• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.4
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• pp.664-669
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• 2018

To observe the relationship between the oxygen vacancy and electrical characteristics of $TiO_2$ due to the $CO_2$ gases, the $TiO_2$ were deposited by the mixing gases of $Ar:O_2=20$ sccm:20 sccm and annealed with various temperatures. The bonding structure was changed with the annealing temperature from amorphous to crystal structure, and the oxygen vacancy was also changed with these bonding structures. The $CO_2$ gas reaction of $TiO_2$ films showed the variation in accordance with the bonding structure. The capacitance increased at the amorphous structure $TiO_2$, and the current also increased. However the oxygen vacancy decreased at this amorphous structure $TiO_2$. Because of the formation of oxygen vacancies is in inverse proportion to the amorphous structure. Moreover, the diffusion current in the depletion layer such as the amorphous structure showed the difference in accordance with the $CO_2$ gas flow rates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.545-549
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• 2001

We have produced electrolyte solution out of 1.15M LiPF$\sub$6/ EC/EMC/DEC/PC(30/55/10/5 by vol%) as a reference, and at the same time, performed basic physical property test using a single solvent of 1.15M LiPF$\sub$6/DEC, DMC, EMC and a 2 component electrolyte solution of 1.15M LiPF$\sub$6/ EC/DEC(1/2 by vo%%) and PC/DEC(1/2 by vol%). Cyclic Voltammetry Analysis showed that, compared to existing carbonate organic solvent, the addition of DEC, DMC and EMC brought the de-decomposition peak of salt anion of PF$\sub$6/$\^$-/ and the solvent at lower oxidization potential of 2.3V, 0.7V and 2.1V(vs. Li/Li$\^$+/\`). In addition, a kinetics current peak, in which intercalation of Li$\^$+/ is proceeded at 750mv, 450mv(vs. Li/Li$\^$+/), was confirmed. These findings suggest that the DEC solvent decomposition occurred at an electric potential lower than that of oxidization of existing carbonate organic solvent. Through the impedance analysis, we checked electric charge transfer resistance(R$\sub$ct/) according to the electric potential of Li$\^$+/ intercalation at 750mv(vs. Li/Li$\^$+/), which was the same as the resistance (R$\sub$f/) and cyclic voltammetry of SEI film that was formed at Reference. By doing so, we found that the significant decrease of polarization resistance(R$\sub$p/) when Reference was played a part in the formation of compact SEI layer at the initial decomposition reaction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.525-529
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• 2017

Molybdenum oxide ($MoO_3$) offers pivotal advantages for high optical transparency and low light reflection. Considering device fabrication, n-type $MoO_3$ semiconductor can spontaneously establish a junction with p-type Si. Since the energy bandgap of Si is 1.12 eV, a maximum photon wavelength of around 1,100 nm is required to initiate effective photoelectric reaction. However, the utilization of infrared photons is very limited for Si photonics. Hence, to enhance the Si photoelectric devices, we applied the wide energy bandgap $MoO_3$ (3.7 eV) top-layer onto Si. Using a large-scale production method, a wafer-scale $MoO_3$ device was fabricated with a highly crystalline structure. The $MoO_3/p-Si$ heterojunction device provides distinct photoresponses for long wavelength photons at 900 nm and 1,100 nm with extremely fast response times: rise time of 65.69 ms and fall time of 71.82 ms. We demonstrate the high-performing $MoO_3/p-Si$ infrared photodetector and provide a design scheme for the extension of Si for the utilization of long-wavelength light.

• Journal of Sensor Science and Technology
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• v.24 no.6
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• pp.364-367
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• 2015

Tin oxide thin films were fabricated on glass substrates by the successive ionic layer adsorption and reaction (SILAR) method at room temperature and ambient pressure. Before measuring their properties, all samples were annealed at $500^{\circ}C$ for 2 h in air. Film thickness increased with the number of cycles; X-ray diffraction patterns for the annealed $SnO_2$ thin films indicated a $SnO_2$ single phase. Thickness of the $SnO_2$ films increased from 12 to 50 nm as the number of cycles increased from 20 to 60. Although the optical transmittance decreased with thickness, 50 nm $SnO_2$ thin films exhibited a high value of more than 85%. Regarding electronic properties, sheet resistance of the films decreased as thickness increased; however, the measured resistivity of the thin film was nearly constant with thickness ($3{\times}10^{-4}ohm/cm$). From Hall measurements, the 50 nm thickness $SnO_2$ thin film had the highest mobility of the samples ($8.6cm^2/(V{\cdot}s)$). In conclusion, optical and electronic properties of $SnO_2$ thin films could be controlled by adjusting the number of SILAR cycles.

• Journal of Pharmaceutical Investigation
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• v.34 no.6
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• pp.513-519
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• 2004

A sensitive method for quantification of pinaverium bromide in human plasma was established using liquid chromatography-electrospray ionization tandem mass spectrometry(LC-ESI-MS/MS). Glimepiride was used as internal standard. Pinaverium bromide and internal standard in plasma sample were extracted using tert-butylmethylether(TBME). A centrifuged upper layer was then evaporated and reconstituted with mobile phase of acetonitrile-5 mM ammonium formate (80/20, pH 3.0). The reconstituted samples were injected into a $C_{18}$ reversed-phase column. Using MS/MS with multiple reaction monitoring (MRM) mode, pinaverium and glimepirde were detected without severe interference from human plasma matrix. Pinaverium produced a protonated precursor ion $([M+H]^+)$ at m/z 510.3 and a corresponding product ion at m/z 228.9. Internal standard produced a protonated precursor ion $([M+H]^+)$ at m/z 491.5 and a corresponding product ion at m/z 352.0. Detection of pinaverium bromide in human plasma was accurate and precise, with limit of quantitation at 0.5 ng/ml. The method has been successfully applied to bioavailability study of pinaverium bromide tablet in Korean healthy male volunteers. Pharmacokinetic parameters such as $AUC_t,\;C_{max},\;T_{max},\;K_{el}\;and\;t_{1/2}$ were calculated.

