• Journal of the Korean Ceramic Society
• /
• v.36 no.6
• /
• pp.655-661
• /
• 1999

${\beta}$-SiC formation mechanism in Si melt-C-SiC system with varying in size of carbon source was investigated. A continuous reaction sintering process using Si melt infiltration method was adopted to control the reaction sintering time effectively. It was found that ${\beta}$-SiC formation mechanism in Si melt-C-SiC system was directly affected by the size of carbon source. In the Si melt-C-SiC system with large carbon source ${\beta}$-SiC formation mechanism could be divided into two stages depending on the reaction sintering time: in early stage of reaction sintering carbon dissolution in Si melt and precipitation of ${\beta}$-SiC was occurred preferentially and then SIC nucleation and growth was controlled by diffusion of carbon throughy the ${\beta}$-SiC layer formed on graphite particle. Furthmore a dissolution rate of graphite particles in Si melt could be accelerated by the infiltration of Si melt through basal plane of graphite crystalline.

• Proceedings of the KSME Conference
• /
• 2001.11a
• /
• pp.27-31
• /
• 2001

Hi-Nicalon SiC fiber reinforced SiC composites (SiC/SiC) have been fabricated by the reaction sintering process. Braided Hi-Nicalon SiC fiber with double interphases of BN and SiC was used in this composite system. The microstructures and the mechanical properties of reaction sintered SiC/SiC composites were investigated through means of electron microscopies (SEM, TEM, EDS) and bending tests. The matrix morphology of reaction sintered SiC/SiC composites was composed of the SiC phases that the composition of the silicon and the carbon is different. The TEM analysis showed that the residual silicon and the unreacted carbon were finely distributed in the matrix region of reaction sintered SiC/SiC composites. Reaction sintered SiC/SiC composites also represented proper flexural strength and fracture energy, accompanying the noncatastrophic failure behavior.

• Journal of the Korean Ceramic Society
• /
• v.32 no.9
• /
• pp.1027-1032
• /
• 1995

SiC had been widely applied for mechanical sealing as a sealing material. SiC sintering is commonly made of reaction sintering, presureless sintering, and hot isostatic pressing (HIP) sintering. In this investigation, however, clay bonded sintering was used to avoide any complications of the special sintering methods as mentioned above. In order to prevent harmful SiC oxidation in the clay bonded sintering, clay and frit were used to form the SiC oxidation protecting layer and graphite was added to provide high solid lubricity. As a result, the material with 6% clay (clay 5.4% and frit 0.6%) and 2~4% graphite (45 mesh) sintered at 140$0^{\circ}C$ for 3 hours, showed the following physical properties; porosity 6%, static friction coefficient 0.15, kinematic coefficient 0.1,. and specific wear rate 4.8$\times$10-8 $\textrm{mm}^2$kgf-1. On the other hand, the flexural strength was 900kgf/$\textrm{cm}^2$. This tribological characteristic properties were similar to those of the reaction sintered SiC except the flexural strength.

• Journal of the Korean Ceramic Society
• /
• v.45 no.4
• /
• pp.204-207
• /
• 2008

This paper presents a new process for producing SiC fiber-SiC matrix(SiC/SiC) composites by reaction sintering. The processing strategy for the fabrication of the SiC/SiC composites involves the following: (1) infiltration of the SiC fiber fabric using a slurry consisting of Si and C precursors, (2) stacking the slurry-infiltrated SiC fiber fabric at room temperature, (3) cross-linking the stacked composites, (4) pyrolysis of the stacked composites, and (5) hot-pressing of the pyrolyzed composites. It was possible to obtain dense SiC/SiC composites with relative densities of >96% and a typical flexural strength of ${\sim}400$ MPa.

• Journal of the Korean Ceramic Society
• /
• v.25 no.6
• /
• pp.609-614
• /
• 1988

This study was carried out to investigate the effects of B4C or Y2O3 additives on the tendency of sintering, $\beta$-SiC synthesis and mineral phase changes by reaction bonding of SiC at 145$0^{\circ}C$. At the sintering temperature of 145$0^{\circ}C$, the additives such as B4C or Y2O3 did not improved porosity and bending strength. Added more than 1.5% of Y2O3, 0.5-0.3% of B4C, the formation of $\beta$-SiC was increased. At higher temperature above 145$0^{\circ}C$, it seems that the bodies added B4C, contained 3C form of SiC were denser than that of Y2O3 added. Because the transition of 3Clongrightarrow4Hlongrightarrow6H promoted sintering.

