10^{18}cm^{-3}, 212.526cm^2/V\cdot$ｓ, and 1.912eV, respectively.

• 한국산업융합학회 논문집
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• 제25권2_2호
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• pp.199-208
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• 2022

The steel wire or steel bar processing process applied to the manufacture of various bolts and power transmission shafts was improved by applying in-line phosphate film treatment technology. By applying a polymer lubricant for a non-reactive metal forming process and a non-reactive non-phosphorus lubricating coating agent, the film formation for each process time was comparatively analyzed and reviewed. Compared to the nine processes applied previously, the in-line phosphate film treatment technology applied with only two processes has been effectively improved in terms of reduction of treatment time, reduction of facility installation area, prevention of water pollution due to wastewater, and non-use of ozone-depleting substances. In addition, it was found that it can have an important effect on productivity improvement and price competitiveness from the simplification of quality control and process control as well as improvement of the working environment.

• Membrane and Water Treatment
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• 제14권2호
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• pp.95-106
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• 2023

In the developing country like India, groundwater is the main sources for household, irrigation and industrial use. Its contamination poses hydro-geological and environmental concern. The hazardous waste sites such as landfills can lead to contamination of ground water. The contaminants existing at such sites can eventually find ingress down through the soil and into the groundwater in case of leakage. It is necessary to understand the process of migration of pollutants through sub-surface porous medium for avoiding health risks. On this backdrop, the present paper investigates the behavior of pollutants' migration through porous media. The laboratory experiments were carried out on a soil-column model that represents porous media. Two different types of soils (standard sand and red soil) were considered as the media. Further, two different solutes, i.e., non-reactive and reactive, were used. The experimental results are simulated through numerical modeling. The percentage variation in the experimental and numerical results is found to be in the range of 0.75- 11.23 % and 0.84 - 1.26% in case of standard sand and red soil, respectively. While a close agreement is observed in most of the breakthrough curves obtained experimentally and numerically, good agreement is seen in either result in one case.

• Journal of the korean society of oceanography
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• 제35권1호
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• pp.16-33
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• 2000

In order to measure the vertical fluxes of particles and reactive radionuclides such as thorium and polonium isotopes, Dunbar-type sediment traps were freely deployed at the Ulleung Basin and in warm and cold water masses around the polar front of the East Sea. We estimated the ratios of the catched (F) to the predicted $^234$Th fluxes (P) using natural tracers pair $^234$Th-$^238$U. The F/P ratios are decreased with increasing water depth. Whereas the concentrations of suspended particles are homogeneous in water column, the mass fluxes are also decreased with increasing water depth like the F/P ratios. These facts indicate that organic matters of settling particles are destructed within the euphotic layer due to decomposition. Whereas regenerations of sinking particles are negligible in the cold water mass, about 80% of them are regenerated in the warm water mass during falling of large particles. These downward mass fluxes are closely correlated with their primary productions in euphotic zone. The activities of $^234$Th, $^228$Th and $^210$Po in the sinking material were increased with water depth. Because $^234$Th steadily produced in the water column are cumulatively adsorbed on the surface of sinking particles, vertical $^234$Th fluxes were observed to increase with water depth. Therefore, these sinking particles play important roles in transporting the particle reactive elements like thorium from surface to the deep sea. The scavenging processes including adsorption and settling reactions generate radio-disequilibrium between daughter and parent nuclides in water column. The activity ratios of $^234$Th/$^238$U and $^228$Th/$^228$Ra were observed to be < 1.0 in the surface water and approached to be equilibrium below the thermocline. The extent of the deficiency of daughter nuclides compared to the parents nuclide was highly correlated with the vertical particle flux. Because most of the $^210$Po in the surface water are scavenged on a labile phase and are recycled at sub-surface depths (< 200 m), the $^210$Po are always observed to be excess activities compared to $^226$Ra in surface water.

• 한국재료학회지
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• 제1권2호
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• pp.93-98
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• 1991

The as-grown $YBa_2Cu_3O_{7-x}$ superconducting thin films on MgO(100) substrate have been prepared by a reactive coevaporation method. The superconducting transition temperature, surface morphology and crystalline quality were examined as a function of the substrate temperature ranging from $450^{\circ}C$ to $590^{\circ}C$. From the reflection high energy electron diffraction (RHEED) analysis, it was found the film consisted of almost amorphous phase with a halo pattern deposited at the substrate temperature of $450^{\circ}C$. The film deposited at the substrate temperature of $510^{\circ}C$ consisted of polycrystalline phase, showing a broad ring pattern. On the other hand, for the film deposited at $590^{\circ}C$, RHEED showed spotty pattern indicating that this film consisted of single crystal phase. It has rough film surface due to the surface outgrowth. The surface outgrowth increased as the substrate temperature increased from $510^{\circ}C$ to $590^{\circ}C$. the surface outgrowth may be due to the anisotropic growth rate. The highest transition temperature obtained in this study was $Tc_{zero}$ of 83K with $Tc_{onset}$ of 88K for the film deposited at $590^{\circ}C$ using activated RF oxygen plasma.

