• 한국재료학회지
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• 제10권4호
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• pp.295-300
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• 2000

반응성 이온 식각과 산화막을 이용한 첨예화 공정을 통하여 균일한 실리콘 팁 어레이를 제작한 후, 그 위에 Pd을 증착하여, Pd 코팅이 전계 방출특성에 미치는 영향에 대해 조사하였다. 어레이에 존재하는 표면 산화막을 제거한 후의 전계 방출 특성의 향상은 매우 작았으나, $100{\AA}$의 Pd을 코팅한 후에는 30V의 구동전압이 감소하는 등 전계 방출특성이 크게 향상되었다. 이는 Pd 코팅에 의해 팁의 표면 거칠기가 증가하고, 전자가 방출되는 팁 끝부분의 반경이 감소하였기 때문이다. 한편 Pd을 코팅한 에미터는 높은 방출 전류 영역에서 우수한 동작 안전성을 보였다. 이를 통하여 Pd이 코팅된 실리콘 에미터가 고온에서의 동작과 표면안정성에서 우수한 특성을 보임을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.358-358
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• 2010

Ion beam bombardment at low energy forms nanosize patterns such as ripples, dots or wrinkles on the surface of polymers in ambient temperature and pressure. It has been known that the ion beam can alter the polymer surface that induces skins stiffer or the density higher by higher compressive stress or strain energies associated with chain scissions and crosslinks of the polymer. Atomic scale structure evolution in polymers is essential to understand a stress generation mechanism during the ion beam bombardment, which governs the nanoscale surface structure evolution. In this work, Molecular Dynamics (MD) simulations are employed to characterize the phenomenon occurred in bombardment between the ion beam and polymers that forms nanosize patterns. We investigate the structure evolution of Low Density Polyethylene (LDPE) at 300 K as the polymer is bombarded with Argon ions having various kinetic energies ranging from 100 eV to 1 KeV with 50 eV intervals having the fluence of $1.45\;{\times}\;1014 #/cm2$. These simulations use the Reactive Force Field (ReaxFF), which can mimic chemical covalent bonds and includes van der Waals potentials for describing the intermolecular interactions. The results show the details of the structural evolution of LDPE by the low energy Ar ion bombardment. Analyses through kinetic and potential energy, number of crosslinks and chain scissions, level of local densification and motions of atoms support that the residual strain energies on the surface is strongly associated with the number of crosslinks or scissored chains. Also, we could find an optimal Ar ion beam energy to make crosslinks well.

• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.328-331
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• 2012

With the recent development of super-precision optical instruments, camera modules for devices, such as portable terminals and digital camera lenses, are increasingly being used. Since an optical lens is usually produced by high-temperature compression molding methods using tungsten carbide (WC) alloy molding cores, it is necessary to develop and study technology for super-precision processing of molding cores and coatings for the core surface. In this study, Rhenium-Iridium (Re-Ir) thin films were deposited onto a WC molding core using a sputtering system. The Re-Ir thin films were prepared by a multi-target sputtering technique, using iridium, rhenium, and chromium as the sources. Argon and nitrogen were introduced through an inlet into the chamber to be the plasma and reactive gases. The Re-Ir thin films were prepared with targets having a composition ratio of 30 : 70, and the Re-Ir thin films were formed with a 240 nm thickness. Re-Ir thin films on WC molding core were analyzed by scanning electron microscope (SEM), atomic force microscope (AFM), and Ra (the arithmetical average surface roughness). Also, adhesion strength and coefficient friction of Re-Ir thin films were examined. The Re-Ir coating technique has received intensive attention in the coating processes field because of promising features, such as hardness, high elasticity, abrasion resistance and mechanical stability that result from the process. Re-Ir coating technique has also been applied widely in industrial and biomedical applications. In this study, WC molding core was manufactured, using high-performance precision machining and the effects of the Re-Ir coating on the surface roughness.