• Journal of the Korean Ceramic Society
• /
• v.36 no.11
• /
• pp.1261-1265
• /
• 1999

Effect of SiC particle size of the densification of Al2O3-SiC composite during pressureless sintering was investigated. Two types of SiC powders having average particle size of 0.15${\mu}{\textrm}{m}$ and 3${\mu}{\textrm}{m}$ were used. Densification rate of the specimen containing 0.15${\mu}{\textrm}{m}$ SiC particles was slower than that of the specimen containg 3${\mu}{\textrm}{m}$ SiC particles. Although the relative density of the specimen containing 0.15${\mu}{\textrm}{m}$ SiC particles was below 90% of theoretical density after sintering at 155$0^{\circ}C$ the complete closure of open pores occurred. Therefore full densification could be obtained by subsequent HIP. On the other hand in the specimen containing 3${\mu}{\textrm}{m}$ SiC particles the complete closed pore was observed at 95% of theoretical density. Such a fast pore closure in the specimen containing 0.15${\mu}{\textrm}{m}$ SiC particles is likely to occur as a result of dense reaction layer formation on the specimen surface which is attributed to the high reactivity of small size particles with sintering atmosphere.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.20 no.3
• /
• pp.29-34
• /
• 2019

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its large energy band gap and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, electric conductivity of porous n-type SiC semiconductors fabricated from ${\beta}-SiC$ powder at $2000^{\circ}C$ in $N_2$ atmosphere was comparable to or even larger than the reported values of SiC single crystals in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$, while thermal conductivity was kept as low as 1/10 to 1/30 of that for a dense SiC ceramics. In this work, for the purpose of decreasing sintering temperature, it was attempted to fabricate porous reaction-sintered bodies at low temperatures ($1400-1600^{\circ}C$) by thermal decomposition of polycarbosilane (PCS) impregnated in n-type ${\beta}-SiC$ powder. The repetition of the impregnation and sintering process ($N_2$ atmosphere, $1600^{\circ}C$, 3h) resulted in only a slight increase in the relative density but in a great improvement in the Seebeck coefficient and electrical conductivity. However the power factor which reflects the thermoelectric conversion efficiency of the present work is 1 to 2 orders of magnitude lower than that of the porous SiC semiconductors fabricated by conventional sintering at high temperature, it can be stated that thermoelectric properties of SiC semiconductors fabricated by the present reaction-sintering process could be further improved by precise control of microstructure and carrier density.

• Journal of the Korean Ceramic Society
• /
• v.51 no.5
• /
• pp.392-398
• /
• 2014

$Al_2O_3$-SiC composites reinforced with SiC whisker ($SiC_w$) were fabricated using three different methods. In the first, $Al_2O_3-SiC_w$ starting materials were used. In the second, $Al_2O_3-SiC_w$-SiC particles ($SiC_p$) were used, which was intended to enhance the mechanical properties by $SiC_p$ reinforcement. In the third method, reaction-sintering was used with mullite-Al-C-$SiC_w$ starting materials. After hot-pressing at $1750^{\circ}C$ and 30 MPa for 1 h, the composites fabricated using $Al_2O_3-SiC_w$ and $Al_2O_3-SiC_w-SiC_p$ showed strong mechanical properties, by which the effects of reinforcement by $SiC_w$ and $SiC_p$ were confirmed. On the other hand, the mechanical properties of the composite fabricated by reaction-sintering were found to be inferior to those of the other $Al_2O_3$-SiC composites owing to its relatively lower density and the presence of ${\gamma}-Al_2O_3$ and ${\gamma}-Al_{2.67}O_4$. The greatest hardness and $K_{1C}$ were 20.37 GPa for the composite fabricated using $Al_2O_3-SiC_w$, and $4.9MPa{\cdot}m^{1/2}$ using $Al_2O_3-SiC_w-SiC_p$, respectively, which were much improved over those from the monolithic $Al_2O_3$.

• Journal of the Korean Ceramic Society
• /
• v.31 no.5
• /
• pp.561-571
• /
• 1994

For the preparation of SiC composite, the properties of reaction sintering in the SiC-C-Si-Ti system with the titanium contents variation were investigated. Either the case of titanium additions or the case of direct infiltration of titanium in SiC+C preform, the newly formed fine-grained $\beta$-SiC, which was reacted from the molten silicon with graphite, was intergranulated between the original $\alpha$-SiC particles. Also titanium disilicide (TiSi2) was discontinuously formed isolated pocket in silicon matrix. The amount of titanium disilicide was gradually increased as titanium content increase. With the results of hardness and fracture toughness measurement, SiC-titanium disilicide (TiSi2) composite represented high properties compared with the system of the infiltrated pure silicon.

• Journal of the Korean Ceramic Society
• /
• v.33 no.12
• /
• pp.1414-1420
• /
• 1996

Using Si powder with average particle size of 8${\mu}{\textrm}{m}$ Si compacts were formed by pressureless powder packing method. The compacts were reaction bonded at 1350, 140$0^{\circ}C$ for 3~35 hrs under N2/H2 atmosphere and its microstructures were examined. Reaction bonded silicon nitrides showed nitridation of 90% and relative density of 88% After the impregnation of 5wt% MgO as sintering additive using aqueous solution of Mg nitrate the Si compacts were reaction bonded at 140$0^{\circ}C$ for 15hrs. The reaction bonded bodies were gas pressure sintered at 180$0^{\circ}C$ 190$0^{\circ}C$ 200$0^{\circ}C$ for 150, 300min. They showed relative density of 95% bending strength of 600MPa and fracture toughness of 6 MPa.m1/2.