• Transactions on Electrical and Electronic Materials
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• 제1권1호
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• pp.6-11
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• 2000

The hydrogen plasma treatment of silicon wafers in the reactive ion-etching mode was studied for the application to silicon-on-insulator wafers which were prepared using the wafer bonding technique. The chemical reactions of hydrogen plasma with surface were used for both surface activation and removal of surface contaminants. As a result of exposure of silicon wafers to the plasma, an active oxide layer was found on the surface. This layer was rendered hydrophilic. The surface roughness and morphology were examined as functions of the plasma exposing time and power. In addition, the surface became smoother with the shorter plasma exposing time and power. The value of initial surface energy estimated by the crack propagation method was 506 mJ/㎡, which was up to about three times higher as compared to the case of conventional direct using the wet RCA cleaning method.

• 한국가구학회지
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• 제25권2호
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• pp.87-95
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• 2014

Since 1990s the concern on essence and inside has transferred onto the surface and its style. The longing for plastic surgery and skin beauty might prove this fervent tendency. Furthermore the development of digital media and technology as well as high-tech material enabled this hope to be real in the realm of design. All these progresses and transitions toward the surface introduced more creative and novel phenomena of furniture design arena around its surface. The rising of surface has evolved through architecture, interior design and furniture. The surface of furniture can be easily transposed into the human skin. And it acquires the aspects of skin's metaphoric and symbolic meaning. The characteristics of skin effect in furniture design can be summarized as material aspects, relational aspects, and formal aspects. Material aspects shows skin's elasticity and smooth plane. Relational aspects express the reactive functions of skin. Formal aspects represent organic power through surface.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.268-268
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• 2013

Water molecules on a Ru(0001) surface are anomalously acidic compared to bulk water. The observation was made by conducting reactive ion scattering, reflection absorption infrared spectroscopy, and temperature-programmed desorption measurements for the adsorption of ammonia onto a water layer formed on Ru(0001). The study shows that the water molecules in the first intact $H_2O$ bilayer spontaneously release a proton to NH3 adsorbates to produce $NH_4{^+}$. However, such proton transfer does not occur for $H_2O$, OH, and H in a mixed adsorption layer or for $H_2O$ in a thick ice film surface.

• Bulletin of the Korean Chemical Society
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• 제30권8호
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• pp.1805-1810
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• 2009

The adsorptions of trimethygallium (TMG) and arsine (As$H_3$) on H/Si(100)-2x1 surface were theoretically investigated. In the case of TMG adsorption, methane loss reaction, surface methylation, hydrogen loss reaction and ring closing reaction channels were found. The mechanism of As$H_3$ adsorption on the surface was also identified. Among these, the methane loss reaction depositing –Ga(C$H_3)_2$ was found to be the major channel due to its low barrier height and the large exothermicity. The surface methylation reaction is the second most favorable channel. In contrast, arsine turned out to be less reactive on the surface, implying that Arsine surface reaction would be the rate limiting step in the overall ALD process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 춘계학술대회 논문집
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• pp.38-41
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• 1994

The method of passivation for protecting the $Hg_{1-x}Cd_{x}$Te surface is important device fabrication process. Because the surface components are highly reactive leading to its chemical and electrical instability. Especially. the material of detecting for infrared radiation, of which composition is x=0.2 or 0.3, is narrow bandgap semi- conductor. The narrow bandgap semi conductors are largely governed by the properties of the semiconductor surface. The narrow bandgap semi-conductors are largely governed by the properties of the semiconductor surface. The electro-chemical processing of $Hg_{1-x}Cd_{x}$Te allows rigorous control of the surface chemistry and provides an in-suit monitor of surface reaction. So electro-chemical reduction at specific potential can be selectively eliminated the undesirable species on the surface and mainpulated to reproducibly attain the desired stoichiometry. This method shows to assess the quality of chemically treated good $Hg_{1-x}Cd_{x}$Te surface.