• Applied Microscopy
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• v.15 no.2
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• pp.98-110
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• 1985

This study was performed to clarify the morphological structures of the epithelia of the renal papilla, renal pelvis and ureter of the sheep (Ovis aries L.) through the light and scanning electron microscopes, Tissue specimens were taken from the renal papilla (common renal papilla and peripelvic column) and the renal pelvis (pelvis proper and pelvic pouch) of the kidney and the ureter. For the light microscopy, tissue blocks were fixed in 10 % neutral buffered formalin and embedded in paraffin wax, serially sectioned at a thickness of $6{\mu}m$. These sections were stained with hematoxylin-eosin and periodic acid-Schiff reaction. For the scanning electron microscopy, tissue blocks were prefixed in 1% glutaral-dehyde-1.5% paraformaldehyde solution and postfixed in 1% osmium tetroxide solution, dehydrated in graded alcohol, transferred to isoamyl acetate, and then dried by the critical point dryer (Polaron E 3000). These dried tissues were coated with gold and observed with a scanning electron microscope (JSM-35C), The results were as follows: The apex of the common renal papilla was lined with simple columnar epithelium having many microvilli on its luminal surface. Lateral portion of the papilla was lined with stratified epithelium $2{\sim}3$ layers thick, and its superficial cells were microvillar cells having many microvilli. The epithelium lining the peripelvic column was $1{\sim}2$ layers thick. The superficial layer was made of the microvillar cells, but a few microplica cells were appeared in the region near the pelvic pouch. The epithelium of the pelvic pouch was $1{\sim}2$ layered transitional type, and its superficial cells were microplica cells. The epithelia of the pelvis proper and ureter were $4{\sim}6$ layered transitional type, and their superficial cells were typical facet cells existing many round depressions and ridges of cell membranes of the luminal side.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.141-149
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• 1998

The W thin films were deposited on Si3N4 by a PECVD technique. The effects of substrate temperature and gas flow ratio on the properties of the W films were investigated. The deposition of W films were limited by surface reaction at the temperature range of 150>~$250^{\circ}C$, W films had the deposition rate of 150~530 $\AA$/min and stress of 0.85~$14.35\times10 ^9 \textrm {dynes/cm}^2}$ at various substrate temperatures and $SiH_4/WF_6$ flow ratios. $SiH_4/WF_6$ flow ratio affected the deposition rate and stress of the W films, expecially, excessive flow of SiH4 abruptly changed the structure, chemical bonding, and stress of the W films. Among the deposited W films on TiN, Ti, Mo, NiCr and Al adhesion layer, the one on the Al had the best adhesion property.

• Korean Journal of Materials Research
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• v.3 no.3
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• pp.310-315
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• 1993

The effects of RT A treatment on the breakdown strengths were studied for tantalum pentoxide(${Ta_2}{O_5}$) films prepared by thermal oxidation of dc-sputtered Ta(400$\AA$) on p-type (100) Si wafer. While the relative dielectric constants of the RT A -treated specimens were not remarkably affected, the breakdown strengths of the RTA-treated specimens were greatly changed by RTA temperature and time. After the RTA treatment, the breakdown strengths of the specimens RTA-treated at the temperature below the crystallization temperature were increased to 5.4MV /cm, while those of the specimens RTA -treated at the temperature above it were decreased to 0.5MV /cm. RTA time-independence of the flat-bant voltage shift refleted that the RT A post-annealing effects on the breakdown strengths were not due to the interface reaction between the ${Ta_2}{O_5}$ layer and the Si substrate but, through the RBS analysis, to densification of the ${Ta_2}{O_5}$ films.

• Journal of the Korean Society for Heat Treatment
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• v.8 no.1
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• pp.32-43
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• 1995

Ti-6Al-4V alloy are widely used in chemical and aircraft industries for their good corrosion resistance and high strength to weight ratio. Surface alloying of Ti alloy by $CO_2$ laser is able to produce few hundred micrometers thick TiN surface-alloyed layer with high hardness on the substrate very simplely by injecting reaction gas($N_2$) into a laser-generated melt pool and adjust the hardness to the specific requirements of the individual application by changing of laser processing parameters. This research has been investigated the effect of such parameters on TiN surface-alloying of Ti-6Al-4V alloy by $CO_2$ laser. The maximum hardness of TiN surface-alloyed zone waw obtained by injecting 100% $N_2$ gas and it was decreased as the amount of $N_2$ gas in Ar and $N_2$ gas mixture was decreased. As scanning speed was increased, the hardness and depth of TiN surface-alloyed zone was decreased at constant laser power. The surface hardness after double scanning laser treatment is higher than that of single scanning. At constant laser power, the surface roughness is increased after the surface alloying if laser scanning speed is decreased.

• Korean Journal of Food Science and Technology
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• v.28 no.1
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• pp.146-151
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• 1996

For the purpose of production of oligosaccharides from alginates, a bacterium was isolated from seaweed, and then an enzyme which degraded alginates was obtained from the bacterium. A specific activity of the enzyme was shown in G-rich block and Na-alginate (Wako Co.) as a result of reaction between the enzyme and six types of alginates (G-rich block, M-rich block and 4 commercial Na-alginate). Degradation products were prepared from the Na-alginate (Wako Co.) by the enzyme. The oligosaccharides were fractioned by Sephadex G-25 and Bio-gel P-2 and identified on a thin layer chromatography (TLC). Degree of polymerization (DP) of the oligosaccharides was shown from 2.6 to 7.5.