• The Korean Journal of Physiology and Pharmacology
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• 제3권2호
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• pp.165-174
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• 1999

We explore the question of whether adenosine 5'-triphosphate (ATP) acts as an excitatory neurotransmitter in guinea-pig gastric smooth muscle. In an organ bath system, isometric force of the circular smooth muscle of guinea-pig gastric antrum was measured in the presence of atropine and guanethidine. Under electrical field stimulation (EFS) at high frequencies (＞20 Hz), NO-mediated relaxation during EFS was followed by a strong contraction after the cessation of EFS (a 'rebound-contraction'). Exogenous ATP mimicked the rebound-contraction. A known $P_{2Y}-purinoceptor$ antagonist, reactive blue 2 (RB-2), blocked the rebound-contraction while selective desensitization of $P_{2Y}-purinoceptor$ with ${\alpha},{\beta}-MeATP$ did not affect it. ATP and 2-MeSATP induced smooth muscle contraction, which was effectively blocked by RB-2 and suramin, a nonselective $P_2-purinoceptor$ antagonist. Particularly, in the presence of RB-2, exogenous ATP and 2-MeSATP inhibited spontaneous phasic contractions, suggesting the existence of different populations of purinoceptors. Both the rebound-contraction and the agonist-induced contraction were not inhibited by indomethacin. The rank orders of agonists' potency were 2-MeSATP > ATP ${ge}$ UTP for contraction and ${\alpha},{\beta}-MeATP\;{\ge}\;{\beta},{\gamma}-MeATP$ for inhibition of the phasic contraction, that accord with the commonly accepted rank order of the classical $P_{2Y}-purinoceptor$ subtypes. Electrical activities of smooth muscles were only slightly influenced by ATP and 2-MeSATP, whereas ${\alpha},{\beta}-MeATP$ attenuated slow waves with membrane hyperpolarization. From the above results, it is suggested that ATP acts as an excitatory neurotransmitter, which mediates the rebound-contraction via $P_{2Y}-purinoceptor$ in guinea-pig gastric antrum.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.434-435
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• 2012

Plasma enhanced chemical vapor deposition (PECVD) silicon dioxide thin films have many applications in semiconductor manufacturing such as inter-level dielectric and gate dielectric metal oxide semiconductor field effect transistors (MOSFETs). Fundamental chemical reaction for the formation of SiO2 includes SiH4 and O2, but mixture of SiH4 and N2O is preferable because of lower hydrogen concentration in the deposited film [1]. It is also known that binding energy of N-N is higher than that of N-O, so the particle generation by molecular reaction can be reduced by reducing reactive nitrogen during the deposition process. However, nitrous oxide (N2O) gives rise to nitric oxide (NO) on reaction with oxygen atoms, which in turn reacts with ozone. NO became a greenhouse gas which is naturally occurred regulating of stratospheric ozone. In fact, it takes global warming effect about 300 times higher than carbon dioxide (CO2). Industries regard that N2O is inevitable for their device fabrication; however, it is worthwhile to develop a marginable nitrous oxide free process for university lab classes considering educational and environmental purpose. In this paper, we developed environmental friendly and material cost efficient SiO2 deposition process by substituting N2O with O2 targeting university hands-on laboratory course. Experiment was performed by two level statistical design of experiment (DOE) with three process parameters including RF power, susceptor temperature, and oxygen gas flow. Responses of interests to optimize the process were deposition rate, film uniformity, surface roughness, and electrical dielectric property. We observed some power like particle formation on wafer in some experiment, and we postulate that the thermal and electrical energy to dissociate gas molecule was relatively lower than other runs. However, we were able to find a marginable process region with less than 3% uniformity requirement in our process optimization goal. Surface roughness measured by atomic force microscopy (AFM) presented some evidence of the agglomeration of silane related particles, and the result was still satisfactory for the purpose of this research. This newly developed SiO2 deposition process is currently under verification with repeated experimental run on 4 inches wafer, and it will be adopted to Semiconductor Material and Process course offered in the Department of Electronic Engineering at Myongji University from spring semester in 2012.